JP2020063186A5 - - Google Patents

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Publication number
JP2020063186A5
JP2020063186A5 JP2019161167A JP2019161167A JP2020063186A5 JP 2020063186 A5 JP2020063186 A5 JP 2020063186A5 JP 2019161167 A JP2019161167 A JP 2019161167A JP 2019161167 A JP2019161167 A JP 2019161167A JP 2020063186 A5 JP2020063186 A5 JP 2020063186A5
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Japan
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sic
sic substrate
epitaxial wafer
strip
band
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JP2019161167A
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Japanese (ja)
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JP2020063186A (ja
JP7184719B2 (ja
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Publication of JP2020063186A5 publication Critical patent/JP2020063186A5/ja
Priority to JP2022186625A priority patent/JP7396442B2/ja
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JP2019161167A 2019-09-04 2019-09-04 ＳｉＣエピタキシャルウェハ Active JP7184719B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019161167A JP7184719B2 (ja) 2019-09-04 2019-09-04 ＳｉＣエピタキシャルウェハ
JP2022186625A JP7396442B2 (ja) 2019-09-04 2022-11-22 ＳｉＣ基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019161167A JP7184719B2 (ja) 2019-09-04 2019-09-04 ＳｉＣエピタキシャルウェハ

Related Parent Applications (1)

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JP2018194020A Division JP6585799B1 (ja) 2018-10-15 2018-10-15 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法

Related Child Applications (1)

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JP2022186625A Division JP7396442B2 (ja) 2019-09-04 2022-11-22 ＳｉＣ基板

Publications (3)

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JP2020063186A JP2020063186A (ja) 2020-04-23
JP2020063186A5 true JP2020063186A5 (enExample) 2021-11-18
JP7184719B2 JP7184719B2 (ja) 2022-12-06

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JP2019161167A Active JP7184719B2 (ja) 2019-09-04 2019-09-04 ＳｉＣエピタキシャルウェハ
JP2022186625A Active JP7396442B2 (ja) 2019-09-04 2022-11-22 ＳｉＣ基板

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JP2022186625A Active JP7396442B2 (ja) 2019-09-04 2022-11-22 ＳｉＣ基板

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JP (2) JP7184719B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7552246B2 (ja) * 2020-10-19 2024-09-18 株式会社レゾナック ＳｉＣ基板の評価方法、ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣデバイスの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103370454B (zh) 2011-04-21 2015-09-09 新日铁住金株式会社 外延碳化硅单晶基板及其制造方法
CN107110782B (zh) 2015-01-28 2020-12-29 东丽工程株式会社 宽带隙半导体基板的缺陷检查方法和缺陷检查装置
JP2015129087A (ja) 2015-02-06 2015-07-16 住友電気工業株式会社 炭化珪素基板

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