JP7184719B2 - ＳｉＣエピタキシャルウェハ - Google Patents
ＳｉＣエピタキシャルウェハ Download PDFInfo
- Publication number
- JP7184719B2 JP7184719B2 JP2019161167A JP2019161167A JP7184719B2 JP 7184719 B2 JP7184719 B2 JP 7184719B2 JP 2019161167 A JP2019161167 A JP 2019161167A JP 2019161167 A JP2019161167 A JP 2019161167A JP 7184719 B2 JP7184719 B2 JP 7184719B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- sic substrate
- epitaxial layer
- strip
- stacking faults
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 86
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 122
- 229910010271 silicon carbide Inorganic materials 0.000 description 120
- 235000012431 wafers Nutrition 0.000 description 30
- 238000005424 photoluminescence Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 23
- 230000007547 defect Effects 0.000 description 22
- 230000005284 excitation Effects 0.000 description 18
- 238000011156 evaluation Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 11
- 238000003475 lamination Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000103 photoluminescence spectrum Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000012854 evaluation process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019161167A JP7184719B2 (ja) | 2019-09-04 | 2019-09-04 | ＳｉＣエピタキシャルウェハ |
| JP2022186625A JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019161167A JP7184719B2 (ja) | 2019-09-04 | 2019-09-04 | ＳｉＣエピタキシャルウェハ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018194020A Division JP6585799B1 (ja) | 2018-10-15 | 2018-10-15 | ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022186625A Division JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020063186A JP2020063186A (ja) | 2020-04-23 |
| JP2020063186A5 JP2020063186A5 (enExample) | 2021-11-18 |
| JP7184719B2 true JP7184719B2 (ja) | 2022-12-06 |
Family
ID=70388098
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161167A Active JP7184719B2 (ja) | 2019-09-04 | 2019-09-04 | ＳｉＣエピタキシャルウェハ |
| JP2022186625A Active JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022186625A Active JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP7184719B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7552246B2 (ja) * | 2020-10-19 | 2024-09-18 | 株式会社レゾナック | ＳｉＣ基板の評価方法、ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣデバイスの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012144614A1 (ja) | 2011-04-21 | 2012-10-26 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
| JP2015129087A (ja) | 2015-02-06 | 2015-07-16 | 住友電気工業株式会社 | 炭化珪素基板 |
| WO2016121628A1 (ja) | 2015-01-28 | 2016-08-04 | 東レエンジニアリング株式会社 | ワイドギャップ半導体基板の欠陥検査方法及び欠陥検査装置 |
-
2019
- 2019-09-04 JP JP2019161167A patent/JP7184719B2/ja active Active
-
2022
- 2022-11-22 JP JP2022186625A patent/JP7396442B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012144614A1 (ja) | 2011-04-21 | 2012-10-26 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
| WO2016121628A1 (ja) | 2015-01-28 | 2016-08-04 | 東レエンジニアリング株式会社 | ワイドギャップ半導体基板の欠陥検査方法及び欠陥検査装置 |
| JP2015129087A (ja) | 2015-02-06 | 2015-07-16 | 住友電気工業株式会社 | 炭化珪素基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023016872A (ja) | 2023-02-02 |
| JP7396442B2 (ja) | 2023-12-12 |
| JP2020063186A (ja) | 2020-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6585799B1 (ja) | ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法 | |
| CN109887853B (zh) | SiC外延晶片的评价方法及制造方法 | |
| TWI657171B (zh) | ＳｉＣ磊晶晶圓及其製造方法、以及大凹坑缺陷檢測方法、缺陷識別方法 | |
| JP7447392B2 (ja) | ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法 | |
| JP7065729B2 (ja) | 炭化珪素半導体装置の製造方法 | |
| JP2016025241A (ja) | 炭化珪素半導体装置の製造方法 | |
| CN1877805B (zh) | 化合物半导体构件的损伤评价方法 | |
| JP2019202900A (ja) | ＳｉＣ基板の製造方法 | |
| JP7396442B2 (ja) | ＳｉＣ基板 | |
| JP2020126985A (ja) | ＳｉＣエピタキシャルウェハ及びその製造方法 | |
| JP6003447B2 (ja) | 半導体基板の金属汚染評価方法および半導体基板の製造方法 | |
| JP7552246B2 (ja) | ＳｉＣ基板の評価方法、ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣデバイスの製造方法 | |
| JP2010118668A (ja) | 化合物半導体部材のダメージ評価方法、化合物半導体部材の製造方法、窒化ガリウム系化合物半導体部材及び窒化ガリウム系化合物半導体膜 | |
| KR102628328B1 (ko) | SiC 단결정 기판 | |
| US20240297222A1 (en) | SiC EPITAXIAL WAFER | |
| JP2002141386A (ja) | 転位密度の測定方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211007 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211007 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220816 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221013 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221025 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221124 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7184719 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |