JP2020061454A5 - - Google Patents

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Publication number
JP2020061454A5
JP2020061454A5 JP2018191614A JP2018191614A JP2020061454A5 JP 2020061454 A5 JP2020061454 A5 JP 2020061454A5 JP 2018191614 A JP2018191614 A JP 2018191614A JP 2018191614 A JP2018191614 A JP 2018191614A JP 2020061454 A5 JP2020061454 A5 JP 2020061454A5
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JP
Japan
Prior art keywords
focus ring
substrate support
support assembly
piezoelectric element
assembly according
Prior art date
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Application number
JP2018191614A
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English (en)
Japanese (ja)
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JP7129307B2 (ja
JP2020061454A (ja
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Publication date
Priority claimed from JP2018191614A external-priority patent/JP7129307B2/ja
Priority to JP2018191614A priority Critical patent/JP7129307B2/ja
Application filed filed Critical
Priority to KR1020190108504A priority patent/KR102863314B1/ko
Priority to US16/564,791 priority patent/US11688587B2/en
Priority to CN201910856969.1A priority patent/CN111029237B/zh
Publication of JP2020061454A publication Critical patent/JP2020061454A/ja
Publication of JP2020061454A5 publication Critical patent/JP2020061454A5/ja
Publication of JP7129307B2 publication Critical patent/JP7129307B2/ja
Application granted granted Critical
Priority to US18/137,355 priority patent/US20230298865A1/en
Active legal-status Critical Current
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JP2018191614A 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法 Active JP7129307B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018191614A JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法
KR1020190108504A KR102863314B1 (ko) 2018-10-10 2019-09-03 기판 지지 어셈블리, 플라즈마 처리 장치, 및 플라즈마 처리 방법
US16/564,791 US11688587B2 (en) 2018-10-10 2019-09-09 Substrate support assembly, plasma processing apparatus, and plasma processing method
CN201910856969.1A CN111029237B (zh) 2018-10-10 2019-09-11 基板支承组件、等离子体处理装置、以及等离子体处理方法
US18/137,355 US20230298865A1 (en) 2018-10-10 2023-04-20 Substrate support assembly, plasma processing apparatus, and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018191614A JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2020061454A JP2020061454A (ja) 2020-04-16
JP2020061454A5 true JP2020061454A5 (enExample) 2021-07-26
JP7129307B2 JP7129307B2 (ja) 2022-09-01

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JP2018191614A Active JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法

Country Status (4)

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US (2) US11688587B2 (enExample)
JP (1) JP7129307B2 (enExample)
KR (1) KR102863314B1 (enExample)
CN (1) CN111029237B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713073B (zh) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种耐腐蚀气体输送部件及其等离子体处理装置
JP7701239B2 (ja) * 2021-10-20 2025-07-01 株式会社ディスコ 固定具
CN114758977A (zh) * 2022-03-02 2022-07-15 艾希纳半导体科技(苏州)有限公司 一种压电式静电吸盘
CN115799034B (zh) * 2022-12-01 2024-12-17 拓荆科技股份有限公司 具有聚焦环的下电极组件及半导体沉淀设备
CN118762980B (zh) * 2024-09-04 2024-11-29 中微半导体(上海)有限公司 聚焦环的控温方法、下电极组件及等离子体处理装置

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WO1997008546A1 (en) * 1995-08-31 1997-03-06 Alcan International Limited Ultrasonic probes for use in harsh environments
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US7544270B2 (en) 2005-11-14 2009-06-09 Infineon Technologies Ag Apparatus for processing a substrate
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
KR101216701B1 (ko) * 2009-11-24 2012-12-31 세메스 주식회사 건식 식각 장치
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
JP4831844B1 (ja) * 2010-09-28 2011-12-07 三菱重工業株式会社 常温接合装置および常温接合方法
KR101703281B1 (ko) 2010-12-07 2017-02-06 삼성전자주식회사 다층 전기활성 폴리머 디바이스 및 그 제조방법
JP5401443B2 (ja) * 2010-12-28 2014-01-29 日東電工株式会社 有機ｅｌ素子の製造方法及び製造装置
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
US20130264309A1 (en) * 2012-04-05 2013-10-10 Ian J. Kenworthy Acoustic energy utilization in plasma processing
KR20150107815A (ko) 2013-01-16 2015-09-23 바이엘 머티리얼사이언스 아게 다층 전기기계 변환기의 제조 방법
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US11404249B2 (en) * 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus

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