CN111029237B - 基板支承组件、等离子体处理装置、以及等离子体处理方法 - Google Patents

基板支承组件、等离子体处理装置、以及等离子体处理方法 Download PDF

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Publication number
CN111029237B
CN111029237B CN201910856969.1A CN201910856969A CN111029237B CN 111029237 B CN111029237 B CN 111029237B CN 201910856969 A CN201910856969 A CN 201910856969A CN 111029237 B CN111029237 B CN 111029237B
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Prior art keywords
piezoelectric elements
region
support assembly
substrate support
focus ring
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CN201910856969.1A
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Chinese (zh)
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CN111029237A (zh
Inventor
池上真史
佐佐木康晴
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
CN201910856969.1A 2018-10-10 2019-09-11 基板支承组件、等离子体处理装置、以及等离子体处理方法 Active CN111029237B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-191614 2018-10-10
JP2018191614A JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法

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CN111029237A CN111029237A (zh) 2020-04-17
CN111029237B true CN111029237B (zh) 2024-02-20

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US (2) US11688587B2 (enExample)
JP (1) JP7129307B2 (enExample)
KR (1) KR102863314B1 (enExample)
CN (1) CN111029237B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713073B (zh) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种耐腐蚀气体输送部件及其等离子体处理装置
JP7701239B2 (ja) * 2021-10-20 2025-07-01 株式会社ディスコ 固定具
CN114758977A (zh) * 2022-03-02 2022-07-15 艾希纳半导体科技(苏州)有限公司 一种压电式静电吸盘
CN115799034B (zh) * 2022-12-01 2024-12-17 拓荆科技股份有限公司 具有聚焦环的下电极组件及半导体沉淀设备
CN118762980B (zh) * 2024-09-04 2024-11-29 中微半导体(上海)有限公司 聚焦环的控温方法、下电极组件及等离子体处理装置

Citations (3)

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CN105229809A (zh) * 2013-01-16 2016-01-06 拜耳材料科学股份公司 用于生产多层机电换能器的方法
CN105810609A (zh) * 2015-01-16 2016-07-27 朗姆研究公司 半导体晶片处理期间控制边缘处理的可移动边缘耦合环
CN108630514A (zh) * 2017-03-22 2018-10-09 东京毅力科创株式会社 基板处理装置

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US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US7544270B2 (en) 2005-11-14 2009-06-09 Infineon Technologies Ag Apparatus for processing a substrate
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
KR101216701B1 (ko) * 2009-11-24 2012-12-31 세메스 주식회사 건식 식각 장치
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
JP4831844B1 (ja) * 2010-09-28 2011-12-07 三菱重工業株式会社 常温接合装置および常温接合方法
KR101703281B1 (ko) 2010-12-07 2017-02-06 삼성전자주식회사 다층 전기활성 폴리머 디바이스 및 그 제조방법
JP5401443B2 (ja) * 2010-12-28 2014-01-29 日東電工株式会社 有機ｅｌ素子の製造方法及び製造装置
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CN105810609A (zh) * 2015-01-16 2016-07-27 朗姆研究公司 半导体晶片处理期间控制边缘处理的可移动边缘耦合环
CN108630514A (zh) * 2017-03-22 2018-10-09 东京毅力科创株式会社 基板处理装置

Also Published As

Publication number Publication date
CN111029237A (zh) 2020-04-17
US20200118787A1 (en) 2020-04-16
US20230298865A1 (en) 2023-09-21
KR20200040659A (ko) 2020-04-20
US11688587B2 (en) 2023-06-27
JP7129307B2 (ja) 2022-09-01
KR102863314B1 (ko) 2025-09-22
JP2020061454A (ja) 2020-04-16

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