JP2020057739A5 - - Google Patents

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Publication number
JP2020057739A5
JP2020057739A5 JP2018189244A JP2018189244A JP2020057739A5 JP 2020057739 A5 JP2020057739 A5 JP 2020057739A5 JP 2018189244 A JP2018189244 A JP 2018189244A JP 2018189244 A JP2018189244 A JP 2018189244A JP 2020057739 A5 JP2020057739 A5 JP 2020057739A5
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JP
Japan
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electrode
dielectric layer
semiconductor
forming
semiconductor device
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JP2018189244A
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English (en)
Japanese (ja)
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JP2020057739A (ja
JP7262959B2 (ja
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Priority to JP2018189244A priority Critical patent/JP7262959B2/ja
Priority claimed from JP2018189244A external-priority patent/JP7262959B2/ja
Priority to US16/589,475 priority patent/US11011663B2/en
Publication of JP2020057739A publication Critical patent/JP2020057739A/ja
Publication of JP2020057739A5 publication Critical patent/JP2020057739A5/ja
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JP2018189244A 2018-10-04 2018-10-04 半導体素子、半導体素子の製造方法 Active JP7262959B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018189244A JP7262959B2 (ja) 2018-10-04 2018-10-04 半導体素子、半導体素子の製造方法
US16/589,475 US11011663B2 (en) 2018-10-04 2019-10-01 Semiconductor element for oscillating or detecting terahertz wave and manufacturing method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018189244A JP7262959B2 (ja) 2018-10-04 2018-10-04 半導体素子、半導体素子の製造方法

Publications (3)

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JP2020057739A JP2020057739A (ja) 2020-04-09
JP2020057739A5 true JP2020057739A5 (enExample) 2021-11-11
JP7262959B2 JP7262959B2 (ja) 2023-04-24

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JP2018189244A Active JP7262959B2 (ja) 2018-10-04 2018-10-04 半導体素子、半導体素子の製造方法

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US (1) US11011663B2 (enExample)
JP (1) JP7262959B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374386B1 (en) * 2018-06-07 2019-08-06 Finisar Corporation Chip on carrier
EP3910787A4 (en) * 2019-01-09 2022-09-21 Pioneer Corporation ELECTROMAGNETIC WAVE TRANSMITTER AND ELECTROMAGNETIC WAVE COMMUNICATION SYSTEM
US11552204B2 (en) * 2019-04-03 2023-01-10 Ohio State Innovation Foundation Photonic detector coupled with a dielectric resonator antenna
CN112202415B (zh) * 2020-09-25 2021-09-24 杭州星阖科技有限公司 一种体声波谐振器的制造工艺方法和体声波谐振器
JP7574052B2 (ja) * 2020-10-29 2024-10-28 キヤノン株式会社 発振器
WO2022168479A1 (ja) * 2021-02-03 2022-08-11 キヤノン株式会社 アンテナ装置およびカメラシステム
JP7746142B2 (ja) * 2021-02-03 2025-09-30 キヤノン株式会社 アンテナ装置およびカメラシステム
CN115249890B (zh) * 2021-04-28 2025-04-01 合肥工业大学 一种太赫兹信号探测装置及其制备方法
JP7742724B2 (ja) * 2021-06-07 2025-09-22 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP7695148B2 (ja) * 2021-08-13 2025-06-18 日本放送協会 負性微分抵抗素子
JP2023110685A (ja) * 2022-01-28 2023-08-09 キヤノン株式会社 共鳴トンネルダイオード、発振器および検出システム
JP2024147414A (ja) * 2023-04-03 2024-10-16 ソニーグループ株式会社 ダイオードおよび高周波デバイス
CN116878666B (zh) * 2023-06-26 2025-09-05 之江实验室 太赫兹动态电感热辐射计及其制备方法及太赫兹探测系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3789179B2 (ja) * 1995-11-30 2006-06-21 松下電器産業株式会社 量子化機能素子とそれを用いた量子化機能装置、ならびにそれらの製造方法
DE69931097T2 (de) * 1998-02-25 2006-10-19 Nippon Telegraph And Telephone Corp. Oberflächenemittierender Halbleiterlaser mit vertikalem Resonator
WO2008105888A2 (en) * 2006-05-31 2008-09-04 Georgia Tech Research Corporation Integrated sensing probes, methods of fabrication thereof, and methods of use thereof
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5441470B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5590879B2 (ja) * 2009-12-25 2014-09-17 キヤノン株式会社 発生素子及び半導体素子
CN102564601A (zh) * 2010-12-22 2012-07-11 精工爱普生株式会社 热式光检测装置、电子设备、热式光检测器及其制造方法
JP6247495B2 (ja) * 2012-11-26 2017-12-13 キヤノン株式会社 半導体装置、及びその製造方法
JP6510802B2 (ja) * 2014-12-08 2019-05-08 ローム株式会社 テラヘルツ素子およびその製造方法
JP7076937B2 (ja) * 2015-06-15 2022-05-30 キヤノン株式会社 半導体素子
CA3036827A1 (en) * 2016-09-14 2018-03-22 Redwave Energy, Inc. Structures, system and method for converting electromagnetic radiation to electrical energy using metamaterials, rectennas and compensation structures

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