JP2022071982A5 - - Google Patents

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Publication number
JP2022071982A5
JP2022071982A5 JP2020181147A JP2020181147A JP2022071982A5 JP 2022071982 A5 JP2022071982 A5 JP 2022071982A5 JP 2020181147 A JP2020181147 A JP 2020181147A JP 2020181147 A JP2020181147 A JP 2020181147A JP 2022071982 A5 JP2022071982 A5 JP 2022071982A5
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JP
Japan
Prior art keywords
layer
semiconductor layer
conductor
oscillator
resistance element
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JP2020181147A
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English (en)
Japanese (ja)
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JP2022071982A (ja
JP7574052B2 (ja
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Priority to JP2020181147A priority Critical patent/JP7574052B2/ja
Priority claimed from JP2020181147A external-priority patent/JP7574052B2/ja
Priority to US17/510,152 priority patent/US11496095B2/en
Publication of JP2022071982A publication Critical patent/JP2022071982A/ja
Publication of JP2022071982A5 publication Critical patent/JP2022071982A5/ja
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Publication of JP7574052B2 publication Critical patent/JP7574052B2/ja
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JP2020181147A 2020-10-29 2020-10-29 発振器 Active JP7574052B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020181147A JP7574052B2 (ja) 2020-10-29 2020-10-29 発振器
US17/510,152 US11496095B2 (en) 2020-10-29 2021-10-25 Oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020181147A JP7574052B2 (ja) 2020-10-29 2020-10-29 発振器

Publications (3)

Publication Number Publication Date
JP2022071982A JP2022071982A (ja) 2022-05-17
JP2022071982A5 true JP2022071982A5 (enExample) 2023-10-24
JP7574052B2 JP7574052B2 (ja) 2024-10-28

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Family Applications (1)

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JP2020181147A Active JP7574052B2 (ja) 2020-10-29 2020-10-29 発振器

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US (1) US11496095B2 (enExample)
JP (1) JP7574052B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024147414A (ja) * 2023-04-03 2024-10-16 ソニーグループ株式会社 ダイオードおよび高周波デバイス
WO2025211044A1 (ja) * 2024-04-02 2025-10-09 ソニーグループ株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7839226B2 (en) 2006-07-18 2010-11-23 Raytheon Company Method and apparatus for effecting stable operation of resonant tunneling diodes
JP5171539B2 (ja) 2007-11-29 2013-03-27 キヤノン株式会社 共鳴トンネル構造体
JP5441470B2 (ja) 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5606061B2 (ja) 2009-12-25 2014-10-15 キヤノン株式会社 発振素子
JP6282041B2 (ja) 2013-03-29 2018-02-21 キヤノン株式会社 発振器
JP7262959B2 (ja) * 2018-10-04 2023-04-24 キヤノン株式会社 半導体素子、半導体素子の製造方法

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