JP7262959B2 - 半導体素子、半導体素子の製造方法 - Google Patents

半導体素子、半導体素子の製造方法 Download PDF

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Publication number
JP7262959B2
JP7262959B2 JP2018189244A JP2018189244A JP7262959B2 JP 7262959 B2 JP7262959 B2 JP 7262959B2 JP 2018189244 A JP2018189244 A JP 2018189244A JP 2018189244 A JP2018189244 A JP 2018189244A JP 7262959 B2 JP7262959 B2 JP 7262959B2
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electrode
dielectric layer
semiconductor
layer
forming
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JP2020057739A (ja
JP2020057739A5 (enExample
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泰史 小山
潤 伊庭
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Canon Inc
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Canon Inc
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Priority to JP2018189244A priority Critical patent/JP7262959B2/ja
Priority to US16/589,475 priority patent/US11011663B2/en
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Publication of JP2020057739A5 publication Critical patent/JP2020057739A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Aerials (AREA)
JP2018189244A 2018-10-04 2018-10-04 半導体素子、半導体素子の製造方法 Active JP7262959B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018189244A JP7262959B2 (ja) 2018-10-04 2018-10-04 半導体素子、半導体素子の製造方法
US16/589,475 US11011663B2 (en) 2018-10-04 2019-10-01 Semiconductor element for oscillating or detecting terahertz wave and manufacturing method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018189244A JP7262959B2 (ja) 2018-10-04 2018-10-04 半導体素子、半導体素子の製造方法

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JP2020057739A JP2020057739A (ja) 2020-04-09
JP2020057739A5 JP2020057739A5 (enExample) 2021-11-11
JP7262959B2 true JP7262959B2 (ja) 2023-04-24

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US10374386B1 (en) * 2018-06-07 2019-08-06 Finisar Corporation Chip on carrier
EP3910787A4 (en) * 2019-01-09 2022-09-21 Pioneer Corporation ELECTROMAGNETIC WAVE TRANSMITTER AND ELECTROMAGNETIC WAVE COMMUNICATION SYSTEM
US11552204B2 (en) * 2019-04-03 2023-01-10 Ohio State Innovation Foundation Photonic detector coupled with a dielectric resonator antenna
CN112202415B (zh) * 2020-09-25 2021-09-24 杭州星阖科技有限公司 一种体声波谐振器的制造工艺方法和体声波谐振器
JP7574052B2 (ja) * 2020-10-29 2024-10-28 キヤノン株式会社 発振器
WO2022168479A1 (ja) * 2021-02-03 2022-08-11 キヤノン株式会社 アンテナ装置およびカメラシステム
JP7746142B2 (ja) * 2021-02-03 2025-09-30 キヤノン株式会社 アンテナ装置およびカメラシステム
CN115249890B (zh) * 2021-04-28 2025-04-01 合肥工业大学 一种太赫兹信号探测装置及其制备方法
JP7742724B2 (ja) * 2021-06-07 2025-09-22 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP7695148B2 (ja) * 2021-08-13 2025-06-18 日本放送協会 負性微分抵抗素子
JP2023110685A (ja) * 2022-01-28 2023-08-09 キヤノン株式会社 共鳴トンネルダイオード、発振器および検出システム
JP2024147414A (ja) * 2023-04-03 2024-10-16 ソニーグループ株式会社 ダイオードおよび高周波デバイス
CN116878666B (zh) * 2023-06-26 2025-09-05 之江实验室 太赫兹动态电感热辐射计及其制备方法及太赫兹探测系统

Citations (2)

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JP2010233031A (ja) 2009-03-27 2010-10-14 Canon Inc 共振器
JP2017005690A (ja) 2015-06-15 2017-01-05 キヤノン株式会社 半導体素子

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JP3789179B2 (ja) * 1995-11-30 2006-06-21 松下電器産業株式会社 量子化機能素子とそれを用いた量子化機能装置、ならびにそれらの製造方法
DE69931097T2 (de) * 1998-02-25 2006-10-19 Nippon Telegraph And Telephone Corp. Oberflächenemittierender Halbleiterlaser mit vertikalem Resonator
WO2008105888A2 (en) * 2006-05-31 2008-09-04 Georgia Tech Research Corporation Integrated sensing probes, methods of fabrication thereof, and methods of use thereof
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5590879B2 (ja) * 2009-12-25 2014-09-17 キヤノン株式会社 発生素子及び半導体素子
CN102564601A (zh) * 2010-12-22 2012-07-11 精工爱普生株式会社 热式光检测装置、电子设备、热式光检测器及其制造方法
JP6247495B2 (ja) * 2012-11-26 2017-12-13 キヤノン株式会社 半導体装置、及びその製造方法
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Patent Citations (2)

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JP2010233031A (ja) 2009-03-27 2010-10-14 Canon Inc 共振器
JP2017005690A (ja) 2015-06-15 2017-01-05 キヤノン株式会社 半導体素子

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US11011663B2 (en) 2021-05-18
JP2020057739A (ja) 2020-04-09
US20200111929A1 (en) 2020-04-09

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