JP2020035823A - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP2020035823A JP2020035823A JP2018159365A JP2018159365A JP2020035823A JP 2020035823 A JP2020035823 A JP 2020035823A JP 2018159365 A JP2018159365 A JP 2018159365A JP 2018159365 A JP2018159365 A JP 2018159365A JP 2020035823 A JP2020035823 A JP 2020035823A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims abstract description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 18
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 239000011358 absorbing material Substances 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 abstract description 75
- 150000002367 halogens Chemical class 0.000 abstract description 75
- 238000012546 transfer Methods 0.000 description 57
- 239000007789 gas Substances 0.000 description 46
- 230000007246 mechanism Effects 0.000 description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 239000002019 doping agent Substances 0.000 description 20
- 238000012545 processing Methods 0.000 description 20
- 239000010453 quartz Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910021529 ammonia Inorganic materials 0.000 description 15
- 230000005855 radiation Effects 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052724 xenon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
65 熱処理空間
74 サセプタ
75 保持プレート
77 支持ピン
85 処理ガス供給源
91 載置板
92 積層体
93 凹部
FL フラッシュランプ
HL ハロゲンランプ
W GaN基板
Claims (4)
- 窒化ガリウムの基板に光を照射することによって該基板を加熱する熱処理方法であって、
前記基板を吸光材料にて形成された載置板に載置する載置工程と、
連続点等ランプから前記載置板に光を照射することによって昇温した前記載置板からの熱伝導により前記基板を予備加熱する予備加熱工程と、
前記予備加熱工程にて昇温した前記基板にフラッシュランプからフラッシュ光を照射して加熱するフラッシュ加熱工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記載置板は炭化ケイ素にて形成されることを特徴とする熱処理方法。 - 請求項1または請求項2に記載の熱処理方法において、
前記載置板に形設された凹部に前記基板が載置されることを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記載置板に前記基板が載置された積層体をチャンバー内に搬入する工程をさらに備えることを特徴とする熱処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018159365A JP7303615B2 (ja) | 2018-08-28 | 2018-08-28 | 熱処理方法 |
TW108115888A TWI728352B (zh) | 2018-08-28 | 2019-05-08 | 熱處理方法 |
PCT/JP2019/026235 WO2020044775A1 (ja) | 2018-08-28 | 2019-07-02 | 熱処理方法 |
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JP2018159365A JP7303615B2 (ja) | 2018-08-28 | 2018-08-28 | 熱処理方法 |
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JP2020035823A true JP2020035823A (ja) | 2020-03-05 |
JP7303615B2 JP7303615B2 (ja) | 2023-07-05 |
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JP2018159365A Active JP7303615B2 (ja) | 2018-08-28 | 2018-08-28 | 熱処理方法 |
Country Status (3)
Country | Link |
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JP (1) | JP7303615B2 (ja) |
TW (1) | TWI728352B (ja) |
WO (1) | WO2020044775A1 (ja) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01196837A (ja) * | 1988-02-02 | 1989-08-08 | Fujitsu Ltd | 半導体製造装置 |
JP2001345313A (ja) * | 2000-05-31 | 2001-12-14 | Ebara Corp | 基板処理装置 |
JP2005019650A (ja) * | 2003-06-25 | 2005-01-20 | Toshiba Corp | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
JP2005150608A (ja) * | 2003-11-19 | 2005-06-09 | Seiko Epson Corp | ガラス基板の光処理方法およびデバイス |
JP2010225645A (ja) * | 2009-03-19 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2010238789A (ja) * | 2009-03-30 | 2010-10-21 | Dainippon Screen Mfg Co Ltd | 熱処理用サセプタおよび熱処理装置 |
JP2013048236A (ja) * | 2011-08-24 | 2013-03-07 | Ultratech Inc | GaNLED用高速熱アニール |
JP2014212285A (ja) * | 2013-04-22 | 2014-11-13 | 株式会社クラレ | 結晶性膜の製造方法、結晶性膜、積層体、および発光装置 |
JP2017017275A (ja) * | 2015-07-06 | 2017-01-19 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2017092102A (ja) * | 2015-11-04 | 2017-05-25 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6185398B2 (ja) * | 2014-01-31 | 2017-08-23 | 東京エレクトロン株式会社 | 窒化ガリウム系結晶の成長方法及び熱処理装置 |
-
2018
- 2018-08-28 JP JP2018159365A patent/JP7303615B2/ja active Active
-
2019
- 2019-05-08 TW TW108115888A patent/TWI728352B/zh active
- 2019-07-02 WO PCT/JP2019/026235 patent/WO2020044775A1/ja active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01196837A (ja) * | 1988-02-02 | 1989-08-08 | Fujitsu Ltd | 半導体製造装置 |
JP2001345313A (ja) * | 2000-05-31 | 2001-12-14 | Ebara Corp | 基板処理装置 |
JP2005019650A (ja) * | 2003-06-25 | 2005-01-20 | Toshiba Corp | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
JP2005150608A (ja) * | 2003-11-19 | 2005-06-09 | Seiko Epson Corp | ガラス基板の光処理方法およびデバイス |
JP2010225645A (ja) * | 2009-03-19 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2010238789A (ja) * | 2009-03-30 | 2010-10-21 | Dainippon Screen Mfg Co Ltd | 熱処理用サセプタおよび熱処理装置 |
JP2013048236A (ja) * | 2011-08-24 | 2013-03-07 | Ultratech Inc | GaNLED用高速熱アニール |
JP2014212285A (ja) * | 2013-04-22 | 2014-11-13 | 株式会社クラレ | 結晶性膜の製造方法、結晶性膜、積層体、および発光装置 |
JP2017017275A (ja) * | 2015-07-06 | 2017-01-19 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2017092102A (ja) * | 2015-11-04 | 2017-05-25 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
Also Published As
Publication number | Publication date |
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TWI728352B (zh) | 2021-05-21 |
TW202022946A (zh) | 2020-06-16 |
JP7303615B2 (ja) | 2023-07-05 |
WO2020044775A1 (ja) | 2020-03-05 |
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