JP2020031377A - マルチプレクサ - Google Patents
マルチプレクサ Download PDFInfo
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- JP2020031377A JP2020031377A JP2018156913A JP2018156913A JP2020031377A JP 2020031377 A JP2020031377 A JP 2020031377A JP 2018156913 A JP2018156913 A JP 2018156913A JP 2018156913 A JP2018156913 A JP 2018156913A JP 2020031377 A JP2020031377 A JP 2020031377A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 239000003990 capacitor Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 abstract description 63
- 238000002955 isolation Methods 0.000 abstract description 39
- 239000010408 film Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H7/463—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0153—Electrical filters; Controlling thereof
- H03H7/0161—Bandpass filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1708—Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/175—Series LC in series path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1758—Series LC in shunt or branch path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1766—Parallel LC in series path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1775—Parallel LC in shunt or branch path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1791—Combined LC in shunt or branch path
Abstract
Description
図6(a)から図8は、サンプルAからEの平面図である。サンプルAは比較例に相当し、サンプルBからEは実施例1に相当する。図6(a)に示すように、サンプルAでは、基板10上に弾性波共振器46、47および配線14が設けられている。弾性波共振器46および47の電極指の配列方向(弾性波の伝搬方向)をX方向、電極指の延伸方向をY方向、基板10の法線方向をZ方向とする。
弾性波共振器46:共振周波数が2.26GHzの弾性表面波共振器
弾性波共振器47:共振周波数が2.27GHzの弾性表面波共振器
基板10:厚さが150μmの42°回転YカットX伝搬タンタル酸リチウム基板
配線基板20:厚さが140μmのセラミック基板
各寸法:D1=870μm、D2=630μm、D3=210μm、D4=D5=50μm
D11=30μm、D12=36μm、D13=51μm、D14=34μm、D15=36μm
D21=51μm、D22=34μm、D23=125μm
図12は、実施例1の変形例1の回路例を示す回路図である。図12に示すように、フィルタ40はキャパシタC11からC13並びにインダクタL11およびL12を備えている。フィルタ42は、キャパシタC21からC24、インダクタL21からL24並びに弾性波共振器R21およびR22を備えている。フィルタ44は、キャパシタC31からC33、インダクタL31からL35並びに弾性波共振器R31およびR32を備えている。フィルタ42と44はキャパシタC01を共有している。弾性波共振器R21、R22、R31およびR32は、実施例1と同様に、図3(b)に図示される同じ基板10に設けられる。
図13は、実施例1の変形例2の回路例を示す回路図である。図13に示すように、端子TaとノードN1との間にキャパシタC01およびC02並びにインダクタL01からL03が接続されている。フィルタ40はキャパシタC11およびC12並びにインダクタL11からL13を備えている。フィルタ42は、キャパシタC21、インダクタL21からL23並びに弾性波共振器R21からR25を備えている。フィルタ44は、キャパシタC31からC34、インダクタL31からL34並びに弾性波共振器R31からR33を備えている。フィルタ42と44は、キャパシタC03からC07並びにインダクタL04からL06を共有している。
12、46、47 弾性波共振器
14、14a、14b 配線
15 金属パターン
40、42、44 フィルタ
41、43 LC回路
Claims (11)
- 第1端子と、
第2端子と、
第3端子と、
前記第1端子と前記第2端子との間に接続され、第1キャパシタ、第1インダクタ、および、1または複数の第1弾性波共振器を含み、第1通過帯域を有する第1フィルタと、
前記第1端子と前記第3端子との間に接続され、第2キャパシタ、第2インダクタ、および、1または複数の第2弾性波共振器を含み、前記第1通過帯域より高い第2通過帯域を有する第2フィルタと、
表面に前記1または複数の第1弾性波共振器の少なくとも1つの第1弾性波共振器と前記1または複数の第2弾性波共振器の少なくとも1つの第2弾性波共振器とが設けられた基板と、
前記表面上に設けられ、前記少なくとも1つの第1弾性波共振器と前記少なくとも1つの第2弾性波共振器との間に設けられた金属構造と、
を備えるマルチプレクサ。 - 前記金属構造は、前記表面上に設けられた金属膜である請求項1に記載のマルチプレクサ。
- 前記金属膜は、前記少なくとも1つの第1弾性波共振器から前記少なくとも1つの第2弾性波共振器に向かう方向に交差する方向に複数配列されている請求項2に記載のマルチプレクサ。
- 前記金属膜は、前記少なくとも1つの第1弾性波共振器から前記少なくとも1つの第2弾性波共振器をみたとき前記金属膜で前記少なくとも1つの第2弾性波共振器が隠れるように設けられている請求項2に記載のマルチプレクサ。
- 前記金属構造は、前記第1フィルタ、前記第2フィルタおよび前記表面上の他の導体パターンと電気的に接続されない請求項1から4のいずれか一項に記載のマルチプレクサ。
- 前記金属構造は、前記マルチプレクサ内において前記第1フィルタおよび前記第2フィルタのグランドに電気的に接続される請求項1から4のいずれか一項に記載のマルチプレクサ。
- 前記金属構造は、前記マルチプレクサ内において前記第1フィルタおよび前記第2フィルタに電気的に接続されず、前記第1フィルタおよび前記第2フィルタから独立したグランドに接続される請求項1から4のいずれか一項に記載のマルチプレクサ。
- 前記第1キャパシタ、前記第1インダクタおよび前記1または複数の第1弾性波共振器は、前記第1端子と前記第2端子の間に各々直列接続および/またはシャント接続され、
前記第2キャパシタ、前記第2インダクタおよび前記1または複数の第2弾性波共振器は、前記第1端子と前記第3端子の間に各々直列接続および/またはシャント接続される請求項1から7のいずれか一項に記載のマルチプレクサ。 - 前記第1通過帯域の幅は300MHz以上であり、前記第2通過帯域の幅は300MHz以上である請求項1から8のいずれか一項に記載のマルチプレクサ。
- 前記第1フィルタは第1阻止帯域を有し、
前記第2フィルタは第2阻止帯域を有し、
前記第1通過帯域の少なくとも一部は、前記第2阻止帯域の少なくとも一部と重なり、
前記第2通過帯域の少なくとも一部は、前記第1阻止帯域の少なくとも一部と重なる請求項1から9のいずれか一項に記載のマルチプレクサ。 - 前記第1通過帯域および前記第2阻止帯域は、1700MHzから2200MHzの帯域より広く、前記第2通過帯域および前記第1阻止帯域は、2300MHzから2690MHzの帯域より広い請求項10に記載のマルチプレクサ。
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JP2018156913A JP7341641B2 (ja) | 2018-08-24 | 2018-08-24 | マルチプレクサ |
US16/417,286 US11309868B2 (en) | 2018-08-24 | 2019-05-20 | Multiplexer |
CN201910634057.XA CN110858764B (zh) | 2018-08-24 | 2019-07-15 | 复用器 |
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CN112740549B (zh) * | 2018-09-13 | 2023-08-22 | 株式会社村田制作所 | 多工器以及使用该多工器的高频前端电路及通信装置 |
US11929725B2 (en) | 2020-05-12 | 2024-03-12 | Anhui Anuki Technologies Co., Ltd. | Bandpass filter circuit and multiplexer |
Citations (8)
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WO2005011114A1 (ja) * | 2003-07-29 | 2005-02-03 | Matsushita Electric Industrial Co., Ltd. | 弾性表面波デバイス |
JP2005159563A (ja) * | 2003-11-21 | 2005-06-16 | Fujitsu Media Device Kk | 弾性表面波フィルタ及びそれを用いた無線装置 |
WO2014050307A1 (ja) * | 2012-09-25 | 2014-04-03 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP2015070489A (ja) * | 2013-09-30 | 2015-04-13 | 日本電波工業株式会社 | デュプレクサ及び電子部品 |
JP2016046630A (ja) * | 2014-08-21 | 2016-04-04 | 日本電波工業株式会社 | 弾性表面波デバイス |
WO2016117676A1 (ja) * | 2015-01-23 | 2016-07-28 | 株式会社村田製作所 | フィルタ装置 |
JP2017135445A (ja) * | 2016-01-25 | 2017-08-03 | Tdk株式会社 | バンドパスフィルタおよび分波器 |
JP2018129683A (ja) * | 2017-02-08 | 2018-08-16 | 太陽誘電株式会社 | フィルタ回路、マルチプレクサおよびモジュール |
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US11309868B2 (en) | 2022-04-19 |
US20200067490A1 (en) | 2020-02-27 |
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