JP2020015196A - 粘着性基材、粘着性基材を有する転写装置及び粘着性基材の製造方法 - Google Patents
粘着性基材、粘着性基材を有する転写装置及び粘着性基材の製造方法 Download PDFInfo
- Publication number
- JP2020015196A JP2020015196A JP2018138527A JP2018138527A JP2020015196A JP 2020015196 A JP2020015196 A JP 2020015196A JP 2018138527 A JP2018138527 A JP 2018138527A JP 2018138527 A JP2018138527 A JP 2018138527A JP 2020015196 A JP2020015196 A JP 2020015196A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- adhesive layer
- base material
- substrate
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 116
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 116
- 239000000463 material Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000012790 adhesive layer Substances 0.000 claims abstract description 109
- 239000002245 particle Substances 0.000 claims abstract description 73
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 158
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 3
- 239000002023 wood Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 20
- 229920002050 silicone resin Polymers 0.000 description 15
- 230000005611 electricity Effects 0.000 description 14
- 230000003068 static effect Effects 0.000 description 14
- 239000003822 epoxy resin Substances 0.000 description 13
- 229920000647 polyepoxide Polymers 0.000 description 13
- 239000011370 conductive nanoparticle Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 238000009503 electrostatic coating Methods 0.000 description 7
- 238000007590 electrostatic spraying Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 5
- 239000006229 carbon black Substances 0.000 description 5
- 229920001973 fluoroelastomer Polymers 0.000 description 5
- 239000013464 silicone adhesive Substances 0.000 description 5
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052609 olivine Inorganic materials 0.000 description 2
- 239000010450 olivine Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000013008 moisture curing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/033—Manufacturing methods by local deposition of the material of the bonding area
- H01L2224/0331—Manufacturing methods by local deposition of the material of the bonding area in liquid form
- H01L2224/03312—Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
- H01L2224/868—Bonding techniques
- H01L2224/8685—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Laminated Bodies (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
Abstract
Description
このような本発明の粘着性基材の具体的態様としては、図1(A)に示されるような、片面又は両面に2個以上の凸部を有する凹凸パターンを有する支持基材1の凸部の上面1’のみに粘着層2aが設けられ、この凸部の上面1’の粘着層2aの上面が曲面を有する粘着性基材100Aが挙げられる。また、別の態様としては、図1(B)に示されるような、支持基材1の凸部の上面1’に粘着層2aが設けられ、粘着層2a以外に、支持基材1の凹凸パターンの凹部にも粘着層2bが設けられたものであり、かつ、凹凸パターンの凹部に設けられた粘着層2bの上面の高さが、凸部の上面1’に設けられた粘着層2aの上面の高さよりも低い位置となるように設けられた粘着性基材100Bが挙げられる。以下、本発明における支持基材、粘着層について詳述する。
本発明に使用される支持基材1としては、導電性粒子と絶縁性樹脂とを含み、片面又は両面に2個以上の凸部を有する凹凸パターンを有しているものであれば、特に制限はない。特には、規則的な凹凸パターンを有するものであることが好ましい。
前記導電性粒子は、粒子表面に絶縁被膜を施して配合されても良い。
本発明の粘着性基材100A、100Bは、少なくとも、支持基材1の凹凸パターンの凸部の上面1’に粘着層2aが設けられ、この粘着層2aの上面が曲面を有することを特徴とする。このような形状の粘着層2aを有する粘着性基材であれば、マイクロチップピックアップ時の押し付け圧力を分散させチップに掛かる圧力を低減することができ、また密着面積の低減により低応力で剥離することができる。そのため、微細なチップや粒子を大量に短時間で転写(ダイボンド)することが可能となる。また、本発明における粘着層は、支持基材1の凹凸パターンの凹部にも形成されていても良いが、支持基材の凸部上面の粘着層2aの上面のみが曲面を有することが好ましい。
本発明の粘着性基材は、微細なチップを大量に選択的にピックアップでき、短時間で大量のチップをダイボンドすることが可能であるため、マイクロLED転写用装置において、該粘着性基材をボンディングヘッドとして好適に利用することができる。
また、導電性ナノ粒子を選択的にピックアップし、別の粘着性基材や粘着テープなどに転写して等間隔に配列するための、異方導電性基材等製造用の転写装置の治具(転写用部材)としても、本発明の粘着性基材は有用である。
図2に示すように、酸化膜が形成されたシリコンウエハー(被加工体3)に、フォトレジスト膜4を形成し、公知のフォトリソグラフィー法を用いて凸部の幅30μm、間隔30μm、凸部上面と凹部底面の高さの差30μmの凹凸パターンを形成し、型5を作製した。その型に付加硬化型ジメチルシリコーン樹脂組成物(信越化学工業(株)社製)を流し込み、150℃×4時間加熱して硬化させ、該硬化物をシリコンウエハーから剥がすことで凹凸パターンがシリコンウエハーの逆になったシリコーン樹脂型を作製した。次いで、作製したシリコーン樹脂型にカーボンブラック20質量部を含むエポキシ樹脂組成物を流し込み、100℃×1時間、さらに150℃×2時間加熱して硬化させ、剥がすことで元のシリコンウエハーと同じ凹凸パターンを有するカーボンブラック含有エポキシ樹脂製支持基材を作製した。次いで粘着層として、酢酸ブチル/イソプロピルアルコール(50/50)混合溶液を用いて、付加硬化型シリコーン粘着剤KR−3700(信越化学工業(株)社製、粘着力:8.7N/25mm)を固形分濃度30質量%に希釈し、前記粘着剤を静電噴霧/塗布実験機(アピックヤマダ(株)社製)を用いて前記凹凸パターンの凸部上面に塗布し、該凸部上面に、曲面を有する粘着層を有する粘着性基材を製造した(図3)。粘着層の最大厚さは10μmであった。
実施例1と同様の方法で、酸化膜が形成されたシリコンウエハー(被加工体3)に、凸部の幅20μm、間隔50μm、凸部上面と凹部底面の高さの差40μmの凹凸パターンを形成して型を作製した。その型に付加硬化型ジメチルシリコーン樹脂(信越化学工業(株)社製)を流し込み、150℃×4時間加熱して硬化させ、該硬化物をシリコンウエハーから剥がすことで凹凸パターンがシリコンウエハーの逆になったシリコーン樹脂型を作製した。作製したシリコーン樹脂型にカーボンブラック80質量部を含むエポキシ樹脂組成物を流し込み、100℃×1時間、さらに150℃×2時間加熱して硬化させ、剥がすことで元のシリコンウエハーと同じ凹凸パターンを有するカーボンブラック含有エポキシ樹脂製支持基材を作製した。次いで、酢酸ブチル/イソプロピルアルコール(50/50)混合溶液を用いて、付加硬化型シリコーン粘着剤X−40−3270−1(信越化学工業(株)社製、粘着力:0.15N/25mm)を固形分濃度20質量%に希釈し、前記粘着剤を静電噴霧/塗布実験機(アピックヤマダ(株)社製)を用いて前記凹凸パターンの凸部上面に塗布し、該凸部上面に、曲面を有する粘着層を有する粘着性基材を製造した(図4)。粘着層の最大厚さは8μmであった。
実施例1と同様の方法で、酸化膜が形成されたシリコンウエハー(被加工体3)に、凸部の幅50μm、間隔100μm、凸部上面と凹部底面の高さの差70μmの凹凸パターンを形成して型を作製した。その型に熱硬化性液状フッ素エラストマー(製品名:X−71−359(信越化学工業(株)社製))を流し込み、150℃×2時間加熱して硬化させ、剥がすことで凹凸パターンがシリコンウエハーの逆になったフッ素エラストマー型を作製した。作製したフッ素エラストマー型に銀メッキアクリルパウダーを50質量部含むシリコーン樹脂組成物を流し込み、150℃×4時間加熱して硬化させ、剥がすことで元のシリコンウエハーと同じ凹凸パターンを有するシリコーン樹脂製支持基材を作製した。次いで粘着層として、メチルエチルケトン(MEK)を用いて、アクリル樹脂系粘着剤オリバインBPW6570(トーヨーケム(株)社製、粘着力:25.6N/25mm)を固形分濃度10質量%に希釈し、前記粘着剤を静電噴霧/塗布実験機(アピックヤマダ(株)社製)を用いて前記凹凸パターンの凸部上面に塗布し、該凸部上面に、曲面を有する粘着層を有する粘着性基材を製造した(図5)。粘着層の最大厚さは20μmであった。
実施例1と同様の方法でシリコンウエハー基材に、凸部の幅40μm、間隔50μm、凸部上面と凹部底面の高さの差100μmの凹凸パターンを形成して型を作製した。その型にフッ素エラストマーを流し込み、150℃×2時間加熱して硬化させ、剥がすことで凹凸パターンがシリコンウエハーの逆になったフッ素エラストマー型を作製した。作製した型に二酸化錫/アンチモン導電層を被覆した二酸化チタンを50質量部含むフェノール樹脂組成物を流し込み、150℃×1時間加熱して硬化させ、剥がすことで元のシリコンウエハーと同じ凹凸パターンを有するフェノール樹脂製支持基材を作製した。次いで粘着層として、メチルエチルケトンを用いて、アクリル樹脂系粘着剤オリバインBPW6570を固形分濃度10質量%に希釈し、前記粘着剤を静電噴霧/塗布実験機を用いて前記凹凸パターンの凸部上面に塗布し、曲面を有する粘着層を凸部に有する粘着性基材を製造した(図6)。粘着層の最大厚さは20μmであった。
実施例1と同様の方法でシリコンウエハー基材に、凸部の幅30μm、間隔30μm、凸部上面と凹部底面の高さの差10μmの凹凸パターンを形成して型を作製した。その型に付加硬化型ジメチルシリコーン樹脂(信越化学工業(株)社製)を流し込み、150℃×4時間加熱して硬化させ、剥がすことで凹凸パターンがシリコンウエハーの逆になったシリコーン樹脂型を作製した。作製したシリコーン樹脂型にカーボンブラックを30質量部含むエポキシ樹脂組成物を流し込み、100℃×1時間、さらに150℃×2時間加熱して硬化させ、剥がすことで元のシリコンウエハーと同じ凹凸パターンを有するエポキシ樹脂製基材を作製した。次いで粘着層として、酢酸ブチル/イソプロピルアルコール(50/50)混合溶液を用いて、付加硬化型シリコーン粘着剤X−40−3270−1(信越化学工業(株)社製、粘着力:0.15N/25mm)を固形分濃度20質量%に希釈し、前記粘着剤を静電噴霧/塗布実験機を用いて前記凹凸パターンに塗布し、凸パターンに、上面が曲面の粘着層を有する粘着性基材を作製した(図7)。粘着層の最大厚さは5μmであった。
実施例1と同様の方法で、酸化膜が形成されたシリコンウエハー(被加工体3)に、凸部の幅30μm、高さ30μm、間隔30μmの凹凸パターンを形成して型を作製した。その型に付加硬化型ジメチルシリコーン樹脂(信越化学工業(株)社製)を流し込み、150℃×4時間加熱して硬化させ、剥がすことで凹凸パターンがシリコンウエハーの逆になったシリコーン樹脂型を作製した。作製した型に導電性粒子を含有しないエポキシ樹脂を流し込み、100℃×1時間、さらに150℃×2時間加熱して硬化させ、剥がすことで元のシリコンウエハーと同じ凹凸パターンを有するエポキシ樹脂製支持基材を作製した。次いで粘着層として、酢酸ブチル/イソプロピルアルコール(50/50)混合溶液を用いて、付加硬化型シリコーン粘着剤KR−3700(信越化学工業(株)社製、粘着力:8.7N/25mm)を固形分濃度30質量%に希釈し、前記粘着剤を静電噴霧/塗布実験機を用いて前記凹凸パターンに塗布し、凸パターンに曲面の粘着層を有する粘着性基材を作製した(図8)。粘着層の最大厚さは10μmであった。
粘着剤の塗布方法を静電噴霧/塗布実験機のかわりにハンドスプレーガンを用いた他は、実施例1と同様の条件でエポキシ樹脂製支持基材の凹凸パターンに塗布したところ、凹パターンが粘着層で埋まり、粘着層表面は平坦であり、凹凸パターンを持たない粘着性基材となった(図9)。
実施例1〜5、比較例1〜2で得られた粘着性基材を用いて、PETフィルムの上に散りばめられた絶縁性樹脂で表面処理された銀ナノ粒子を、シリコーン粘着テープやエポキシフィルムに転写した。
実施例1〜5で作製した粘着性基材を用いた場合では、銀ナノ粒子を選択的にピックアップすることができ、粘着テープやフィルム上に転写することができた。特に、実施例1〜4は、支持基材の凸パターンの高さ(凸部上面の高さと、凹部底面の高さとの差)が、凸パターン上部の長辺(凸部の幅)の50%以上であるため、十分な凹凸となり、粘着テープ上に規則正しく転写することができた(図10〜13)。
比較例2で製造した粘着性基材を用いた場合では、粘着性基材が凹凸パターンを持たないため、銀ナノ粒子が基材全面についてしまい、選択的にピックアップすることができず、粘着テープ上に規則正しく転写することができなかった(図15)。
Claims (14)
- 支持基材と、該支持基材に設けられた粘着層とを有する粘着性基材であって、
前記支持基材は、導電性粒子と絶縁性樹脂とを含み、片面又は両面に2個以上の凸部を有する凹凸パターンを有し、
前記粘着層は、少なくとも、前記支持基材の前記凹凸パターンの前記凸部の上面に設けられ、前記凸部の上面の前記粘着層の上面が曲面を有するものであることを特徴とする粘着性基材。 - 前記支持基材の凸部上面の高さと、前記支持基材の前記凹凸パターンの凹部の底面の高さとの差が、前記凸部の幅の50〜500%であることを特徴とする請求項1に記載の粘着性基材。
- 前記支持基材の前記凹凸パターンの隣接する前記凸部の間隔が1μm〜100μmであることを特徴とする請求項1又は請求項2に記載の粘着性基材。
- 前記支持基材の前記凹凸パターンの前記凸部の幅が1μm〜100μmであることを特徴とする請求項1から請求項3のいずれか1項に記載の粘着性基材。
- 前記粘着層は、前記支持基材の前記凹凸パターンの前記凸部の上面のみに設けられたものであることを特徴とする請求項1から請求項4のいずれか1項に記載の粘着性基材。
- 前記粘着層は、前記支持基材の前記凹部にも設けられたものであり、かつ、該凹部に設けられた前記粘着層の上面の高さが、前記凸部の上面に設けられた前記粘着層の上面の高さよりも低い位置となるように設けられたものであることを特徴とする請求項1から請求項4のいずれか1項に記載の粘着性基材。
- 前記支持基材の前記凸部の上面に設けられた前記粘着層の上面の高さと、前記凹部の底面の高さとの差が最長1μm〜100μmであることを特徴とする請求項5に記載の粘着性基材。
- 前記支持基材の前記凸部の上面に設けられた粘着層の上面の高さと、前記支持基材の前記凹部に設けられた粘着層の上面の高さとの差が最長1μm〜100μmであることを特徴とする請求項6に記載の粘着性基材。
- 前記粘着層の最大厚さが0.01μm〜100μmであることを特徴とする請求項1から請求項6のいずれか1項に記載の粘着性基材。
- 前記支持基材が、前記導電性粒子及び前記絶縁性樹脂の合計100質量部に対して、前記導電性粒子を10〜90質量部含むものであることを特徴とする請求項1から請求項9のいずれか1項に記載の粘着性基材。
- 前記導電性粒子のレーザー回折式粒度分布測定装置で測定されるメジアン径が0.01μm〜100μmであることを特徴とする請求項1から請求項10のいずれか1項に記載の粘着性基材。
- 前記粘着層の粘着力が、JIS Z 0237:2009に準拠した、23℃、引きはがし角度180°、及び剥離速度300mm/minの条件での剥離時の粘着力が、0.05〜50(N/25mm幅)であることを特徴とする請求項1から請求項11のいずれか1項に記載の粘着性基材。
- 請求項1から請求項12のいずれか1項に記載の粘着性基材を転写用部材として有するものであることを特徴とする転写装置。
- 請求項1から請求項12のいずれか1項に記載の粘着性基材の製造方法であって、静電気力でノズルから粘着剤を塗布することによって、前記支持基材の、少なくとも前記凸部の上面に前記粘着層を形成することを特徴とする粘着性基材の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018138527A JP6983123B2 (ja) | 2018-07-24 | 2018-07-24 | 粘着性基材、粘着性基材を有する転写装置及び粘着性基材の製造方法 |
US16/444,000 US10818618B2 (en) | 2018-07-24 | 2019-06-18 | Adhesive substrate, transfer device having adhesive substrate, and method for producing adhesive substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018138527A JP6983123B2 (ja) | 2018-07-24 | 2018-07-24 | 粘着性基材、粘着性基材を有する転写装置及び粘着性基材の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020015196A true JP2020015196A (ja) | 2020-01-30 |
JP6983123B2 JP6983123B2 (ja) | 2021-12-17 |
Family
ID=69177496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018138527A Active JP6983123B2 (ja) | 2018-07-24 | 2018-07-24 | 粘着性基材、粘着性基材を有する転写装置及び粘着性基材の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10818618B2 (ja) |
JP (1) | JP6983123B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024063123A1 (ja) * | 2022-09-22 | 2024-03-28 | リンテック株式会社 | 粘着シート及び電子部品又は半導体装置の製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11360867B1 (en) | 2021-03-31 | 2022-06-14 | Netapp, Inc. | Re-aligning data replication configuration of primary and secondary data serving entities of a cross-site storage solution after a failover event |
US11934670B2 (en) | 2021-03-31 | 2024-03-19 | Netapp, Inc. | Performing various operations at the granularity of a consistency group within a cross-site storage solution |
US11740811B2 (en) | 2021-03-31 | 2023-08-29 | Netapp, Inc. | Reseeding a mediator of a cross-site storage solution |
US11893261B2 (en) | 2021-05-05 | 2024-02-06 | Netapp, Inc. | Usage of OP logs to synchronize across primary and secondary storage clusters of a cross-site distributed storage system and lightweight OP logging |
US11892982B2 (en) | 2021-10-20 | 2024-02-06 | Netapp, Inc. | Facilitating immediate performance of volume resynchronization with the use of passive cache entries |
US11907562B2 (en) | 2022-07-11 | 2024-02-20 | Netapp, Inc. | Methods and storage nodes to decrease delay in resuming input output (I/O) operations after a non-disruptive event for a storage object of a distributed storage system by utilizing asynchronous inflight replay of the I/O operations |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587751A (ja) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | ブラウン管 |
JPH1067971A (ja) * | 1996-08-28 | 1998-03-10 | Canon Inc | ダイシングテープ |
JP2001351879A (ja) * | 2001-04-06 | 2001-12-21 | Oki Electric Ind Co Ltd | ダイシングテープ |
JP2010083934A (ja) * | 2008-09-30 | 2010-04-15 | Unitika Ltd | 易接着ポリエステルフィルム |
JP2016092004A (ja) * | 2014-10-31 | 2016-05-23 | デクセリアルズ株式会社 | 異方性導電フィルム |
JP2016521645A (ja) * | 2013-06-06 | 2016-07-25 | スリーエム イノベイティブ プロパティズ カンパニー | 構造化接着剤物品を調製する方法 |
JP2018098303A (ja) * | 2016-12-09 | 2018-06-21 | 信越ポリマー株式会社 | トレイ保持治具及びその製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01299884A (ja) * | 1988-05-28 | 1989-12-04 | Tomoegawa Paper Co Ltd | ダイボンディング接着テープ |
JP2005209454A (ja) | 2004-01-21 | 2005-08-04 | Sumitomo Bakelite Co Ltd | 異方導電フィルムの製造方法 |
US9209059B2 (en) * | 2009-12-17 | 2015-12-08 | Cooledge Lighting, Inc. | Method and eletrostatic transfer stamp for transferring semiconductor dice using electrostatic transfer printing techniques |
TWI529487B (zh) * | 2011-02-15 | 2016-04-11 | 迪愛生股份有限公司 | 奈米壓印用硬化性組成物之用途、奈米壓印成形體、奈米壓印積層物、複製品模、圖案形成方法、圖案形成物、金屬模的製造方法及樹脂成形體的製造方法 |
US8426227B1 (en) * | 2011-11-18 | 2013-04-23 | LuxVue Technology Corporation | Method of forming a micro light emitting diode array |
US9548332B2 (en) * | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
SG11201504793TA (en) | 2012-12-21 | 2015-07-30 | Shinkawa Kk | Flip chip bonder and method for correcting flatness and deformation amount of bonding stage |
US9093549B2 (en) * | 2013-07-02 | 2015-07-28 | Kulicke And Soffa Industries, Inc. | Bond heads for thermocompression bonders, thermocompression bonders, and methods of operating the same |
US9136243B2 (en) * | 2013-12-03 | 2015-09-15 | Kulicke And Soffa Industries, Inc. | Systems and methods for determining and adjusting a level of parallelism related to bonding of semiconductor elements |
EP3170197B1 (en) | 2014-07-20 | 2021-09-01 | X Display Company Technology Limited | Apparatus and methods for micro-transfer printing |
JP2016001752A (ja) | 2015-08-25 | 2016-01-07 | 日本航空電子工業株式会社 | フリップチップ実装構造、フリップチップ実装方法及びフリップチップ実装構造の使用方法 |
KR101754528B1 (ko) * | 2016-03-23 | 2017-07-06 | 한국광기술원 | 건식 접착구조를 갖는 led 구조체 어레이의 전사체와 이를 이용한 led 구조체 어레이의 이송방법 및 led 구조체 |
US10989376B2 (en) * | 2017-11-28 | 2021-04-27 | Facebook Technologies, Llc | Assembling of strip of micro light emitting diodes onto backplane |
-
2018
- 2018-07-24 JP JP2018138527A patent/JP6983123B2/ja active Active
-
2019
- 2019-06-18 US US16/444,000 patent/US10818618B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587751A (ja) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | ブラウン管 |
JPH1067971A (ja) * | 1996-08-28 | 1998-03-10 | Canon Inc | ダイシングテープ |
JP2001351879A (ja) * | 2001-04-06 | 2001-12-21 | Oki Electric Ind Co Ltd | ダイシングテープ |
JP2010083934A (ja) * | 2008-09-30 | 2010-04-15 | Unitika Ltd | 易接着ポリエステルフィルム |
JP2016521645A (ja) * | 2013-06-06 | 2016-07-25 | スリーエム イノベイティブ プロパティズ カンパニー | 構造化接着剤物品を調製する方法 |
JP2016092004A (ja) * | 2014-10-31 | 2016-05-23 | デクセリアルズ株式会社 | 異方性導電フィルム |
JP2018098303A (ja) * | 2016-12-09 | 2018-06-21 | 信越ポリマー株式会社 | トレイ保持治具及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024063123A1 (ja) * | 2022-09-22 | 2024-03-28 | リンテック株式会社 | 粘着シート及び電子部品又は半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10818618B2 (en) | 2020-10-27 |
JP6983123B2 (ja) | 2021-12-17 |
US20200035627A1 (en) | 2020-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6983123B2 (ja) | 粘着性基材、粘着性基材を有する転写装置及び粘着性基材の製造方法 | |
KR100273499B1 (ko) | 배선기판에전기접속된반도체칩을갖는반도체장치 | |
US11135807B2 (en) | Filler-containing film | |
US10899949B2 (en) | Filler-containing film | |
JP2015025104A (ja) | 導電性接着フィルムの製造方法、導電性接着フィルム、接続体の製造方法 | |
JP2010199087A (ja) | 異方性導電膜及びその製造方法、並びに、接合体及びその製造方法 | |
JP3724606B2 (ja) | 半導体チップの接続構造及びこれに用いる配線基板 | |
JP2022075723A (ja) | フィラー含有フィルム | |
WO2015091673A1 (en) | Bonded assemblies with pre-deposited polymer balls on demarcated areas and methods of forming such bonded assemblies | |
JP2007224111A (ja) | 異方導電性接着シート及びその製造方法 | |
JP6842404B2 (ja) | 粘着性基材の製造方法 | |
JP2020009718A (ja) | 異方性導電フィルム及び異方性導電フィルムの製造方法 | |
JP7332956B2 (ja) | フィラー含有フィルム | |
JP3162068B2 (ja) | 半導体チップの実装方法 | |
TWI775562B (zh) | 異向性導電膜之製造方法、異向性導電膜、異向性導電膜捲裝體、連接構造體之製造方法、連接構造體、填料配置膜之製造方法、及填料配置膜 | |
JP4994653B2 (ja) | 異方導電性接着シート | |
JP2006013542A (ja) | 半導体チップの接続構造及びこれに用いる配線基板 | |
JP2004335663A (ja) | 異方導電フィルムの製造方法 | |
JP3883010B2 (ja) | 半導体チップの接続構造及びこれに用いる配線基板 | |
JP7194229B2 (ja) | 異方性導電フィルムの製造方法、及び異方性導電フィルム | |
JP2018078118A (ja) | 導電性接着フィルム、接続体の製造方法 | |
JP2004111993A (ja) | 電極の接続方法およびこれに用いる接続部材 | |
JP2008130588A (ja) | 半導体用接着組成物付き電子デバイス基板、それを用いた電子デバイスシステムおよび電子デバイスシステムの製造方法 | |
JPH11121073A (ja) | 接続部材およびその製造方法 | |
US20190100663A1 (en) | Anisotropic conductive film and method for manufacturing anisotropic conductive film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200624 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210322 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210406 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210526 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211102 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211122 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6983123 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |