JP2020015091A - SiCと金属被膜又は電気部品とからなる複合構造から固体層を分離する方法 - Google Patents
SiCと金属被膜又は電気部品とからなる複合構造から固体層を分離する方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 46
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- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
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- 239000003574 free electron Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- B23K26/0823—Devices involving rotation of the workpiece
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- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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Abstract
Description
2:固体層
4:生成面
5:改質生成箇所
6:結晶格子面
6a/b/c:結晶格子面
7:結晶格子面端部
8:主要面/第1表面
9:改質
9a/b:改質
10:交線
12:未臨界クラック
11:平坦部
13:機械的応力
14:レーザ放射
29:レーザ
30:再配置装置
32:レーザ放射
45:回転装置
49:中心
50:回転中心
51:接続セグメント
52:方向
60:結晶格子面法線
80:主要面法線
81:第2表面
82:金属層又は電気部品
83:複合構造
90:法平面
92:法平面に垂直な平面
94:結晶格子面端部の延びる方向
103:レーザライン/スクライブライン/線形形状
200:分離で露出された固体層の表面
202:ジグザグ形状山部
204:ジグザグ形状山部の延びる方向
210:第1方向
212:第2方向(第1方向210の反対方向)
400:焦点における放射強度
401:時間
402:多光子プロセスの始まりが生じる焦点におけるIMP−放射強度
403:透過期間
404:電子プラズマ破壊が生じる焦点におけるIBD−放射強度
405:電子生成エネルギー(大部分は透過される)
406:改質の始まりが生じる焦点におけるION−放射強度
408:パルス開始
409:多光子プロセスの始まり
410:多光子プロセスの始まりが生じるパルス開始後のtmp−時間
412:改質の始まりが生じるパルス開始後の時間
413:改質の始まり
414:改質期間
416:吸収BD>吸収ONであるため、電子プラズマ破壊IBD<ION
418:改質破壊
420:パルス端部
450:焦点における電子密度
451:プラズマの始まり(なだれ破壊、最大電子密度の2分の1に対応する)
452:電子プラズマがレーザ放射で振動する
453:既に存在しているアモルファス化結晶領域による線形吸収
5700:光円錐
5702:焦点画像
5703:焦点画像
R:改質の長手方向
Claims (15)
- 複合構造(83)の内部にマイクロクラック(9)を生成する方法であって、少なくとも、
前記複合構造(83)を提供又は生成するステップであって、
前記複合構造(83)は、固体(1)と、前記固体(1)の一方側に設置又は提供された少なくとも1つの金属被膜及び/又は電気部品(82)とを有し、他方側において、平坦面(8)を形成し、
前記固体(1)は、炭化ケイ素(SiC)を含有するか、又は炭化ケイ素(SiC)で形成されるステップと、
前記固体(1)の内部に改質(9)を生成するステップであって、
レーザ放射(14)は、前記平坦面(8)を介して、前記固体(1)に導入され、前記レーザ放射(14)は、多光子励起を生じ、
前記多光子は、プラズマ生成を引き起こし、
前記改質は、材料転換の形態で前記プラズマによって有効となり、
前記材料転換では、前記固体(1)内の圧縮応力が生成され、
前記固体(1)は、特定の改質(9)の周囲領域に未臨界のクラックを成長させ、
前記改質(9)は、前記金属被膜及び/又は前記電気部品(82)から150μm未満の距離に生成され、
前記レーザ放射(14)は、パルスで前記固体(1)内に導入され、
パルスのパルス強度は、特定パルスの開始後10ns以内に、最大パルス強度に達するステップとを備える方法。 - 各パルスは、前記固体(1)内にエネルギーEを導入し、
前記プラズマ生成及び/又は既に生成されたマイクロクラックの結果として、特定パルスのエネルギーEの最大20%、特に、最大15%、最大10%、最大5%、最大1%、又は最大0.5%が、前記金属被膜及び/又は前記電気部品に達するまで、前記固体を透過することを特徴とする請求項1に記載の方法。 - 各パルスの前記プラズマは、前記パルスの開始後、時間x内に生成され、
xは、パルス持続時間yより短く、xは、10ns未満であり、特に、7.5ns未満、5ns未満、3ns未満、2ns未満、1ns未満、0.75ns未満、又は0.5ns未満であり、x<0.5*yであり、特に、x<0.2*y、x<0.1*y、x<0.05*y、又はx<0.01*yが好ましいことを特徴とする請求項1又は2に記載の方法。 - 前記ビーム品質(M2)は、1.4未満であり、特に、1.3未満、1.2未満、又は1.1未満であることを特徴とする請求項1〜3の一項に記載の方法。
- 前記レーザ放射(14)は、9ns未満、特に、8ns未満、7ns未満、6ns未満、5ns未満、4ns未満、3ns未満、2ns未満、1,8ns未満、1.6ns未満、1.4ns未満、1.1ns未満、0.9ns未満、0.75ns未満、0.6ns未満、0.5ns未満、又は0.4ns未満のパルス持続時間で生成されることを特徴とする請求項3に記載の方法。
- 前記最大パルス強度に到達した後のパルスの放射強度は、特に加熱プロセスを生成するには、10ps、特に、少なくとも50ps、少なくとも100ps、500ps、又は1nsの最短持続時間を有し、放射強度の50%を超えると、25ns、特に、15ns、10ns、7.5ns、5ns、3.5ns、2.5ns、又は2nsの最長持続時間を有することを特徴とする請求項1〜5の一項に記載の方法。
- 前記レーザ放射(14)は、規定の方法で、特に、直線偏光で偏光され、
前記レーザ放射の偏光方向は、前記固体の結晶軸に対して、規定の角度、特に、0°又は90°の固定角度、又は規定の角度範囲、特に、−20°〜20°、−10°〜10°、−5°〜5°、−1°〜1°、70°〜110°、80°〜100°、85°〜95°、89°〜91°、又は、<30°の角度、<20°の角度、<15°の角度、<10°の角度、又は<5°の角度に配向されることを特徴とする請求項1〜6の一項に記載の方法。 - 前記レーザビーム(14)によって前記固体(1)の内部に生成された前記改質(9)の長手方向(R)は、前記改質が生成された面(生成面)と、特に、結晶格子面(6)に生じる架空又は仮想交線(10)と間の、特に架空又は仮想上の接続に生じる交線(10)に対して、規定の角度、特に、0°又は90°、又は規定の角度範囲、特に、−20°〜20°、−10°〜10°、−5°〜5°、−1°〜1°、70°〜110°、80°〜100°、85°〜95°、又は89°〜91°で配向されることを特徴とする請求項1〜7の一項に記載の方法。
- 前記レーザ放射(14)は、少なくとも1つの光学要素を介して、前記固体(1)内に導入され、
前記光学要素、特に、レンズは、0.4超、特に、0.5超、0.6超、0.7超、0.8超、又は0.9超の開口数(NA)を有し、
前記固体(1)への進入に先立って、前記レーザ放射(14)は、浸漬流体、特に、浸漬液を通じて導かれることが好ましく、
浸漬流体使用時の前記NAは、1超であることが好ましく、特に、1.1超、1.2超、又は1.3超であることが好ましく、最大数2であることが好ましいことを特徴とする請求項1〜8の一項に記載の方法。 - 前記個々の改質(9)は、前記固体の縦方向(Z)に最大広がりを有し、
前記改質(9)の前記最大広がりは、各場合において、100μm未満、特に、80μm未満、70μm未満、60μm未満、50μm未満、40μm未満、30μm未満、20μm未満、15μm未満、10μm未満、8μm未満、6μm未満、5μm未満、4μm未満、3μm未満、2μm未満、1μm未満、又は0.5μm未満であることが好ましいことを特徴とする請求項1〜9の一項に記載の方法。 - 複数の改質(9)が生成され、1つの線形形状(103)又は複数の線形形状(103)、特に、1つのスクライブライン又は複数のスクライブラインを形成し、
前記未臨界クラックは、前記特定の線形形状(103)の長手方向に対して垂直に、150μm未満、特に、120μm未満、110μm未満、90μm未満、75μm未満、60μm未満、50μm未満、40μm未満、30μm未満、又は25μm未満の平均クラック長を有することを特徴とする請求項1〜10の一項に記載の方法。 - 各場合における2つの直接隣接する線形形状(103)間の距離は、400μm未満、特に、300μm未満、250μm未満、200μm未満、150μm未満、100μm未満、75μm未満、50μm未満、40μm未満、30μm未満、25μm未満、20μm未満、15μm未満、又は10μm未満であることを特徴とする請求項1〜11の一項に記載の方法。
- 回折光学素子(DOE)は、前記レーザ放射(14)の前記固体(1)への透過の上流の前記レーザ放射(14)の進路内に設置され、前記レーザ放射(14)は、複数の焦点を生成するために、前記DOEにより、複数の光路に分割され、
前記DOEは、50μm以下、特に、30μm以下、10μm以下、5μm以下、3μm以下、好ましくは200μmを超える長さの像面湾曲を生成し、
前記DOEは、前記固体(1)の材料特性を変更するために、少なくとも2個、好ましくは少なくとも又はちょうど3個、少なくとも又はちょうど4個、少なくとも又はちょうど又は最大5個、少なくとも又はちょうど又は最大10個、少なくとも又はちょうど又は最大20個、少なくとも又はちょうど又は最大50個、又は最大100個の焦点を同時に生成することを特徴とする請求項1〜12の一項に記載の方法。 - 複合構造(83)の内部にマイクロクラックを生成する方法であって、少なくとも、
前記複合構造(83)を提供するステップであって、
前記複合構造(83)は、固体(1)と、前記固体(1)の一方側に設置又は提供された少なくとも1つの金属被膜及び/又は電気部品(82)とを有し、他方側に平坦面を形成し、
前記固体(1)は、炭化ケイ素(SiC)を含有するか、又は炭化ケイ素(SiC)で形成されるステップと、
前記固体(1)の内部に改質(9)を生成するステップであって、
レーザ放射(14)は、前記平坦面を介して、前記固体(1)に導入され、前記レーザ放射(14)は、多光子励起を生じ、
前記多光子励起は、プラズマ生成を引き起こし、
前記改質(9)は、材料転換の形態で前記プラズマによって有効となり、
前記材料転換では、前記固体(1)内に圧縮応力が生成され、
前記固体(1)は、前記特定の改質(9)の周囲領域に未臨界クラックを成長させ、
前記改質(9)は、前記金属被膜及び/又は前記電気部品(82)から150μm未満の距離に生成され、
前記レーザ放射(14)は、パルスで前記固体(1)内に導入され、
前記各パルスは、前記固体(1)内にエネルギーEを導入し、前記プラズマ生成及び/又は既に生成されたマイクロクラックの結果として、前記特定パルスの前記エネルギーEの最大20%、特に、最大15%、最大10%、最大5%、最大1%、又は最大0.5%が、前記固体(1)を通じて前記金属被膜及び/又は前記電気部品(82)まで進入するステップとを備える方法。 - 複合構造(83)から少なくとも1つの固体層(2)を分離する方法であって、少なくとも、
請求項1〜14の一項に記載の方法を実施するステップと、
前記固体(1)内に応力を生成するため、前記複合構造、特に、前記固体(1)に外的な力を導入し、及び/又は、前記固体(1)内に内的な力を生成するステップとを備え、前記外的な力及び/又は前記内的な力は、前記未臨界クラックのクラック伝搬又は接合が、結果として、分離領域(8)に沿って生じるのに十分な強さである方法。
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