JP2020013905A - イオン注入方法およびイオン注入装置 - Google Patents
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Abstract
Description
Claims (16)
- 第1温度のウェハに対して所定のチャネリング条件を満たすように第1イオンビームを照射することと、
前記第1イオンビームの照射後、前記第1温度とは異なる第2温度の前記ウェハに対して前記所定のチャネリング条件を満たすように第2イオンビームを照射することと、を備えることを特徴とするイオン注入方法。 - 前記第1イオンビームのイオン種は、前記第2イオンビームのイオン種と同じであり、
前記第1イオンビームのエネルギーは、前記第2イオンビームのエネルギーと異なることを特徴とする請求項1に記載のイオン注入方法。 - 前記第2温度は、前記第1温度より高いことを特徴とする請求項1または2に記載のイオン注入方法。
- 前記第2温度は、前記第1温度より低いことを特徴とする請求項1または2に記載のイオン注入方法。
- 前記第2イオンビームのエネルギーは、前記第1イオンビームのエネルギーより低いことを特徴とする請求項1から4のいずれか一項に記載のイオン注入方法。
- 前記第1温度および前記第2温度は、−200℃以上500℃以下であることを特徴とする請求項1から5のいずれか一項に記載のイオン注入方法。
- 前記第1温度および前記第2温度の差は、50℃以上であることを特徴とする請求項1から6のいずれか一項に記載のイオン注入方法。
- 前記第1イオンビームおよび前記第2イオンビームの少なくとも一方の照射前に前記ウェハを温度調整装置を用いて加熱または冷却することをさらに備えることを特徴とする請求項1から7のいずれか一項に記載のイオン注入方法。
- 前記温度調整装置は、前記第1イオンビームおよび前記第2イオンビームの少なくとも一方の照射時に前記ウェハを保持するウェハ保持装置に設けられることを特徴とする請求項8に記載のイオン注入方法。
- 前記第1イオンビームおよび前記第2イオンビームの少なくとも一方の照射中に前記温度調整装置により前記ウェハを加熱または冷却することをさらに備えることを特徴とする請求項9に記載のイオン注入方法。
- 前記温度調整装置は、前記第1イオンビームおよび前記第2イオンビームの少なくとも一方の照射時に前記ウェハを保持するウェハ保持装置から分離されており、
前記温度調整装置により加熱または冷却された前記ウェハを前記ウェハ保持装置に搬送することをさらに備えることを特徴とする請求項8に記載のイオン注入方法。 - 前記温度調整装置は、前記第1イオンビームおよび前記第2イオンビームの少なくとも一方の照射時に前記ウェハが位置する注入処理室とは異なる準備室内に設けられることを特徴とする請求項11に記載のイオン注入方法。
- 前記第1イオンビームおよび前記第2イオンビームの少なくとも一方の照射により前記ウェハに与えられる熱エネルギーを利用して前記ウェハを加熱することをさらに備えることを特徴とする請求項1から12のいずれか一項に記載のイオン注入方法。
- 時間経過による前記ウェハからの熱放散により前記ウェハを冷却することをさらに備えることを特徴とする請求項1から13のいずれか一項に記載のイオン注入方法。
- ウェハを温度調整装置を用いて所定の温度に加熱または冷却し、前記所定の温度の前記ウェハに所定のチャネリング条件を満たすようにイオンビームを照射し、前記所定の温度とは異なる温度で前記所定のチャネリング条件を満たすようにイオンビームを照射したときに前記ウェハ内に形成される注入プロファイルと比較して、深さ方向および前記深さ方向に直交する面内方向の少なくとも一方について異なる注入プロファイルを前記ウェハ内に形成することを特徴とするイオン注入方法。
- イオンビームを輸送するビームライン装置と、
前記イオンビームが照射されるウェハを保持するウェハ保持装置と、
前記ウェハを加熱または冷却するための温度調整装置と、を備え、
前記ウェハを温度調整装置を用いて所定の温度に加熱または冷却し、前記ウェハを所定のチャネリング条件を満たすように前記ウェハ保持装置に保持し、前記ウェハ保持装置に保持される前記所定の温度の前記ウェハに前記イオンビームを照射することを特徴とするイオン注入装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2018135346A JP2020013905A (ja) | 2018-07-18 | 2018-07-18 | イオン注入方法およびイオン注入装置 |
TW108124677A TWI810331B (zh) | 2018-07-18 | 2019-07-12 | 離子植入方法及離子植入裝置 |
US16/512,059 US11830703B2 (en) | 2018-07-18 | 2019-07-15 | Ion implantation method and ion implanter |
KR1020190084885A KR102664606B1 (ko) | 2018-07-18 | 2019-07-15 | 이온주입방법 및 이온주입장치 |
CN201910648386.XA CN110739213A (zh) | 2018-07-18 | 2019-07-18 | 离子注入方法及离子注入装置 |
JP2023118065A JP2023133393A (ja) | 2018-07-18 | 2023-07-20 | イオン注入方法 |
US18/488,854 US20240047176A1 (en) | 2018-07-18 | 2023-10-17 | Ion implantation method and ion implanter |
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DE102019135490A1 (de) * | 2019-12-20 | 2021-06-24 | Infineon Technologies Ag | Ionenstrahl-implantationsverfahren und halbleitervorrichtung |
US11830739B2 (en) * | 2020-10-07 | 2023-11-28 | Applied Materials, Inc. | Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions |
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US11830703B2 (en) | 2023-11-28 |
US20240047176A1 (en) | 2024-02-08 |
JP2023133393A (ja) | 2023-09-22 |
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US20200027697A1 (en) | 2020-01-23 |
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