JP2019536286A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019536286A5 JP2019536286A5 JP2019526469A JP2019526469A JP2019536286A5 JP 2019536286 A5 JP2019536286 A5 JP 2019536286A5 JP 2019526469 A JP2019526469 A JP 2019526469A JP 2019526469 A JP2019526469 A JP 2019526469A JP 2019536286 A5 JP2019536286 A5 JP 2019536286A5
- Authority
- JP
- Japan
- Prior art keywords
- nanoparticles
- substrate
- metal
- group
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 50
- 238000000034 method Methods 0.000 claims 43
- 239000002105 nanoparticle Substances 0.000 claims 24
- 239000000758 substrate Substances 0.000 claims 16
- 238000002844 melting Methods 0.000 claims 13
- 230000008018 melting Effects 0.000 claims 13
- 229910052751 metal Inorganic materials 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 229920000642 polymer Polymers 0.000 claims 9
- 150000001875 compounds Chemical class 0.000 claims 6
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 239000011224 oxide ceramic Substances 0.000 claims 5
- 229910052574 oxide ceramic Inorganic materials 0.000 claims 5
- 239000002245 particle Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000002904 solvent Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 238000007641 inkjet printing Methods 0.000 claims 4
- 238000007639 printing Methods 0.000 claims 4
- 238000007789 sealing Methods 0.000 claims 4
- 239000007787 solid Substances 0.000 claims 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 3
- 238000005245 sintering Methods 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000010953 base metal Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000003618 dip coating Methods 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000007791 liquid phase Substances 0.000 claims 2
- 238000007650 screen-printing Methods 0.000 claims 2
- 238000005507 spraying Methods 0.000 claims 2
- 238000007651 thermal printing Methods 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 239000011800 void material Substances 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910000833 kovar Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/354,137 US20180138110A1 (en) | 2016-11-17 | 2016-11-17 | Enhanced Adhesion by Nanoparticle Layer Having Randomly Configured Voids |
| US15/354,137 | 2016-11-17 | ||
| PCT/US2017/061078 WO2018093677A1 (en) | 2016-11-17 | 2017-11-10 | Enhanced adhesion by nanoparticle layer having randomly configured voids |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019536286A JP2019536286A (ja) | 2019-12-12 |
| JP2019536286A5 true JP2019536286A5 (https=) | 2020-12-24 |
| JP7070971B2 JP7070971B2 (ja) | 2022-05-18 |
Family
ID=62108060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019526469A Active JP7070971B2 (ja) | 2016-11-17 | 2017-11-10 | ランダムに構成されるボイドを有するナノ粒子層により高められた接着 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20180138110A1 (https=) |
| JP (1) | JP7070971B2 (https=) |
| CN (1) | CN109923651A (https=) |
| WO (1) | WO2018093677A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9865527B1 (en) | 2016-12-22 | 2018-01-09 | Texas Instruments Incorporated | Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation |
| US9941194B1 (en) | 2017-02-21 | 2018-04-10 | Texas Instruments Incorporated | Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer |
| JP6743802B2 (ja) * | 2017-11-22 | 2020-08-19 | Tdk株式会社 | 半導体装置 |
| IT201900024259A1 (it) * | 2019-12-17 | 2021-06-17 | St Microelectronics Srl | Dispositivo a semiconduttore e corrispondente procedimento |
| CN115210889A (zh) * | 2020-01-31 | 2022-10-18 | 松下知识产权经营株式会社 | 光半导体装置用封装及光半导体装置 |
| US20210376563A1 (en) * | 2020-05-26 | 2021-12-02 | Excelitas Canada, Inc. | Semiconductor Side Emitting Laser Leadframe Package and Method of Producing Same |
| JP7451455B2 (ja) * | 2021-03-19 | 2024-03-18 | 株式会社東芝 | 半導体装置 |
| CN118752178B (zh) * | 2024-06-21 | 2025-07-08 | 哈尔滨理工大学 | 一种快速生成全金属间化合物接头的制备方法和应用 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4136319B2 (ja) * | 2000-04-14 | 2008-08-20 | 日本碍子株式会社 | ハニカム構造体及びその製造方法 |
| JP2002231252A (ja) * | 2001-01-31 | 2002-08-16 | Sanyo Electric Co Ltd | アルカリ蓄電池用焼結式基板の製造方法 |
| CN1846835A (zh) * | 2001-02-16 | 2006-10-18 | 住友钛株式会社 | 钛粉末烧结体 |
| US20040161596A1 (en) * | 2001-05-31 | 2004-08-19 | Noriyuki Taoka | Porous ceramic sintered body and method of producing the same, and diesel particulate filter |
| KR20050040714A (ko) * | 2003-10-28 | 2005-05-03 | 티디케이가부시기가이샤 | 다공질 기능성막, 센서, 다공질 기능성막의 제조방법,다공질 금속막의 제조방법 및 센서의 제조방법 |
| US7126215B2 (en) * | 2004-03-30 | 2006-10-24 | Intel Corporation | Microelectronic packages including nanocomposite dielectric build-up materials and nanocomposite solder resist |
| US20080106853A1 (en) * | 2004-09-30 | 2008-05-08 | Wataru Suenaga | Process for Producing Porous Sintered Metal |
| US20060163744A1 (en) * | 2005-01-14 | 2006-07-27 | Cabot Corporation | Printable electrical conductors |
| US7781123B2 (en) * | 2005-06-06 | 2010-08-24 | Delphi Technologies, Inc. | Method and apparatus for forming electrode interconnect contacts for a solid-oxide fuel cell stack |
| DE102005028704B4 (de) * | 2005-06-20 | 2016-09-08 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauteils mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten |
| KR100759556B1 (ko) * | 2005-10-17 | 2007-09-18 | 삼성에스디아이 주식회사 | 음극 활물질, 그 제조 방법 및 이를 채용한 음극과 리튬전지 |
| BRPI0806916A2 (pt) * | 2007-01-19 | 2014-04-29 | Cinv Ag | Implante poroso, não degradável feito por moldagem de pó |
| JP5123633B2 (ja) * | 2007-10-10 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置および接続材料 |
| TWI456707B (zh) * | 2008-01-28 | 2014-10-11 | 瑞薩電子股份有限公司 | 半導體裝置及其製造方法 |
| DE102011085224A1 (de) * | 2011-09-27 | 2013-03-28 | Siemens Aktiengesellschaft | Speicherelement und Verfahren zu dessen Herstellung |
| JP5687175B2 (ja) * | 2011-11-28 | 2015-03-18 | 有限会社 ナプラ | 微細空間内に機能部分を形成する方法 |
| US9583453B2 (en) * | 2012-05-30 | 2017-02-28 | Ormet Circuits, Inc. | Semiconductor packaging containing sintering die-attach material |
| US20140120356A1 (en) * | 2012-06-18 | 2014-05-01 | Ormet Circuits, Inc. | Conductive film adhesive |
| WO2014129626A1 (ja) | 2013-02-22 | 2014-08-28 | 古河電気工業株式会社 | 接続構造体、及び半導体装置 |
| JP5975911B2 (ja) | 2013-03-15 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN104419848B (zh) * | 2013-08-30 | 2016-09-28 | 成都易态科技有限公司 | 粉末烧结金属多孔体、过滤元件及改善其渗透性的方法 |
| EP2924719A1 (en) * | 2014-03-25 | 2015-09-30 | ABB Technology AG | Method of manufacturing a power semiconductor device using a temporary protective coating for metallisation |
| GB201413701D0 (en) * | 2014-08-01 | 2014-09-17 | Isis Innovation | Process |
| US9305869B1 (en) * | 2014-12-31 | 2016-04-05 | Texas Instruments Incorporated | Packaged semiconductor device having leadframe features as pressure valves against delamination |
| US9844134B2 (en) * | 2015-01-29 | 2017-12-12 | Infineon Technologies Ag | Device including a metallization layer and method of manufacturing a device |
| US20180166369A1 (en) * | 2016-12-14 | 2018-06-14 | Texas Instruments Incorporated | Bi-Layer Nanoparticle Adhesion Film |
| US9865527B1 (en) * | 2016-12-22 | 2018-01-09 | Texas Instruments Incorporated | Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation |
-
2016
- 2016-11-17 US US15/354,137 patent/US20180138110A1/en not_active Abandoned
-
2017
- 2017-11-10 WO PCT/US2017/061078 patent/WO2018093677A1/en not_active Ceased
- 2017-11-10 CN CN201780069263.XA patent/CN109923651A/zh active Pending
- 2017-11-10 JP JP2019526469A patent/JP7070971B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019536286A5 (https=) | ||
| KR102451649B1 (ko) | 소결-본딩 방열 구조체를 갖는 마이크로전자 모듈 및 이의 제조 방법 | |
| CN105845662B (zh) | 包括金属化层的器件和制造器件的方法 | |
| US9583251B2 (en) | Chip electronic component and board having the same | |
| US8448333B2 (en) | Method for manufacturing wiring board and method for manufacturing inkjet printhead substrate | |
| US7960834B2 (en) | Electronic element that includes multilayered bonding interface between first electrode having aluminum-containing surface and second electrode composed of metal nanoparticle sintered body | |
| Feng et al. | Cooperative bilayer of lattice-disordered nanoparticles as room-temperature sinterable nanoarchitecture for device integrations | |
| US9780017B2 (en) | Packaged device with additive substrate surface modification | |
| TWI362234B (en) | Method for forming a photoresist-laminated substrate, method for plating an insulating substrate, method for surface treating of a metal layer of a circuit board, and method for manufacturing a multi layer ceramic condenser using metal nanoparticles aero | |
| US20040245648A1 (en) | Bonding material and bonding method | |
| TWI892998B (zh) | 低溫燒結性接合用膏、低溫燒結性接合用膏製造用材料及其製造方法、以及接合結構體 | |
| JP2010177481A (ja) | 電子部材ならびに電子部品とその製造方法 | |
| JP2014509455A5 (https=) | ||
| CN109937137B (zh) | 双层纳米粒子粘着膜 | |
| JP7070971B2 (ja) | ランダムに構成されるボイドを有するナノ粒子層により高められた接着 | |
| JP2020513696A5 (https=) | ||
| CN105723506B (zh) | 使用贯通电极的多层基板的制造方法 | |
| JP2012038790A (ja) | 電子部材ならびに電子部品とその製造方法 | |
| US9053972B1 (en) | Pillar bump formed using spot-laser | |
| JP2011054907A (ja) | 貫通電極付き基板の製造方法、及び貫通電極付き基板 | |
| JP2012235163A (ja) | 電子部材ならびに電子部品とその製造方法 | |
| TW201225209A (en) | Semiconductor device and method of confining conductive bump material with solder mask patch | |
| JP6134884B2 (ja) | 電極、電極材料及び電極形成方法 | |
| US20220336341A1 (en) | Lithographically defined electrical interconnects from conductive pastes | |
| JP6357271B1 (ja) | 柱状導体構造 |