CN109923651A - 利用具有随机配置空隙的纳米粒子层的增强型粘合 - Google Patents

利用具有随机配置空隙的纳米粒子层的增强型粘合 Download PDF

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Publication number
CN109923651A
CN109923651A CN201780069263.XA CN201780069263A CN109923651A CN 109923651 A CN109923651 A CN 109923651A CN 201780069263 A CN201780069263 A CN 201780069263A CN 109923651 A CN109923651 A CN 109923651A
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China
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nanoparticle
layer
substrate
group
metal
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CN201780069263.XA
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Chinese (zh)
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B·S·库克
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Texas Instruments Inc
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Texas Instruments Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/11—Making porous workpieces or articles
    • B22F3/1121—Making porous workpieces or articles by using decomposable, meltable or sublimatable fillers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1017—Multiple heating or additional steps
    • B22F3/1021—Removal of binder or filler
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1017—Multiple heating or additional steps
    • B22F3/1021—Removal of binder or filler
    • B22F3/1025—Removal of binder or filler not by heating only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/11—Making porous workpieces or articles
    • B22F3/1103—Making porous workpieces or articles with particular physical characteristics
    • B22F3/1109—Inhomogenous pore distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
    • B22F7/004—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/042—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/415—Leadframe inner leads serving as die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H10W70/429—Bent parts being the outer leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/458—Materials of insulating layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
CN201780069263.XA 2016-11-17 2017-11-10 利用具有随机配置空隙的纳米粒子层的增强型粘合 Pending CN109923651A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/354,137 US20180138110A1 (en) 2016-11-17 2016-11-17 Enhanced Adhesion by Nanoparticle Layer Having Randomly Configured Voids
US15/354,137 2016-11-17
PCT/US2017/061078 WO2018093677A1 (en) 2016-11-17 2017-11-10 Enhanced adhesion by nanoparticle layer having randomly configured voids

Publications (1)

Publication Number Publication Date
CN109923651A true CN109923651A (zh) 2019-06-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780069263.XA Pending CN109923651A (zh) 2016-11-17 2017-11-10 利用具有随机配置空隙的纳米粒子层的增强型粘合

Country Status (4)

Country Link
US (1) US20180138110A1 (https=)
JP (1) JP7070971B2 (https=)
CN (1) CN109923651A (https=)
WO (1) WO2018093677A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817598A (zh) * 2017-11-22 2019-05-28 Tdk株式会社 半导体装置
CN115210889A (zh) * 2020-01-31 2022-10-18 松下知识产权经营株式会社 光半导体装置用封装及光半导体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9865527B1 (en) 2016-12-22 2018-01-09 Texas Instruments Incorporated Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation
US9941194B1 (en) 2017-02-21 2018-04-10 Texas Instruments Incorporated Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer
IT201900024259A1 (it) * 2019-12-17 2021-06-17 St Microelectronics Srl Dispositivo a semiconduttore e corrispondente procedimento
US20210376563A1 (en) * 2020-05-26 2021-12-02 Excelitas Canada, Inc. Semiconductor Side Emitting Laser Leadframe Package and Method of Producing Same
JP7451455B2 (ja) * 2021-03-19 2024-03-18 株式会社東芝 半導体装置
CN118752178B (zh) * 2024-06-21 2025-07-08 哈尔滨理工大学 一种快速生成全金属间化合物接头的制备方法和应用

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040161596A1 (en) * 2001-05-31 2004-08-19 Noriyuki Taoka Porous ceramic sintered body and method of producing the same, and diesel particulate filter
CN1611349A (zh) * 2003-10-28 2005-05-04 Tdk株式会社 多孔质膜及其制造方法、传感器以及传感器的制造方法
CN1938849A (zh) * 2004-03-30 2007-03-28 英特尔公司 包含纳米复合电介质累积材料和纳米复合阻焊膜的微电子封装
US20090096100A1 (en) * 2007-10-10 2009-04-16 Ryoichi Kajiwara Semiconductor apparatus, manufacturing method of semiconductor apparatus, and joint material
CN101499450A (zh) * 2008-01-28 2009-08-05 株式会社瑞萨科技 半导体装置及其制造方法
US9305869B1 (en) * 2014-12-31 2016-04-05 Texas Instruments Incorporated Packaged semiconductor device having leadframe features as pressure valves against delamination
US20160225718A1 (en) * 2015-01-29 2016-08-04 Infineon Technologies Ag Device including a metallization layer and method of manufacturing a device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4136319B2 (ja) * 2000-04-14 2008-08-20 日本碍子株式会社 ハニカム構造体及びその製造方法
JP2002231252A (ja) * 2001-01-31 2002-08-16 Sanyo Electric Co Ltd アルカリ蓄電池用焼結式基板の製造方法
CN1846835A (zh) * 2001-02-16 2006-10-18 住友钛株式会社 钛粉末烧结体
US20080106853A1 (en) * 2004-09-30 2008-05-08 Wataru Suenaga Process for Producing Porous Sintered Metal
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
US7781123B2 (en) * 2005-06-06 2010-08-24 Delphi Technologies, Inc. Method and apparatus for forming electrode interconnect contacts for a solid-oxide fuel cell stack
DE102005028704B4 (de) * 2005-06-20 2016-09-08 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten
KR100759556B1 (ko) * 2005-10-17 2007-09-18 삼성에스디아이 주식회사 음극 활물질, 그 제조 방법 및 이를 채용한 음극과 리튬전지
BRPI0806916A2 (pt) * 2007-01-19 2014-04-29 Cinv Ag Implante poroso, não degradável feito por moldagem de pó
DE102011085224A1 (de) * 2011-09-27 2013-03-28 Siemens Aktiengesellschaft Speicherelement und Verfahren zu dessen Herstellung
JP5687175B2 (ja) * 2011-11-28 2015-03-18 有限会社 ナプラ 微細空間内に機能部分を形成する方法
US9583453B2 (en) * 2012-05-30 2017-02-28 Ormet Circuits, Inc. Semiconductor packaging containing sintering die-attach material
US20140120356A1 (en) * 2012-06-18 2014-05-01 Ormet Circuits, Inc. Conductive film adhesive
WO2014129626A1 (ja) 2013-02-22 2014-08-28 古河電気工業株式会社 接続構造体、及び半導体装置
JP5975911B2 (ja) 2013-03-15 2016-08-23 ルネサスエレクトロニクス株式会社 半導体装置
CN104419848B (zh) * 2013-08-30 2016-09-28 成都易态科技有限公司 粉末烧结金属多孔体、过滤元件及改善其渗透性的方法
EP2924719A1 (en) * 2014-03-25 2015-09-30 ABB Technology AG Method of manufacturing a power semiconductor device using a temporary protective coating for metallisation
GB201413701D0 (en) * 2014-08-01 2014-09-17 Isis Innovation Process
US20180166369A1 (en) * 2016-12-14 2018-06-14 Texas Instruments Incorporated Bi-Layer Nanoparticle Adhesion Film
US9865527B1 (en) * 2016-12-22 2018-01-09 Texas Instruments Incorporated Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040161596A1 (en) * 2001-05-31 2004-08-19 Noriyuki Taoka Porous ceramic sintered body and method of producing the same, and diesel particulate filter
CN1611349A (zh) * 2003-10-28 2005-05-04 Tdk株式会社 多孔质膜及其制造方法、传感器以及传感器的制造方法
CN1938849A (zh) * 2004-03-30 2007-03-28 英特尔公司 包含纳米复合电介质累积材料和纳米复合阻焊膜的微电子封装
US20090096100A1 (en) * 2007-10-10 2009-04-16 Ryoichi Kajiwara Semiconductor apparatus, manufacturing method of semiconductor apparatus, and joint material
CN101499450A (zh) * 2008-01-28 2009-08-05 株式会社瑞萨科技 半导体装置及其制造方法
US9305869B1 (en) * 2014-12-31 2016-04-05 Texas Instruments Incorporated Packaged semiconductor device having leadframe features as pressure valves against delamination
US20160225718A1 (en) * 2015-01-29 2016-08-04 Infineon Technologies Ag Device including a metallization layer and method of manufacturing a device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817598A (zh) * 2017-11-22 2019-05-28 Tdk株式会社 半导体装置
CN109817598B (zh) * 2017-11-22 2024-01-09 Tdk株式会社 半导体装置
CN115210889A (zh) * 2020-01-31 2022-10-18 松下知识产权经营株式会社 光半导体装置用封装及光半导体装置
TWI870539B (zh) * 2020-01-31 2025-01-21 日商松下控股股份有限公司 光半導體裝置用封裝體及光半導體裝置

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WO2018093677A1 (en) 2018-05-24
JP7070971B2 (ja) 2022-05-18
JP2019536286A (ja) 2019-12-12
US20180138110A1 (en) 2018-05-17

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