CN109937137B - 双层纳米粒子粘着膜 - Google Patents

双层纳米粒子粘着膜 Download PDF

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CN109937137B
CN109937137B CN201780070261.2A CN201780070261A CN109937137B CN 109937137 B CN109937137 B CN 109937137B CN 201780070261 A CN201780070261 A CN 201780070261A CN 109937137 B CN109937137 B CN 109937137B
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nanoparticles
substrate
layer
metal
group
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CN109937137A (zh
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本杰明·史塔生·库克
林勇
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

在具有表面的第一材料的衬底(201)的所描述实例中，所述表面通过沉积双层纳米粒子膜修饰。所述膜包括在所述表面顶部上并且与所述表面接触的第二材料的纳米粒子层(400)，和在所述第二材料的所述纳米粒子层(400)顶部上并且与其接触的第三材料的纳米粒子层(500)。所述第三材料的所述纳米粒子粘着到所述第二材料的所述纳米粒子。邻接表面的衬底区包含所述第二材料在所述第一材料中的掺合物(402a)。第四材料(701)接触所述第三材料的所述纳米粒子层(500)并且与其以化学/机械方式结合。

Description

双层纳米粒子粘着膜
本发明大体上涉及半导体装置和方法，并且更具体地说，涉及双层纳米粒子粘着膜的结构和制造，所述双层纳米粒子粘着膜涂覆到封装半导体装置以便提高不同材料之间的界面的粘着力。
背景技术
半导体封装件根据其功能包括多种不同材料。采用形成为引线框和接合的金属，以便获得机械稳定性和导电性和导热性。绝缘体，如聚合模制化合物，用于囊封和形状因数。在封装制造期间，惯例是将多个半导体芯片附接到引线框的条，以将芯片与其各自的引线连接，并且随后将组装好的芯片囊封在封装件中。封装件保护被包封的部分免受机械损伤和如湿气和光的环境影响。
流行的囊封技术是传递模塑法。将具有已附接且连接的芯片的引线框条置于钢模中，所述钢模形成围绕每个组装好的芯片的腔。将半粘性热固性聚合化合物加压通过跨越引线框条的流道，以通过浇口进入每个腔。在填充腔之后，使化合物通过聚合硬化。最后，在打浇口(degating)步骤中，流道中的化合物在每个浇口处从填充腔的化合物断离。
为确保封装件的单一性和一致性，预期金属材料和非金属材料在产品寿命期间彼此粘着。失效粘着使湿气进入封装件，由漏电和化学腐蚀导致装置失效。其会进一步导致半导体芯片与衬底的附接失效、线接合断裂、焊接凸块开裂以及热能和电能耗散降级。
现今的半导体技术采用数种方法来提高多样化材料之间的粘着力，使得封装件通过加速测试和使用条件而不会分层。方法包括化学纯化模制化合物、活化引线框金属表面(如恰好在模制过程之前通过等离子体进行)和通过氧化基材金属增强引线框金属与聚合化合物的亲和力。此外，将如凹陷、凹槽或突起、悬垂物(overhang)和其它三维特征的设计特征添加到引线框表面中，以便改良与封装材料的互锁。
提高半导体封装中引线框、芯片和囊封化合物之间的粘着力的已知技术的另一实例是在从金属片冲压或蚀刻图案之后，通过化学蚀刻引线框表面使整个引线框表面粗糙化。化学蚀刻是使用蚀刻剂的消减法。化学蚀刻产生粗糙度约1μm或更小的微晶金属表面。仅使引线框的一个表面粗糙化给非粗糙化引线框增加了约10％到15％的成本。
实现粗糙表面的又一已知方法是使用专门的金属电镀浴，如镍电镀浴，以沉积粗糙金属(如镍)层。这种方法是叠加法。所产生的表面粗糙度是约1到10μm。引线框表面的粗糙化可能具有一些不受欢迎的副作用。表面的总体粗糙化对线接合产生不利影响，因为视觉系统在看到粗糙化表面方面有困难；粗糙表面缩短了毛细管寿命；并且粗糙表面上的微污染物使接合坚实度降级。一般来说，当树脂组分从芯片附接化合物块分离并且在芯片垫的表面上扩散时，粗糙表面往往会使得渗出(bleeding)较多。树脂渗出又会使湿度灵敏度降级并且干扰芯片垫上的下接合。有时采用选择性粗糙化技术，其涉及可再用硅橡胶掩模或密封垫；因此，选择性粗糙化是昂贵的。举例来说，将化学粗糙化限定在所选择的引线框区域的保护性掩模给非粗糙化引线框增加了约35％到40％的成本。
所有这些努力仅取得了有限的成功，尤其因为当实施装置小型化的另一向下缩放步骤时，粘着有效性不断降低。
发明内容
在具有表面的第一材料的衬底的所描述实例中，所述表面通过沉积双层纳米粒子膜修饰。膜包括在表面顶部上并且与其接触的第二材料的纳米粒子层，和在所述第二材料的所述纳米粒子层顶部上并且与其接触的第三材料的纳米粒子层。所述第三材料的所述纳米粒子粘着到所述第二材料的所述纳米粒子。邻接表面的衬底区包含所述第二材料在所述第一材料中的掺合物。第四材料接触所述第三材料的所述纳米粒子层并且与其以化学/机械方式结合。
附图说明
图1是概述根据一实施例，产生叠加双层纳米粒子粘着膜以便提高相异材料的物体之间的粘着力的过程流程的图。
图2示出包含在第一材料的衬底表面上形成第二材料的纳米粒子的叠层的一实施例。
图3展示根据一实施例，具有图2中喷嘴的注射器的一部分的放大，其中注射器填充有第二材料的纳米粒子在溶剂中的糊状物。
图4描绘根据一实施例，在将第二材料扩散到邻接衬底表面的衬底区的同时，烧结第二材料的纳米粒子之后的叠层。
图5示出根据一实施例，在第二材料的烧结纳米粒子层表面上形成第三材料的纳米粒子的叠层。
图6展示根据一实施例，具有图5中喷嘴的注射器的一部分的放大，其中注射器填充有第三材料的纳米粒子在溶剂中的糊状物。
图7展示根据一实施例，通过封装化合物囊封叠加双层纳米粒子粘着膜，所述封装化合物填充第三材料的叠层的任何空隙。
图8示出包含使用溶剂形成纳米粒子的叠层的另一实施例，所述溶剂包括第二材料的纳米粒子与第三材料的纳米粒子的混合物。
图9展示根据一实施例，具有图8中喷嘴的注射器的一部分的放大，其中注射器填充有包括第二材料的纳米粒子与第三材料的纳米粒子在溶剂中的混合物的糊状物。
图10描绘根据一实施例的示例封装半导体装置，其引线框的若干部分覆盖有双层纳米粒子粘着膜，增强了引线框与塑料封装件之间的粘着力。
图11示出具有不同疏水性配体分子的常规纳米粒子核，两者均按比例绘制。
具体实施方式
在一实施例中，描述了用于增强多样材料之间的粘着力和机械结合的方法。所述方法包含在材料之间形成并且锚定由两个叠加(或者，互相啮合)的纳米粒子层构成的叠加粘着膜。图1是概述一实施例的图。在其上构建叠加膜的材料在本文中被称作衬底，而需要粘着到衬底的另一种材料在本文中被称作封装件。举例来说，衬底在图2中表示为201，并且封装件在图7中表示为701。
图1所示的过程流程的应用可以应用于半导体装置的制造技术。在半导体技术中，衬底通常是金属引线框或由多个交替的电绝缘层和导电层构成的层压衬底中的任一种。在图1的过程101中，选择衬底，其由第一材料制成并且具有以二维形式延伸的表面。
当衬底是引线框(参见图10)时，这种引线框优选从如铜、铜合金、铁镍合金、铝、kovarTM和其它的基材金属薄片蚀刻或冲压而成，厚度通常在120到250μm范围内。如本文所使用，术语基材金属具有起始物质的内涵且并未暗示化学特征。一些引线框可以具有镀覆到基材金属的全部或部分表面区域上的附加金属层；实例是铜引线框上的镀镍层、镀钯层和镀金层。
引线框提供用于稳固定位半导体芯片1010的稳定支撑垫(图10中的1001)。此外，引线框提供众多导电引线1003以使各种电导体紧密接近芯片。引线的尖端与芯片端子之间的任何剩余间隙通常由接线1030桥接。或者，在倒装芯片技术中，芯片端子可以通过金属凸块与引线连接。
重要的是，引线框特征促进与附接芯片和封装化合物(图10中的1070)的可靠粘着。除模制化合物与引线框的金属面层(finish)之间的化学亲和力以外，粘着力还可能使引线框表面粗糙度成为必需，尤其考虑到为粘着提供更小表面积的封装尺寸缩小的技术趋势。此外，使用无铅焊料的要求将回焊温度范围推进到约260℃附近，使得在高温下维持模制化合物与引线框的粘着力更加困难。
参考图1的过程流程，在过程流程的步骤102期间，提供溶剂糊状物，其包含包括第二材料的纳米粒子的分散剂或溶剂。溶剂糊状物的实例在图3中所示出并且被指定为301。溶解于分散剂中的纳米粒子被称作第二材料的纳米粒子302。在本说明书中，纳米粒子包括球形簇或其它三维簇，其由原子或分子、无机化合物或有机化合物、一维线、二维晶体和二维小片以及纳米管构成。
纳米粒子302可以选自包括以下各项的群组：金属、金属氧化物、氧化物和陶瓷。金属可以包括金、银、铜、铝、锡、锌和铋。金属氧化物可以包括氧化铜(copper oxide)，其呈不同比率的氧化铜(cupric oxide)与氧化亚铜的混合物形式，已知其与铜相比，提供与模制化合物更好的化学粘着。
在图1的过程流程的步骤103期间，将包括第二材料的纳米粒子的溶剂糊状物301的层200叠加沉积于图2所示的衬底201的表面201a上。层200可以在可用的二维表面区域上延伸，或其可以仅覆盖部分表面区域，如取决于滴大小，在约0.1μm到100μm之间的岛状物。
用于沉积溶剂糊状物的设备包括具有移动注射器210的计算机控制的喷墨打印机，所述移动注射器具有喷嘴211，糊状物的离散滴310从所述喷嘴释放。自动喷墨打印机可以选自数种可商购的打印机。或者，可以将定制喷墨打印机设计成适用于特定糊状物。或者，可以使用任何叠加法，包括喷墨印刷、丝网印刷、凹版印刷、浸涂、喷涂和多种其它叠加法。
如前所述，沉积层200可以沿衬底201的横向尺寸延伸，或可以包括如图2中作为示例长度202和203所描绘，延伸约0.1μm到100μm长度的岛状物。在金属引线框中，层200可以覆盖一或多个引线的整个引线框表面区域，或如芯片附接垫的所选择的部分。由注射器210的重复行程汇集的滴积累高度，层200可以具有在约100nm与500nm之间的高度200a，但可以较薄或显著较厚。
在图1的过程流程的步骤104期间，提供能量以升高温度，以便将第二材料的纳米粒子烧结在一起，并且同时将第二材料扩散到邻接第一表面的衬底区中，由此将第二材料的烧结纳米粒子锚定到第一表面。可以由多种来源提供所需的能量：热能、光子能、电磁能和化学能。当烧结在一起时，纳米粒子302在粒子之间颈缩(necking)成液体网络结构402。液体网络结构402是图4中的形成层400。
与第二材料的纳米粒子402的烧结同时，一些第二材料通过原子相互扩散而扩散到邻接衬底201的表面201a(第一表面)的区的第一材料中。在图4中，相互扩散到接近衬底201的表面201a的区的第二材料被指定为402a。在图4中，扩散深度被指定为402b。原子相互扩散到衬底中产生相互扩散结合，其将烧结第二纳米粒子的层400锚定到衬底201中。
在烧结过程之后，使第二材料的液体网络结构402固化以产生第二材料402的固体层400。因为硬化的网络结构400在衬底表面处以固体层形式继续存在，所以第二材料的纳米粒子402是结构性纳米粒子。
在图1所示的过程流程的过程步骤105期间，提供另一溶剂糊状物，其包含包括第三材料的纳米粒子的分散剂或溶剂。溶剂糊状物的实例在图5中示出并且被指定为501。溶解于分散剂中的纳米粒子被称作第三材料的纳米粒子502。第三材料可以选自包括以下各项的群组：聚合物、氧化物、陶瓷、金属和金属氧化物。金属可以包括金、银、铜、铝、锡、锌和铋，并且金属氧化物可以包括氧化铜，其呈不同比率的氧化铜与氧化亚铜的混合物形式，已知其与铜相比，提供与模制化合物更好的化学粘着。
结合第二材料的纳米粒子的选择，选择第三材料的纳米粒子，使得其可经操作以具有与第二材料的纳米粒子的粘着力。由于存在分子间力，因此第三材料的纳米粒子依附于第二材料的纳米粒子。在相关效应中，表面张力或表面能增加引起表面粘着力和润湿增加。
当纳米粒子的表面经处理，使得经过处理的纳米粒子能够执行某些所需功能时，所述处理被称作官能化。举例来说，如果纳米粒子需要彼此分离，则其可以用配体处理(其被“官能化”)以防止凝结。在图2中所描述的实例中，将第三材料的纳米粒子的表面官能化以便提高与第二材料的纳米粒子的粘着力是有利的。图11示出纳米粒子1100，其具有理想化为5nm直径光滑球体的核1101，以及按比例绘制并且附接到核1101的表面的不同疏水性配体分子。图11中的配体分子包括分子1102(三辛基氧化膦，TOPO)、分子1104(三苯基膦，TPP)、分子1106(十二烷基硫醇，DDT)、分子1108(四辛基溴化铵，TOAB)和分子1110(油酸，OA)。
其它纳米粒子的核可以具有附接到核表面的亲水性配体分子。实例包括巯基乙酸(MAA)、巯基丙酸(MPA)、巯基十一烷酸(MUA)、巯基丁二酸(MSA)、二氢硫辛酸(DHLA)、双磺化三苯基膦(mPEG5-SH、mPEG45-SH)和序列CALNN的短肽。如附接在核表面上的惰性分子链的配体分子可以使纳米粒子稳定，以防聚集，而附接在表面上的其它配体分子可以增强与目标的粘着力。
作为一实例，为了促进氧化铜(CuO和Cu2O两者)纳米粒子的共价结合，可以将硅氧烷、硅烷分子或胺基附接到核表面以使氧化铜纳米粒子官能化。
对于一些应用，当第三材料是与第二材料相同的化学元素，但具有不同孔隙率或导致不同表面函数的不同化合物调配物时，可以实现第三材料的层与第二材料的层之间的粘着。作为一实例，第三材料可以是与第二材料相同的元素的胺基或硅烷基团的化合物，或第三材料可以属于不同氧化物调配物，如CuO对Cu2O。作为另一实例，材料密度可以不同，或孔隙大小或密度可以不同(规则对无规构形)。作为又一实例，第三材料可以具有沿晶界或晶格缺陷进入固体的不同扩散特征。
在图1所示的过程流程的步骤106期间，将包括第三材料的纳米粒子的溶剂糊状物501的层500叠加沉积于烧结第二材料的纳米粒子的层200上。图5中示出所述过程；第三材料的纳米粒子的层500的厚度是500a。层500可以在衬底201的可用的二维表面区域上延伸，或如图5中作为示例长度503和504所描绘，其可以仅覆盖如取决于溶剂糊状物的滴大小，在0.1μm与100μm之间的岛状物的表面区域的部分。
用于沉积的设备包括具有移动注射器510的计算机控制的喷墨打印机，所述移动注射器具有喷嘴511，糊状物的离散滴610从所述喷嘴不连续地释放。自动喷墨打印机可以选自数种可商购的打印机。或者，可以将定制喷墨打印机设计成适用于特定糊状物。或者，可以使用任何叠加法，包括丝网印刷、凹版印刷、柔性版印刷、浸涂、喷涂和喷墨印刷，喷墨印刷包含压电喷墨印刷、热喷墨印刷、声喷墨印刷和静电喷墨印刷。
如前所述，沉积层500可以沿整个衬底201的横向尺寸延伸，或可以如图5中所描绘，包括延伸约0.1μm到100μm长度的岛状物。在金属引线框中，层500可以覆盖一或多个引线的整个引线框表面区域，或如芯片附接垫的所选择的部分。由注射器510的重复行程汇集的滴积累高度，层500优选可以具有在约100nm与500nm之间的高度500a，但可以较薄或显著较厚。
在图1所示的过程流程的步骤107期间，提供能量以提高温度，以便将第三材料的纳米粒子烧结在一起。可以由多种来源提供所需的能量：热能、光子能、电磁能和化学能。当烧结在一起时，纳米粒子502在粒子之间颈缩成液体网络结构。在颈缩连接中，熔融粒子的表面展现类似于粒子之间的颈的收缩范围。液体网络结构是图5中的形成层500。在烧结过程之后，使第三材料的液体网络结构固化以产生第三材料的固体层500。
在第三材料的纳米粒子经烧结、固化并且粘着到第二材料的烧结纳米粒子的情况下，形成双层纳米粒子膜520。双层膜520的厚度520a优选在约0.1μm与10μm之间。
在图1所示的过程流程的步骤108期间，将固体双层纳米粒子膜520与第一材料的衬底201的至少部分一起囊封到聚合化合物的封装件中。图7中示出所述过程，其中聚合化合物表示为701。用于由聚合化合物囊封的方法是使用热固性环氧树脂基模制化合物的传递模塑技术。因为化合物在模制过程期间的高温下具有低粘度，所以聚合化合物可以容易地填充第三材料的层500的任何孔隙/空隙502a。对于任何孔隙/空隙，进行由聚合材料填充孔隙/空隙，无论其以有序图案排列或以无规分布排列，并且无论其是浅的或呈无规三维构形，包括类似于具有窄入口的球形洞。
在化合物聚合并且冷却到环境温度之后，将聚合化合物701在封装件中和孔隙/空隙中硬化。在塑料材料硬化之后，聚合填充孔隙/空隙表示纳米粒子层500中的封装件的锚，为封装件(第四材料)与双层纳米粒子膜(第三材料)的界面提供强度。此外，如上文所描述，层500具有与纳米粒子层400的粘着力，为双层膜提供强度。层400又通过金属相互扩散402a锚定在金属衬底201中，为双层膜到衬底的界面提供强度。总的结果是双层纳米粒子膜提高塑料封装件701与金属衬底201之间的粘着力。已测量到粘着力提高一个数量级。
除了主体之间的机械粘着力以外，两个不同材料之间的总粘着力还可以由化学粘着力提高。因此，可以挑选第二材料的纳米粒子和第三材料的纳米粒子来增强化学粘着力。作为一实例，氧化铜纳米粒子与聚合模制化合物的化学结合比金纳米粒子更好。
另一实施例是如图8中所描绘的纳米粒子层，其将第二材料的纳米粒子402与第三材料的纳米粒子502混合成单一均质层800。接合层800通过将衬底201到层800和封装件701到层800的两个界面处的粘着力平均化，提高衬底201与封装件701之间的粘着力。
如图8和图9中所示出，层800的制造过程类似于上文针对产生纳米粒子层400和500描述的制造过程。计算机控制的喷墨打印机与溶剂糊状物901一起使用，所述溶剂糊状物包含第二材料的纳米粒子402与第三材料的纳米粒子502的混合物。
用于通过两种纳米粒子材料的烧结半均质纳米粒子层提高两个物体之间的粘着力的方法通过提供第一材料的物体和第四材料的物体开始。随后，提供溶剂糊状物，其包括第二材料的纳米粒子与第三材料的纳米粒子的半均质混合物。第二材料的纳米粒子能够通过分子扩散到由第一材料制成的衬底的接近表面的区中，形成与第一材料的扩散结合。第三材料的纳米粒子通过与第二材料的纳米粒子的分子间力形成粘合，并且进一步由于电力形成与第四材料的物体的化学键和/或由于孔隙/空隙的填充形成与第四材料的物体的机械结合。
对于下一过程使用计算机化喷墨印刷技术，将溶剂糊状物的半均质混合物的层叠加沉积于第一材料的物体表面上。随后施加能量以升高温度，以便将第二材料和第三材料的纳米粒子烧结在一起，形成烧结纳米粒子层，并且以便同时将第二材料扩散到邻接第一材料的物体表面的区中。
接下来，使第四材料的物体与烧结纳米粒子层接触，使得实现以化学和/或机械方式结合；第四材料的物体与第三材料的纳米粒子结合。
图10示出在包括金属引线框和塑料封装件的示例半导体装置中，通过双层纳米粒子粘着膜增强的粘着力的示例实施例。此示例实施例是具有引线框的半导体装置1000，所述引线框包括用于组装半导体芯片1010的垫1001、将垫1001与封装件侧壁连接的连接杆1002和多个引线1003。在本说明书中，连接杆可以被称为绑带。芯片端子通过接线1030连接到引线1003，接线通常包括球形接合1031和针脚式接合1032。在图10的实例中，引线1003成形为悬臂引线；在其它实施例中，引线可以具有四方扁平无引线(Quad Flat No-Lead；QFN)装置中或小外形无引线(Small Outline No-Lead；SON)装置中所使用的扁平引线的形状。图10中的示例装置的绑带1002沿其纵向延伸部包括弯曲和阶状物，因为垫1001与引线1003不在同一平面内。在其它装置中，绑带1002是扁平且平面的，因为垫1001与引线1003在同一平面内。
在图10中，引线框的部分由虚线1020标记，其包括在由纳米粒子制成的双层膜中。膜可以包括无规分布的空隙和无规三维构形。因为示例装置1000包括用于囊封芯片1010和线接合1030的封装件1070，双层膜的任何空隙都由聚合化合物填充。封装件1070由如环氧树脂基热固性聚合物的聚合化合物制成，形成于模制过程中，并且通过聚合过程硬化。封装件1070的聚合化合物与引线框之间的粘着力由双层纳米粒子膜提高。其它装置可以具有较多且较大的被多孔双层纳米粒子膜覆盖的引线框区域。
在半导体技术中，示例实施例适用于具有低和高引脚数的有源半导体器件，如晶体管和集成电路，并且还适用于引线框垫片上的有源组件与无源组件的组合。
作为另一实例，示例实施例适用于硅基半导体装置，并且还适用于使用砷化镓、氮化镓、硅锗和行业中所采用的任何其它半导体材料的装置。此外，示例实施例适用于具有悬臂引线的引线框，并且适用于QFN和SON型引线框。
作为另一实例，除了引线框以外，示例实施例还适用于与非金属主体结合的层压衬底和任何其它衬底或支撑结构。
在权利要求书的范围内，对所描述实施例的修改是可能的，并且其它实施例是可能的。

Claims (26)

1.一种装置，其包含：
第一材料的衬底，所述衬底具有表面；
在所述衬底的所述表面顶部上并且与所述衬底的所述表面接触的第二材料的纳米粒子层，邻接所述衬底表面的衬底区包含所述第二材料在所述第一材料中的掺合物；
在所述第二材料的所述纳米粒子层顶部上并且与所述第二材料的所述纳米粒子层接触的第三材料的纳米粒子层，所述第三材料的所述纳米粒子粘着到所述第二材料的所述纳米粒子；和
第四材料的封装件，所述第四材料与所述第三材料的所述纳米粒子层接触并且结合，所述第四材料填充第三材料的所述层中的任何空隙。
2.根据权利要求1所述的装置，其中所述第一材料的所述衬底是包括金属区的层压衬底。
3.根据权利要求1所述的装置，其中所述第一材料的所述衬底是金属引线框上的一或多个表面。
4.根据权利要求3所述的装置，其中所述金属引线框的所述第一材料选自包括以下各项的群组：铜、铜合金、铝、铝合金、铁镍合金和镍钴铁合金。
5.根据权利要求4所述的装置，其进一步包括在所述金属引线框上的镀层，且所述镀层选自包括以下各项的群组：镍、钯、金和锡。
6.根据权利要求1所述的装置，其中所述第四材料包括聚合化合物，如环氧树脂基模制化合物。
7.根据权利要求1所述的装置，其中所述第二材料选自包括以下各项的群组：金属、金属氧化物、氧化物和陶瓷。
8.根据权利要求1所述的装置，其中所述第三材料选自包括以下各项的群组：聚合物、氧化物、陶瓷、金属和金属氧化物。
9.根据权利要求1所述的装置，其中所述第三材料的所述纳米粒子与所述第二材料的所述纳米粒子的所述粘着是基于所述纳米粒子之间的分子间力。
10.根据权利要求1所述的装置，其中所述第四材料与所述第三材料的所述纳米粒子层的所述结合是基于所述第四材料与所述第三材料的搀混。
11.根据权利要求1所述的装置，其中所述第四材料与所述第三材料的所述纳米粒子层的所述结合是基于化学结合。
12.一种用于衬底修饰的方法，其包含：
提供第一材料的衬底，所述衬底具有第一表面；
将包括第二材料的纳米粒子的溶剂糊状物的层叠加沉积到所述第一衬底上；
向所述第一溶剂糊状物施加能量以提高温度，以将所述第二材料的所述纳米粒子烧结在一起，并且同时以便将所述第二材料扩散到邻接所述第一表面的衬底区中；
将第二溶剂糊状物的层叠加沉积到所述第二材料的所述烧结纳米粒子上，所述第二溶剂糊状物包括第三材料的纳米粒子；和
向所述第二溶剂糊状物施加能量以提高温度，以使所述第三材料的所述纳米粒子固化，所述第三材料的所述固化纳米粒子粘着到所述第二材料的所述烧结纳米粒子，由此形成双层纳米粒子膜。
13.根据权利要求12所述的方法，其中所述衬底选自包括以下各项的群组：金属衬底、用于半导体装置的金属引线框，和包括与绝缘层相间的金属层的层压衬底。
14.根据权利要求12所述的方法，其中所述第一材料选自包括以下各项的群组：铜、铜合金、铝、铝合金、铁镍合金和镍钴铁合金。
15.根据权利要求14所述的方法，其进一步包括在所述第一材料上的金属的镀层，且所述金属的所述镀层选自包括以下各项的群组：锡、银、镍、钯和金。
16.根据权利要求12所述的方法，其中叠加沉积的所述方法选自包括以下各项的群组：丝网印刷、柔性版印刷、凹版印刷、浸涂、喷涂和喷墨印刷，且喷墨印刷包含压电喷墨印刷、热喷墨印刷、声喷墨印刷和静电喷墨印刷。
17.根据权利要求12所述的方法，其中所述第二材料选自包括以下各项的群组：金属、金属氧化物、氧化物和陶瓷。
18.根据权利要求12所述的方法，其中所述第三材料选自包括以下各项的群组：聚合物、氧化物、陶瓷、金属和金属氧化物。
19.根据权利要求12所述的方法，其中用于烧结所述第二纳米粒子的所述能量选自包括以下各项的群组：热能、光子能、电磁能和化学能。
20.一种用于衬底修饰的方法，其包含：
提供第一材料；
在所述第一材料的表面上叠加沉积溶剂糊状物的层，所述溶剂糊状物包含以下各项的半均质混合物：
可通过相互扩散与所述第一材料结合的第二材料的纳米粒子；和
粘粘着到所述第二材料并且可与第四材料以化学和机械方式结合的第三材料的纳米粒子；
施加能量以提高温度，以便将所述第二材料的所述纳米粒子与所述第三材料的所述纳米粒子烧结在一起，形成烧结纳米粒子层，并且同时以便将第二材料扩散到邻接所述第一材料的所述表面的区中；和
使所述第四材料与所述烧结纳米粒子层接触，由此将所述第四材料与所述第三材料的所述纳米粒子结合。
21.一种用于增强封装半导体装置的粘着力的方法，其包含：
提供第一材料的衬底，所述衬底具有第一表面；
将第一溶剂糊状物的层叠加沉积到所述第一表面上，所述第一溶剂糊状物包括第二材料的纳米粒子；
向所述第一溶剂糊状物施加能量以提高所述第一溶剂糊状物的温度，以将所述第二材料的所述纳米粒子烧结在一起，并且同时以便将所述第二材料扩散到邻接所述第一表面的衬底区中；
将第二溶剂糊状物的层叠加沉积到所述第二材料的所述烧结纳米粒子上，所述第二溶剂糊状物包括第三材料的纳米粒子；
向所述第二溶剂糊状物施加能量以提高所述第二溶剂糊状物的温度，以使所述第三材料的所述纳米粒子固化，所述第三材料的所述固化纳米粒子粘着到所述第二材料的所述烧结纳米粒子，由此形成双层纳米粒子膜；和
将所述双层纳米粒子膜和所述衬底的至少部分囊封于第四材料中，所述第四材料可与所述第三材料的所述固化纳米粒子化学结合。
22.根据权利要求21所述的方法，其中所述衬底是用于半导体装置的金属引线框，且所述第一材料选自包括以下各项的群组：铜、铜合金、铝、铝合金、铁镍合金和镍钴铁合金。
23.根据权利要求22所述的方法，其进一步包括在所述第一材料上的金属的镀层，且所述金属的所述镀层选自包括以下各项的群组：锡、银、镍、钯和金。
24.根据权利要求21所述的方法，其中所述第二材料选自包括以下各项的群组：金属、金属氧化物、氧化物和陶瓷。
25.根据权利要求21所述的方法，其中所述第三材料选自包括以下各项的群组：聚合物、氧化物、陶瓷、金属和金属氧化物。
26.根据权利要求21所述的方法，其进一步包括在所述囊封过程之前，在所述衬底上组装半导体芯片的过程，所述组装方法使得在所述囊封过程之后，所述芯片将定位在所述封装件的内部。
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