JP2019530233A - ウェハ状の基板を処理する方法、装置、および該装置の使用 - Google Patents
ウェハ状の基板を処理する方法、装置、および該装置の使用 Download PDFInfo
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- JP2019530233A JP2019530233A JP2019514773A JP2019514773A JP2019530233A JP 2019530233 A JP2019530233 A JP 2019530233A JP 2019514773 A JP2019514773 A JP 2019514773A JP 2019514773 A JP2019514773 A JP 2019514773A JP 2019530233 A JP2019530233 A JP 2019530233A
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- 239000000758 substrate Substances 0.000 title claims abstract description 298
- 238000012545 processing Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000012805 post-processing Methods 0.000 claims description 29
- 238000001465 metallisation Methods 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 11
- 238000003486 chemical etching Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 238000000866 electrolytic etching Methods 0.000 claims description 4
- 230000032258 transport Effects 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
Description
i)ローディング装置に基板を提供するステップと、
ii)非接触式グリッパまたは接触式グリッパを使用して基板をローディング装置から位置合わせ装置へと搬送するステップと、
iii)位置合わせ装置内で基板を位置合わせするステップと、
iv)位置合わせされた基板を、基板ホルダを提供する接続装置に接触式グリッパを使用して搬送するステップと、
v)位置合わせされた基板を接続装置内の基板ホルダに固定するステップと、
vi)位置合わせされた基板を有する基板ホルダをさらに、接触式グリッパを使用して処理装置へと搬送するステップと、
vii)各基板ホルダにまだ固定されている基板を、処理装置で処理するステップと、
viii)処理された基板を有する基板ホルダを接続装置に搬送し、各基板ホルダから処理された基板を取り外すステップと、
ix)処理された基板をさらに、接触式グリッパを使用して後処理装置に搬送するステップと、
x)後処理装置で基板を後処理するステップと、
xi)後処理された基板を、非接触式グリッパを使用して後処理装置から保管装置へと搬送する、または非接触式グリッパを使用してローディング装置へと戻すステップと、
を含む。
−非接触式グリッパまたは接触式グリッパが、基板をローディング装置から、基板を位置合わせすることができる位置合わせ装置へと搬送することができ、
−接触式グリッパが、位置合わせ装置から、位置合わせされた基板を基板ホルダに固定することができかつ処理された基板を基板ホルダから取り外すことができる接続装置へと、位置合わせされた基板を搬送することができ、
−接触式グリッパが、接続装置から、基板を処理することができる処理装置へと、基板ホルダを搬送することができ、かつ接続装置へと戻すことができ、
−接触式グリッパが、処理された基板を、接続装置から後処理装置へと搬送することができ、
−非接触式グリッパが、後処理された基板を後処理装置から保管装置へと搬送することができ、またはローディング装置へと戻すことができる。
i)ローディング装置に基板を提供するステップと、
ii)非接触式グリッパまたは接触式グリッパを使用して基板をローディング装置から位置合わせ装置へと搬送するステップと、
iii)位置合わせ装置内で基板を位置合わせするステップと、
iv)位置合わせされた基板を、基板ホルダを提供する接続装置に接触式グリッパを使用して搬送するステップと、
v)位置合わせされた基板を接続装置内の基板ホルダに固定するステップと、
vi)位置合わせされた基板を有する基板ホルダをさらに、接触式グリッパを使用して処理装置へと搬送するステップと、
vii)各基板ホルダにまだ固定されている基板を、処理装置で処理するステップと、
viii)処理された基板を有する基板ホルダを接続装置に搬送し、各基板ホルダから処理された基板を取り外すステップと、
ix)処理された基板をさらに、接触式グリッパを使用して後処理装置に搬送するステップと、
x)後処理装置で基板を後処理するステップと、
xi)後処理された基板を、非接触式グリッパを使用して後処理装置から保管装置へと搬送する、または非接触式グリッパを使用してローディング装置へと戻すステップと、
を含む。
−非接触式グリッパまたは接触式グリッパが、基板をローディング装置から、基板を位置合わせすることができる位置合わせ装置へと搬送することができ、
−接触式グリッパが、位置合わせ装置から、位置合わせされた基板を基板ホルダに固定することができかつ処理された基板を基板ホルダから取り外すことができる接続装置へと、位置合わせされた基板を搬送することができ、
−接触式グリッパが、接続装置から、基板を処理することができる処理装置へと、基板ホルダを搬送することができ、かつ接続装置へと戻すことができ、
−接触式グリッパが、処理された基板を、接続装置から後処理装置へと搬送することができ、
−非接触式グリッパが、後処理された基板を後処理装置から保管装置へと搬送することができ、またはローディング装置へと戻すことができる。
2 位置合わせ装置
3 非接触式グリッパ
4 接触式グリッパ
5 接続装置
6 後処理装置
7 ロボットアーム
8 制限縁
9 ノズル
10 ローディング装置を導入する開口のカバー
Claims (15)
- ウェハ状の基板を処理する方法であって、以下のステップ、すなわち、
i)ローディング装置(1)に基板を提供するステップと、
ii)非接触式グリッパ(3)または接触式グリッパ(4)を使用して前記基板を前記ローディング装置(1)から位置合わせ装置(2)へと搬送するステップと、
iii)前記位置合わせ装置(2)内で前記基板を位置合わせするステップと、
iv)位置合わせされた前記基板を、基板ホルダを提供する接続装置(5)に接触式グリッパ(4)を使用して搬送するステップと、
v)位置合わせされた前記基板を前記接続装置(5)内の前記基板ホルダに固定するステップと、
vi)位置合わせされた前記基板を有する前記基板ホルダをさらに、接触式グリッパを使用して処理装置へと搬送するステップと、
vii)前記各基板ホルダにまだ固定されている前記基板を、前記処理装置で処理するステップと、
viii)処理された前記基板を有する前記基板ホルダを前記接続装置(5)に搬送し、前記各基板ホルダから処理された前記基板を取り外すステップと、
ix)処理された前記基板をさらに、接触式グリッパ(4)を使用して後処理装置(6)に搬送するステップと、
x)前記後処理装置(6)で前記基板を後処理するステップと、
xi)後処理された前記基板を、非接触式グリッパ(3)を使用して前記後処理装置(6)から保管装置へと搬送する、または非接触式グリッパ(3)を使用して前記ローディング装置(1)へと戻すステップと、
を含む、ウェハ状の基板を処理する方法。 - 前記基板を、湿式処理用の前記処理装置で処理し、前記湿式処理は好適には、
a)化学金属析出または電解金属析出、
b)化学エッチングまたは電解エッチング、および/または
c)化学クリーニングまたは電解クリーニングであり、
より好適には、電解金属析出、化学エッチング、および/または化学クリーニングである、請求項1記載の基板を処理する方法。 - 前記接触式グリッパ(4)は真空吸込を利用するグリッパであり、前記非接触式グリッパ(3)はベルヌーイ式グリッパである、請求項1または2記載の基板を処理する方法。
- 前記基板の前記位置合わせにより、前記処理装置における後続の処理のために正確に位置合わせされた基板が生じる、請求項1から3までのいずれか1項記載の基板を処理する方法。
- 前記基板は、少なくとも1つの処理すべき面を有しており、前記接触式グリッパ(4)または前記非接触式グリッパ(3)は、搬送中、前記基板を前記処理すべき面で保持することができる、請求項1から4までのいずれか1項記載の基板を処理する方法。
- ロボットアームを使用し、前記ロボットアーム(7)には、ステップii)、iv)、ix)およびxi)における前記接触式グリッパ(4)および前記非接触式グリッパ(3)が可逆的に取り付けられている、請求項1から5までのいずれか1項記載の基板を処理する方法。
- ステップvii)の前記基板の前記処理は、前記基板の2つの面の処理である、請求項1から6までのいずれか1項記載の基板を処理する方法。
- 前記後処理は前記基板の乾燥を含む、請求項1から7までのいずれか1項記載の基板を処理する方法。
- 前記基板は、フレーム状の構造を提供するウェハである、請求項1から8までのいずれか1項記載の基板を処理する方法。
- 前記ローディング装置(1)は、少なくとも1つの基板を保管することができるカセットを有している、請求項1から9までのいずれか1項記載の基板を処理する方法。
- ステップiv)およびix)で使用される前記接触式グリッパは二面グリッパであって、該二面グリッパの各面で基板を搬送することができる、請求項1から10までのいずれか1項記載の基板を処理する方法。
- ウェハ状の基板を処理する装置であって、ローディング装置(1)と、位置合わせ装置と、接続装置(5)と、処理装置と、後処理装置(6)と、保管装置と、接触式グリッパ(4)と、非接触式グリッパと、を備え、前記両グリッパは、以下のように前記基板を搬送することができる、すなわち、
非接触式グリッパ(3)または接触式グリッパ(4)が、前記基板を前記ローディング装置(1)から、前記基板を位置合わせすることができる前記位置合わせ装置(2)へと搬送することができ、
接触式グリッパ(4)が、前記位置合わせ装置(2)から、位置合わせされた前記基板を基板ホルダに固定することができかつ処理された基板を基板ホルダから取り外すことができる前記接続装置(5)へと、位置合わせされた基板を搬送することができ、
接触式グリッパ(4)が、前記接続装置(5)から、前記基板を処理することができる前記処理装置へと、前記基板ホルダを搬送することができ、かつ前記接続装置(5)へと戻すことができ、
接触式グリッパ(4)が、処理された前記基板を、前記接続装置(5)から、前記後処理装置(6)へと搬送することができ、
非接触式グリッパ(3)が、後処理された前記基板を前記後処理装置(6)から前記保管装置へと搬送することができ、または前記ローディング装置(1)へと戻すことができる、
ウェハ状の基板を処理する装置。 - 前記処理装置は湿式処理のためのものであって、前記湿式処理は好適には、
a)化学金属析出または電解金属析出、
b)化学エッチングまたは電解エッチング、および/または
c)化学クリーニングまたは電解クリーニングであり、
より好適には、電解金属析出、化学エッチング、および/または化学クリーニングである、請求項12記載の基板を処理する装置。 - 前記基板は、少なくとも1つの処理すべき面を有しており、前記接触式グリッパ(4)または前記非接触式グリッパ(3)は、搬送中、前記基板を前記処理すべき面で保持することができる、請求項12または13記載の基板を処理する装置。
- ウェハ状の基板を処理するための請求項1から11までのいずれか1項記載の方法、または請求項12から14までのいずれか1項記載の装置の使用であって、前記ウェハ状の基板は、フレーム状の構造を提供するウェハである、使用。
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