JP2019530229A5 - - Google Patents
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- Publication number
- JP2019530229A5 JP2019530229A5 JP2019514071A JP2019514071A JP2019530229A5 JP 2019530229 A5 JP2019530229 A5 JP 2019530229A5 JP 2019514071 A JP2019514071 A JP 2019514071A JP 2019514071 A JP2019514071 A JP 2019514071A JP 2019530229 A5 JP2019530229 A5 JP 2019530229A5
- Authority
- JP
- Japan
- Prior art keywords
- fin
- sidewall spacer
- forming
- fins
- mandrel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 125000006850 spacer group Chemical group 0.000 claims 24
- 238000000034 method Methods 0.000 claims 18
- 238000000151 deposition Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/271,043 US10559501B2 (en) | 2016-09-20 | 2016-09-20 | Self-aligned quadruple patterning process for Fin pitch below 20nm |
| US15/271,043 | 2016-09-20 | ||
| PCT/US2017/045966 WO2018057141A1 (en) | 2016-09-20 | 2017-08-08 | Novel self-aligned quadruple patterning process for fin pitch below 20nm |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019530229A JP2019530229A (ja) | 2019-10-17 |
| JP2019530229A5 true JP2019530229A5 (https=) | 2020-08-27 |
Family
ID=59631887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019514071A Pending JP2019530229A (ja) | 2016-09-20 | 2017-08-08 | ２０ｎｍ未満のフィンピッチのための新規の自己整合４重パターニングプロセス |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10559501B2 (https=) |
| EP (1) | EP3516695A1 (https=) |
| JP (1) | JP2019530229A (https=) |
| KR (1) | KR20190046879A (https=) |
| CN (1) | CN109716528A (https=) |
| BR (1) | BR112019005093A2 (https=) |
| WO (1) | WO2018057141A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10763118B2 (en) | 2018-07-11 | 2020-09-01 | International Business Machines Corporation | Cyclic selective deposition for tight pitch patterning |
| KR102760190B1 (ko) | 2019-05-16 | 2025-01-23 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US11257681B2 (en) | 2019-07-17 | 2022-02-22 | International Business Machines Corporation | Using a same mask for direct print and self-aligned double patterning of nanosheets |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762448B1 (en) * | 2003-04-03 | 2004-07-13 | Advanced Micro Devices, Inc. | FinFET device with multiple fin structures |
| US7638381B2 (en) * | 2005-10-07 | 2009-12-29 | International Business Machines Corporation | Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby |
| US8669186B2 (en) | 2012-01-26 | 2014-03-11 | Globalfoundries Inc. | Methods of forming SRAM devices using sidewall image transfer techniques |
| KR101823105B1 (ko) * | 2012-03-19 | 2018-01-30 | 삼성전자주식회사 | 전계 효과 트랜지스터의 형성 방법 |
| US8492228B1 (en) * | 2012-07-12 | 2013-07-23 | International Business Machines Corporation | Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers |
| US9093556B2 (en) | 2012-08-21 | 2015-07-28 | Stmicroelectronics, Inc. | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods |
| WO2014088918A1 (en) * | 2012-12-03 | 2014-06-12 | Applied Materials, Inc | Semiconductor device processing tools and methods for patterning substrates |
| US9123654B2 (en) | 2013-02-15 | 2015-09-01 | International Business Machines Corporation | Trilayer SIT process with transfer layer for FINFET patterning |
| US9040371B2 (en) | 2013-08-07 | 2015-05-26 | International Business Machines Corporation | Integration of dense and variable pitch fin structures |
| CN104347421A (zh) * | 2013-08-07 | 2015-02-11 | 中芯国际集成电路制造(北京)有限公司 | 鳍式场效应管的形成方法 |
| WO2015025441A1 (ja) * | 2013-08-23 | 2015-02-26 | パナソニック株式会社 | 半導体集積回路装置 |
| US9171764B2 (en) * | 2013-12-13 | 2015-10-27 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits using self-aligned quadruple patterning |
| US9391141B2 (en) | 2014-02-24 | 2016-07-12 | Imec Vzw | Method for producing fin structures of a semiconductor device in a substrate |
| JP6227466B2 (ja) * | 2014-04-14 | 2017-11-08 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置および検査装置 |
| US9209038B2 (en) | 2014-05-02 | 2015-12-08 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits using self-aligned quadruple patterning |
| US20150372107A1 (en) | 2014-06-18 | 2015-12-24 | Stmicroelectronics, Inc. | Semiconductor devices having fins, and methods of forming semiconductor devices having fins |
| TWI540650B (zh) | 2014-08-06 | 2016-07-01 | 聯華電子股份有限公司 | 鰭狀場效電晶體元件製造方法 |
| US9209279B1 (en) | 2014-09-12 | 2015-12-08 | Applied Materials, Inc. | Self aligned replacement fin formation |
| US9530701B2 (en) | 2014-12-18 | 2016-12-27 | International Business Machines Corporation | Method of forming semiconductor fins on SOI substrate |
| US9472414B2 (en) * | 2015-02-13 | 2016-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned multiple spacer patterning process |
| JP6502705B2 (ja) * | 2015-03-03 | 2019-04-17 | キヤノン株式会社 | 形成方法 |
| US9287135B1 (en) | 2015-05-26 | 2016-03-15 | International Business Machines Corporation | Sidewall image transfer process for fin patterning |
| US9640633B1 (en) * | 2015-12-18 | 2017-05-02 | International Business Machines Corporation | Self aligned gate shape preventing void formation |
| US9793271B1 (en) * | 2016-04-29 | 2017-10-17 | International Business Machines Corporation | Semiconductor device with different fin pitches |
| US9806155B1 (en) * | 2016-05-05 | 2017-10-31 | International Business Machines Corporation | Split fin field effect transistor enabling back bias on fin type field effect transistors |
-
2016
- 2016-09-20 US US15/271,043 patent/US10559501B2/en active Active
-
2017
- 2017-08-08 EP EP17752551.6A patent/EP3516695A1/en not_active Withdrawn
- 2017-08-08 WO PCT/US2017/045966 patent/WO2018057141A1/en not_active Ceased
- 2017-08-08 CN CN201780057284.XA patent/CN109716528A/zh active Pending
- 2017-08-08 KR KR1020197007671A patent/KR20190046879A/ko not_active Ceased
- 2017-08-08 BR BR112019005093-0A patent/BR112019005093A2/pt not_active Application Discontinuation
- 2017-08-08 JP JP2019514071A patent/JP2019530229A/ja active Pending
-
2020
- 2020-01-24 US US16/752,157 patent/US20200161189A1/en not_active Abandoned
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