JP2019525457A - 電荷平衡jbsダイオードのための活性領域設計 - Google Patents
電荷平衡jbsダイオードのための活性領域設計 Download PDFInfo
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- 238000013461 design Methods 0.000 title description 25
- 238000002513 implantation Methods 0.000 claims abstract description 115
- 239000007943 implant Substances 0.000 claims abstract description 56
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000002019 doping agent Substances 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000012886 linear function Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 208
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 207
- 229910010271 silicon carbide Inorganic materials 0.000 description 205
- 238000010586 diagram Methods 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- KMTYGNUPYSXKGJ-UHFFFAOYSA-N [Si+4].[Si+4].[Ni++] Chemical compound [Si+4].[Si+4].[Ni++] KMTYGNUPYSXKGJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
10 SiC CBダイオード
12 SiC基板層
14 SiC CB層
14A 第1のSiC CB層
14B 第2のSiC CB層
16 上部SiCエピタキシャル層
18 ショットキーコンタクト
22 上部コンタクト
24 下部コンタクト
26 埋め込み領域
28 残りの部分
30 厚さ
30A 厚さ
30B 厚さ
32 厚さ
34 厚さ
36 幅
38 間隔
50A 第1のSiCエピタキシャル層
50B 第2のSiCエピタキシャル層
80 活性領域
82 SiC CBダイオード
84 JBS注入領域
86 残りの部分
88 厚さ
90 幅
92 間隔
100 活性領域
102 SiC CBダイオード
104 第1のドープ領域
106 第2のドープ領域
110 厚さ
112 幅
114 間隔
116 厚さ
118 幅
120 間隔
130 活性領域
132 SiC CBダイオード
136 トレンチ
138 深さ
140 幅
142 間隔
144 上面
146 上面
150 活性領域
152 SiC CBダイオード
154 第1のJBS注入領域
156 第1の埋め込み領域
158 軸
160 軸
162 第2のJBS注入領域
164 第3のJBS注入領域
166 第2の埋め込み領域
168 軸
170 軸
172 注入セグメント
174 長さ
176 間隔
180 活性領域
182 SiC CBダイオード
184 第1のJBS注入領域
186 軸
188 軸
190 第1の埋め込み領域
192 角度
Claims (25)
- 電荷平衡(CB)ダイオード(10)であって、前記電荷平衡(CB)ダイオード(10)は、
活性領域(8)であって、
1つまたは複数の電荷平衡(CB)層(14)を含み、各CB層(14)は、
第1の導電型を有するエピタキシャル層(50A,50B)と、
前記エピタキシャル層(50A,50B)に注入された第2の導電型を有する複数の埋め込み領域(26)と、を含み、逆バイアスが前記CBダイオード(10)に印加された場合に、前記複数の埋込み領域および前記エピタキシャル層(50A,50B)は両方とも実質的に空乏化して、イオン化ドーパントから実質的に等しい量の電荷を提供するように構成される、1つまたは複数の電荷平衡(CB)層と、
前記第1の導電型を有する上部エピタキシャル層(16)であって、前記1つまたは複数のCB層(14)のうちの最上部のCB層(14)に隣接して配置され、前記第2の導電型を有する複数の接合障壁ショットキー(JBS)注入領域(84)を含む、上部エピタキシャル層(16)と、を含む活性領域(8)と、
ショットキー接合を形成するために前記上部エピタキシャル層(16)に隣接して配置されたショットキーコンタクト(18)であって、金属またはポリシリコンから形成され、前記複数のJBS注入領域(84)に隣接して配置されたショットキーコンタクト(18)と、
を含む電荷平衡(CB)ダイオード(10)。 - 前記ショットキーコンタクト(18)は、チタンまたはニッケルから形成される、請求項1に記載のCBダイオード(10)。
- 前記ショットキーコンタクト(18)は、前記第1の導電型を有するポリシリコンから形成される、請求項1に記載のCBダイオード(10)。
- 前記CBダイオード(10)は、接合障壁ショットキー(JBS)ダイオード(10)または併合PiNショットキー(MPS)ダイオード(10)を含む、請求項1に記載のCBダイオード(10)。
- 前記複数のJBS注入領域(84)のシートドーピング濃度は、約1x1013cm−2〜約2x1016cm−2である、請求項1に記載のCBダイオード(10)。
- 隣接するJBS注入領域(84)間の間隔は、約1μm〜約10μmである、請求項1に記載のCBダイオード(10)。
- 前記間隔は、約2μm〜約5μmである、請求項6に記載のCBダイオード(10)。
- 前記複数のJBS注入領域(84)のうちの少なくとも1つのJBS注入領域(84)は、前記複数の埋め込み領域(26)と位置合わせされていない、請求項1に記載のCBダイオード(10)。
- 前記複数のJBS注入領域(84)のうちの少なくとも1つのJBS注入領域(84)は第1の形状を有し、前記複数の埋め込み領域(26)のうちの少なくとも1つの埋め込み領域(26)は前記第1の形状とは異なる第2の形状を有する、請求項1に記載のCBダイオード(10)。
- 前記複数のJBS注入領域(84)のうちの少なくとも1つのJBS注入領域(84)の軸は、前記複数の埋め込み領域(26)のうちの少なくとも1つの埋め込み領域(26)の軸と平行ではない、請求項1に記載のCBダイオード(10)。
- 前記複数のJBS注入領域(84)の各JBS注入領域(84)は、可変ドーピングプロファイルを含む、請求項1に記載のCBダイオード(10)。
- 前記可変ドーピングプロファイルは、シートドーピングの一次関数、階段関数、単調関数、または正規分布を含む、請求項11に記載のCBダイオード(10)。
- 前記上部エピタキシャル層(16)は複数のトレンチ(136)を含み、前記複数のトレンチ(136)の各トレンチ(136)は、前記上部エピタキシャル層(16)の上面から前記複数のJBS注入領域(84)のうちの1つのJBS注入領域(84)の上面まで延在し、前記ショットキーコンタクト(18)は、前記複数のトレンチ(136)内に延在し、前記複数のJBS注入領域(84)のうちの各JBS注入領域(84)の前記上面に隣接して配置される、請求項1に記載のCBダイオード(10)。
- 前記複数のトレンチ(136)のうちの少なくとも1つのトレンチ(136)の深さは、約0.1μm〜約5μmである、請求項13に記載のCBダイオード(10)。
- 前記複数のトレンチ(136)のうちの少なくとも1つのトレンチ(136)は、前記複数の埋め込み領域(26)と位置合わせされていない、請求項13に記載のCBダイオード(10)。
- 電荷平衡(CB)ダイオード(10)であって、前記電荷平衡(CB)ダイオード(10)は、
1つまたは複数の電荷平衡(CB)層(14)を含み、各CB層(14)は、
第1の導電型を有するエピタキシャル層(50A,50B)と、
前記エピタキシャル層(50A,50B)に注入された第2の導電型を有する複数の埋め込み領域(26)であって、前記複数の埋め込み領域(26)のうちの各埋め込み領域(26)の厚さは、前記エピタキシャル層(50A,50B)の厚さよりも小さい、複数の埋め込み領域(26)と、を含む1つまたは複数の電荷平衡(CB)層と、
前記第1の導電型を有し、前記1つまたは複数のCB層(14)の上部に配置された上部エピタキシャル層(16)であって、前記第2の導電型を有する複数の接合障壁ショットキー(JBS)注入領域(84)を含み、前記複数のJBS注入領域(84)のうちの各JBS注入領域(84)の厚さは、前記上部エピタキシャル層(16)の厚さよりも小さい、上部エピタキシャル層(16)と、
上部エピタキシャル層(16)の上部に配置されたショットキーコンタクト(18)であって、前記複数のJBS注入領域(84)に隣接して配置されたショットキーコンタクト(18)と、
を含む電荷平衡(CB)ダイオード(10)。 - 前記ショットキーコンタクト(18)は、前記第1の導電型を有するチタン、ニッケル、またはポリシリコンから形成される、請求項16に記載のCBダイオード(10)。
- 前記複数の埋め込み領域(26)の有効シートドーピング濃度は1.1x1013cm−2以下であり、前記複数のJBS注入領域(84)のシートドーピング濃度は約1x1013cm−2〜約2x1016cm−2である、請求項16に記載のCBダイオード(10)。
- 前記複数の注入領域(84)の隣接するJBS注入領域(84)間の間隔は、約1μm〜約5μmである、請求項16に記載のCBダイオード(10)。
- 前記複数の注入領域(84)の各JBS注入領域(84)は、各JBS注入領域(84)のドーパント濃度が前記それぞれのJBS注入領域(84)の深さに向かって増加するように、可変ドーピングプロファイルを含む、請求項16に記載のCBダイオード(10)。
- 前記上部エピタキシャル層(16)は、前記上部エピタキシャル層(16)の上面に形成された複数のトレンチ(136)を含み、前記ショットキーコンタクト(18)は、前記上部エピタキシャル層(16)の前記上面に隣接して配置され、前記複数の注入領域(84)の各JBS注入領域(84)の上面に接触するように前記複数のトレンチ(136)の各トレンチ(136)内に延在し、前記複数のトレンチ(136)のうちの少なくとも1つのトレンチ(136)の深さは、約0.3μm〜約2μmである、請求項16に記載のCBダイオード(10)。
- 電荷平衡(CB)ダイオード(10)を製造する方法であって、
基板層の上部に第1の導電型を有する第1のエピタキシャル層(50A,50B)を形成するステップと、
第1の電荷平衡(CB)層を形成するために、前記第1のエピタキシャル層(50A,50B)内に第2の導電型を有する第1の複数の埋め込み領域(26)を注入するステップと、
前記第1のCB層(14)の上に前記第1の導電型を有する上部エピタキシャル層(16)を形成するステップと、
前記上部エピタキシャル層(16)内に前記第2の導電型を有する複数の接合障壁ショットキー(JBS)注入領域(84)を注入するステップであって、複数のJBS注入領域(84)のシートドーピング濃度は、約1x1013cm−2〜約2x1016cm−2である、ステップと、
前記上部エピタキシャル層(16)および前記複数のJBS注入領域(84)の上部に隣接してショットキーコンタクト(18)を堆積させるステップと
を含む方法。 - 前記上部エピタキシャル層(16)を形成する前に、第2のCB層(14)を形成するために、前記第1のエピタキシャル層(50A,50B)の上部に前記第1の導電型を有する第2のエピタキシャル層(50A,50B)を形成し、前記第2のエピタキシャル層(50A,50B)内に前記第2の導電型を有する第2の複数の埋め込み領域(26)を注入するステップを含む、請求項22に記載の方法。
- 前記複数のJBS注入領域(84)が前記上部エピタキシャル層(16)内に注入される前に、前記上部エピタキシャル層(16)内に複数のトレンチ(136)をエッチングするステップを含み、前記複数のJBS注入領域(84)を注入するステップは、前記複数のトレンチ(136)のうちの1つのトレンチ(136)の下の前記上部エピタキシャル層(16)に前記複数の注入領域(84)の各注入領域(84)を注入するステップを含む、請求項22に記載の方法。
- 前記複数のJBS注入領域(84)の各JBS注入領域(84)を注入するステップは、各JBS注入領域(84)に対して2回以上の注入ドーズを使用するステップを含む、請求項22に記載の方法。
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