JP2019516992A5 - - Google Patents
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- Publication number
- JP2019516992A5 JP2019516992A5 JP2018560621A JP2018560621A JP2019516992A5 JP 2019516992 A5 JP2019516992 A5 JP 2019516992A5 JP 2018560621 A JP2018560621 A JP 2018560621A JP 2018560621 A JP2018560621 A JP 2018560621A JP 2019516992 A5 JP2019516992 A5 JP 2019516992A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- sensing
- analyzer according
- isfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 12
- 238000001139 pH measurement Methods 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000004458 analytical method Methods 0.000 claims 1
- 238000003752 polymerase chain reaction Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- AOSZTAHDEDLTLQ-AZKQZHLXSA-N (1S,2S,4R,8S,9S,11S,12R,13S,19S)-6-[(3-chlorophenyl)methyl]-12,19-difluoro-11-hydroxy-8-(2-hydroxyacetyl)-9,13-dimethyl-6-azapentacyclo[10.8.0.02,9.04,8.013,18]icosa-14,17-dien-16-one Chemical compound C([C@@H]1C[C@H]2[C@H]3[C@]([C@]4(C=CC(=O)C=C4[C@@H](F)C3)C)(F)[C@@H](O)C[C@@]2([C@@]1(C1)C(=O)CO)C)N1CC1=CC=CC(Cl)=C1 AOSZTAHDEDLTLQ-AZKQZHLXSA-N 0.000 description 3
- 229940126657 Compound 17 Drugs 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003556 assay Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1608758.7 | 2016-05-18 | ||
| GBGB1608758.7A GB201608758D0 (en) | 2016-05-18 | 2016-05-18 | Improvements in or relating to packaging for integrated circuits |
| PCT/GB2017/051352 WO2017199009A1 (en) | 2016-05-18 | 2017-05-15 | Improvements in or relating to packaging for integrated circuits |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019516992A JP2019516992A (ja) | 2019-06-20 |
| JP2019516992A5 true JP2019516992A5 (enExample) | 2021-04-08 |
| JP6870003B2 JP6870003B2 (ja) | 2021-05-12 |
Family
ID=56320613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018560621A Active JP6870003B2 (ja) | 2016-05-18 | 2017-05-15 | 集積回路のためのパッケージングにおける又は関連する改善 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10634642B2 (enExample) |
| EP (1) | EP3458851A1 (enExample) |
| JP (1) | JP6870003B2 (enExample) |
| CN (1) | CN109416340B (enExample) |
| CA (1) | CA3022281A1 (enExample) |
| GB (1) | GB201608758D0 (enExample) |
| WO (1) | WO2017199009A1 (enExample) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676042A (en) * | 1979-11-28 | 1981-06-23 | Shindengen Electric Mfg Co Ltd | Field effect transistor for ion sensor |
| GB2096825A (en) | 1981-04-09 | 1982-10-20 | Sibbald Alastair | Chemical sensitive semiconductor field effect transducer |
| JPS6056247A (ja) * | 1983-09-07 | 1985-04-01 | Mitsubishi Electric Corp | 半導体イオンセンサの絶縁法 |
| JPS6073352A (ja) * | 1983-09-30 | 1985-04-25 | Hitachi Ltd | 化学ｆｅｔセンサ |
| JP2988020B2 (ja) * | 1991-07-03 | 1999-12-06 | 日本電気株式会社 | 半導体イオンセンサ |
| JP4450031B2 (ja) * | 2007-08-22 | 2010-04-14 | 株式会社デンソー | 半導体部品 |
| US7759135B2 (en) * | 2008-09-30 | 2010-07-20 | Infineon Technologies Ag | Method of forming a sensor node module |
| DE102009002060B4 (de) * | 2009-03-31 | 2023-08-03 | Endress+Hauser Conducta Gmbh+Co. Kg | Ionensensitiver Sensor mit Mehrfachschichtaufbau im sensitiven Bereich sowie Verfahren zur Herstellung eines solchen Sensors |
| FR2991053B1 (fr) * | 2012-05-25 | 2014-06-06 | Hemodia | Capteur isfet avec dispositif de controle integre. |
| EP2677307B1 (en) * | 2012-06-21 | 2016-05-11 | Nxp B.V. | Integrated circuit with sensors and manufacturing method |
| GB2508582A (en) * | 2012-10-12 | 2014-06-11 | Dna Electronics Ltd | ISFET with Titanium Nitride layer |
| US9395326B2 (en) * | 2013-11-01 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company Limited | FET sensing cell and method of improving sensitivity of the same |
| TWI600901B (zh) * | 2015-09-14 | 2017-10-01 | 友達光電股份有限公司 | 離子感測場效電晶體 |
| US9470652B1 (en) * | 2015-09-15 | 2016-10-18 | Freescale Semiconductor, Inc. | Sensing field effect transistor devices and method of their manufacture |
-
2016
- 2016-05-18 GB GBGB1608758.7A patent/GB201608758D0/en not_active Ceased
-
2017
- 2017-05-15 WO PCT/GB2017/051352 patent/WO2017199009A1/en not_active Ceased
- 2017-05-15 CA CA3022281A patent/CA3022281A1/en not_active Abandoned
- 2017-05-15 US US16/302,359 patent/US10634642B2/en active Active
- 2017-05-15 CN CN201780026589.4A patent/CN109416340B/zh active Active
- 2017-05-15 JP JP2018560621A patent/JP6870003B2/ja active Active
- 2017-05-15 EP EP17724429.0A patent/EP3458851A1/en not_active Withdrawn
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