CN109416340B - 集成电路封装的改进或与之相关的改进 - Google Patents

集成电路封装的改进或与之相关的改进 Download PDF

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Publication number
CN109416340B
CN109416340B CN201780026589.4A CN201780026589A CN109416340B CN 109416340 B CN109416340 B CN 109416340B CN 201780026589 A CN201780026589 A CN 201780026589A CN 109416340 B CN109416340 B CN 109416340B
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layer
assay device
sensing
sensing layer
membrane
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CN201780026589.4A
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Chinese (zh)
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CN109416340A (zh
Inventor
扎希德·安萨里
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DNAE Group Holdings Ltd
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DNAE Group Holdings Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Micromachines (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
  • Semiconductor Memories (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
CN201780026589.4A 2016-05-18 2017-05-15 集成电路封装的改进或与之相关的改进 Active CN109416340B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1608758.7 2016-05-18
GBGB1608758.7A GB201608758D0 (en) 2016-05-18 2016-05-18 Improvements in or relating to packaging for integrated circuits
PCT/GB2017/051352 WO2017199009A1 (en) 2016-05-18 2017-05-15 Improvements in or relating to packaging for integrated circuits

Publications (2)

Publication Number Publication Date
CN109416340A CN109416340A (zh) 2019-03-01
CN109416340B true CN109416340B (zh) 2021-08-27

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CN201780026589.4A Active CN109416340B (zh) 2016-05-18 2017-05-15 集成电路封装的改进或与之相关的改进

Country Status (7)

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US (1) US10634642B2 (enExample)
EP (1) EP3458851A1 (enExample)
JP (1) JP6870003B2 (enExample)
CN (1) CN109416340B (enExample)
CA (1) CA3022281A1 (enExample)
GB (1) GB201608758D0 (enExample)
WO (1) WO2017199009A1 (enExample)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103512940A (zh) * 2012-06-21 2014-01-15 Nxp股份有限公司 具有传感器的集成电路和制造方法
WO2014057289A1 (en) * 2012-10-12 2014-04-17 Dna Electronics Ltd Ion-sensitive field-effect transistor
CN104380096A (zh) * 2012-05-25 2015-02-25 赫摩迪尔公司 具有集成控制装置的isfet传感器
CN104614430A (zh) * 2013-11-01 2015-05-13 台湾积体电路制造股份有限公司 Fet感测单元及提高其灵敏度的方法
CN105261640A (zh) * 2015-09-14 2016-01-20 友达光电股份有限公司 离子感测场效晶体管

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676042A (en) * 1979-11-28 1981-06-23 Shindengen Electric Mfg Co Ltd Field effect transistor for ion sensor
GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
JPS6056247A (ja) * 1983-09-07 1985-04-01 Mitsubishi Electric Corp 半導体イオンセンサの絶縁法
JPS6073352A (ja) * 1983-09-30 1985-04-25 Hitachi Ltd 化学ｆｅｔセンサ
JP2988020B2 (ja) * 1991-07-03 1999-12-06 日本電気株式会社 半導体イオンセンサ
JP4450031B2 (ja) * 2007-08-22 2010-04-14 株式会社デンソー 半導体部品
US7759135B2 (en) * 2008-09-30 2010-07-20 Infineon Technologies Ag Method of forming a sensor node module
DE102009002060B4 (de) 2009-03-31 2023-08-03 Endress+Hauser Conducta Gmbh+Co. Kg Ionensensitiver Sensor mit Mehrfachschichtaufbau im sensitiven Bereich sowie Verfahren zur Herstellung eines solchen Sensors
US9470652B1 (en) * 2015-09-15 2016-10-18 Freescale Semiconductor, Inc. Sensing field effect transistor devices and method of their manufacture

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104380096A (zh) * 2012-05-25 2015-02-25 赫摩迪尔公司 具有集成控制装置的isfet传感器
CN103512940A (zh) * 2012-06-21 2014-01-15 Nxp股份有限公司 具有传感器的集成电路和制造方法
WO2014057289A1 (en) * 2012-10-12 2014-04-17 Dna Electronics Ltd Ion-sensitive field-effect transistor
CN104614430A (zh) * 2013-11-01 2015-05-13 台湾积体电路制造股份有限公司 Fet感测单元及提高其灵敏度的方法
CN105261640A (zh) * 2015-09-14 2016-01-20 友达光电股份有限公司 离子感测场效晶体管

Also Published As

Publication number Publication date
GB201608758D0 (en) 2016-06-29
CN109416340A (zh) 2019-03-01
CA3022281A1 (en) 2017-11-23
JP2019516992A (ja) 2019-06-20
US10634642B2 (en) 2020-04-28
WO2017199009A1 (en) 2017-11-23
JP6870003B2 (ja) 2021-05-12
US20190302051A1 (en) 2019-10-03
EP3458851A1 (en) 2019-03-27

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