JP2019504124A - ボンドプライ材料及びそれから形成された回路アセンブリ - Google Patents
ボンドプライ材料及びそれから形成された回路アセンブリ Download PDFInfo
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- JP2019504124A JP2019504124A JP2018521227A JP2018521227A JP2019504124A JP 2019504124 A JP2019504124 A JP 2019504124A JP 2018521227 A JP2018521227 A JP 2018521227A JP 2018521227 A JP2018521227 A JP 2018521227A JP 2019504124 A JP2019504124 A JP 2019504124A
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- 239000011115 styrene butadiene Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C09J153/00—Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
- C09J153/02—Vinyl aromatic monomers and conjugated dienes
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/144—Stacked arrangements of planar printed circuit boards
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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Abstract
Description
ポリブタジエン及び/又はポリイソプレン、ならびに、さらに、アリル基を有する窒素含有化合物を含む25〜45体積パーセントの液体樹脂であって、窒素含有化合物は、全組成物に基づいて、5〜15体積パーセントの量で存在し、ポリブタジエン及び/又はポリイソプレンは、全樹脂に基づいて、15〜60体積パーセント未満の量で存在する、液体樹脂;
少なくとも260℃のピーク融点を有する、10〜40重量パーセントの臭素含有又はリン含有芳香族化合物;ならびに
5〜50体積パーセントの無機充填剤
を含み、
ボンドプライは、少なくともV−1のUL−94等級、10GHzで0.006未満のDf及び10GHzで2〜10のDkを有する、ボンドプライ層に関する。
組成物の重量に基づいて、4〜20重量パーセントのポリ(アリーレンエーテル)及び4〜20重量パーセントのエラストマー;
20〜50体積パーセントの無機充填剤;ならびに
25〜37体積パーセント未満の液体樹脂であって、
全樹脂に基づいて、15〜40体積パーセントのポリブタジエン又はポリイソプレン;及び
アリル基を有する5〜10体積パーセントの窒素含有化合物であって、その量は、全組成物に基づく、窒素含有化合物
を含む、液体樹脂
を含み、
回路サブアセンブリは、少なくともV−1のUL−94等級、10GHzで0.006未満のDf及び10GHzで2〜10のDkを有する、ボンドプライ層に関する。
少なくとも2つの回路積層体であって、それぞれが、
熱硬化性組成物から形成された誘電体基材層;
誘電体基材層のそれぞれの側面に接合された導電性金属層であって、それぞれの回路積層体の導電性金属層の少なくとも1つは、回路を形成するようにパターン化されている、導電性金属層を備える回路積層体;
2つの回路積層体のそれぞれの回路の間に配置されたボンドプライ層であって、ボンドプライの2つの側面のそれぞれは、2つの回路積層体の一方の回路と直接接触しており、このボンドプライ層は、ボンドプライが流れて、パターン化導電性金属層により形成された回路によって覆われていない誘電体基材層の領域を充填する、積層のプロセスの生成物であり、ボンドプライ層は、溶媒の非存在下でのパーセントに基づいて、
ポリブタジエン及び/又はポリイソプレン、ならびに、さらに、アリル基を有する窒素含有化合物を含む25〜45体積パーセントの液体樹脂であって、窒素含有化合物は、全組成物に基づいて、5〜15体積パーセントの量で存在し、ポリブタジエン及び/又はポリイソプレンは、全樹脂に基づいて、15〜60体積パーセント未満の量で存在する、液体樹脂;
少なくとも260℃のピーク融点を有する、10〜40重量パーセントの臭素含有又はリン含有芳香族化合物;ならびに
5〜50体積パーセントの無機充填剤
を含む組成物から形成されている、ボンドプライ層
を備える回路サブアセンブリであって、
回路アセンブリは、少なくともV−0のUL−94等級、10GHzで0.006未満のDf及び10GHzで2未満〜10のDkを有する、回路サブアセンブリに関する。
ポリブタジエン及び/又はポリイソプレン、ならびに、さらに、アリル基を有する窒素含有化合物を含む25〜45体積パーセントの液体樹脂であって、窒素含有化合物は、全組成物に基づいて、5〜15体積パーセントの量で存在し、ポリブタジエン及び/又はポリイソプレンは、全樹脂に基づいて、20〜60体積パーセント未満の量で存在する、液体樹脂;
少なくとも260℃のピーク融点を有する、10〜40重量パーセントの臭素含有又はリン含有芳香族化合物;ならびに
5〜35体積パーセントの無機充填剤
を含み、
ボンドプライは、少なくともV−1のUL−94等級、10GHzで0.006未満のDf及び10GHzで2〜10のDkを有する、ボンドプライ層に関する。
組成物の重量に基づいて、5〜20重量パーセントのポリ(アリーレンエーテル)及び5〜20重量パーセントのエラストマー;
20〜30体積パーセントの無機充填剤;及び
25体積パーセント〜37体積パーセント未満の液体樹脂であって、
全樹脂に基づいて、20〜40体積パーセントのポリブタジエン又はポリイソプレン、及び
アリル基を有する5〜10体積パーセントの窒素含有化合物であって、その量は、全組成物に基づく、窒素含有化合物
を含む液体樹脂
を含み、
回路サブアセンブリは、少なくともV−1のUL−94等級、10GHzで0.006未満のDf及び10GHzで2〜10のDkを有する、ボンドプライ層に関する。
少なくとも2つの回路積層体であって、それぞれが、
熱可塑性組成物から形成された誘電体基材層;
誘電体基材層のそれぞれの側面に接合された導電性金属層であって、それぞれの回路積層体の導電性金属層の少なくとも1つは、回路を形成するためにパターン化されている、導電性金属層を備える回路積層体;
2つの回路積層体のそれぞれの回路の間に配置されたボンドプライ層であって、ボンドプライの2つの側面のそれぞれは、2つの回路積層体のうち一方の回路と直接接触しており、ボンドプライ層は、ボンドプライが流れて、パターン化導電性金属層により形成された回路によって覆われていない誘電体基材層の領域を充填する、積層のプロセスの生成物であり、ボンドプライ層は、溶媒非存在下でのパーセントに基づいて、
ポリブタジエン及び/又はポリイソプレン、ならびに、さらに、アリル基を有する窒素含有化合物を含む25〜45体積パーセントの液体樹脂であって、窒素含有化合物は、全組成物に基づいて、5〜15体積パーセントの量で存在し、ポリブタジエン及び/又はポリイソプレンは、全樹脂に基づいて、20〜60体積パーセント未満の量で存在する、液体樹脂;
少なくとも260℃のピーク融点を有する、10〜40重量パーセントの臭素含有又はリン含有芳香族化合物;ならびに
5〜35体積パーセントの無機充填剤
を含む組成物から形成されている、ボンドプライ層
を備える、回路サブアセンブリであって、
回路アセンブリは、少なくともV−0のUL−94等級、10GHzで0.006未満のDf及び10GHzで2未満〜10のDkを有する、回路サブアセンブリに関する。
の複数の構造単位を含む。いくつかの実施形態において、それぞれのRは、独立して、C1〜7アルキル又はフェニル、例えば、C1〜4アルキルであり、それぞれのR’は、独立して水素又はメチルである。
で表される。例示的なアルケニル芳香族化合物には、スチレン、3−メチルスチレン、4−メチルスチレン、3,5−ジエチルスチレン、4−n−プロピルスチレン、アルファ−メチルスチレン、アルファ−メチルビニルトルエン、アルファ−クロロスチレン、アルファ−ブロモスチレン、ジクロロスチレン、ジブロモスチレン、テトラ−クロロスチレン、など、及び前述の化合物の少なくとも1種を含む組み合わせが含まれる。スチレン及び/又はアルファ−メチルスチレンが、しばしば使用される。
特に、反応性窒素含有化合物である架橋剤をボンドプライ層で使用することが有利であることが見出された。窒素含有化合物は、難燃性に関してリン含有化合物と相乗的に作用し得る。このような窒素含有化合物の例には、限定することなく、トリアジン、グアニジン、シアヌレート、イソシアヌレート、ポリリン酸アンモニウム、ホスファザン、シラザン及びそのポリマー、メラミン系樹脂など、ならびにそれらの混合物が含まれ得る。具体的には、反応性シアヌレート化合物又はイソシアヌレート化合物には、トリアリルシアヌレートが含まれ得る。これらの窒素含有化合物は、それらの調製のための方法と同様に、当技術分野で知られている。このような化合物も市販されている。
いくつかの実施形態において、ボンドプライは、ハロゲンフリー難燃剤として、有効量のジヒドロ−オキサ−ホスホ−フェナントレン(DOPO)誘導体を含む。重量パーセントの点で十分量及び体積パーセントの点で無機充填剤と適正な組み合わせでの、このような化合物は、UL−94(Underwriter’s Laboratories Subject 94)に従う望ましいV−0等級、及び慣例の難燃剤系が不合格になる傾向があるガラス繊維強化配合物を含めて、関連試験法の他の優れた等級を獲得し得る。いくつかの実施形態において、ガラス繊維強化誘電体層は、任意選択で強化されたボンドプライと組み合わせられる。
構造(5)において、それぞれのR1、R2、R3及びR4は、独立して、水素、C1〜C15アルキル、C6〜C12アリール、C7〜C15アラルキルもしくはC7〜C15アルカリルであるか;又はR1及びR2、もしくはR3及びR4は、一緒になって、飽和もしくは不飽和環式環を形成し得、ここで、前記飽和もしくは不飽和環式環は、C1〜C6アルキルで任意選択で置換されていてもよく;それぞれのmは、独立して1、2、3又は4であり;nは、2〜12、具体的には2〜6、より具体的には2〜3である。
本組成物中のDOPO誘導体のピーク融点は、240℃超、具体的には240〜310℃、より具体的には274〜305℃であり得る。ピーク融点の決定のために、示差走査熱量計(DSC)、例えば、機器製造者推奨手順に従って標準校正によるTA Instruments Q2000分析器が使用されてもよい。ピーク融点は、特定の融解転移についての最高吸熱である。
一般に、オキサホスホリンオキシド含有芳香族化合物は、誘電体基材のための熱硬化性組成物に、全組成物に基づいて、10〜35重量%、具体的には15〜30重量%、より具体的には少なくとも20重量%の量で添加され得る。全樹脂、すなわち、樹脂系(ポリマー及びオリゴマー、又は樹脂系の一部になる反応性希釈剤のすべてを含むが、無機充填剤又は非反応性添加剤を含まない)に基づいて、オキサホスホリンオキシド含有芳香族化合物の量は、樹脂成分のみの重量に基づいて、90重量%超、具体的には90重量%〜130重量%、より具体的には95〜120重量%である。誘電体基材組成物中オキサホスホリンオキシド含有芳香族化合物の量は、組成物が、全組成物に基づいて、1重量%〜10重量%、具体的には2〜5重量%のリン含有量を有するように選択され得る。
(実施例)
具体化されたボンドプライ組成物の利点を実証するために、表1に掲げられた材料を以下の実施例で使用した。
以下の実施例は、本発明によるボンドプライの性能を実証する。以下の表2(実施例1)、表3(実施例2)、表4(実施例3)、及び表5(実施例4)に示される組成物を有する様々なボンドプライを調製した。表2のボンドプライは、リン含有難燃剤を含む。それぞれ臭素含有難燃剤を含む、表3のボンドプライは、高いDkの材料(6.15のDk)であり、ならびに表4、表5、及び表6のボンドプライは、低いDkの材料(3.0〜3.5のDk)である。
Claims (20)
- 組成物から形成された、50〜400マイクロメートルの厚さを有するボンドプライ層において、前記組成物は、
ポリブタジエン及びポリイソプレンのうちの少なくとも一方と、さらに、アリル基を有する窒素含有化合物とを含んでなる25〜45体積パーセントの液体樹脂であって、前記窒素含有化合物は、全組成物に基づいて、5〜15体積パーセントの量で存在し、ポリブタジエン及びポリイソプレンのうちの少なくとも一方は、全前記樹脂に基づいて、15〜60体積パーセント未満の量で存在する、液体樹脂;
少なくとも約260℃のピーク融点を有する、10〜40重量パーセントの臭素含有又はリン含有芳香族化合物;ならびに
5〜50体積パーセントの無機充填剤
を含み、すべてのパーセントは、溶媒非存在下で前記ボンドプライ組成物に基づいて計算されており、
前記ボンドプライは、少なくともV−1のUL−94等級、10GHzで0.006未満のDf及び10GHzで2〜10のDkを有する、ボンドプライ層。 - 1〜25体積パーセントのポリ(アリーレンエーテル)をさらに含む、請求項1に記載のボンドプライ層。
- 前記臭素含有化合物が、50〜80%の(理論的)臭素重量%、500〜2500の分子量を有し、2〜4つの臭素化芳香族環を含む、請求項1に記載のボンドプライ層。
- 前記リン含有芳香族化合物が、以下の構造:
で表されるオキサホスホリンオキシド含有化合物である、請求項1に記載のボンドプライ層。 - 前記臭素含有化合物が、エチレンビステトラブロモフタリド、テトラブロモジフェノキシベンゼン、デカブロモジフェノキシオキシド、及びエタン−1,2−ビス(ペンタブロモフェニル)からなる群から選択される、請求項1に記載のボンドプライ層。
- 前記オキサホスホリンオキシド含有芳香族化合物が、6H−ジベンゾ[c,e][1,2]オキサホスホリン,6,6’−(1,4−エタンジイル)ビス−,6,6’−ジオキシド;6H−ジベンゾ[c,e][1,2]オキサホスホリン,6,6’−(1,4−ブタンジイル)ビス−,6,6’−ジオキシド;6H−ジベンゾ[c,e][1,2]オキサホスホリン,6,6’−(p−キシレンジイル)ビス−,6,6’−ジオキシド、及びそれらの組み合わせからなる群から選択される、請求項4に記載のボンドプライ層。
- 前記窒素含有化合物が、トリアジン環、及び前記組成物の樹脂成分と反応性であるアリル基を有する、請求項1に記載のボンドプライ層。
- 前記ボンドプライ層の前記組成物が、4〜25重量パーセントのポリ(アリーレンエーテル)及び4〜25重量パーセントのエラストマー性ポリマーを、両方とも固体形態で含む、請求項1に記載のボンドプライ層。
- 前記組成物が、
前記組成物の重量に基づいて、4〜20重量パーセントのポリ(アリーレンエーテル)及び4〜20重量パーセントのエラストマー;
20〜50体積の前記無機充填剤;ならびに
25体積パーセント〜37体積パーセント未満の前記液体樹脂であって、
全樹脂に基づいて、15〜40体積パーセントのポリブタジエン又はポリイソプレン;及び
アリル基を有する5〜10体積パーセントの窒素含有化合物
を含む液体樹脂
を含む、請求項1に記載のボンドプライ層。 - 前記液体樹脂が、5〜15体積パーセントのジエン反応性モノマーをさらに含む、請求項1に記載のボンドプライ層。
- 少なくとも2つの回路積層体であって、それぞれが、
熱硬化性組成物から形成された誘電体基材層;
前記誘電体基材層のそれぞれの側面に接合された導電性金属層であって、それぞれの回路積層体の前記導電性金属層の少なくとも1つは、回路を形成するようにパターン化されている、導電性金属層
を備える回路積層体;
前記2つの回路積層体のそれぞれの回路の間に配置されたボンドプライ層であって、前記ボンドプライの2つの側面のそれぞれは、前記2つの回路積層体の一方の回路と直接接触しており、前記ボンドプライ層は、前記ボンドプライが流れて、パターン化導電性金属層により形成された回路によって覆われていない前記誘電体基材層の領域を充填する、積層のプロセスの生成物であり、前記ボンドプライ層は、溶媒の非存在下にて
ポリブタジエン及びポリイソプレンの少なくとも一方と、さらに、アリル基を有する窒素含有化合物とを含んでなる25〜45体積パーセントの液体樹脂であって、前記窒素含有化合物は、全組成物に基づいて、5〜15体積パーセントの量で存在し、前記ポリブタジエン及びポリイソプレンのうちの少なくともは、全前記樹脂に基づいて、15〜60体積パーセント未満の量で存在する、液体樹脂;
少なくとも260℃のピーク融点を有する、10〜40重量パーセントの臭素含有又はリン含有芳香族化合物;ならびに
20〜50体積パーセントの無機充填剤
を含む組成物から形成されている、ボンドプライ層
を備える回路サブアセンブリであって、
前記回路アセンブリは、少なくともV−0のUL−94等級、10GHzで0.006未満のDf及び10GHzで2未満〜10のDkを有する、回路サブアセンブリ。 - 前記組成物が、
前記熱硬化性組成物の重量に基づいて、5〜20重量パーセントのポリ(アリーレンエーテル)及びエラストマー;
前記熱硬化性組成物の重量に基づいて、10〜40重量パーセントの260℃〜500℃のピーク融点を有する臭素含有又はリン含有芳香族化合物;
20〜50体積パーセントの無機充填剤
を含む、請求項11に記載の回路サブアセンブリ。 - 前記液体樹脂が、反応性モノマーをさらに含む、請求項12に記載の回路サブアセンブリ。
- 前記窒素含有化合物が、トリアジン環を有し、前記ボンドプライ層中のポリブタジエン樹脂及びポリイソプレン樹脂のうちの少なくとも一方と反応性であるアリル基を有する、請求項11に記載の回路サブアセンブリ。
- 前記無機充填剤が、シリカ、二酸化チタン、及びそれらの組み合わせからなる群から選択される、請求項11に記載の回路サブアセンブリ。
- 前記臭素含有芳香族化合物が、理論的に50〜80%の臭素重量%、500〜2000の分子量を有し、2、3又は4つまでの臭素化芳香族環を含む、請求項11に記載の回路サブアセンブリ。
- 前記熱硬化性樹脂が、1,2−ポリブタジエン、ポリイソプレン、ポリブタジエン−ポリイソプレンコポリマー、ポリ(フェニレンエーテル)樹脂、硬化性環式オレフィン又はそれらのコポリマー、及びそれらの組み合わせからなる群から選択され、かつ前記オキサホスホリンオキシド含有芳香族化合物は、以下の構造:
で表される、請求項11に記載の回路サブアセンブリ。 - 前記誘電体基材が、50〜1000マイクロメートルの厚さを有し、前記ボンドプライ層が、50〜400マイクロメートルの厚さを有し、前記誘電体基材とそれぞれの導電性金属層との間の、任意選択の接着層は、前記誘電体基材層の厚さの10パーセント未満である厚さを有する、請求項11に記載の回路サブアセンブリ。
- (a)少なくとも2つの回路積層体であって、それぞれが、
(i)熱硬化性組成物から形成された誘電体基材層であって、前記熱硬化性組成物は、前記熱硬化性組成物の全重量に基づいて、
10〜35重量%のポリブタジエン樹脂及びポリイソプレン樹脂のうちの少なくとも一方と、
30〜70重量パーセントの無機充填剤と、
少なくとも260℃〜500℃のピーク融点を有する10〜35重量%の臭素含有又はリン含有芳香族化合物とを含んでなる、誘電体基材層と、
(ii)前記誘電体基材層のそれぞれの側面に接合された導電性金属層であって、それぞれの回路積層体の前記導電性金属層の少なくとも1つは、回路を形成するようにパターン化されている、導電性金属層と
を備える回路積層体、及び、
(b)前記少なくとも2つの回路積層体間に配置されたボンドプライ層であって、少なくとも2つの回路積層体の少なくとも1つにおいて少なくとも1つの回路又は導電性層と直接接触しており、前記ボンドプライ層の前記組成物は、
全前記樹脂に基づいて、20〜65体積パーセント未満の量の、そのすべて又は一部が液体樹脂の形態であるポリブタジエン及びポリイソプレンのうちの少なくとも一方と、
ポリブタジエン及びポリイソプレンのうちの少なくとも一方と、さらに、アリル基を有する窒素含有化合物とを含んでなる25〜45体積パーセントの液体樹脂であって、前記窒素含有化合物は、全組成物に基づいて、5〜15体積パーセントの量で存在し、ポリブタジエン及びポリイソプレンのうちの少なくとも一方は、全前記樹脂に基づいて、15〜65体積パーセント未満の量で存在する、液体樹脂と、
少なくとも260℃のピーク融点を有する10〜40重量パーセントの臭素含有又はリン含有芳香族化合物と、
5〜50体積パーセントの無機充填剤と
を含む組成物から形成されている、ボンドプライ層
を備える、回路サブアセンブリであって、
前記回路サブアセンブリは、少なくともV−1のUL−94等級、10GHzで0.006未満のDf及び10GHzで3.8未満のDkを有する、回路サブアセンブリ。 - 前記誘電体基材層の前記熱硬化性組成物中に存在する充填剤の体積パーセントならびにポリブタジエン及びポリイソプレンのうちの少なくとも一方の体積パーセントが、前記ボンドプライの組成物におけるよりも少なくとも5体積パーセント大きい、請求項18に記載の組成物。
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US10233365B2 (en) | 2019-03-19 |
CN108368396A (zh) | 2018-08-03 |
DE112016005389T5 (de) | 2018-08-02 |
KR20180085719A (ko) | 2018-07-27 |
CN108368396B (zh) | 2022-03-04 |
US20170145266A1 (en) | 2017-05-25 |
KR102687796B1 (ko) | 2024-07-24 |
JP6911024B2 (ja) | 2021-07-28 |
WO2017091491A1 (en) | 2017-06-01 |
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