JP2019501041A5 - - Google Patents
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- Publication number
- JP2019501041A5 JP2019501041A5 JP2018534871A JP2018534871A JP2019501041A5 JP 2019501041 A5 JP2019501041 A5 JP 2019501041A5 JP 2018534871 A JP2018534871 A JP 2018534871A JP 2018534871 A JP2018534871 A JP 2018534871A JP 2019501041 A5 JP2019501041 A5 JP 2019501041A5
- Authority
- JP
- Japan
- Prior art keywords
- wall
- chambers
- fluid
- actuatable
- inoperable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012530 fluid Substances 0.000 claims description 185
- 239000000463 material Substances 0.000 claims description 66
- 230000008021 deposition Effects 0.000 claims description 61
- 238000002347 injection Methods 0.000 claims description 56
- 239000007924 injection Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 13
- 238000010304 firing Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 description 61
- 239000000758 substrate Substances 0.000 description 23
- 239000004020 conductor Substances 0.000 description 14
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 10
- 230000005684 electric field Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000010146 3D printing Methods 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- LUXYLEKXHLMESQ-UHFFFAOYSA-N iridium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ir+3].[Ir+3] LUXYLEKXHLMESQ-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
Images
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1600332.9 | 2016-01-08 | ||
| GB1600332.9A GB2546097B (en) | 2016-01-08 | 2016-01-08 | Droplet deposition head |
| PCT/GB2016/054095 WO2017118843A1 (en) | 2016-01-08 | 2016-12-30 | Droplet deposition head and actuator component therefor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019501041A JP2019501041A (ja) | 2019-01-17 |
| JP2019501041A5 true JP2019501041A5 (enExample) | 2020-02-20 |
| JP6909222B2 JP6909222B2 (ja) | 2021-07-28 |
Family
ID=55445719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018534871A Active JP6909222B2 (ja) | 2016-01-08 | 2016-12-30 | 液滴堆積ヘッド及びそのためのアクチュエータ構成要素 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10500854B2 (enExample) |
| JP (1) | JP6909222B2 (enExample) |
| CN (1) | CN108472958B (enExample) |
| GB (1) | GB2546097B (enExample) |
| WO (1) | WO2017118843A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2563235B (en) * | 2017-06-06 | 2021-05-26 | Xaar Technology Ltd | Method and apparatus for droplet deposition |
| GB2569090B (en) | 2017-09-25 | 2021-03-10 | Xaar Technology Ltd | Method, apparatus and circuitry for droplet deposition |
| CN110962463A (zh) * | 2018-09-29 | 2020-04-07 | 马富军 | 一种阵列式喷墨头 |
| US20210347169A1 (en) * | 2019-01-31 | 2021-11-11 | Hewlett-Packard Development Company, L.P. | Fluidic device with nozzle layer conductors |
| JP7627540B2 (ja) * | 2019-11-01 | 2025-02-06 | マシューズ インターナショナル コーポレイション | 噴射アセンブリを含む非接触沈着システム |
| GB202007236D0 (en) * | 2020-05-15 | 2020-07-01 | 3C Project Tech Limited | Droplet ejector assembly structure and methods |
| CN112265379B (zh) * | 2020-10-27 | 2022-02-15 | 华中科技大学 | 一种抑制电场串扰的独立可控阵列化电喷印喷头 |
| GB2616646B (en) * | 2022-03-16 | 2024-06-05 | Xaar Technology Ltd | Methods and apparatus for droplet deposition |
| GB2616859B (en) * | 2022-03-21 | 2024-11-20 | Xaar Technology Ltd | Methods and apparatus for droplet deposition |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992808A (en) * | 1987-01-10 | 1991-02-12 | Xaar Limited | Multi-channel array, pulsed droplet deposition apparatus |
| US4879568A (en) * | 1987-01-10 | 1989-11-07 | Am International, Inc. | Droplet deposition apparatus |
| US5438739A (en) * | 1993-05-25 | 1995-08-08 | Compaq Computer Corporation | Method of making an elongated ink jet printhead |
| KR970009117B1 (en) * | 1993-05-31 | 1997-06-05 | Samsung Electronics Co Ltd | Ink-jet print head |
| JP3183017B2 (ja) * | 1994-02-24 | 2001-07-03 | ブラザー工業株式会社 | インク噴射装置 |
| JP3173276B2 (ja) * | 1994-04-06 | 2001-06-04 | ブラザー工業株式会社 | インク噴射装置 |
| JPH08192515A (ja) * | 1995-01-19 | 1996-07-30 | Brother Ind Ltd | インク噴射装置 |
| JP3166557B2 (ja) * | 1995-05-17 | 2001-05-14 | ブラザー工業株式会社 | インク噴射装置の製造方法 |
| JP3257960B2 (ja) * | 1996-12-17 | 2002-02-18 | 富士通株式会社 | インクジェットヘッド |
| DE69814486T2 (de) * | 1997-01-14 | 2004-04-01 | Nec Corp. | Tintenstrahlaufzeichnungskopf mit einem piezoelektrischen Substrat |
| EP1124691B1 (en) | 1998-10-24 | 2003-01-02 | Xaar Technology Limited | Droplet deposition apparatus |
| US6560833B2 (en) * | 1998-12-04 | 2003-05-13 | Konica Corporation | Method of manufacturing ink jet head |
| GB9828476D0 (en) | 1998-12-24 | 1999-02-17 | Xaar Technology Ltd | Apparatus for depositing droplets of fluid |
| US6783211B2 (en) * | 1998-12-25 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Ink-jet recording head |
| GB0000368D0 (en) | 2000-01-07 | 2000-03-01 | Xaar Technology Ltd | Droplet deposition apparatus |
| GB0121619D0 (en) | 2001-09-07 | 2001-10-31 | Xaar Technology Ltd | Droplet depostion apparatus |
| JP2003251812A (ja) * | 2002-03-01 | 2003-09-09 | Konica Corp | インクジェットヘッドの製造方法 |
| GB0415529D0 (en) | 2004-07-10 | 2004-08-11 | Xaar Technology Ltd | Droplet deposition apparatus |
| US7344228B2 (en) | 2004-08-02 | 2008-03-18 | Fujifilm Dimatix, Inc. | Actuator with reduced drive capacitance |
| GB0514202D0 (en) * | 2005-07-11 | 2005-08-17 | Xaar Technology Ltd | Droplet deposition apparatus |
| KR101179335B1 (ko) * | 2006-02-17 | 2012-09-03 | 삼성전기주식회사 | 스크린 프린팅에 의한 후막 형성 방법 및 잉크젯 헤드의압전 액츄에이터 형성 방법 |
| JP5533298B2 (ja) * | 2009-07-17 | 2014-06-25 | コニカミノルタ株式会社 | インクジェット記録装置 |
| JP5530989B2 (ja) * | 2011-08-26 | 2014-06-25 | 東芝テック株式会社 | インクジェットヘッド |
| JP6202002B2 (ja) * | 2012-10-02 | 2017-09-27 | コニカミノルタ株式会社 | インクジェットヘッドの駆動方法、インクジェットヘッドの駆動装置及びインクジェット記録装置 |
| JP6163752B2 (ja) * | 2012-12-27 | 2017-07-19 | セイコーエプソン株式会社 | ノズルプレートの製造方法、液体噴射ヘッドの製造方法及び液体噴射装置の製造方法 |
| JP6217448B2 (ja) | 2014-02-24 | 2017-10-25 | ブラザー工業株式会社 | 液体吐出装置及び圧電アクチュエータ |
-
2016
- 2016-01-08 GB GB1600332.9A patent/GB2546097B/en active Active
- 2016-12-30 US US16/068,781 patent/US10500854B2/en active Active
- 2016-12-30 CN CN201680078050.9A patent/CN108472958B/zh active Active
- 2016-12-30 WO PCT/GB2016/054095 patent/WO2017118843A1/en not_active Ceased
- 2016-12-30 JP JP2018534871A patent/JP6909222B2/ja active Active
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