JP2019208053A - キャパシタ - Google Patents
キャパシタ Download PDFInfo
- Publication number
- JP2019208053A JP2019208053A JP2019138523A JP2019138523A JP2019208053A JP 2019208053 A JP2019208053 A JP 2019208053A JP 2019138523 A JP2019138523 A JP 2019138523A JP 2019138523 A JP2019138523 A JP 2019138523A JP 2019208053 A JP2019208053 A JP 2019208053A
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- electrode
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- 239000003990 capacitor Substances 0.000 title claims abstract description 120
- 239000011241 protective layer Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004541 SiN Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004140 HfO Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- -1 SiO 2 Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
図1は、本実施形態に係るキャパシタの上面図である。図2は、本実施形態に係るキャパシタの断面図である。なお、図1に示す上面図は、キャパシタを上から見た場合の外観をそのまま示すものではなく、キャパシタを上から見た場合の各層のレイアウトを示すものである。
第2の実施形態以降では第1の実施形態と共通の事柄についての記述を省略し、異なる点についてのみ説明する。特に、同様の構成による同様の作用効果については実施形態毎には逐次言及しない。
図12は、第3実施形態に係るキャパシタの上面図である。図13は、第3実施形態に係るキャパシタの断面図である。図14は、第3実施形態に係るキャパシタにより形成される容量を示す断面図である。
図15は、第4実施形態に係るキャパシタの上面図である。図16は、第4実施形態に係るキャパシタの断面図である。図17は、第4実施形態に係るキャパシタにより形成される容量を示す断面図である。
Claims (3)
- 基板と、
前記基板上に形成された下部電極と、
前記下部電極上に形成された誘電体膜と、
前記誘電体膜上の一部に形成された上部電極と、
前記下部電極及び前記上部電極を覆う保護層と、
前記保護層を貫通する外部電極と、
を備え、
前記外部電極は、キャパシタを上から見た平面視において、前記上部電極の周縁で画定される領域内にのみ形成されている、
キャパシタ。 - 前記上部電極は、離間して形成された第1上部電極及び第2上部電極を備え、
前記外部電極は、前記第1上部電極に接続された第1外部電極、及び、前記第2上部電極に接続された第2外部電極を備え、
前記第1外部電極は、前記第1上部電極の周縁で画定される領域内にのみ形成され、
前記第2外部電極は、前記第2上部電極の周縁で画定される領域内にのみ形成されている、
請求項1に記載のキャパシタ。 - 前記下部電極は、離間して形成された第1下部電極及び第2下部電極を備え、
前記上部電極は、前記第1下部電極上に形成された前記第1上部電極、前記第2下部電極上に形成された前記第2上部電極、及び、前記第1下部電極及び前記第2下部電極を跨いで形成された第3上部電極を備える、
請求項2に記載のキャパシタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021043275A JP2021101480A (ja) | 2017-07-26 | 2021-03-17 | キャパシタ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017144681 | 2017-07-26 | ||
JP2017144681 | 2017-07-26 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019530231A Division JP6579502B2 (ja) | 2017-07-26 | 2018-07-11 | キャパシタ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021043275A Division JP2021101480A (ja) | 2017-07-26 | 2021-03-17 | キャパシタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019208053A true JP2019208053A (ja) | 2019-12-05 |
JP6856095B2 JP6856095B2 (ja) | 2021-04-07 |
Family
ID=65039696
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019530231A Active JP6579502B2 (ja) | 2017-07-26 | 2018-07-11 | キャパシタ |
JP2019138523A Active JP6856095B2 (ja) | 2017-07-26 | 2019-07-29 | キャパシタ |
JP2021043275A Pending JP2021101480A (ja) | 2017-07-26 | 2021-03-17 | キャパシタ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019530231A Active JP6579502B2 (ja) | 2017-07-26 | 2018-07-11 | キャパシタ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021043275A Pending JP2021101480A (ja) | 2017-07-26 | 2021-03-17 | キャパシタ |
Country Status (4)
Country | Link |
---|---|
US (2) | US11217395B2 (ja) |
JP (3) | JP6579502B2 (ja) |
CN (1) | CN110959188B (ja) |
WO (1) | WO2019021827A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6579502B2 (ja) * | 2017-07-26 | 2019-09-25 | 株式会社村田製作所 | キャパシタ |
JP7318279B2 (ja) * | 2019-04-03 | 2023-08-01 | 株式会社村田製作所 | キャパシタ |
JP7439392B2 (ja) * | 2019-05-13 | 2024-02-28 | 株式会社村田製作所 | キャパシタ |
CN113841230A (zh) * | 2019-05-21 | 2021-12-24 | 株式会社村田制作所 | 电容器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06151707A (ja) * | 1992-11-13 | 1994-05-31 | Rohm Co Ltd | 半導体装置の製法 |
JPH10163437A (ja) * | 1996-08-20 | 1998-06-19 | Ramtron Internatl Corp | 強誘電体キャパシタの部分的にあるいは完全に被包された上部電極 |
JP2000228499A (ja) * | 1998-12-03 | 2000-08-15 | Matsushita Electronics Industry Corp | 半導体記憶装置およびその製造方法 |
JP2004281446A (ja) * | 2003-03-12 | 2004-10-07 | Fujitsu Ltd | 薄膜キャパシタ素子、その製造方法及び電子装置 |
JP2006351896A (ja) * | 2005-06-17 | 2006-12-28 | Yamaha Corp | キャパシタ装置 |
JP2016046323A (ja) * | 2014-08-20 | 2016-04-04 | 株式会社デンソー | 半導体装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04241449A (ja) * | 1991-01-16 | 1992-08-28 | Hitachi Ltd | 半導体集積回路装置 |
JP3516593B2 (ja) * | 1998-09-22 | 2004-04-05 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP2002141472A (ja) * | 2000-11-06 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4827299B2 (ja) * | 2001-01-26 | 2011-11-30 | 富士通株式会社 | キャパシタ及び半導体装置 |
JP2003224033A (ja) * | 2002-01-30 | 2003-08-08 | Kyocera Corp | 薄膜コンデンサ |
US7161793B2 (en) * | 2002-11-14 | 2007-01-09 | Fujitsu Limited | Layer capacitor element and production process as well as electronic device |
JP4157375B2 (ja) * | 2002-12-26 | 2008-10-01 | 京セラ株式会社 | 可変容量コンデンサ及びそれを用いた高周波部品 |
US7078785B2 (en) * | 2003-09-23 | 2006-07-18 | Freescale Semiconductor, Inc. | Semiconductor device and making thereof |
JP2005311299A (ja) * | 2004-03-26 | 2005-11-04 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP4674606B2 (ja) * | 2005-10-18 | 2011-04-20 | 株式会社村田製作所 | 薄膜キャパシタ |
JP4997757B2 (ja) | 2005-12-20 | 2012-08-08 | 富士通株式会社 | 薄膜キャパシタ及びその製造方法、電子装置並びに回路基板 |
JP4738299B2 (ja) * | 2006-09-20 | 2011-08-03 | 富士通株式会社 | キャパシタ、その製造方法、および電子基板 |
JP5566003B2 (ja) * | 2007-11-08 | 2014-08-06 | スパンション エルエルシー | 半導体装置およびその製造方法 |
JP2010040905A (ja) * | 2008-08-07 | 2010-02-18 | Panasonic Corp | 半導体装置およびその製造方法 |
JP5455352B2 (ja) | 2008-10-28 | 2014-03-26 | 太陽誘電株式会社 | 薄膜mimキャパシタ及びその製造方法 |
JP5195843B2 (ja) * | 2010-08-18 | 2013-05-15 | 富士通セミコンダクター株式会社 | 半導体装置 |
US8906773B2 (en) * | 2012-12-12 | 2014-12-09 | Freescale Semiconductor, Inc. | Integrated circuits including integrated passive devices and methods of manufacture thereof |
JP6579502B2 (ja) * | 2017-07-26 | 2019-09-25 | 株式会社村田製作所 | キャパシタ |
-
2018
- 2018-07-11 JP JP2019530231A patent/JP6579502B2/ja active Active
- 2018-07-11 WO PCT/JP2018/026232 patent/WO2019021827A1/ja active Application Filing
- 2018-07-11 CN CN201880048521.0A patent/CN110959188B/zh active Active
-
2019
- 2019-06-21 US US16/448,366 patent/US11217395B2/en active Active
- 2019-07-29 JP JP2019138523A patent/JP6856095B2/ja active Active
-
2021
- 2021-03-17 JP JP2021043275A patent/JP2021101480A/ja active Pending
- 2021-11-29 US US17/536,310 patent/US11587738B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06151707A (ja) * | 1992-11-13 | 1994-05-31 | Rohm Co Ltd | 半導体装置の製法 |
JPH10163437A (ja) * | 1996-08-20 | 1998-06-19 | Ramtron Internatl Corp | 強誘電体キャパシタの部分的にあるいは完全に被包された上部電極 |
JP2000228499A (ja) * | 1998-12-03 | 2000-08-15 | Matsushita Electronics Industry Corp | 半導体記憶装置およびその製造方法 |
JP2004281446A (ja) * | 2003-03-12 | 2004-10-07 | Fujitsu Ltd | 薄膜キャパシタ素子、その製造方法及び電子装置 |
JP2006351896A (ja) * | 2005-06-17 | 2006-12-28 | Yamaha Corp | キャパシタ装置 |
JP2016046323A (ja) * | 2014-08-20 | 2016-04-04 | 株式会社デンソー | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2019021827A1 (ja) | 2019-01-31 |
US11217395B2 (en) | 2022-01-04 |
JP2021101480A (ja) | 2021-07-08 |
CN110959188A (zh) | 2020-04-03 |
JP6579502B2 (ja) | 2019-09-25 |
JP6856095B2 (ja) | 2021-04-07 |
US11587738B2 (en) | 2023-02-21 |
US20220084754A1 (en) | 2022-03-17 |
CN110959188B (zh) | 2023-10-03 |
JPWO2019021827A1 (ja) | 2019-11-07 |
US20190311854A1 (en) | 2019-10-10 |
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