JP2019207934A - 背面密着フィルムおよびダイシングテープ一体型背面密着フィルム - Google Patents
背面密着フィルムおよびダイシングテープ一体型背面密着フィルム Download PDFInfo
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- JP2019207934A JP2019207934A JP2018102374A JP2018102374A JP2019207934A JP 2019207934 A JP2019207934 A JP 2019207934A JP 2018102374 A JP2018102374 A JP 2018102374A JP 2018102374 A JP2018102374 A JP 2018102374A JP 2019207934 A JP2019207934 A JP 2019207934A
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- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
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- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
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- 238000000411 transmission spectrum Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical group C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 235000013799 ultramarine blue Nutrition 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- PSUYMGPLEJLSPA-UHFFFAOYSA-N vanadium zirconium Chemical compound [V].[V].[Zr] PSUYMGPLEJLSPA-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/732—Location after the connecting process
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Abstract
Description
(A)レーザー光
レーザー光源 半導体レーザー励起Nd:YAGレーザー
波長 1064nm
レーザー光スポット断面積 3.14・10-8cm2
発振形態 Qスイッチパルス 繰り返し周波数 100kHz以下
パルス幅 1μs以下
出力 1mJ以下
レーザー光品質 TEM00
偏光特性 直線偏光
(B)集光用レンズ
倍率 100倍以下
NA 0.55
レーザー光波長に対する透過率 100%以下
(C)半導体基板が載置される載置台の移動速度 280mm/秒以下
まず、エポキシ樹脂E1(商品名「KI-3000-4」,東都化成株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」,三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」,明和化成株式会社製)100質量部と、アクリル樹脂(商品名「テイサンレジン SG-P3」,重量平均分子量は85万,ガラス転移温度Tgは12℃,ナガセケムテックス株式会社製)90質量部と、フィラーF1(商品名「SO-25R」,シリカ,平均粒径は0.5μm,株式会社アドマテックス製)220質量部と、熱硬化触媒(商品名「キュアゾール 2PZ」,四国化成工業株式会社製)10質量部と、近赤外線吸収顔料P1(商品名「E-ITO」,酸化インジウム錫,平均粒径は30nm,三菱マテリアル電子化成株式会社製)30質量部と、可視光吸収染料(商品名「OIL BLACK BS」,オリエント化学工業株式会社製)5質量部とを、メチルエチルケトンに加えて混合し、固形分濃度36質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って乾燥および熱硬化させ、PETセパレータ上に厚さ25μmの背面密着フィルムを作製した。実施例1ならびに後記の実施例および比較例の背面密着フィルムを形成するための各樹脂組成物の組成を、表1に掲げる(表1において、組成を表す各数値の単位は、当該組成内での相対的な“質量部”である)。
近赤外線吸収顔料P1の配合量を30質量部に代えて60質量部(実施例2)または90質量部(実施例3)としたこと以外は実施例1の背面密着フィルムと同様にして、実施例2,3の背面密着フィルムを作製した。
フィラーF1220質量部に代えてフィラーF2(商品名「YA010」,シリカ,平均粒径は10nm,株式会社アドマテックス製)220質量部を用いたこと以外は実施例1の背面密着フィルムと同様にして、実施例4の背面密着フィルムを作製した。
近赤外線吸収顔料P1を用いなかったこと以外は実施例1の背面密着フィルムと同様にして、比較例1の背面密着フィルムを作製した。
近赤外線吸収顔料P130質量部に代えて近赤外線吸収顔料P2(重金属酸化物系顔料,1600nmに吸収極大波長を有し且つ平均粒径は20nm)30質量部を用いたこと、および、可視光吸収染料(商品名「OIL BLACK BS」,オリエント化学工業株式会社製)用いなかったこと、以外は実施例1の背面密着フィルムと同様にして、比較例2の背面密着フィルムを作製した。
可視光吸収染料(商品名「OIL BLACK BS」,オリエント化学工業株式会社製)用いなかったこと以外は実施例1の背面密着フィルムと同様にして、比較例3の背面密着フィルムを作製した。
フィラーF1220質量部に代えてフィラーF3(商品名「FB-105FD」,シリカ,平均粒径は11μm,デンカ株式会社製)220質量部を用いたこと、および、近赤外線吸収顔料P1を用いなかったこと、以外は実施例1の背面密着フィルムと同様にして、比較例4の背面密着フィルムを作製した。
実施例1〜4および比較例1〜4の各背面密着フィルム(厚さ25μm)から切り出された試料片について、紫外可視近赤外分光光度計(商品名「V−670」,日本分光株式会社製)および積分球ユニットを使用して、300〜2000nmの波長域における全光線透過率スペクトルを測定した。このスペクトルから、波長1800nmの光線の全光線透過率(第1全光線透過率T1)、波長1000nmの光線の全光線透過率(第2全光線透過率T2)、および波長532nmの光線の全光線透過率(第3全光線透過率T3)を抽出して得た。これらの値(%)およびT2/T1の値を表1に掲げる。
実施例1〜4および比較例1〜4の各背面密着フィルムの赤外線遮蔽性について、第1全光線透過率T1(1800nmの光線の全光線透過率)が40%以下である場合を良と評価し、第1全光線透過率T1が40%を超える場合を不良と評価した。これら評価結果を表1に掲げる。
実施例1〜4および比較例1〜4の各背面密着フィルムについて、赤外線顕微鏡観察における視認性を調べた。具体的には、まず、回路パターンが表面に形成されている基板の回路パターン形成面に背面密着フィルムを貼り合わせた。回路パターンは、1mmの線幅のアルミニウム配線のパターンである。次に、赤外線顕微鏡を使用して、基板表面の回路パターンを背面密着フィルム越しに観察した。使用した赤外線顕微鏡は、実体顕微鏡(商品名「SMZ745T」,株式会社ニコン製)と赤外線カメラ(商品名「MC-781P-0030」,テキサスインスツルメンツ株式会社製)との複合装置である。この観察において、背面密着フィルム越しに1mm幅のパターンを明瞭に視認できた場合を、赤外線顕微鏡観察における視認性が良であると評価し、背面密着フィルム越しに1mm幅のパターンを明瞭には視認できなかった場合を、赤外線顕微鏡観察における視認性が不良であると評価した。
実施例1〜4および比較例1〜4の各背面密着フィルムについて、ステルスダイシングにおけるレーザー加工性を調べた。具体的には、まず、基材と粘着剤層との積層構造を有するダイシングテープにおける粘着剤層上に背面密着フィルムを位置合わせしつつ貼り合わせて、ダイシングテープ一体型背面密着フィルムを作製した。次に、ダイシングテープ一体型背面密着フィルムの背面密着フィルム周りの粘着剤層領域にリングフレームを貼り付けた後、背面密着フィルム面に対し、半導体ウエハ(厚さ300μm,直径12インチ)を、温度80℃および圧力0.15MPaの条件で貼り合わせた。次に、ダイシングテープ一体型背面密着フィルム上の半導体ウエハに対し、ウエハ内部に集光点の合わせられた波長1064nmのレーザー光を前記フィルム越しに照射して、当該半導体ウエハの内部に改質領域を形成した(ステルスダイシング)。レーザー光は、半導体ウエハに対してその分割予定ライン(一区画2mm×2mmの格子状をなす)に沿って照射した。その後、ステルスダイシングを経た半導体ウエハを伴うダイシングテープ一体型背面密着フィルムについて、温度80℃で1時間の加熱処理を行った。
実施例1〜4および比較例1〜4の各背面密着フィルムについて、レーザーマーク性を調べた。具体的には、まず、レーザーマーカー(商品名「MD-S9910」,株式会社キーエンス製)を使用して、532nmの波長のグリーンレーザーにより背面密着フィルムの表面に所定の文字列を刻印した(レーザーマーキング)。このレーザーマーキングでは、照射レーザーのパワーを0.3Wとし、マーキングスピードを300mm/sとし、Qスイッチ周波数を10kHzとした。次に、マイクロスコープ(商品名「VHX-2000」,株式会社キーエンス製)を使用して、刻印文字を明視野条件下で観察した。この観察において、容易に視認可能(即ち、コントラストが明瞭)であること(第1の基準)、および、刻印文字の刻印最大深さが1μm以上であること(第2の基準)の両方を充足する場合を、レーザーマーク性が良である評価し、第1および第2の基準の少なくとも一方を充足しない場合をレーザーマーク性が不良であると評価した。これら評価結果を表1に掲げる。
実施例1〜4の背面密着フィルムは、いずれも、可視光および近赤外線の波長域内の異なる波長にそれぞれが吸収極大を有する複数の吸光成分を含有し、上記第1全光線透過率に対する上記第2全光線透過率の比の値が1.2以上である。このような実施例1〜4の各背面密着フィルムは、上述のように、赤外線遮蔽性、赤外線顕微鏡観察における視認性、ステルスダイシングレーザー加工性、およびレーザーマーク性のいずれについても良好な評価結果が得られた。
10,10’ フィルム(背面密着フィルム)
20 ダイシングテープ
21 基材
22 粘着剤層
30 ウエハ
30a 改質領域
31 チップ
Claims (10)
- 可視光および近赤外線の波長域内の異なる波長にそれぞれが吸収極大を有する複数の吸光成分を含有し、
厚さ25μmの背面密着フィルム試料片について測定される、波長1800nmの光線の第1全光線透過率に対する、前記背面密着フィルム試料片について測定される、波長1000nmの光線の第2全光線透過率の比の値が、1.2以上である、背面密着フィルム。 - 前記第2全光線透過率が50%以上である、請求項1に記載の背面密着フィルム。
- 前記第1全光線透過率が40%以下である、請求項1または2に記載の背面密着フィルム。
- 前記複数の吸光成分は、1200〜2000nmの波長域に吸収極大を有する顔料を含む、請求項1から3のいずれか一つに記載の背面密着フィルム。
- 前記顔料の平均粒径は10μm以下である、請求項4に記載の背面密着フィルム。
- 前記背面密着フィルム試料片について測定される、波長500nmの光線の第3全光線透過率が、40%以下である、請求項1から5のいずれか一つに記載の背面密着フィルム。
- 前記複数の吸光成分は、可視光領域に極大吸収を有する染料を含む、請求項1から6のいずれか一つに記載の背面密着フィルム。
- 平均粒径10μm以下のフィラーを含有する、請求項1から7のいずれか一つに記載の背面密着フィルム。
- 前記フィラーはシリカフィラーである、請求項8に記載の背面密着フィルム。
- 基材および粘着剤層を含む積層構造を有するダイシングテープと、
前記粘着剤層に剥離可能に密着している、請求項1から9のいずれか一つに記載の背面密着フィルムとを備える、ダイシングテープ一体型背面密着フィルム。
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