JP2020101706A - 半導体背面密着フィルム - Google Patents
半導体背面密着フィルム Download PDFInfo
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- JP2020101706A JP2020101706A JP2018240224A JP2018240224A JP2020101706A JP 2020101706 A JP2020101706 A JP 2020101706A JP 2018240224 A JP2018240224 A JP 2018240224A JP 2018240224 A JP2018240224 A JP 2018240224A JP 2020101706 A JP2020101706 A JP 2020101706A
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Abstract
Description
本発明の半導体背面密着フィルム(単に「背面密着フィルム」と称する場合がある)は、波長550nmにおける直線透過率が20%以下であり、且つ波長1600nmにおける直線透過率が25%未満である。なお、本明細書において、半導体(ワーク)の「表面」とはワークのフリップチップ実装するためのバンプが形成されている面をいい、「背面」とは表面の反対側、すなわちバンプが形成されていない面をいうものとする。そして、「背面密着フィルム」は半導体の背面に密着して用いるフィルムをいい、半導体チップの背面(いわゆる裏面)に保護膜を形成するためのフィルム(半導体裏面保護フィルム)を含む。また、本明細書において、「背面密着フィルム」とは、半導体装置に実装された後もワークの背面に密着しているフィルムであり、後述のダイシングテープやセパレータ等の半導体装置の製造過程で剥離される層は含まれない。本発明の背面密着フィルムは、単層構造であってもよいし、多層構造であってもよい。
本発明の背面密着フィルムは、基材と粘着剤層とを含む積層構造を有するダイシングテープと、上記ダイシングテープにおける上記粘着剤層に剥離可能に密着している本発明の背面密着フィルムとを備えた形態、すなわち、ダイシングテープ一体型半導体背面密着フィルム(「ダイシングテープ一体型背面密着フィルム」と称する場合がある)として用いられてもよい。なお、上記ダイシングテープ一体型背面密着フィルムを「本発明のダイシングテープ一体型背面密着フィルム」と称する場合がある。本発明の背面密着フィルムをダイシングテープ一体型背面密着フィルムとして用いた場合、基板に貼付する際にシワをより生じにくくすることができる。
ダイシングテープにおける基材は、ダイシングテープやダイシングテープ一体型背面密着フィルムにおいて支持体として機能する要素である。基材としては、例えば、プラスチック基材(特にプラスチックフィルム)が挙げられる。上記基材は、単層であってもよいし、同種又は異種の基材の積層体であってもよい。
ダイシングテープにおける粘着剤層は、ダイシングテープ一体型背面密着フィルムの使用過程において外部からの作用によって意図的に粘着力を低減させることが可能な粘着剤層(粘着力低減可能型粘着剤層)であってもよいし、ダイシングテープ一体型背面密着フィルムの使用過程において外部からの作用によっては粘着力がほとんど又は全く低減しない粘着剤層(粘着力非低減型粘着剤層)であってもよく、ダイシングテープ一体型背面密着フィルムを使用して個片化されるワークの個片化の手法や条件等に応じて適宜に選択することができる。粘着剤層は、単層構造を有していてもよいし、多層構造を有していてもよい。
本発明の背面密着フィルムの一実施形態である背面密着フィルム10は、例えば、次の通りにして製造される。
本発明のダイシングテープ一体型背面密着フィルムの一実施形態であるダイシングテープ一体型背面密着フィルム1は、例えば、次の通りにして製造される。
本発明のダイシングテープ一体型背面密着フィルムを用いて、半導体装置を製造することができる。具体的には、本発明のダイシングテープ一体型背面密着フィルムにおける背面密着フィルム側(特に接着剤層側)にワーク背面を貼り付ける工程(貼付工程)と、少なくともワークを含む対象を切削することにより個片化された半導体チップを得る工程(ダイシング工程)とを含む製造方法により、半導体装置を製造することができる。なお、図4〜7は、図3に示すダイシングテープ一体型背面密着フィルム1を用いた半導体装置の製造方法における工程を表す。
上記貼付工程において本発明のダイシングテープ一体型背面密着フィルムにおける背面密着フィルム側(特に接着剤層側)に貼り付けるワークとしては、半導体ウエハや、複数の半導体チップがそれぞれ背面及び/又は側面が樹脂により封止された封止体等が挙げられる。そして、例えば図4(a)に示すように、ウエハ加工用テープT1に保持された半導体ウエハ40を、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10(特に、接着剤層11)に対して貼り合わせる。半導体ウエハ40の表面には、フリップチップ実装するためのバンプ(図示略)が備えられている。この後、図4(b)に示すように、半導体ウエハ40からウエハ加工用テープT1を剥がす。
本発明の背面密着フィルム又は当該フィルム中の接着剤層が熱硬化性を有する場合、上記貼付工程の後に、背面密着フィルムを熱硬化させる工程(熱硬化工程)を有することが好ましい。例えば、上記熱硬化工程では、接着剤層11を熱硬化させるための加熱処理を行う。加熱温度は、80〜200℃が好ましく、より好ましくは100〜150℃である。加熱時間は、0.5〜5時間が好ましく、より好ましくは1〜3時間である。加熱処理は、具体的には例えば120℃で2時間行う。熱硬化工程では、接着剤層11の熱硬化により、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10と半導体ウエハ40との密着力が高まり、ダイシングテープ一体型背面密着フィルム1及び本発明の背面密着フィルム10の対半導体ウエハ固定保持力が高まる。また、本発明の背面密着フィルムが熱硬化性を有しない場合、例えば50〜100℃の範囲で数時間ベーキング処理してもよく、これにより、背面密着フィルム界面の濡れ性が向上し、対半導体ウエハ固定保持力が高まる。
上記半導体装置の製造方法は、背面密着フィルムに対し、ダイシングテープの基材側からレーザーを照射してレーザーマーキングを行う工程(レーザーマーキング工程)を有することが好ましい。上記熱硬化工程を行う場合、レーザーマーキング工程は、上記熱硬化工程の後に行うことが好ましい。具体的には、レーザーマーキング工程では、例えばレーザーマーク層12に対し、ダイシングテープ20の基材21の側からレーザーを照射してレーザーマーキングを行う。このレーザーマーキング工程によって、半導体チップごとに、文字情報や図形情報等の各種情報を刻印することができる。レーザーマーキング工程では、一のレーザーマーキングプロセスにおいて、複数の半導体チップに対して一括的に効率よくレーザーマーキングを行うことが可能である。レーザーマーキング工程で用いられるレーザーとしては、例えば、気体レーザー、固体レーザーが挙げられる。気体レーザーとしては、例えば、炭酸ガスレーザー(CO2レーザー)、エキシマレーザーが挙げられる。固体レーザーとしては、例えばNd:YAGレーザーが挙げられる。
上記ダイシング工程では、例えば図5に示すように、ダイシングテープ一体型背面密着フィルム1における粘着剤層22上にダイシングテープを押さえつけ固定するためのフレーム(ダイシングフレーム)51を貼り付けてダイシング装置の保持具52に保持させた後、上記ダイシング装置の備えるダイシングブレードによる切削加工を行う。図5では、切削箇所を模式的に太線で表す。ダイシング工程では、半導体ウエハが半導体チップ41に個片化され、これとともに、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10が小片のフィルム10’に切断される。これにより、フィルム10’を伴う半導体チップ41、即ちフィルム10’付き半導体チップ41が得られる。
上記半導体装置の製造方法は、基材側から粘着剤層に対して放射線を照射する工程(放射線照射工程)を有していてもよい。ダイシングテープの粘着剤層が放射線硬化性粘着剤により形成された層である場合には、ダイシングテープ一体型背面密着フィルムの製造過程での上述の放射線照射に代えて、上述のダイシング工程の後に、基材の側から粘着剤層に対して紫外線等の放射線を照射してもよい。照射量は、例えば50〜500mJ/cm2である。ダイシングテープ一体型背面密着フィルムにおいて粘着剤層の粘着力低減措置としての照射が行われる領域(図3に示す照射領域R)は、例えば、粘着剤層における背面密着フィルム貼り合わせ領域内のその周縁部を除く領域である。
上記半導体装置の製造方法は、フィルム付き半導体チップをピックアップする工程(ピックアップ工程)を有することが好ましい。上記ピックアップ工程は、例えばフィルム10’付き半導体チップ41を伴うダイシングテープ20における半導体チップ41側を水等の洗浄液を使用して洗浄するクリーニング工程や、フィルム10’付き半導体チップ41間の離隔距離を広げるためのエキスパンド工程を、必要に応じて経た後に行ってもよい。例えば、図6に示すように、フィルム10’付き半導体チップ41をダイシングテープ20からピックアップする。例えば、ダイシングフレーム51付きのダイシングテープ20を装置の保持具52に保持させた状態で、ピックアップ対象のフィルム10’付き半導体チップ41について、ダイシングテープ20の図中下側においてピックアップ機構のピン部材53を上昇させてダイシングテープ20を介して突き上げた後、吸着治具54によって吸着保持する。ピックアップ工程において、ピン部材53の突き上げ速度は例えば1〜100mm/秒であり、ピン部材53の突き上げ量は例えば50〜3000μmである。
上記半導体装置の製造方法は、ピックアップ工程を経た後、フィルム付き半導体チップ41をフリップチップ実装する工程(フリップチップ工程)を有することが好ましい。例えば、図7に示すようにフィルム10’付き半導体チップ41が実装基板61に対してフリップチップ実装される。実装基板61としては、例えば、リードフレーム、TAB(Tape Automated Bonding)フィルム、配線基板が挙げられる。フリップチップ実装により、半導体チップ41は、実装基板61に対してバンプ62を介して電気的に接続される。具体的には、半導体チップ41がその回路形成面側に有する基板(電極パッド)(図示略)と実装基板61の有する端子部(図示略)とが、バンプ62を介して電気的に接続される。バンプ62は、例えばハンダバンプである。また、チップ41と実装基板61との間には、熱硬化性のアンダーフィル剤63が介在している。
アクリル樹脂(商品名「テイサンレジン SG−P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI−3000−4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851−SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO−25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、可視光吸収黒系染料(商品名「OIL BLACK BS」、オリエント化学工業株式会社製)1質量部と、赤外線吸収顔料(重金属酸化物系着色剤、極大吸収波長:1600nm、平均粒径:20nm)20質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度36質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒させ、PETセパレータ上に厚さ25μmの半導体背面密着フィルム(熱硬化性の半導体背面密着フィルム)を作製した。
赤外線吸収染料の配合量を表1に示すように変更したこと以外は実施例1と同様にして背面密着フィルムを作製した。
(レーザーマーク層の作製)
アクリル樹脂(商品名「テイサンレジン SG−P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI−3000−4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851−SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO−25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、可視光吸収黒系染料(商品名「OIL BLACK BS」、オリエント化学工業株式会社製)1質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒及び熱硬化させ、PETセパレータ上に厚さ12.5μmのレーザーマーク層(熱硬化済み層)を作製した。
アクリル樹脂(商品名「テイサンレジン SG−P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI−3000−4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851−SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO−25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、赤外線吸収顔料(重金属酸化物系着色剤、極大吸収波長:1600nm、平均粒径:20nm)40質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒させ、PETセパレータ上に厚さ12.5μmの接着剤層を作製した。
赤外線吸収顔料を用いなかったこと以外は実施例1と同様にして背面密着フィルムを作製した。
可視光吸収黒系染料を用いなかったこと以外は実施例1と同様にして背面密着フィルムを作製した。
実施例及び比較例で得られた背面密着フィルムに関し、以下の評価を行った。結果を表1に示す。
実施例及び比較例で得られた25μmの背面密着フィルムについて、紫外可視近赤外分光光度計(商品名「V−670」、日本分光株式会社製)のフィルムユニットを用いて、550nm及び1600nmを含む波長域における透過率(吸光度)スペクトルを測定し、直線透過率を算出した。
実施例及び比較例で得られた背面密着フィルムについて、紫外可視近赤外分光光度計(商品名「V−670」、日本分光株式会社製)にフィルムユニットを用いて透過率スペクトルを測定した。そして、遮光性について、波長1600nmにおける直線透過率が20%未満である場合を○、20%以上である場合を×として評価した。
実施例及び比較例で得られた背面密着フィルムをダイシングテープに貼り合わせてダイシングテープ一体型背面密着フィルムを作製し、ダイシングテープ越しに波長532nmのグリーンレーザーで背面密着フィルムに印字した。そして、印字された文字を、マイクロスコープを用いた暗視野観察において視認可能が容易(コントラストが明瞭)であること、及び気泡が発生しないことの両方の基準を満たす場合を○、少なくともどちらかの基準を満たさない場合を×として評価した。
10 本発明の背面密着フィルム
11 接着剤層
12 レーザーマーク層
20 ダイシングテープ
21 基材
22 粘着剤層
30 セパレータ
40 半導体ウエハ
41 半導体チップ
Claims (7)
- 波長550nmにおける直線透過率が20%以下であり、且つ波長1600nmにおける直線透過率が25%未満である半導体背面密着フィルム。
- 500〜2000nmの波長域において850nm以上に極大吸収波長を有する赤外線吸収剤を含む請求項1に記載の半導体背面密着フィルム。
- 前記赤外線吸収剤の含有割合が0.2〜30質量%である請求項2に記載の半導体背面密着フィルム。
- 350〜700nmの波長領域に吸光度の極大値を有する可視光吸収染料を含む請求項1〜3のいずれか1項に記載の半導体背面密着フィルム。
- 前記可視光吸収染料の含有割合が0.05〜10質量%である請求項4に記載の半導体背面密着フィルム。
- エポキシ樹脂及びアクリル樹脂を含む請求項1〜5のいずれか1項に記載の半導体背面密着フィルム。
- フィラーを含む請求項1〜6のいずれか1項に記載の半導体背面密着フィルム。
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