JP2019205014A - 光通信機 - Google Patents
光通信機 Download PDFInfo
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- JP2019205014A JP2019205014A JP2018097463A JP2018097463A JP2019205014A JP 2019205014 A JP2019205014 A JP 2019205014A JP 2018097463 A JP2018097463 A JP 2018097463A JP 2018097463 A JP2018097463 A JP 2018097463A JP 2019205014 A JP2019205014 A JP 2019205014A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 74
- 238000004891 communication Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000004804 winding Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 11
- 230000001427 coherent effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1206—Inductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1424—Operational amplifier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
図3は、第1の実施形態の光通信機の一部構成の回路図を表す図であり、図4は光通信機の一部構成のパタン図である。図3において、(a)は上面図であり、(b)は側面図である。本実施形態では、光通信機として光素子を搭載したコヒーレント光受信機(単に「光受信機」ともいう)を例に挙げて説明するが、光送受信機として構成することもできる。図3、4には、光受信機の一部構成として、サブパッケージとしての基板100上に、光半導体10およびTIA(Transimpedance amplifier)‐IC20とが互いに接続されて搭載された構成のみが示されている。光受信機としては、図3、4で示された構成以外にも、PLCで形成された光回路(DPOH: dual polarization optical hyprid)(図3のDPOH70)や既知の他のモジュールが搭載されているがこれらの説明は省略する。図3、4の例では、4チャンネルのうちの1チャンネルのみの構成を表したものになっており、これらの回路図やパタン図の1チャンネルのみに表現された構成をその他の3チャンネルにも同様に形成することができる。また、図4(b)の側面図には、図示下面において形成されるPDや配線パタンやパッド(端子)などは省略して示されている。光半導体10およびTIA−IC20が搭載されるサブパッケージは、シリコン等の基板100でなく、セラミック等の筐体であってもよい。
10 光半導体
11a、11b PD
S1、S2 信号端子
S3、S4 電源端子
L1、L2 インダクタ
L3、L4 インダクタ連結部
12a、12b、12c、12d(12) グランド配線
G1、G2 グランド端子
20 TIA‐IC
21 TIA
T1、T2 信号端子
T3、T4 信号出力端子
Claims (5)
- 複数の信号チャンネルのそれぞれにおいて、差動光信号を受光して差動電流信号を出力する1対のフォトダイオードを搭載した光半導体と、前記光半導体からの差動電流信号を電圧信号に変換するトランスインピーダンスアンプを搭載したICとがフリップチップ接続された基板を含むサブパッケージをサブアセンブリとして備えた光通信機であって、
前記光半導体には、1対のフォトダイオードのそれぞれに1対インダクタが形成され、かつ該形成された1対のインダクタを取り囲むようにグランド配線が形成されていることを特徴とする光通信機。 - 前記1対のインダクタは、スパイラル形状またはメアンダ形状に形成されており、巻き線の方向が同じ方向に形成されていることを特徴とする請求項1に記載の光通信機。
- 前記1対のインダクタのぞれぞれは、複数のインダクタ部が直列に接続されて設けられていることを特徴とする請求項1または2に記載の光通信機。
- 前記1対のインダクタは、前記差動電流信号の進行方向における位置を互いにずらして設けられていることを特徴とする請求項1または2に記載の光通信機。
- 前記グランド配線は、同じ信号チャンネルの前記1対のフォトダイオードも共に取り囲むように形成されていることを特徴とする請求項1から4のいずれかに記載の光通信機。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018097463A JP6806733B2 (ja) | 2018-05-21 | 2018-05-21 | 光通信機 |
PCT/JP2019/019320 WO2019225440A1 (ja) | 2018-05-21 | 2019-05-15 | 光通信機 |
US17/057,590 US11342318B2 (en) | 2018-05-21 | 2019-05-15 | Optical communication apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018097463A JP6806733B2 (ja) | 2018-05-21 | 2018-05-21 | 光通信機 |
Publications (2)
Publication Number | Publication Date |
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JP2019205014A true JP2019205014A (ja) | 2019-11-28 |
JP6806733B2 JP6806733B2 (ja) | 2021-01-06 |
Family
ID=68616711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018097463A Active JP6806733B2 (ja) | 2018-05-21 | 2018-05-21 | 光通信機 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11342318B2 (ja) |
JP (1) | JP6806733B2 (ja) |
WO (1) | WO2019225440A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023047599A1 (ja) * | 2021-09-27 | 2023-03-30 | 日本電信電話株式会社 | 光通信器 |
WO2023112165A1 (ja) * | 2021-12-14 | 2023-06-22 | 日本電信電話株式会社 | 受光素子 |
JP7376559B2 (ja) | 2021-11-26 | 2023-11-08 | アンリツ株式会社 | 光電気変換モジュールおよびそれを用いた光サンプリングオシロスコープ |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7372557B2 (ja) * | 2019-12-16 | 2023-11-01 | 日本電信電話株式会社 | 光受信回路 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07250035A (ja) * | 1994-03-14 | 1995-09-26 | Toshiba Corp | 光受信器 |
JP2004336749A (ja) * | 2003-04-30 | 2004-11-25 | Agilent Technol Inc | 改良された電源電圧除去機能を有するフォトアンプ回路 |
JP2012235376A (ja) * | 2011-05-06 | 2012-11-29 | Sumitomo Electric Ind Ltd | 電子回路及び光受光回路 |
JP2013157806A (ja) * | 2012-01-30 | 2013-08-15 | Sumitomo Electric Ind Ltd | 信号増幅回路 |
JP2014146737A (ja) * | 2013-01-30 | 2014-08-14 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオードアレイおよびその製造方法 |
JP2016092303A (ja) * | 2014-11-07 | 2016-05-23 | 日立金属株式会社 | 並列光モジュール |
JP2019110173A (ja) * | 2017-12-15 | 2019-07-04 | 日本電信電話株式会社 | 光受信器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US8289067B2 (en) * | 2009-09-14 | 2012-10-16 | Luxtera Inc. | Method and system for bandwidth enhancement using hybrid inductors |
US9048956B2 (en) * | 2010-11-18 | 2015-06-02 | Nec Corporation | Coherent optical receiver device and coherent optical receiving method |
JP5842393B2 (ja) * | 2011-06-10 | 2016-01-13 | 富士通株式会社 | 受光デバイス、これを用いた光受信機、及び受光デバイスの製造方法 |
US9064981B2 (en) * | 2013-03-26 | 2015-06-23 | Excelitas Canada, Inc. | Differential optical receiver for avalanche photodiode and SiPM |
US10495831B2 (en) * | 2016-08-26 | 2019-12-03 | Macom Technology Solutions Holdings, Inc. | Communication receiver |
-
2018
- 2018-05-21 JP JP2018097463A patent/JP6806733B2/ja active Active
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2019
- 2019-05-15 US US17/057,590 patent/US11342318B2/en active Active
- 2019-05-15 WO PCT/JP2019/019320 patent/WO2019225440A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07250035A (ja) * | 1994-03-14 | 1995-09-26 | Toshiba Corp | 光受信器 |
JP2004336749A (ja) * | 2003-04-30 | 2004-11-25 | Agilent Technol Inc | 改良された電源電圧除去機能を有するフォトアンプ回路 |
JP2012235376A (ja) * | 2011-05-06 | 2012-11-29 | Sumitomo Electric Ind Ltd | 電子回路及び光受光回路 |
JP2013157806A (ja) * | 2012-01-30 | 2013-08-15 | Sumitomo Electric Ind Ltd | 信号増幅回路 |
JP2014146737A (ja) * | 2013-01-30 | 2014-08-14 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオードアレイおよびその製造方法 |
JP2016092303A (ja) * | 2014-11-07 | 2016-05-23 | 日立金属株式会社 | 並列光モジュール |
JP2019110173A (ja) * | 2017-12-15 | 2019-07-04 | 日本電信電話株式会社 | 光受信器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023047599A1 (ja) * | 2021-09-27 | 2023-03-30 | 日本電信電話株式会社 | 光通信器 |
JP7376559B2 (ja) | 2021-11-26 | 2023-11-08 | アンリツ株式会社 | 光電気変換モジュールおよびそれを用いた光サンプリングオシロスコープ |
WO2023112165A1 (ja) * | 2021-12-14 | 2023-06-22 | 日本電信電話株式会社 | 受光素子 |
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US11342318B2 (en) | 2022-05-24 |
WO2019225440A1 (ja) | 2019-11-28 |
JP6806733B2 (ja) | 2021-01-06 |
US20210193638A1 (en) | 2021-06-24 |
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