JP2004336749A - 改良された電源電圧除去機能を有するフォトアンプ回路 - Google Patents
改良された電源電圧除去機能を有するフォトアンプ回路 Download PDFInfo
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- H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H03—ELECTRONIC CIRCUITRY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0001—Technical content checked by a classifier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45631—Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45722—Indexing scheme relating to differential amplifiers the LC comprising one or more source followers, as post buffer or driver stages, in cascade in the LC
Abstract
【解決手段】改良された電源電圧除去機能を有する対称型フォトアンプ回路100は、信号回路170と基準回路175を有し、結合線と基板のような機械的なソースに由来する電気的容量と寄生容量は、信号回路170と基準回路175の間で整合される。
【効果】給電線路上に重畳した雑音信号の同相成分完全差動増幅器で取り除くことができる。
【選択図】図3
Description
20 フォトダイオード
25 給電線路
100 対称形光電増幅器回路(対称形フォトアンプ)
110,110a〜110(n) 能動フォトダイオード(光検出器)
115 基準フォトダイオード(光検出器)
170 信号回路
175 基準回路
500 雑音信号
Claims (10)
- フォトアンプ回路(100)において、
信号回路(170)であって、光信号(15)と該信号回路(170)への給電線路(25)上の雑音信号(500)を受信して、前記光信号(15)と前記雑音信号(500)から出力信号を生成するよう結合され、インダクタンスと寄生容量を含む第1の機械的信号源を含むことからなる、信号回路と、
前記雑音信号(500)を受信し、前記雑音信号(500)から基準信号を生成するよう結合された基準回路(175)であって、インダクタンスと寄生容量を含む第2の機械的信号源を含むことからなる、基準回路
を備え、
前記第1と第2の機械的信号源が互いに整合することからなる、フォトアンプ回路。 - 前記信号回路(170)と前記基準回路(175)に結合され、前記出力信号と前記基準信号を受信して差動信号(530)を出力する対称形増幅器回路(150)であって、前記差動信号(530)から前記雑音信号(500)を同相除去するよう接続された対称形増幅器回路をさらに備える、請求項1記載のフォトアンプ回路(100)。
- 前記信号回路(170)が能動光検出器(110)を備え、前記基準回路(175)が基準光検出器(115)を備える請求項2記載のフォトアンプ回路(100)であって、前記第1の光検出器(110)と第2の光検出器(115)は電気的に類似することからなる、フォトアンプ回路。
- 前記信号回路(170)は、前記出力信号の処理のために前記第1の光検出器(110)と前記対称形増幅器回路(50)の間に結合された第1の信号路(132,134)を備え、該第1の信号路(132,134)がインダクタンスと寄生容量を含む前記第1の機械的信号源を含み、
前記基準回路(175)は、前記基準信号の処理のために前記第2の検出器(115)と前記対称形増幅器回路(150)の間に結合された第2の信号路(136,138)を備え、該第2の信号路(136,138)がインダクタンスと寄生容量を含む前記第2の機械的信号源を備える、請求項3記載のフォトアンプ回路(100)。 - 前記第1及び第2の機械的信号源は、前記光検出器(110,115)と前記対称形増幅器回路(150)の間の結合線(200)を有し、前記第1の信号路(132,134)内の前記結合線(200)の長さが前記第2の信号路(136,138)内の前記結合線(200)の長さに一致する、請求項4記載のフォトアンプ(100)。
- 前記出力信号は第1の電流(510と515)であり、前記基準信号は第2の電流(515)であり、
前記対称形増幅器回路(150)は、
前記第1の電流(510と515)を受け、該第1の電流(510と515)を第1の電圧(520と525)へ変換するよう接続された第1のトランスインピーダンスアンプ(130)と、
前記第2の電流(515)を受け、該第2の電流(515)を第2の電圧(525)へ変換するよう接続された第2のトランスインピーダンスアンプ(135)とを備えることからなる、請求項2記載のフォトアンプ回路(100)。 - 前記第1の電圧が前記光信号(15)を表わす第1の電圧成分(520)と前記雑音信号(500)を表わす第2の電圧成分(525)を有しており、前記第2の電圧は前記第2の電圧成分(525)にほぼ等しく、
前記対称形増幅器回路(150)がさらに、前記第1の電圧(520と525)と前記第2の電圧(525)を受け、該第2の電圧成分(525)を同相除去するとともに前記第1の電圧成分(520)を増幅するよう接続された差動増幅器回路(140)をさらに備えることからなる、請求項6記載のフォトアンプ回路(100)。 - 前記光信号(15)はギガビット/秒の範囲内にある、請求項1記載のフォトアンプ回路(100)。
- 光信号(15)を受信し、該光信号(15)の強度を示す電気信号を生成する光受信器(600)において、
前記光信号(15)と雑音信号(500)を受信し、前記光信号(15)と前記雑音信号(500)から第1の電気信号を生成するよう接続された第1の信号路(132,134)であって、インダクタンスと寄生容量を含む第1の機械的信号源を含むことからなる第1の信号路と、
前記雑音信号(500)を受信し、前記雑音信号(500)から第2の電気信号を生成するように接続された第2の信号路(136,138)であって、インダクタンスと寄生容量を含む第2の機械的信号源を含み、前記第1と第2の機械的信号源が互いに整合することからなる、第2の信号路と、
前記第1の電気信号及び前記第2の電気信号を受信し、第3の電気信号(530)を出力するよう結合された差動増幅器回路(140)であって、該第3の電気信号(530)からの前記雑音信号(500)を同相除去するよう接続された差動増幅器回路
を備える、光受信器。 - 光信号(15)の強度を表わす電気信号の生成方法であって、
第1の信号路(132,134)と第2の信号路(136,138)に沿うインダクタンスと寄生容量を含む機械的信号源を整合させるステップと、
前記光信号(15)と雑音信号(500)を受信するステップと、
前記光信号(15)と前記雑音信号(500)から前記第1の信号路(132,134)上に第1の電気信号を生成するステップと、
前記雑音信号(500)から前記第2の信号路(136,138)上に第2の電気信号を生成するステップと、
前記第1の電気信号と前記第2の電気信号を差動増幅器回路(140)へ供給し、前記第1の電気信号から前記雑音信号(500)を同相除去するステップ
を含む、方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/426,744 US6781468B1 (en) | 2003-04-30 | 2003-04-30 | Photo-amplifier circuit with improved power supply rejection |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004336749A true JP2004336749A (ja) | 2004-11-25 |
JP2004336749A5 JP2004336749A5 (ja) | 2007-06-14 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2004131336A Withdrawn JP2004336749A (ja) | 2003-04-30 | 2004-04-27 | 改良された電源電圧除去機能を有するフォトアンプ回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6781468B1 (ja) |
EP (1) | EP1473830A3 (ja) |
JP (1) | JP2004336749A (ja) |
CN (1) | CN100477503C (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8222590B2 (en) | 2007-03-29 | 2012-07-17 | Nec Corporation | Signal amplifier for optical receiver circuit |
JP2019205014A (ja) * | 2018-05-21 | 2019-11-28 | 日本電信電話株式会社 | 光通信機 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US7554072B2 (en) * | 2004-09-15 | 2009-06-30 | Siemens Energy & Automation, Inc. | Amplifier configuration with noise reduction for a photodiode |
US7265631B2 (en) * | 2005-03-12 | 2007-09-04 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Transimpedance amplifier with signal amplification circuit that performs power signal regulation |
JP4928743B2 (ja) * | 2005-06-02 | 2012-05-09 | 株式会社東芝 | 光信号受信回路 |
KR100983563B1 (ko) * | 2006-02-17 | 2010-09-27 | 피니사 코포레이숀 | 신호 피드백을 방지하기 위한 광수신기에서의 이산 부트스트랩핑 |
US7786738B2 (en) * | 2007-09-19 | 2010-08-31 | Robert Bosch Gmbh | Cancelling low frequency errors in MEMS systems |
US8161430B2 (en) * | 2008-04-22 | 2012-04-17 | Qualcomm Incorporated | System and method of resistance based memory circuit parameter adjustment |
CN101789825B (zh) * | 2009-01-22 | 2012-12-26 | 宁波环球广电科技有限公司 | 光接收模块 |
JP5994344B2 (ja) * | 2012-04-04 | 2016-09-21 | ソニー株式会社 | 固体撮像装置、電子機器 |
US9432126B1 (en) * | 2014-06-25 | 2016-08-30 | Rockwell Collins, Inc. | Reconfigurable filter |
CN107966167B (zh) * | 2016-10-19 | 2020-06-26 | 上海云杉信息科技有限公司 | 一种光信号接收装置和光电检测设备 |
CN109031393B (zh) | 2017-06-09 | 2020-07-28 | 京东方科技集团股份有限公司 | 光电探测电路以及光电探测器 |
EP3499712B1 (en) | 2017-10-19 | 2020-11-04 | Shenzhen Goodix Technology Co., Ltd. | Signal conversion circuit, heart rate sensor, and electronic device |
CN110166005B (zh) * | 2019-06-12 | 2021-10-08 | 中国科学院武汉物理与数学研究所 | 一种对称式低噪声隔离分配放大电路 |
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-
2003
- 2003-04-30 US US10/426,744 patent/US6781468B1/en not_active Expired - Lifetime
- 2003-12-18 EP EP03029343A patent/EP1473830A3/en not_active Withdrawn
-
2004
- 2004-01-29 CN CNB2004100004475A patent/CN100477503C/zh not_active Expired - Fee Related
- 2004-04-27 JP JP2004131336A patent/JP2004336749A/ja not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8222590B2 (en) | 2007-03-29 | 2012-07-17 | Nec Corporation | Signal amplifier for optical receiver circuit |
JP2019205014A (ja) * | 2018-05-21 | 2019-11-28 | 日本電信電話株式会社 | 光通信機 |
WO2019225440A1 (ja) * | 2018-05-21 | 2019-11-28 | 日本電信電話株式会社 | 光通信機 |
Also Published As
Publication number | Publication date |
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US6781468B1 (en) | 2004-08-24 |
CN1543060A (zh) | 2004-11-03 |
CN100477503C (zh) | 2009-04-08 |
EP1473830A3 (en) | 2005-12-21 |
EP1473830A2 (en) | 2004-11-03 |
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