JP2019184681A5 - - Google Patents

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Publication number
JP2019184681A5
JP2019184681A5 JP2018071919A JP2018071919A JP2019184681A5 JP 2019184681 A5 JP2019184681 A5 JP 2019184681A5 JP 2018071919 A JP2018071919 A JP 2018071919A JP 2018071919 A JP2018071919 A JP 2018071919A JP 2019184681 A5 JP2019184681 A5 JP 2019184681A5
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JP
Japan
Prior art keywords
mark
resist film
forming
exposure apparatus
unit
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JP2018071919A
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English (en)
Japanese (ja)
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JP6814174B2 (ja
JP2019184681A (ja
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Priority claimed from JP2018071919A external-priority patent/JP6814174B2/ja
Priority to JP2018071919A priority Critical patent/JP6814174B2/ja
Priority to TW108109682A priority patent/TWI726294B/zh
Priority to KR1020190036754A priority patent/KR102520399B1/ko
Priority to US16/371,271 priority patent/US11187993B2/en
Priority to CN201910263549.2A priority patent/CN110347015B/zh
Priority to CN202210113165.4A priority patent/CN114488709B/zh
Publication of JP2019184681A publication Critical patent/JP2019184681A/ja
Publication of JP2019184681A5 publication Critical patent/JP2019184681A5/ja
Publication of JP6814174B2 publication Critical patent/JP6814174B2/ja
Application granted granted Critical
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JP2018071919A 2018-04-03 2018-04-03 露光装置、物品の製造方法、マーク形成装置及びマーク形成方法 Active JP6814174B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018071919A JP6814174B2 (ja) 2018-04-03 2018-04-03 露光装置、物品の製造方法、マーク形成装置及びマーク形成方法
TW108109682A TWI726294B (zh) 2018-04-03 2019-03-21 曝光裝置及製造物品的方法
KR1020190036754A KR102520399B1 (ko) 2018-04-03 2019-03-29 노광 장치 및 물품 제조 방법
US16/371,271 US11187993B2 (en) 2018-04-03 2019-04-01 Exposure apparatus and method of manufacturing article
CN201910263549.2A CN110347015B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法
CN202210113165.4A CN114488709B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018071919A JP6814174B2 (ja) 2018-04-03 2018-04-03 露光装置、物品の製造方法、マーク形成装置及びマーク形成方法

Publications (3)

Publication Number Publication Date
JP2019184681A JP2019184681A (ja) 2019-10-24
JP2019184681A5 true JP2019184681A5 (enExample) 2020-08-20
JP6814174B2 JP6814174B2 (ja) 2021-01-13

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JP2018071919A Active JP6814174B2 (ja) 2018-04-03 2018-04-03 露光装置、物品の製造方法、マーク形成装置及びマーク形成方法

Country Status (5)

Country Link
US (1) US11187993B2 (enExample)
JP (1) JP6814174B2 (enExample)
KR (1) KR102520399B1 (enExample)
CN (2) CN110347015B (enExample)
TW (1) TWI726294B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7426845B2 (ja) * 2020-02-14 2024-02-02 キヤノン株式会社 計測方法、露光方法、物品の製造方法、プログラム及び露光装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307449A (ja) * 1998-02-20 1999-11-05 Canon Inc 露光装置及びデバイスの製造方法
JP4618859B2 (ja) 2000-10-10 2011-01-26 東レエンジニアリング株式会社 積層ウエハーのアライメント方法
US6678038B2 (en) 2001-08-03 2004-01-13 Nikon Corporation Apparatus and methods for detecting tool-induced shift in microlithography apparatus
US6838217B1 (en) 2002-06-06 2005-01-04 Taiwan Semiconductor Manufacturing Company Define overlay dummy pattern in mark shielding region to reduce wafer scale error caused by metal deposition
TW587200B (en) * 2002-10-24 2004-05-11 Taiwan Semiconductor Mfg Method for improving intrafield overlay accuracy
US7256865B2 (en) * 2003-10-24 2007-08-14 Asml Holding N.V. Methods and apparatuses for applying wafer-alignment marks
US7906270B2 (en) * 2005-03-23 2011-03-15 Asml Netherlands B.V. Reduced pitch multiple exposure process
US7981595B2 (en) * 2005-03-23 2011-07-19 Asml Netherlands B.V. Reduced pitch multiple exposure process
WO2008071296A1 (en) 2006-12-15 2008-06-19 Carl Zeiss Sms Gmbh Method and apparatus for determining the position of a structure on a carrier relative to a reference point of the carrier
SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
US20100063764A1 (en) * 2008-09-10 2010-03-11 Limin Lou Use of different pairs of overlay layers to check an overlay measurement recipe
JP2010079113A (ja) * 2008-09-28 2010-04-08 Hoya Corp フォトマスクの製造方法及びフォトマスク
JP2010267931A (ja) * 2009-05-18 2010-11-25 Toshiba Corp パターン形成方法およびパターン設計方法
JP5935804B2 (ja) * 2011-09-01 2016-06-15 旭硝子株式会社 反射型マスクブランク及び反射型マスクブランクの製造方法
US9442392B2 (en) * 2012-12-17 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Scanner overlay correction system and method
US8889434B2 (en) * 2012-12-17 2014-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Scanner overlay correction system and method
WO2016037003A1 (en) * 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
CN105573068B (zh) 2014-10-10 2019-11-05 中芯国际集成电路制造(上海)有限公司 光刻胶去除方法和光刻工艺的返工方法
EP3447580A1 (en) * 2017-08-21 2019-02-27 ASML Netherlands B.V. Method of calibrating focus measurements, measurement method and metrology apparatus, lithographic system and device manufacturing method

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