JP2019169579A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2019169579A
JP2019169579A JP2018055445A JP2018055445A JP2019169579A JP 2019169579 A JP2019169579 A JP 2019169579A JP 2018055445 A JP2018055445 A JP 2018055445A JP 2018055445 A JP2018055445 A JP 2018055445A JP 2019169579 A JP2019169579 A JP 2019169579A
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Japan
Prior art keywords
copper
semiconductor device
semiconductor
thickness
electrode
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Pending
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JP2018055445A
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English (en)
Japanese (ja)
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JP2019169579A5 (https=
Inventor
誠治 犬宮
Seiji Inumiya
誠治 犬宮
須黒　恭一
Kyoichi Suguro
恭一 須黒
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to JP2018055445A priority Critical patent/JP2019169579A/ja
Priority to US15/998,401 priority patent/US10985104B2/en
Publication of JP2019169579A publication Critical patent/JP2019169579A/ja
Publication of JP2019169579A5 publication Critical patent/JP2019169579A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
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    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H10W20/4424—Copper alloys
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    • H10W40/00—Arrangements for thermal protection or thermal control
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    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H10W72/01955—Changing the shapes of bond pads by using masks
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07651—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
    • H10W72/07652—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/621—Structures or relative sizes of strap connectors
    • H10W72/627—Multiple strap connectors having different structures or shapes
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/641—Dispositions of strap connectors
    • H10W72/646—Dispositions of strap connectors the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector
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    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
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    • H10W72/951—Materials of bond pads
    • H10W72/953—Materials of bond pads not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/732—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having shape changed during the connecting
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2018055445A 2018-03-23 2018-03-23 半導体装置及びその製造方法 Pending JP2019169579A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018055445A JP2019169579A (ja) 2018-03-23 2018-03-23 半導体装置及びその製造方法
US15/998,401 US10985104B2 (en) 2018-03-23 2018-08-15 Semiconductor device having electrode pad and electrode layer intervening semiconductor layer inbetween and manufacturing method thereof

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Application Number Priority Date Filing Date Title
JP2018055445A JP2019169579A (ja) 2018-03-23 2018-03-23 半導体装置及びその製造方法

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JP2019169579A true JP2019169579A (ja) 2019-10-03
JP2019169579A5 JP2019169579A5 (https=) 2020-03-05

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023276104A1 (https=) * 2021-07-01 2023-01-05
WO2024058144A1 (ja) * 2022-09-16 2024-03-21 ヌヴォトンテクノロジージャパン株式会社 半導体装置および実装基板
JP2024041321A (ja) * 2022-09-14 2024-03-27 株式会社東芝 半導体装置
JP2024041320A (ja) * 2022-09-14 2024-03-27 株式会社東芝 半導体装置
JP2024139073A (ja) * 2023-03-27 2024-10-09 株式会社東芝 半導体装置および半導体装置の製造方法
JP7745809B1 (ja) * 2024-03-26 2025-09-29 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法、電力用半導体モジュール及び電力変換装置
JP7851883B2 (ja) 2023-03-27 2026-04-27 株式会社東芝 半導体装置および半導体装置の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115485858A (zh) * 2020-05-08 2022-12-16 罗姆股份有限公司 半导体装置
US20220181290A1 (en) * 2020-12-03 2022-06-09 Semiconductor Components Industries, Llc Clip interconnect with micro contact heads
IT202100021638A1 (it) * 2021-08-10 2023-02-10 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore, dispositivo a semiconduttore e assortimento di dispositivi a semiconduttore corrispondenti
US20240421217A1 (en) * 2023-06-14 2024-12-19 Analog Devices, Inc. Semiconductor device including heat shield
TWI881455B (zh) * 2023-09-07 2025-04-21 台星科企業股份有限公司 於晶圓基板背面貼合異質材料的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008305948A (ja) * 2007-06-07 2008-12-18 Denso Corp 半導体装置およびその製造方法
JP2010092895A (ja) * 2008-10-03 2010-04-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2085406B1 (https=) 1970-04-17 1973-10-19 Elf
US3892092A (en) 1974-05-17 1975-07-01 Buehler Ltd Automatic polishing apparatus
KR0144821B1 (ko) 1994-05-16 1998-07-01 양승택 저전원전압으로 작동가능한 갈륨비소 반도체 전력소자의 제조 방법
JP2004071886A (ja) 2002-08-07 2004-03-04 Renesas Technology Corp 縦型パワー半導体装置およびその製造方法
AU2003266560A1 (en) 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
WO2006068082A1 (ja) * 2004-12-22 2006-06-29 Mitsubishi Denki Kabushiki Kaisha 半導体装置
JP5300156B2 (ja) 2008-08-07 2013-09-25 Ｊｘ日鉱日石金属株式会社 無電解めっきにより銅薄膜を形成しためっき物
JP5045613B2 (ja) 2008-08-25 2012-10-10 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法
TW201015718A (en) 2008-10-03 2010-04-16 Sanyo Electric Co Semiconductor device and method for manufacturing the same
JP5428362B2 (ja) 2009-02-04 2014-02-26 富士電機株式会社 半導体装置の製造方法
JP2011077460A (ja) 2009-10-02 2011-04-14 Toyota Motor Corp 半導体装置と、その製造方法
US8502274B1 (en) * 2012-04-06 2013-08-06 Infineon Technologies Ag Integrated circuit including power transistor cells and a connecting line
JP6052742B2 (ja) * 2012-06-29 2016-12-27 パナソニックＩｐマネジメント株式会社 太陽電池モジュール及び太陽電池モジュールの製造方法
JPWO2015029152A1 (ja) 2013-08-28 2017-03-02 株式会社日立製作所 半導体装置
US10109609B2 (en) * 2014-01-13 2018-10-23 Infineon Technologies Austria Ag Connection structure and electronic component
JP2015231033A (ja) * 2014-06-06 2015-12-21 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP6338937B2 (ja) * 2014-06-13 2018-06-06 ローム株式会社 パワーモジュールおよびその製造方法
EP3783662B1 (en) * 2014-09-02 2025-03-12 Flosfia Inc. Laminated structure and method for manufacturing same, semiconductor device, and crystalline film
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008305948A (ja) * 2007-06-07 2008-12-18 Denso Corp 半導体装置およびその製造方法
JP2010092895A (ja) * 2008-10-03 2010-04-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023276104A1 (https=) * 2021-07-01 2023-01-05
JP7750289B2 (ja) 2021-07-01 2025-10-07 住友電気工業株式会社 差動信号伝送用ケーブル
JP7748924B2 (ja) 2022-09-14 2025-10-03 株式会社東芝 半導体装置
JP7791795B2 (ja) 2022-09-14 2025-12-24 株式会社東芝 半導体装置
JP2024041321A (ja) * 2022-09-14 2024-03-27 株式会社東芝 半導体装置
JP2024041320A (ja) * 2022-09-14 2024-03-27 株式会社東芝 半導体装置
JP7518317B1 (ja) * 2022-09-16 2024-07-17 ヌヴォトンテクノロジージャパン株式会社 半導体装置および実装基板
JP7567089B2 (ja) 2022-09-16 2024-10-15 ヌヴォトンテクノロジージャパン株式会社 半導体装置および実装基板
KR20250041181A (ko) 2022-09-16 2025-03-25 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치 및 실장 기판
JP2024125235A (ja) * 2022-09-16 2024-09-13 ヌヴォトンテクノロジージャパン株式会社 半導体装置および実装基板
WO2024058144A1 (ja) * 2022-09-16 2024-03-21 ヌヴォトンテクノロジージャパン株式会社 半導体装置および実装基板
US12575444B2 (en) 2022-09-16 2026-03-10 Nuvoton Technology Corporation Japan Semiconductor device and mounting substrate
JP2024139073A (ja) * 2023-03-27 2024-10-09 株式会社東芝 半導体装置および半導体装置の製造方法
JP7851883B2 (ja) 2023-03-27 2026-04-27 株式会社東芝 半導体装置および半導体装置の製造方法
JP7745809B1 (ja) * 2024-03-26 2025-09-29 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法、電力用半導体モジュール及び電力変換装置
WO2025203223A1 (ja) * 2024-03-26 2025-10-02 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法、電力用半導体モジュール及び電力変換装置

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