JP2019169572A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2019169572A
JP2019169572A JP2018055382A JP2018055382A JP2019169572A JP 2019169572 A JP2019169572 A JP 2019169572A JP 2018055382 A JP2018055382 A JP 2018055382A JP 2018055382 A JP2018055382 A JP 2018055382A JP 2019169572 A JP2019169572 A JP 2019169572A
Authority
JP
Japan
Prior art keywords
region
semiconductor layer
nitride semiconductor
semiconductor device
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2018055382A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019169572A5 (enExample
Inventor
宏暁 林
Hiroaki Hayashi
宏暁 林
誠治 犬宮
Seiji Inumiya
誠治 犬宮
岳 鬼沢
Takeshi Onizawa
岳 鬼沢
絵美子 井上
Emiko Inoue
絵美子 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2018055382A priority Critical patent/JP2019169572A/ja
Priority to US16/120,042 priority patent/US20190296138A1/en
Publication of JP2019169572A publication Critical patent/JP2019169572A/ja
Publication of JP2019169572A5 publication Critical patent/JP2019169572A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2018055382A 2018-03-22 2018-03-22 半導体装置及びその製造方法 Abandoned JP2019169572A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018055382A JP2019169572A (ja) 2018-03-22 2018-03-22 半導体装置及びその製造方法
US16/120,042 US20190296138A1 (en) 2018-03-22 2018-08-31 Semiconductor apparatus and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018055382A JP2019169572A (ja) 2018-03-22 2018-03-22 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2019169572A true JP2019169572A (ja) 2019-10-03
JP2019169572A5 JP2019169572A5 (enExample) 2020-02-27

Family

ID=67985567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018055382A Abandoned JP2019169572A (ja) 2018-03-22 2018-03-22 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US20190296138A1 (enExample)
JP (1) JP2019169572A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397586A (zh) * 2020-11-23 2021-02-23 江苏大学 一种常开型硅衬底高电子迁移率晶体管及其制造方法
CN112397587A (zh) * 2020-11-23 2021-02-23 江苏大学 一种常开型高电子迁移率晶体管及其制造方法
JP2023017194A (ja) * 2021-07-26 2023-02-07 株式会社東芝 半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI646691B (zh) * 2017-11-22 2019-01-01 友達光電股份有限公司 主動元件基板及其製造方法
CN115020490A (zh) * 2022-06-24 2022-09-06 西安电子科技大学广州研究院 一种具有非极性沟道的增强型GaN基HEMT器件及其制备方法
CN116705606A (zh) * 2023-06-29 2023-09-05 润新微电子(大连)有限公司 一种hemt器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436474A (en) * 1993-05-07 1995-07-25 Board Of Regents Of The University Of Texas System Modulation doped field effect transistor having built-in drift field
US7417267B2 (en) * 2004-09-24 2008-08-26 International Rectifier Corporation Non-planar III-nitride power device having a lateral conduction path
JP5245305B2 (ja) * 2007-07-06 2013-07-24 サンケン電気株式会社 電界効果半導体装置及びその製造方法
US7851825B2 (en) * 2007-12-10 2010-12-14 Transphorm Inc. Insulated gate e-mode transistors
JP2012156332A (ja) * 2011-01-26 2012-08-16 Toshiba Corp 半導体素子
CN103460359A (zh) * 2011-04-05 2013-12-18 住友电气工业株式会社 制造氮化物电子设备的方法
CN103582938A (zh) * 2011-06-03 2014-02-12 住友电气工业株式会社 氮化物电子器件、氮化物电子器件的制作方法
TWI496285B (zh) * 2012-12-07 2015-08-11 Richtek Technology Corp 高電子遷移率電晶體及其製造方法
KR20140110616A (ko) * 2013-03-08 2014-09-17 삼성전자주식회사 고 전자이동도 트랜지스터 소자
WO2015004853A1 (ja) * 2013-07-12 2015-01-15 パナソニックＩｐマネジメント株式会社 半導体装置
CN103715086A (zh) * 2013-12-27 2014-04-09 苏州晶湛半导体有限公司 一种增强型器件的制造方法
JP6511645B2 (ja) * 2014-02-13 2019-05-15 パナソニックＩｐマネジメント株式会社 窒化物半導体デバイス
US10090406B2 (en) * 2014-09-18 2018-10-02 Infineon Technologies Austria Ag Non-planar normally off compound semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397586A (zh) * 2020-11-23 2021-02-23 江苏大学 一种常开型硅衬底高电子迁移率晶体管及其制造方法
CN112397587A (zh) * 2020-11-23 2021-02-23 江苏大学 一种常开型高电子迁移率晶体管及其制造方法
CN112397587B (zh) * 2020-11-23 2022-06-21 江苏大学 一种常开型高电子迁移率晶体管及其制造方法
JP2023017194A (ja) * 2021-07-26 2023-02-07 株式会社東芝 半導体装置
JP7534269B2 (ja) 2021-07-26 2024-08-14 株式会社東芝 半導体装置
US12087823B2 (en) 2021-07-26 2024-09-10 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
US20190296138A1 (en) 2019-09-26

Similar Documents

Publication Publication Date Title
CN101211969B (zh) 高速大功率氮化物半导体器件及其制造方法
JP5400266B2 (ja) 電界効果トランジスタ
CN102484076B (zh) Iii族氮化物半导体设备
JP2019169572A (ja) 半導体装置及びその製造方法
JP6152124B2 (ja) 半導体装置の製造方法
US8823055B2 (en) REO/ALO/A1N template for III-N material growth on silicon
JPWO2011102044A1 (ja) エピタキシャル基板およびエピタキシャル基板の製造方法
JP2007059595A (ja) 窒化物半導体素子
JP2011166067A (ja) 窒化物半導体装置
JP5041701B2 (ja) ヘテロ接合型電界効果トランジスタ
WO2012026396A1 (ja) 半導体素子用エピタキシャル基板、半導体素子、半導体素子用エピタキシャル基板の作製方法、および半導体素子の作製方法
WO2011155496A1 (ja) エピタキシャル基板およびエピタキシャル基板の製造方法
US8405067B2 (en) Nitride semiconductor element
US11955519B2 (en) Semiconductor device with strain relaxed layer
CN110491938A (zh) 半导体装置
US9401402B2 (en) Nitride semiconductor device and nitride semiconductor substrate
JP6173493B2 (ja) 半導体素子用のエピタキシャル基板およびその製造方法
JP4888537B2 (ja) Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
JP4897956B2 (ja) 半導体電子デバイス
JP5662184B2 (ja) 半導体素子用のエピタキシャル基板、および半導体素子用エピタキシャル基板の製造方法
JP2010287594A (ja) 電界効果トランジスタ
JP5514231B2 (ja) ヘテロ接合型電界効果トランジスタ
JP2012064977A (ja) Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
JP5036225B2 (ja) ヘテロ接合電界効果型トランジスタ
JP2017143139A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200116

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200116

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20200417