JP2019144448A - 光変調器 - Google Patents
光変調器 Download PDFInfo
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- JP2019144448A JP2019144448A JP2018029445A JP2018029445A JP2019144448A JP 2019144448 A JP2019144448 A JP 2019144448A JP 2018029445 A JP2018029445 A JP 2018029445A JP 2018029445 A JP2018029445 A JP 2018029445A JP 2019144448 A JP2019144448 A JP 2019144448A
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- optical modulator
- semiconductor layer
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- inp
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- 230000003287 optical effect Effects 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000005253 cladding Methods 0.000 claims description 40
- 230000005684 electric field Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 230000000694 effects Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000005697 Pockels effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (8)
- 基板の上に形成されたInPの屈折率以下の屈折率とされた下部クラッド層と、
前記下部クラッド層の上に形成された所望とする波長に対応するバンドギャップのInP系の半導体から構成されたコアと、
前記コアの上に形成されたInPの屈折率以下の屈折率とされた上部クラッド層と、
前記コアに電界を印加する電界印加手段と
を備えることを特徴とする光変調器。 - 請求項1記載の光変調器において、
前記コアは、InGaAsPから構成されていることを特徴とする光変調器。 - 請求項1または2記載の光変調器において、
前記下部クラッド層および前記上部クラッド層は、酸化シリコンから構成されていることを特徴とする光変調器。 - 請求項1〜3のいずれか1項に記載の光変調器において、
前記電界印加手段は、前記基板の平面に水平な方向で前記コアを挾んで形成された第1導電型の第1半導体層および第2導電型の第2半導体層から構成されている
ことを特徴とする光変調器。 - 請求項4記載の光変調器において、
前記コアは、第1導電型の第1コアと第2導電型の第2コアとから構成されていることを特徴とする光変調器。 - 請求項5記載の光変調器において、
前記第1コアおよび前記第2コアは、前記基板の平面に平行な方向に配列された状態で形成されていることを特徴とする光変調器。 - 請求項5記載の光変調器において、
前記第1コアおよび前記第2コアは、前記下部クラッド層の上に積層した状態で形成されていることを特徴とする光変調器。 - 請求項7記載の光変調器において、
前記コアの一方の側において、前記第1半導体層が、前記コアのなかで前記第1コアのみに接して形成され、
前記コアの他方の側において、前記第2半導体層が、前記コアのなかで前記第2コアのみに接して形成されている
ことを特徴とする光変調器。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018029445A JP6922781B2 (ja) | 2018-02-22 | 2018-02-22 | 光変調器 |
PCT/JP2019/004584 WO2019163559A1 (ja) | 2018-02-22 | 2019-02-08 | 光変調器 |
CN201980014478.0A CN111758065B (zh) | 2018-02-22 | 2019-02-08 | 光调制器 |
EP19757241.5A EP3757664B1 (en) | 2018-02-22 | 2019-02-08 | Optical modulator |
US16/971,523 US11747659B2 (en) | 2018-02-22 | 2019-02-08 | Optical modulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018029445A JP6922781B2 (ja) | 2018-02-22 | 2018-02-22 | 光変調器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019144448A true JP2019144448A (ja) | 2019-08-29 |
JP6922781B2 JP6922781B2 (ja) | 2021-08-18 |
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JP2018029445A Active JP6922781B2 (ja) | 2018-02-22 | 2018-02-22 | 光変調器 |
Country Status (5)
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US (1) | US11747659B2 (ja) |
EP (1) | EP3757664B1 (ja) |
JP (1) | JP6922781B2 (ja) |
CN (1) | CN111758065B (ja) |
WO (1) | WO2019163559A1 (ja) |
Citations (7)
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---|---|---|---|---|
JP2008010538A (ja) * | 2006-06-28 | 2008-01-17 | Furukawa Electric Co Ltd:The | 面発光レーザ素子及びその製造方法 |
US20120044964A1 (en) * | 2009-12-21 | 2012-02-23 | Yang Rui Q | Semiconductor Interband Lasers and Method of Forming |
US20130301975A1 (en) * | 2012-04-13 | 2013-11-14 | Skorpios Technologies, Inc. | Hybrid optical modulator |
JP2015108777A (ja) * | 2013-12-05 | 2015-06-11 | 日本電信電話株式会社 | 偏波制御素子 |
JP2017072807A (ja) * | 2015-10-09 | 2017-04-13 | 株式会社フジクラ | 半導体光導波路、半導体光変調器、及び半導体光変調システム |
JP2017204601A (ja) * | 2016-05-13 | 2017-11-16 | 日本電信電話株式会社 | 半導体レーザ |
JP2018046258A (ja) * | 2016-09-16 | 2018-03-22 | 国立大学法人 東京大学 | 光集積回路装置及びその製造方法 |
Family Cites Families (14)
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JP2786063B2 (ja) * | 1992-08-11 | 1998-08-13 | 日本電気株式会社 | 半導体光制御デバイス |
JPH11212037A (ja) * | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | 半導体光変調器と光集積回路素子 |
US6845198B2 (en) * | 2003-03-25 | 2005-01-18 | Sioptical, Inc. | High-speed silicon-based electro-optic modulator |
JP2005010277A (ja) * | 2003-06-17 | 2005-01-13 | Japan Aviation Electronics Industry Ltd | 電気吸収型光変調器 |
US20070172185A1 (en) * | 2006-01-25 | 2007-07-26 | Hutchinson John M | Optical waveguide with mode shape for high efficiency modulation |
JP5189956B2 (ja) * | 2008-11-05 | 2013-04-24 | 日本電信電話株式会社 | 光信号処理装置 |
US8737772B2 (en) | 2010-02-19 | 2014-05-27 | Kotura, Inc. | Reducing optical loss in an optical modulator using depletion region |
JP2012252139A (ja) * | 2011-06-02 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体光変調器の製造方法及び半導体光変調器 |
KR20130141850A (ko) * | 2012-06-18 | 2013-12-27 | 광주과학기술원 | 광학 소자 |
JP5413865B1 (ja) * | 2012-12-27 | 2014-02-12 | 株式会社フジクラ | 光導波路素子及び光変調器 |
JP2015015396A (ja) * | 2013-07-05 | 2015-01-22 | 日本電信電話株式会社 | 光半導体素子 |
US10216016B2 (en) * | 2014-07-25 | 2019-02-26 | Cornell University | Linear optical phase modulators |
JP2016156933A (ja) * | 2015-02-24 | 2016-09-01 | 日本電信電話株式会社 | 光集積回路および製造方法 |
JP2017040841A (ja) | 2015-08-21 | 2017-02-23 | 国立大学法人 東京大学 | 光導波路素子および光集積回路装置 |
-
2018
- 2018-02-22 JP JP2018029445A patent/JP6922781B2/ja active Active
-
2019
- 2019-02-08 WO PCT/JP2019/004584 patent/WO2019163559A1/ja unknown
- 2019-02-08 US US16/971,523 patent/US11747659B2/en active Active
- 2019-02-08 CN CN201980014478.0A patent/CN111758065B/zh active Active
- 2019-02-08 EP EP19757241.5A patent/EP3757664B1/en active Active
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JP2008010538A (ja) * | 2006-06-28 | 2008-01-17 | Furukawa Electric Co Ltd:The | 面発光レーザ素子及びその製造方法 |
US20120044964A1 (en) * | 2009-12-21 | 2012-02-23 | Yang Rui Q | Semiconductor Interband Lasers and Method of Forming |
US20130301975A1 (en) * | 2012-04-13 | 2013-11-14 | Skorpios Technologies, Inc. | Hybrid optical modulator |
JP2015108777A (ja) * | 2013-12-05 | 2015-06-11 | 日本電信電話株式会社 | 偏波制御素子 |
JP2017072807A (ja) * | 2015-10-09 | 2017-04-13 | 株式会社フジクラ | 半導体光導波路、半導体光変調器、及び半導体光変調システム |
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Also Published As
Publication number | Publication date |
---|---|
CN111758065A (zh) | 2020-10-09 |
EP3757664A4 (en) | 2021-11-10 |
JP6922781B2 (ja) | 2021-08-18 |
US20200400977A1 (en) | 2020-12-24 |
EP3757664B1 (en) | 2022-12-21 |
WO2019163559A1 (ja) | 2019-08-29 |
US11747659B2 (en) | 2023-09-05 |
EP3757664A1 (en) | 2020-12-30 |
CN111758065B (zh) | 2023-10-31 |
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