JP2019096821A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019096821A JP2019096821A JP2017227002A JP2017227002A JP2019096821A JP 2019096821 A JP2019096821 A JP 2019096821A JP 2017227002 A JP2017227002 A JP 2017227002A JP 2017227002 A JP2017227002 A JP 2017227002A JP 2019096821 A JP2019096821 A JP 2019096821A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 162
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 7
- 239000011229 interlayer Substances 0.000 claims 2
- 238000003475 lamination Methods 0.000 abstract 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 17
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 17
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 17
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 17
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 101150108928 CCC1 gene Proteins 0.000 description 1
- 241000006342 Vepris Species 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/075—Charge pumps of the Schenkel-type including a plurality of stages and two sets of clock signals, one set for the odd and one set for the even numbered stages
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/076—Charge pumps of the Schenkel-type the clock signals being boosted to a value being higher than the input voltage value
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
一方、チャージポンプを用いた昇圧回路では、特許文献1でもみられるように、昇圧用のキャパシタが必須の構成となっている。昇圧回路に必要とされるキャパシタの容量値は比較的大きいので、必然的にレイアウト面積も大きくなる。昇圧回路の出力電圧が大きくなると、なおさら昇圧回路のレイアウト全体に占める昇圧用キャパシタの面積が大きくなる。従って、チャージポンプを用いた昇圧回路のレイアウト面積削減においては、昇圧用キャパシタのレイアウト面積をいかに削減するかがポイントの一つとなる。
図1から図6を参照して、本実施の形態に係る半導体装置について説明する。本実施の形態に係る半導体装置は、以下で説明する昇圧回路単体の形態、または以下で説明する昇圧回路が他の機能の回路とともに搭載された半導体集積回路の形態をとりえる。以下では、本実施の形態に係る半導体装置における昇圧回路の部分について説明する。
ポンプ回路11−2の出力端子OUTはポンプ回路18の入力端子INと共通にノードN5に接続されている。ポンプ回路18の出力端子OUTはポンプ回路19の入力端子INと共通にノードN6に接続されている。ポンプ回路19の出力端子OUTはPMOSトランジスタPT2のドレイン端子、分圧部13の入力端子IN0、レベルシフタ27の入力端子IN0と共通に出力端子VEPに接続されている。
なお、以下では、出力端子OUT0から出力されるクロック信号を「クロック信号clock0」、出力端子OUT1から出力されるクロック信号を「クロック信号clock1」、出力端子OUT2から出力されるクロック信号を「クロック信号clock2」、出力端子OUT3から出力されるクロック信号を「クロック信号clock3」と表記する。
この時、キャパシタCM1の他方の電極の電位はLであることから、キャパシタCM1には電位差VINに応じた電荷が蓄えられ、キャパシタCM2は出力端子OUTにおいて電流が消費されない限り電位差VINに応じた電荷が蓄えられたままである。
図6(a)において、NMOSトランジスタNT3、NT4はトランジスタ領域TA1に配置され、キャパシタCC1、CC2はキャパシタ領域CA1に配置されている。すなわち、キャパシタ領域CA1にはMOSキャパシタCCが配置される。一方、図6(b)は、ポンプ回路11(図2(a)参照)のレイアウトの一例を示している。図6(b)において、NMOSトランジスタNT1、NT2はトランジスタ領域TA2に配置され、キャパシタCM1、CM2はキャパシタ領域CA2に配置されている。すなわち、キャパシタ領域CA2にはMIMキャパシタCMが配置される。
図7を参照して、本実施の形態に係る昇圧回路について説明する。本実施の形態は、上記昇圧回路10において、MIMキャパシタCMとMOSキャパシタCCとの間にシールド配線を配置した形態である。従って、昇圧回路、ポンプ回路の構成は上記昇圧回路10と同様なので、説明を省略する。
11−1、11−2 ポンプ回路
13 分圧部
14 比較部
15 NAND回路
16 インバータ
17 クロック生成部
18、19 ポンプ回路
20 半導体基板
21 アクティブ領域
22 ゲート
23 コンタクト
24 ビア
25 キャパシタメタル
26 ビア
27 レベルシフタ
30、30A ポンプ部
31 主面
M1 第1メタル
M2 第2メタル
M3 第3メタル
M4 第4メタル
M5 第5メタル
N1〜N14 ノード
NT1〜NT7 NMOSトランジスタ
PT1、PT2 PMOSトランジスタ
CC、CC1〜CC4 MOSキャパシタ
CM、CM1〜CM2 MIMキャパシタ
CA1、CA2 キャパシタ領域
TA1、TA2 トランジスタ領域
EN イネーブル端子
CKEP クロック入力端子
VEP 出力端子
REF リファレンス端子
VDD 電源
Vd 電位
clock0〜clock3 クロック信号
Claims (8)
- 半導体基板と、
前記半導体基板の主面上に形成されるとともに予め定められた機能を有する少なくとも1つの回路ブロックと、
前記回路ブロックを接続する複数の金属層を備えた配線層と、
前記回路ブロックに接続されるとともに前記金属層を用いた第1の容量、および前記半導体基板の主面内に形成されたアクティブ領域を用いた第2の容量とが混在した複数の容量と、を含み、
前記第1の容量の少なくとも1つと前記第2の容量の少なくとも1つが半導体層の積層方向に積層された
半導体装置。 - 前記第1の容量を構成する誘電体が前記半導体層の層間膜で形成された
請求項1に記載の半導体装置。 - 前記層間膜がシリコン酸窒化膜である
請求項2に記載の半導体装置。 - 前記回路ブロックが、各々昇圧用容量を備え入力された電圧を順次昇圧するとともに直列に接続された複数のチャージポンプ回路を含む昇圧回路であり、
前記複数のチャージポンプ回路の最初のチャージポンプ回路を含む予め定められた個数のチャージポンプ回路の前記昇圧用容量が前記第1の容量で形成され、前記複数のチャージポンプ回路の残りのチャージポンプ回路の前記昇圧用容量が前記第2の容量で形成されるとともに少なくとも1つの前記第1の容量と少なくとも1つの前記第2の容量とが積層された
請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記複数のチャージポンプ回路の各々は、前記昇圧用容量の電荷流入を制御するMOSトランジスタを備え、
前記第2の容量は、前記MOSトランジスタを用いて形成されるとともに前記MOSトランジスタのゲート酸化膜が誘電体とされた
請求項4に記載の半導体装置。 - 前記第2の容量と前記MOSトランジスタとが同じ層に形成されている
請求項5に記載の半導体装置。 - 前記第1の容量が、MIM容量またはMOM容量である
請求項1から請求項6のいずれか1項に記載の半導体装置。 - 前記第1の容量と前記第2の容量との間に、前記第1の容量と前記第2の容量とを相互に遮蔽する少なくとも1層の遮蔽層をさらに含む
請求項1から請求項7のいずれか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017227002A JP7103780B2 (ja) | 2017-11-27 | 2017-11-27 | 半導体装置 |
US16/202,006 US10673326B2 (en) | 2017-11-27 | 2018-11-27 | Semiconductor device including boosting circuit with plural pump circuits |
CN201811424300.7A CN109994469B (zh) | 2017-11-27 | 2018-11-27 | 半导体装置 |
JP2022109698A JP2022125281A (ja) | 2017-11-27 | 2022-07-07 | 半導体装置 |
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JP2017227002A JP7103780B2 (ja) | 2017-11-27 | 2017-11-27 | 半導体装置 |
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JP2022109698A Division JP2022125281A (ja) | 2017-11-27 | 2022-07-07 | 半導体装置 |
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JP2019096821A true JP2019096821A (ja) | 2019-06-20 |
JP7103780B2 JP7103780B2 (ja) | 2022-07-20 |
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JP2017227002A Active JP7103780B2 (ja) | 2017-11-27 | 2017-11-27 | 半導体装置 |
JP2022109698A Pending JP2022125281A (ja) | 2017-11-27 | 2022-07-07 | 半導体装置 |
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US (1) | US10673326B2 (ja) |
JP (2) | JP7103780B2 (ja) |
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KR20210078099A (ko) * | 2019-12-18 | 2021-06-28 | 삼성전자주식회사 | 반도체 메모리 장치 |
TWI749645B (zh) * | 2020-07-17 | 2021-12-11 | 瑞昱半導體股份有限公司 | 半導體裝置以及金氧半電容器結構 |
US11929317B2 (en) * | 2020-12-07 | 2024-03-12 | Macom Technology Solutions Holdings, Inc. | Capacitor networks for harmonic control in power devices |
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- 2018-11-27 US US16/202,006 patent/US10673326B2/en active Active
- 2018-11-27 CN CN201811424300.7A patent/CN109994469B/zh active Active
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JPH02276088A (ja) * | 1989-01-18 | 1990-11-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH10284689A (ja) * | 1997-04-03 | 1998-10-23 | Fujitsu Ltd | 昇圧回路および半導体集積回路 |
JP2005524993A (ja) * | 2002-05-07 | 2005-08-18 | エステーミクロエレクトロニクス ソシエテ アノニム | コンデンサと少なくとも1つの半導体素子を有する電子回路、およびこのような回路を設計する方法 |
JP2007208101A (ja) * | 2006-02-03 | 2007-08-16 | Toshiba Corp | 半導体装置 |
JP2008130683A (ja) * | 2006-11-17 | 2008-06-05 | Toshiba Corp | 半導体集積回路装置 |
JP2010109338A (ja) * | 2008-09-30 | 2010-05-13 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置 |
JP2011087385A (ja) * | 2009-10-14 | 2011-04-28 | Asahi Kasei Electronics Co Ltd | チャージポンプ回路 |
JP2014107415A (ja) * | 2012-11-28 | 2014-06-09 | Renesas Electronics Corp | コンデンサ、チャージポンプ回路、および半導体装置 |
JP2016100387A (ja) * | 2014-11-19 | 2016-05-30 | 株式会社東芝 | 半導体記憶装置 |
JP2016115386A (ja) * | 2014-12-16 | 2016-06-23 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
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US20190165673A1 (en) | 2019-05-30 |
CN109994469B (zh) | 2023-11-07 |
JP7103780B2 (ja) | 2022-07-20 |
CN109994469A (zh) | 2019-07-09 |
JP2022125281A (ja) | 2022-08-26 |
US10673326B2 (en) | 2020-06-02 |
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