JP2019056725A - 炭化珪素半導体基板を用いた半導体装置の製造方法 - Google Patents

炭化珪素半導体基板を用いた半導体装置の製造方法 Download PDF

Info

Publication number
JP2019056725A
JP2019056725A JP2017179509A JP2017179509A JP2019056725A JP 2019056725 A JP2019056725 A JP 2019056725A JP 2017179509 A JP2017179509 A JP 2017179509A JP 2017179509 A JP2017179509 A JP 2017179509A JP 2019056725 A JP2019056725 A JP 2019056725A
Authority
JP
Japan
Prior art keywords
trench
epitaxial layer
silicon carbide
shape
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017179509A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019056725A5 (https=
Inventor
愛子 梶
Aiko KAJI
愛子 梶
周平 箕谷
Shuhei Minotani
周平 箕谷
治人 市川
Haruhito ICHIKAWA
治人 市川
竹内　有一
Yuichi Takeuchi
有一 竹内
渡辺　行彦
Yukihiko Watanabe
行彦 渡辺
成岡　英樹
Hideki Naruoka
英樹 成岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
Original Assignee
Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Toyota Motor Corp, Toyota Central R&D Labs Inc filed Critical Denso Corp
Priority to JP2017179509A priority Critical patent/JP2019056725A/ja
Priority to PCT/JP2018/034054 priority patent/WO2019059102A1/ja
Publication of JP2019056725A publication Critical patent/JP2019056725A/ja
Publication of JP2019056725A5 publication Critical patent/JP2019056725A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2017179509A 2017-09-19 2017-09-19 炭化珪素半導体基板を用いた半導体装置の製造方法 Pending JP2019056725A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017179509A JP2019056725A (ja) 2017-09-19 2017-09-19 炭化珪素半導体基板を用いた半導体装置の製造方法
PCT/JP2018/034054 WO2019059102A1 (ja) 2017-09-19 2018-09-13 炭化珪素半導体基板を用いた半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017179509A JP2019056725A (ja) 2017-09-19 2017-09-19 炭化珪素半導体基板を用いた半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2019056725A true JP2019056725A (ja) 2019-04-11
JP2019056725A5 JP2019056725A5 (https=) 2020-07-30

Family

ID=65809874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017179509A Pending JP2019056725A (ja) 2017-09-19 2017-09-19 炭化珪素半導体基板を用いた半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JP2019056725A (https=)
WO (1) WO2019059102A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127551A (ja) * 1990-09-19 1992-04-28 Fujitsu Ltd 露光パターンの検査方法
JP2002031885A (ja) * 2000-07-17 2002-01-31 Nikon Corp マスク、露光装置の検査方法、並びに露光方法
JP2005328014A (ja) * 2004-04-14 2005-11-24 Denso Corp 半導体装置の製造方法
JP2008053363A (ja) * 2006-08-23 2008-03-06 Matsushita Electric Ind Co Ltd 半導体基板およびその製造方法
JP2009170558A (ja) * 2008-01-14 2009-07-30 Denso Corp 炭化珪素半導体装置の製造方法
WO2014199749A1 (ja) * 2013-06-13 2014-12-18 住友電気工業株式会社 炭化珪素半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4218235B2 (ja) * 2001-11-05 2009-02-04 株式会社デンソー 半導体装置の製造方法及びエピタキシャル膜の膜厚測定方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127551A (ja) * 1990-09-19 1992-04-28 Fujitsu Ltd 露光パターンの検査方法
JP2002031885A (ja) * 2000-07-17 2002-01-31 Nikon Corp マスク、露光装置の検査方法、並びに露光方法
JP2005328014A (ja) * 2004-04-14 2005-11-24 Denso Corp 半導体装置の製造方法
JP2008053363A (ja) * 2006-08-23 2008-03-06 Matsushita Electric Ind Co Ltd 半導体基板およびその製造方法
JP2009170558A (ja) * 2008-01-14 2009-07-30 Denso Corp 炭化珪素半導体装置の製造方法
WO2014199749A1 (ja) * 2013-06-13 2014-12-18 住友電気工業株式会社 炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
WO2019059102A1 (ja) 2019-03-28

Similar Documents

Publication Publication Date Title
JP5240164B2 (ja) 炭化珪素半導体装置の製造方法
JP6950396B2 (ja) 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置の製造方法
KR20120098666A (ko) 반도체 기판 및 반도체 기판의 제조 방법
JP4772565B2 (ja) 半導体装置の製造方法
JP2019056725A (ja) 炭化珪素半導体基板を用いた半導体装置の製造方法
EP1806770A1 (en) Gallium nitride wafer
KR100392744B1 (ko) 반도체 장치, 그 제조에 이용하는 포토마스크, 및 그 중첩정밀도 향상 방법
JP2013065650A (ja) 炭化珪素半導体装置の製造方法
JP4531713B2 (ja) アライメントマーク及びその形成方法、半導体装置及びその製造方法
US12568828B2 (en) Method and system for fabricating regrown fiducials for semiconductor devices
JP2007281157A (ja) 半導体装置の製造方法
JP7230909B2 (ja) 炭化珪素半導体装置の製造方法
CN115326244A (zh) 应力测量结构与应力测量方法
US12532748B2 (en) Semiconductor substrate having an alignment structure
CN102931219B (zh) 半导体器件及其制备方法
KR100859493B1 (ko) 반도체 소자의 제조방법
JP4013727B2 (ja) バーニアパターン及びそれを用いたマスク合わせ方法、パターン測長方法
KR20040046696A (ko) 반도체 소자의 응력 측정방법
JP4225358B2 (ja) 半導体装置及び半導体装置の製造方法
US20050002034A1 (en) Overlay key with a plurality of crossings and method of measuring overlay accuracy using the same
CN119937263A (zh) 一种零层光刻对准标记的制作方法及半导体结构
JPS62128118A (ja) 半導体装置
JP2003007618A (ja) シリコンエピタキシャルウェーハの製造方法
JPH0286116A (ja) マスクアライメント方法
JPS59165421A (ja) 半導体装置の位置合わせマ−ク

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200604

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200604

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20200612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20200612

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210608

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20211130