JP2019054188A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP2019054188A JP2019054188A JP2017178724A JP2017178724A JP2019054188A JP 2019054188 A JP2019054188 A JP 2019054188A JP 2017178724 A JP2017178724 A JP 2017178724A JP 2017178724 A JP2017178724 A JP 2017178724A JP 2019054188 A JP2019054188 A JP 2019054188A
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- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 239000003566 sealing material Substances 0.000 claims abstract description 54
- 238000003384 imaging method Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 239000008393 encapsulating agent Substances 0.000 claims description 6
- 239000006229 carbon black Substances 0.000 abstract description 7
- 238000007789 sealing Methods 0.000 abstract description 2
- 230000035699 permeability Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 90
- 239000002184 metal Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
13 分割予定ライン
15 デバイス
16 レーザーヘッド(集光器)
21 金属ポスト
23 封止材
25 バンプ
26 可視光撮像手段(可視光撮像ユニット)
27 WL-CSPウェーハ
28 斜光手段
29,29a,29b 改質層
31 デバイスチップ
50 分割装置
Claims (1)
- 表面に交差して形成された複数の分割予定ラインによって区画されたチップ領域にそれぞれデバイスが形成されたデバイスウェーハの表面が封止材で封止され、該封止材の該チップ領域にそれぞれ複数のバンプが形成されたウェーハの加工方法であって、
該ウェーハの表面側から可視光撮像手段によって該封止材を透過して該デバイスウェーハの表面側を撮像してアライメントマークを検出し、該アライメントマークに基づいてレーザー加工すべき該分割予定ラインを検出するアライメント工程と、
該アライメント工程を実施した後、該デバイスウェーハ及び該封止材に対して透過性を有する波長のレーザービームの集光点を該デバイスウェーハ又は該封止材の内部に位置付けて、該ウェーハの表面側から該分割予定ラインに沿ってレーザービームを照射して、該デバイスウェーハ及び該封止材の内部に改質層を形成する改質層形成工程と、
該改質層形成工程を実施した後、該デバイスウェーハ及び該封止材に外力を付与して該改質層を分割起点として表面が該封止材によって封止された個々のデバイスチップに分割する分割工程と、を備え、
該アライメント工程は、該可視光撮像手段によって撮像する領域に斜光手段によって斜めから光を照射しながら実施することを特徴とするウェーハの加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178724A JP7007052B2 (ja) | 2017-09-19 | 2017-09-19 | ウェーハの加工方法 |
KR1020180104754A KR102607962B1 (ko) | 2017-09-19 | 2018-09-03 | 웨이퍼의 가공 방법 |
SG10201807863RA SG10201807863RA (en) | 2017-09-19 | 2018-09-12 | Processing method for wafer |
CN201811066921.2A CN109514744B (zh) | 2017-09-19 | 2018-09-13 | 晶片的加工方法 |
TW107132557A TWI769311B (zh) | 2017-09-19 | 2018-09-14 | 晶圓加工方法 |
DE102018215817.7A DE102018215817B4 (de) | 2017-09-19 | 2018-09-18 | Bearbeitungsverfahren für einen wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178724A JP7007052B2 (ja) | 2017-09-19 | 2017-09-19 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019054188A true JP2019054188A (ja) | 2019-04-04 |
JP7007052B2 JP7007052B2 (ja) | 2022-01-24 |
Family
ID=65527212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017178724A Active JP7007052B2 (ja) | 2017-09-19 | 2017-09-19 | ウェーハの加工方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP7007052B2 (ja) |
KR (1) | KR102607962B1 (ja) |
CN (1) | CN109514744B (ja) |
DE (1) | DE102018215817B4 (ja) |
SG (1) | SG10201807863RA (ja) |
TW (1) | TWI769311B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112164670A (zh) * | 2020-09-28 | 2021-01-01 | 西安微电子技术研究所 | 一种ccga器件的视觉对位植柱装置及方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014003274A (ja) * | 2012-05-25 | 2014-01-09 | Nitto Denko Corp | 半導体装置の製造方法及びアンダーフィル材 |
WO2014156688A1 (ja) * | 2013-03-27 | 2014-10-02 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
JP2014192238A (ja) * | 2013-03-26 | 2014-10-06 | Nitto Denko Corp | アンダーフィル材、封止シート及び半導体装置の製造方法 |
JP2015028980A (ja) * | 2013-07-30 | 2015-02-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016166120A (ja) * | 2015-03-06 | 2016-09-15 | 三星ダイヤモンド工業株式会社 | 積層基板の加工方法及びレーザ光による積層基板の加工装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05337668A (ja) * | 1992-06-09 | 1993-12-21 | Toshiba Corp | レーザ溶接装置 |
JPH06258056A (ja) * | 1993-03-05 | 1994-09-16 | Tokyo Seimitsu Co Ltd | 半導体ウエハの形状認識装置 |
JP2002057143A (ja) * | 2000-08-07 | 2002-02-22 | Hitachi Ltd | 浮遊異物検出装置 |
US6724479B2 (en) | 2001-09-28 | 2004-04-20 | Infineon Technologies Ag | Method for overlay metrology of low contrast features |
JP4127614B2 (ja) * | 2002-01-17 | 2008-07-30 | 本田技研工業株式会社 | レーザ溶接装置および溶接方法 |
JP2006134971A (ja) * | 2004-11-04 | 2006-05-25 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP5221007B2 (ja) * | 2006-05-31 | 2013-06-26 | アイシン精機株式会社 | 発光ダイオードチップ及びウェハ分割加工方法 |
JP5828683B2 (ja) * | 2011-06-07 | 2015-12-09 | 株式会社ディスコ | 加工装置 |
JP5948034B2 (ja) | 2011-09-27 | 2016-07-06 | 株式会社ディスコ | アライメント方法 |
KR20130071386A (ko) * | 2011-12-20 | 2013-06-28 | 닛토덴코 가부시키가이샤 | 기판 소편화 방법 및 이것을 사용한 기판 소편화 장치 |
JP2016013557A (ja) * | 2013-02-13 | 2016-01-28 | 住友化学株式会社 | レーザー光照射装置及び光学部材貼合体の製造装置 |
KR102070087B1 (ko) * | 2013-04-29 | 2020-01-30 | 삼성전자주식회사 | 반도체 소자 제조방법 |
JP6113019B2 (ja) * | 2013-08-07 | 2017-04-12 | 株式会社ディスコ | ウエーハの分割方法 |
JP2016015438A (ja) | 2014-07-03 | 2016-01-28 | 株式会社ディスコ | アライメント方法 |
JP6360411B2 (ja) * | 2014-10-09 | 2018-07-18 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016129202A (ja) * | 2015-01-09 | 2016-07-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP6494334B2 (ja) * | 2015-03-05 | 2019-04-03 | 株式会社ディスコ | デバイスチップの製造方法 |
JP6339514B2 (ja) * | 2015-03-25 | 2018-06-06 | Towa株式会社 | 切断装置及び切断方法 |
JP6560040B2 (ja) * | 2015-07-06 | 2019-08-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017092129A (ja) * | 2015-11-05 | 2017-05-25 | 株式会社ディスコ | ウエーハの加工方法 |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014003274A (ja) * | 2012-05-25 | 2014-01-09 | Nitto Denko Corp | 半導体装置の製造方法及びアンダーフィル材 |
JP2014192238A (ja) * | 2013-03-26 | 2014-10-06 | Nitto Denko Corp | アンダーフィル材、封止シート及び半導体装置の製造方法 |
WO2014156688A1 (ja) * | 2013-03-27 | 2014-10-02 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
JP2015028980A (ja) * | 2013-07-30 | 2015-02-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016166120A (ja) * | 2015-03-06 | 2016-09-15 | 三星ダイヤモンド工業株式会社 | 積層基板の加工方法及びレーザ光による積層基板の加工装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112164670A (zh) * | 2020-09-28 | 2021-01-01 | 西安微电子技术研究所 | 一种ccga器件的视觉对位植柱装置及方法 |
CN112164670B (zh) * | 2020-09-28 | 2023-09-26 | 珠海天成先进半导体科技有限公司 | 一种ccga器件的视觉对位植柱装置及方法 |
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CN109514744B (zh) | 2022-03-04 |
KR102607962B1 (ko) | 2023-11-29 |
CN109514744A (zh) | 2019-03-26 |
TWI769311B (zh) | 2022-07-01 |
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