CN109514744B - 晶片的加工方法 - Google Patents
晶片的加工方法 Download PDFInfo
- Publication number
- CN109514744B CN109514744B CN201811066921.2A CN201811066921A CN109514744B CN 109514744 B CN109514744 B CN 109514744B CN 201811066921 A CN201811066921 A CN 201811066921A CN 109514744 B CN109514744 B CN 109514744B
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- wafer
- sealing material
- front surface
- device wafer
- modified layer
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000003566 sealing material Substances 0.000 claims abstract description 59
- 238000003384 imaging method Methods 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000003672 processing method Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 91
- 239000002184 metal Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000006229 carbon black Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-178724 | 2017-09-19 | ||
JP2017178724A JP7007052B2 (ja) | 2017-09-19 | 2017-09-19 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109514744A CN109514744A (zh) | 2019-03-26 |
CN109514744B true CN109514744B (zh) | 2022-03-04 |
Family
ID=65527212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811066921.2A Active CN109514744B (zh) | 2017-09-19 | 2018-09-13 | 晶片的加工方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP7007052B2 (ja) |
KR (1) | KR102607962B1 (ja) |
CN (1) | CN109514744B (ja) |
DE (1) | DE102018215817B4 (ja) |
SG (1) | SG10201807863RA (ja) |
TW (1) | TWI769311B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112164670B (zh) * | 2020-09-28 | 2023-09-26 | 珠海天成先进半导体科技有限公司 | 一种ccga器件的视觉对位植柱装置及方法 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0614080A2 (en) * | 1993-03-05 | 1994-09-07 | Tokyo Seimitsu Co.,Ltd. | Apparatus for recognizing the shape of a semiconductor wafer |
CN1788912A (zh) * | 2004-11-04 | 2006-06-21 | 株式会社迪斯科 | 用于晶圆的激光处理的方法 |
JP2013074021A (ja) * | 2011-09-27 | 2013-04-22 | Disco Abrasive Syst Ltd | アライメント方法 |
CN103178008A (zh) * | 2011-12-20 | 2013-06-26 | 日东电工株式会社 | 基板小片化方法和使用基板小片化方法的基板小片化装置 |
CN104124188A (zh) * | 2013-04-29 | 2014-10-29 | 三星电子株式会社 | 切割晶片的设备和方法、晶片吸盘、制造发光器件的方法 |
CN104347500A (zh) * | 2013-08-07 | 2015-02-11 | 株式会社迪思科 | 晶片的分割方法 |
TW201608626A (zh) * | 2014-07-03 | 2016-03-01 | Disco Corp | 對準方法 |
CN105514036A (zh) * | 2014-10-09 | 2016-04-20 | 株式会社迪思科 | 晶片的加工方法 |
CN105789125A (zh) * | 2015-01-09 | 2016-07-20 | 株式会社迪思科 | 晶片的加工方法 |
CN105935842A (zh) * | 2015-03-05 | 2016-09-14 | 株式会社迪思科 | 器件芯片的制造方法 |
CN106024613A (zh) * | 2015-03-25 | 2016-10-12 | 东和株式会社 | 切断装置以及切断方法 |
CN106340490A (zh) * | 2015-07-06 | 2017-01-18 | 株式会社迪思科 | 晶片的加工方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05337668A (ja) * | 1992-06-09 | 1993-12-21 | Toshiba Corp | レーザ溶接装置 |
JP2002057143A (ja) * | 2000-08-07 | 2002-02-22 | Hitachi Ltd | 浮遊異物検出装置 |
US6724479B2 (en) | 2001-09-28 | 2004-04-20 | Infineon Technologies Ag | Method for overlay metrology of low contrast features |
JP4127614B2 (ja) * | 2002-01-17 | 2008-07-30 | 本田技研工業株式会社 | レーザ溶接装置および溶接方法 |
JP5221007B2 (ja) * | 2006-05-31 | 2013-06-26 | アイシン精機株式会社 | 発光ダイオードチップ及びウェハ分割加工方法 |
JP5828683B2 (ja) * | 2011-06-07 | 2015-12-09 | 株式会社ディスコ | 加工装置 |
JP2014003274A (ja) * | 2012-05-25 | 2014-01-09 | Nitto Denko Corp | 半導体装置の製造方法及びアンダーフィル材 |
JP2016013557A (ja) * | 2013-02-13 | 2016-01-28 | 住友化学株式会社 | レーザー光照射装置及び光学部材貼合体の製造装置 |
JP6157890B2 (ja) * | 2013-03-26 | 2017-07-05 | 日東電工株式会社 | アンダーフィル材、封止シート及び半導体装置の製造方法 |
CN105102179B (zh) * | 2013-03-27 | 2017-04-26 | 浜松光子学株式会社 | 激光加工装置及激光加工方法 |
JP6066854B2 (ja) * | 2013-07-30 | 2017-01-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016166120A (ja) * | 2015-03-06 | 2016-09-15 | 三星ダイヤモンド工業株式会社 | 積層基板の加工方法及びレーザ光による積層基板の加工装置 |
JP2017092129A (ja) * | 2015-11-05 | 2017-05-25 | 株式会社ディスコ | ウエーハの加工方法 |
-
2017
- 2017-09-19 JP JP2017178724A patent/JP7007052B2/ja active Active
-
2018
- 2018-09-03 KR KR1020180104754A patent/KR102607962B1/ko active IP Right Grant
- 2018-09-12 SG SG10201807863RA patent/SG10201807863RA/en unknown
- 2018-09-13 CN CN201811066921.2A patent/CN109514744B/zh active Active
- 2018-09-14 TW TW107132557A patent/TWI769311B/zh active
- 2018-09-18 DE DE102018215817.7A patent/DE102018215817B4/de active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0614080A2 (en) * | 1993-03-05 | 1994-09-07 | Tokyo Seimitsu Co.,Ltd. | Apparatus for recognizing the shape of a semiconductor wafer |
CN1788912A (zh) * | 2004-11-04 | 2006-06-21 | 株式会社迪斯科 | 用于晶圆的激光处理的方法 |
JP2013074021A (ja) * | 2011-09-27 | 2013-04-22 | Disco Abrasive Syst Ltd | アライメント方法 |
CN103178008A (zh) * | 2011-12-20 | 2013-06-26 | 日东电工株式会社 | 基板小片化方法和使用基板小片化方法的基板小片化装置 |
CN104124188A (zh) * | 2013-04-29 | 2014-10-29 | 三星电子株式会社 | 切割晶片的设备和方法、晶片吸盘、制造发光器件的方法 |
CN104347500A (zh) * | 2013-08-07 | 2015-02-11 | 株式会社迪思科 | 晶片的分割方法 |
TW201608626A (zh) * | 2014-07-03 | 2016-03-01 | Disco Corp | 對準方法 |
CN105514036A (zh) * | 2014-10-09 | 2016-04-20 | 株式会社迪思科 | 晶片的加工方法 |
CN105789125A (zh) * | 2015-01-09 | 2016-07-20 | 株式会社迪思科 | 晶片的加工方法 |
CN105935842A (zh) * | 2015-03-05 | 2016-09-14 | 株式会社迪思科 | 器件芯片的制造方法 |
CN106024613A (zh) * | 2015-03-25 | 2016-10-12 | 东和株式会社 | 切断装置以及切断方法 |
CN106340490A (zh) * | 2015-07-06 | 2017-01-18 | 株式会社迪思科 | 晶片的加工方法 |
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DE102018215817A1 (de) | 2019-03-21 |
TW201916136A (zh) | 2019-04-16 |
JP7007052B2 (ja) | 2022-01-24 |
JP2019054188A (ja) | 2019-04-04 |
KR102607962B1 (ko) | 2023-11-29 |
CN109514744A (zh) | 2019-03-26 |
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SG10201807863RA (en) | 2019-04-29 |
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KR20190032193A (ko) | 2019-03-27 |
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