TWI772519B - 晶圓加工方法 - Google Patents

晶圓加工方法 Download PDF

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TWI772519B
TWI772519B TW107132237A TW107132237A TWI772519B TW I772519 B TWI772519 B TW I772519B TW 107132237 A TW107132237 A TW 107132237A TW 107132237 A TW107132237 A TW 107132237A TW I772519 B TWI772519 B TW I772519B
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sealing material
wafer
element wafer
processing method
alignment
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鈴木克彥
伴祐人
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日商迪思科股份有限公司
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Abstract

[課題] 提供一種晶圓加工方法，能藉由在晶圓正面被覆的包含炭黑的密封材實施對準步驟。[解決手段] 一種晶圓加工方法，以密封材密封元件晶圓的正面，在該密封材的該晶片區域上分別形成多個凸塊，該元件晶圓藉由在正面交叉形成的多條分割預定線劃分的晶片區域上分別形成元件而成，該晶圓加工方法的特徵在於具備：對準步驟，從該晶圓的正面側藉由紅外線攝像手段穿透該密封材，對該元件晶圓的正面側攝像並檢測對準標記，且基於該對準標記檢測應進行雷射加工的該分割預定線；改質層形成步驟，在實施了該對準步驟後，將對該元件晶圓及該密封材具有穿透性的波長之雷射光束的聚光點定位於該元件晶圓及該密封材的內部，從該晶圓的正面側沿著該分割預定線照射雷射光束，在該元件晶圓及該密封材的內部形成改質層；以及分割步驟，在實施了該改質層形成步驟後，對該元件晶圓及該密封材施加外力，並以該改質層作為分割起點分割為正面藉由密封材密封的一個個的元件晶片；該密封材具有使該紅外線攝像手段所接收的紅外線穿透般的穿透性。

Description

晶圓加工方法
本發明為關於WL-CSP晶圓的加工方法。
WL-CSP（Wafer-level Chip Size Package，晶圓級晶片尺寸封裝）晶圓是在晶圓的狀態下形成重佈層及電極（金屬柱）後，將正面側以樹脂密封，並以切割刀片等分割成各封裝件的技術，因為晶圓單體化後的封裝件的大小近似於半導體元件晶片的大小，從小型化及輕量化的觀點亦被廣泛採用。
在WL-CSP晶圓的製程中，在形成多個元件的元件晶圓之元件面側形成重佈層，並進一步透過重佈層形成用來連接元件中的電極的金屬柱後，以樹脂密封金屬柱及元件。
接著，薄化密封材並同時使金屬柱在密封材表面露出後，在金屬柱的端面形成被稱為電極凸塊的外部端子。之後，以切割裝置等切割WL-CSP晶圓並分割為一個個的CSP。
為了保護半導體晶圓免於衝擊或濕氣等，以密封材進行密封相當重要。通常，作為密封材，藉由使用在環氧樹脂中混入由SiC所組成的填充料而成之密封材，密封材的熱膨脹係數近似於半導體元件晶片的熱膨脹係數，防止藉由熱膨脹係數的差異所產生加熱時的封裝件的損壞。
WL-CSP晶圓一般而言使用切割裝置分割為一個個的CSP。在此種情況，由於樹脂覆蓋住為了檢測分割預定線而利用的元件，故WL-CSP晶圓無法從正面側檢測元件的目標（target）圖案。
為此，以在WL-CSP晶圓的樹脂上形成的電極凸塊為目標分度分割預定線，並在樹脂上表面印刷對準用的目標等，進行分割預定線和切割刀片的對準。
但是，在電極凸塊或樹脂上印刷的目標並未形成為如元件般高精確度，故作為對準用的目標有低精確度的問題。因此，基於電極凸塊或印刷的目標而分度分割預定線的情況，恐有偏離分割預定線而切割到元件部分之慮。
因此，例如在日本特開2013-74021號公報中，提出基於在晶圓的外周露出的元件晶圓的圖案來進行對準的方法。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2013-074021號公報 [專利文獻2]日本特開2016-015438號公報
[發明所欲解決的課題] 但是，一般在晶圓的外周上的元件精確度差，若基於在晶圓的外周露出的圖案實施對準時，除有在偏離分割預定線的位置上分割晶圓之慮，更有因晶圓不同而有元件晶圓的圖案不在外周露出之情況。
本發明鑒於上述的問題點，其目的為提供一種晶圓加工方法，能藉由在晶圓正面被覆之包含炭黑的密封材而實施對準步驟。
[解決課題的技術手段] 根據本發明，提供一種晶圓加工方法，以密封材密封元件晶圓的正面，在該密封材的該晶片區域上分別形成多個凸塊，該元件晶圓藉由在正面交叉形成的多條分割預定線劃分的晶片區域上分別形成元件而成，該晶圓加工方法的特徵在於具備：對準步驟，從該晶圓的正面側藉由紅外線攝像手段穿透該密封材，對該元件晶圓的正面側攝像並檢測對準標記，且基於該對準標記檢測應進行雷射加工的該分割預定線；改質層形成步驟，在實施了該對準步驟後，將對該元件晶圓及該密封材具有穿透性的波長之雷射光束的聚光點定位於該元件晶圓及該密封材的內部，從該晶圓的正面側沿著該分割預定線照射雷射光束，在該元件晶圓及該密封材的內部形成改質層；以及分割步驟，在實施了該改質層形成步驟後，對該元件晶圓及該密封材施加外力，並以該改質層作為分割起點分割為正面由密封材密封的一個個的元件晶片；該密封材具有使該紅外線攝像手段所接收的紅外線穿透般的穿透性。
較佳為，在對準步驟中使用的紅外線攝影手段包含InGaAs攝像元件。
[發明功效] 根據本發明的晶圓加工方法，因以使紅外線攝像手段所接收的紅外線穿透之密封材來密封元件晶圓，並藉由紅外線攝像手段穿透密封材而檢測在元件晶圓上形成的對準標記，且能基於對準標記實施對準，因此不需如以往般去除在晶圓的正面的外周部分的密封材，即可簡單實施對準步驟。
因此，將對元件晶圓及密封材具有穿透性的波長之雷射光束的聚光點定位於元件晶圓及密封材的內部，從晶圓的正面側照射雷射光束，在元件晶圓及密封材的內部形成改質層，能夠以該改質層作為分割起點將晶圓分割為正面藉由密封材密封的一個個的元件晶片。
以下參閱圖式詳細說明本發明的實施方式。WL-CSP晶圓27的分解立體圖參閱圖1（A）而示出。圖1（B）係WL-CSP晶圓27的立體圖。
如圖1（A）所示，在元件晶圓11的正面11a上，在形成為格子狀的多條分割預定線（切割道）13所劃分的各區域上形成LSI（Large Scale Integration，大型積體電路）等的元件15。
元件晶圓（以下有單純略稱為晶圓之情形）11是預先研削背面11b並薄化至預定的厚度（100~200µm程度）後，如圖2所示，在元件15中的電極17形成電性連接的多個金屬柱21後，以將金屬柱21埋設在晶圓11的正面11a側之方式利用密封材23進行密封。
作為密封材23，包含以質量%表示的10.3%的環氧樹脂或環氧樹脂＋酚樹脂、8.53%的二氧化矽填充料、0.1~0.2%的炭黑，以及4.2~4.3%的其他成分之組成。作為其他成分，舉例而言包含金屬氫氧化物、三氧化二銻、二氧化矽等。
以如此組成的密封材23被覆晶圓11的正面11a並密封晶圓11的正面11a，則因為密封材23中含有極少量的炭黑而使密封材23變為黑色，一般難以通過密封材23看見晶圓11的正面11a。
在此密封材23中混入炭黑的原因，主要為了防止元件15的靜電破壞，現在市面並未販售不含有炭黑的密封材。
作為其他的實施方式，在元件晶圓11的正面11a上形成重佈層後，在重佈層上亦可形成對元件15中的電極17電性連接的金屬柱21。
接著，使用具有由單晶鑽石所組成的位元切割工具並稱之為平面切割裝置（鉋平機）或磨床（grinder）的研削裝置薄化密封材23。薄化密封材23後，例如藉由電漿蝕刻使金屬柱21的端面露出。
接著，在露出的金屬柱21的端面藉由周知的方法形成焊料等金屬凸塊25，並完成WL-CSP晶圓27。在本實施方式的WL-CSP晶圓27中，密封材23的厚度為100µm程度。
以雷射加工裝置加工WL-CSP晶圓27時，如圖3所示，較佳為WL-CSP晶圓27的外周部黏貼有黏貼於環狀框架F之作為黏著膠膜的切割膠膜T。藉此，WL-CSP晶圓27透過切割膠膜T成為支撐於環狀框架F的狀態。
但是，以雷射加工裝置加工WL-CSP晶圓27時，亦可不使用環狀框架F，利用在WL-CSP晶圓27的背面黏貼黏著膠膜的方式。
在本發明的晶圓加工方法中，首先，從WL-CSP晶圓27的正面側藉由紅外線攝像手段通過密封材23對元件晶圓11的正面11a攝像，並檢測在元件晶圓11的正面上形成的至少2個的目標圖案等的對準標記，基於這些對準標記檢測應進行切割的分割預定線13並實施對準步驟。
關於該對準步驟，參閱圖4進行詳細說明。在對準步驟中，如圖4所示，透過切割膠膜T在雷射加工裝置的卡盤台10吸引保持WL-CSP晶圓27，且使密封元件晶圓11的正面11a的密封材23在上方露出。並且，以夾具12夾住固定環狀框架F。
接著，以未圖示的雷射加工裝置的攝像單元14的紅外線攝像元件，通過WL-CSP晶圓27的密封材23對元件晶圓11的正面11a進行攝像。密封材23是由使攝像單元14的紅外線攝像手段所接收的紅外線穿透的密封材所構成，因此能檢測藉由紅外線攝像元件在元件晶圓11的表面11a形成的至少2個的目標圖案等的對準標記。
較佳為，採用高感度的InGaAs攝像元件作為紅外線攝像元件。較佳為，攝像單元14具備能調整曝光時間等的曝光器。
接著，以使連結這些對準標記的直線與加工進給方向平行的方式對卡盤台10進行θ旋轉，並進一步藉由將雷射加工裝置的雷射頭在與加工進給方向正交的方向上僅移動對準標記與分割預定線13的中心之距離，檢測應進行雷射加工的分割預定線13。
實施了對準步驟後，如圖5（A）所示，實施改質層形成步驟，即從WL-CSP晶圓27的正面側沿著分割預定線13，從雷射加工裝置的雷射頭（聚光器）16將對元件晶圓11及密封材23具有穿透性的波長（例如1064nm）之雷射光束LB的該聚光點定位於元件晶圓11的內部及密封材23的內部，藉由卡盤台10在箭頭X1方向或箭頭X2方向上加工進給，在元件晶圓的內部及密封材23的內部形成改質層29（29a，29b）。
在改質層形成步驟中，首先，如圖5（B）所示，將雷射光束LB的聚光點定位於元件晶圓11的內部，並藉由卡盤台10在箭頭X1方向上加工進給，在元件晶圓11的內部形成聚光點29a。
接著，如圖5（C）所示，將雷射光束LB的聚光點定位於密封材23的內部，並藉由將卡盤台10在箭頭X2方向上加工進給，在密封材23的內部形成聚光點29b。
沿著在第1方向伸長的分割預定線13在去程及返程間多次實施該改質層形成步驟後，90°旋轉卡盤台10，並沿著在正交第1方向的第2方向上伸長的分割預定線13在去程及返程間多次實施該改質層形成步驟。
實施了改質層形成步驟後，使用圖6所示的分割裝置50對WL-CSP晶圓27施加外力，並實施分割步驟，將WL-CSP晶圓27分割為一個個的元件晶片31。
如圖7所示的分割裝置50，具備：框架保持手段52，保持環狀框架F；以及膠膜擴張手段54，擴張在框架保持手段52中保持的環狀框架F上裝設的切割膠膜T。
框架保持手段52由環狀的框架保持構件56，以及作為配設於框架保持構件56的外周的固定手段之多個夾具58而構成。框架保持構件56的上表面形成載置環狀框架F的載置面56a，在該載置面56a上載置環狀框架F。
此外，載置面56a上載置的環狀框架F是藉由夾具58而固定於框架保持手段56。如此構成的框架保持手段52是藉由膠膜擴張手段54支撐而能在上下方向移動。
膠膜擴張手段54具備擴張鼓輪60，其配設於環狀的框架保持構件56的內側。擴張鼓輪60的上端以蓋62閉鎖。該擴張鼓輪60具有，比環狀框架F的內徑小，且比裝設於環狀框架F的切割膠膜T上所黏貼的WL-CSP晶圓27的外徑大的內徑。
擴張鼓輪60具有在其下端一體形成的支撐凸緣64。膠膜擴張手段54進一步具備驅動手段66，其在上下方向移動環狀的框架保持構件56。該驅動手段66由在支撐凸緣64上配設的多個的汽缸68所構成，該活塞桿70連結框架保持構件56的下表面。
由多個汽缸68所構成的驅動手段66，在基準位置與擴張位置之間往上下方向移動，其中該基準位置是將環狀的框架保持構件56在該載置面56a與擴張輪鼓60的上端的蓋62的正面大致同一高度的位置，該擴張位置是從擴張輪鼓60的上端至預定量下方的位置。
參閱圖7說明關於使用如以上之方式構成的分割裝置50實施的WL-CSP晶圓27的分割步驟。如圖7（A）所示，將透過切割膠膜T支撐WL-CSP晶圓27之環狀框架F載置於框架保持構件56的載置面56a上，並由夾具58固定於框架保持構件56。此時，框架保持構件56定位於該載置面56a與擴張輪鼓60的上端大致同一高度的基準位置。
接著，驅動汽缸68下降框架保持構件56至如圖7（B）所示的擴張位置。藉此，因被固定在框架保持構件56的載置面56a上的環狀框架F下降，故裝設在環狀框架F上的切割膠膜T抵接擴張輪鼓60的上端緣而主要在半徑方向上擴張。
此種結果，在黏貼於切割膠膜T的WL-CSP晶圓27上作用放射狀拉力。如此在WL-CSP晶圓27上作用放射狀拉力，則沿著分割預定線13在元件晶圓11中形成的改質層29a及在密封材23中形成的改質層29b成為分割起點，使WL-CSP晶圓27沿著分割預定線13如圖8的擴大剖面圖所示被割斷，分割為正面由密封材23密封的一個個的元件晶片31。
11‧‧‧元件晶圓13‧‧‧分割預定線14‧‧‧攝像單元15‧‧‧元件16‧‧‧雷射頭（聚光器）21‧‧‧金屬柱23‧‧‧密封材25‧‧‧凸塊27‧‧‧WL-CSP晶圓29，29A，29b‧‧‧改質層31‧‧‧元件晶片50‧‧‧分割裝置
圖1（A）係WL-CSP晶圓的分解立體圖，圖1（B）係WL-CSP晶圓的立體圖。 圖2係WL-CSP晶圓的放大剖面圖。 圖3係表示WL-CSP晶圓的外周部黏貼裝設於環狀框架的切割膠膜的樣子的立體圖。 圖4係表示對準步驟的剖面圖。 圖5（A）係表示改質層形成步驟的剖面圖，圖5（B）係在元件晶圓的內部定位聚光點的狀態的WL-CSP晶圓的局部放大剖面圖，圖5（C）係在密封材的內部定位聚光點的狀態的WL-CSP晶圓的局部放大剖面圖。 圖6係分割裝置的立體圖。 圖7係表示分割步驟的剖面圖。 圖8係實施分割步驟後的WL-CSP晶圓的局部放大剖面圖。
F‧‧‧環狀框架
T‧‧‧切割膠膜
10‧‧‧卡盤台
11‧‧‧元件晶圓
11a‧‧‧晶元的正面
12‧‧‧夾具
14‧‧‧攝像單元
23‧‧‧密封材
27‧‧‧WL-CSP晶圓

Claims (2)

  1. 一種晶圓加工方法，以密封材密封元件晶圓的正面，在該密封材的晶片區域上分別形成多個凸塊，該元件晶圓藉由在正面交叉形成的多條分割預定線劃分的該晶片區域上分別形成元件而成，該晶圓加工方法的特徵在於具備：對準步驟，從該元件晶圓的正面側藉由具備曝光器之紅外線攝像手段穿透該密封材，對該元件晶圓的正面側攝像並檢測對準標記，且基於該對準標記檢測應進行雷射加工的該分割預定線，其中該曝光器能調整曝光時間；改質層形成步驟，在實施了該對準步驟後，將對該元件晶圓及該密封材具有穿透性的波長之雷射光束的聚光點定位於該元件晶圓及該密封材的內部，從該元件晶圓的正面側沿著該分割預定線照射雷射光束，在該元件晶圓及該密封材的內部形成改質層；以及分割步驟，在實施了該改質層形成步驟後，對該元件晶圓及該密封材施加外力，並以該改質層作為分割起點分割為正面藉由密封材密封的一個個的元件晶片；該密封材具有使該紅外線攝像手段所接收的紅外線穿透般的穿透性；該密封材含有炭黑；該炭黑的含有率為0.1質量%以上0.2質量%以下。
  2. 如申請專利範圍第1項所述之晶圓加工方法，其中，在該對準步驟中使用的該紅外線攝像手段包含InGaAs攝像元件。
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