JP2019029654A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2019029654A JP2019029654A JP2018130809A JP2018130809A JP2019029654A JP 2019029654 A JP2019029654 A JP 2019029654A JP 2018130809 A JP2018130809 A JP 2018130809A JP 2018130809 A JP2018130809 A JP 2018130809A JP 2019029654 A JP2019029654 A JP 2019029654A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- pad
- semiconductor device
- chip
- upper insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
20 スクライブライン領域
21 カッティング領域
23 エッジ領域
30 テスト素子グループ
100 半導体基板
101 半導体集積回路
103 テスト構造体
110 下部絶縁膜
111 チップパッド
113 テストパッド
120 ダム構造体
130 上部絶縁膜
141 再配線チップパッド
143 再配線テストパッド
CLa、CLb 導電ライン
CPa、CPb 導電プラグ
Claims (23)
- チップ領域及びエッジ領域を含む半導体基板と、
前記半導体基板上に配置された下部絶縁膜と、
前記チップ領域の前記下部絶縁膜上に配置されたチップパッドと、
前記下部絶縁膜上に配置され、前記チップ領域で前記チップパッドを露出させる第1オープニング及び前記エッジ領域で前記下部絶縁膜を露出させる第2オープニングを有する上部絶縁膜と、
前記第1オープニング内で前記チップパッドと連結される再配線パッドと、を含み、
前記再配線パッドは、前記第1オープニング内に配置されるビア部分及び前記ビア部分から前記上部絶縁膜の上面に延長されるパッド部分を含む、
半導体装置。 - 前記下部絶縁膜は、前記上部絶縁膜より低い誘電率を有する誘電物質を含む、請求項1に記載の半導体装置。
- 前記第2オープニングの底面は、前記チップパッドの底面より低い、請求項1又は2に記載の半導体装置。
- 前記エッジ領域で、前記下部絶縁膜は、第1厚さを有する第1部分及び前記第1厚さより小さい第2厚さを有する第2部分を含む、請求項1乃至3のいずれか一項に記載の半導体装置。
- 前記チップ領域で前記下部絶縁膜は、第1厚さを有し、前記エッジ領域で前記下部絶縁膜の一部分は、前記第1厚さより小さい第2厚さを有する、請求項1乃至3のいずれか一項に記載の半導体装置。
- 前記チップ領域及び前記エッジ領域で前記下部絶縁膜は、実質的に均一な厚さを有する、請求項1又は2に記載の半導体装置。
- 前記第2オープニングの側壁に配置された残余スペーサーをさらに含み、前記残余スペーサーは、前記再配線パッドと同一な物質を含む、請求項1乃至6のいずれか一項に記載の半導体装置。
- 前記チップ領域の前記半導体基板上に提供された半導体集積回路と、
前記エッジ領域の前記半導体基板上に提供されたテスト構造体と、
前記半導体集積回路と前記チップパッドとを連結する金属配線と、をさらに含み、
前記下部絶縁膜は、前記半導体集積回路、前記テスト構造体、及び前記金属配線を覆う、請求項1乃至7のいずれか一項に記載の半導体装置。 - 前記金属配線は、前記再配線パッドと異なる金属物質を含む、請求項8に記載の半導体装置。
- 前記上部絶縁膜の前記第2オープニングは、前記テスト構造体とオーバーラップされる、請求項8又は9に記載の半導体装置。
- 前記上部絶縁膜は、前記チップパッドを覆う第1上部絶縁膜、前記第1上部絶縁膜上に積層された第2及び第3上部絶縁膜を含み、前記第2上部絶縁膜は、前記第1及び第3上部絶縁膜と異なる絶縁物質を含む、請求項1乃至10のいずれか一項に記載の半導体装置。
- 前記チップ領域の前記上部絶縁膜上に配置されて、前記再配線パッドの一部及び前記エッジ領域の前記上部絶縁膜の上面を露出させるパッシベーション層、をさらに含む請求項1に記載の半導体装置。
- 前記第2オープニングの側壁に配置され、前記再配線パッドと同一な物質を含む残余スペーサーをさらに含み、
前記パッシベーション層は、前記チップ領域から前記エッジ領域に延長されて前記残余スペーサーを覆う、請求項12に記載の半導体装置。 - チップ領域及びエッジ領域を含む半導体基板と、
前記半導体基板上に配置された下部絶縁膜と、
前記チップ領域の前記下部絶縁膜上に配置されたチップパッドと、
前記下部絶縁膜上で前記チップパッドを覆う上部絶縁膜と、
前記上部絶縁膜を貫通して前記チップパッドと連結される再配線パッドであって、当該再配線パッドは、前記上部絶縁膜内の前記チップパッドと接触するビア部分及び前記ビア部分から前記上部絶縁膜の上面に延長されるパッド部分を含む、再配線パッドと、を含み、
前記エッジ領域で前記上部絶縁膜は、リセス部を有する、
半導体装置。 - 前記下部絶縁膜は、前記上部絶縁膜より低い誘電率を有する誘電物質を含む、請求項14に記載の半導体装置。
- 前記チップ領域の前記半導体基板上に提供された半導体集積回路と、
前記エッジ領域の前記半導体基板上に提供されたテスト構造体と、
前記半導体集積回路と連結された金属配線と、をさらに含み、
前記下部絶縁膜は、前記半導体集積回路、前記金属配線、及び前記テスト構造体を覆い、
前記上部絶縁膜の前記リセス部は、前記テスト構造体とオーバーラップされる、請求項14又は15に記載の半導体装置。 - 前記エッジ領域の前記下部絶縁膜上に配置され、前記テスト構造体と連結されるテストパッドをさらに含み、
前記再配線パッドは、前記エッジ領域の前記上部絶縁膜を貫通して前記テストパッドと連結される再配線テストビアをさらに含み、
前記パッド部分は、前記チップ領域から前記エッジ領域に延長されて前記再配線テストビアと連結される、請求項16に記載の半導体装置。 - 前記チップ領域で前記下部絶縁膜は、第1厚さを有し、
前記エッジ領域で前記下部絶縁膜の一部分は、前記リセス部下で前記第1厚さより小さい第2厚さを有する、請求項14乃至17のいずれか一項に記載の半導体装置。 - 前記リセス部の底面は、前記チップ領域の前記上部絶縁膜の上面と前記チップ領域の前記下部絶縁膜の上面との間に位置する請求項14乃至17のいずれか一項に記載の半導体装置。
- 前記上部絶縁膜は、前記チップパッドを覆う第1上部絶縁膜、前記第1上部絶縁膜上に積層された第2及び第3上部絶縁膜を含み、
前記第2上部絶縁膜は、前記第1及び第3上部絶縁膜と異なる絶縁物質を含み、
前記上部絶縁膜の前記リセス部は、前記第2上部絶縁膜を露出させる、請求項14乃至17のいずれか一項に記載の半導体装置。 - 前記リセス部の側壁に配置された残余スペーサーをさらに含み、前記残余スペーサーは、前記再配線パッドと同一な物質を含む請求項14乃至20のいずれか一項に記載の半導体装置。
- 前記上部絶縁膜上に配置され、前記再配線パッドの一部及び前記エッジ領域の前記上部絶縁膜を露出させるパッシベーション層、をさらに含む請求項14乃至21のいずれか一項に記載の半導体装置。
- 前記上部絶縁膜上に配置され、前記再配線パッドの一部を露出させるパッシベーション層をさらに含み、
前記パッシベーション層は、前記チップ領域から前記エッジ領域に延長されて前記リセス部の側壁を覆う請求項14乃至21のいずれか一項に記載の半導体装置。
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KR20190012307A (ko) | 2019-02-11 |
SG10201803738UA (en) | 2019-02-27 |
US10665557B2 (en) | 2020-05-26 |
US20190035750A1 (en) | 2019-01-31 |
KR102428328B1 (ko) | 2022-08-03 |
CN109755214A (zh) | 2019-05-14 |
JP7017992B2 (ja) | 2022-02-09 |
CN109755214B (zh) | 2023-11-21 |
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