JP2019024082A - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
- Publication number
- JP2019024082A JP2019024082A JP2018111098A JP2018111098A JP2019024082A JP 2019024082 A JP2019024082 A JP 2019024082A JP 2018111098 A JP2018111098 A JP 2018111098A JP 2018111098 A JP2018111098 A JP 2018111098A JP 2019024082 A JP2019024082 A JP 2019024082A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- wiring
- memory
- peripheral
- memory unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 230000002093 peripheral effect Effects 0.000 claims abstract description 256
- 230000015654 memory Effects 0.000 claims abstract description 254
- 239000000758 substrate Substances 0.000 claims abstract description 134
- 239000003990 capacitor Substances 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims description 13
- 150000004770 chalcogenides Chemical class 0.000 claims description 5
- 230000002441 reversible effect Effects 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 description 65
- 101100031674 Arabidopsis thaliana NPF8.3 gene Proteins 0.000 description 23
- 101100235787 Schizosaccharomyces pombe (strain 972 / ATCC 24843) pim1 gene Proteins 0.000 description 23
- 101150114015 ptr-2 gene Proteins 0.000 description 23
- 239000012535 impurity Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 19
- 238000002513 implantation Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 125000006850 spacer group Chemical group 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 101100138677 Arabidopsis thaliana NPF8.1 gene Proteins 0.000 description 12
- 101150059273 PTR1 gene Proteins 0.000 description 12
- 101100262635 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) UBR1 gene Proteins 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- GMVPRGQOIOIIMI-UHFFFAOYSA-N (8R,11R,12R,13E,15S)-11,15-Dihydroxy-9-oxo-13-prostenoic acid Natural products CCCCCC(O)C=CC1C(O)CC(=O)C1CCCCCCC(O)=O GMVPRGQOIOIIMI-UHFFFAOYSA-N 0.000 description 9
- 229960000711 alprostadil Drugs 0.000 description 9
- GMVPRGQOIOIIMI-DWKJAMRDSA-N prostaglandin E1 Chemical compound CCCCC[C@H](O)\C=C\[C@H]1[C@H](O)CC(=O)[C@@H]1CCCCCCC(O)=O GMVPRGQOIOIIMI-DWKJAMRDSA-N 0.000 description 9
- XEYBRNLFEZDVAW-ARSRFYASSA-N dinoprostone Chemical compound CCCCC[C@H](O)\C=C\[C@H]1[C@H](O)CC(=O)[C@@H]1C\C=C/CCCC(O)=O XEYBRNLFEZDVAW-ARSRFYASSA-N 0.000 description 8
- 229960002986 dinoprostone Drugs 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- XEYBRNLFEZDVAW-UHFFFAOYSA-N prostaglandin E2 Natural products CCCCCC(O)C=CC1C(O)CC(=O)C1CC=CCCCC(O)=O XEYBRNLFEZDVAW-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- -1 tungsten nitride Chemical class 0.000 description 5
- 101100296570 Arabidopsis thaliana PCAP1 gene Proteins 0.000 description 4
- 101001080825 Homo sapiens PH and SEC7 domain-containing protein 1 Proteins 0.000 description 4
- 101001080808 Homo sapiens PH and SEC7 domain-containing protein 2 Proteins 0.000 description 4
- 101150040663 PGI1 gene Proteins 0.000 description 4
- 102100027472 PH and SEC7 domain-containing protein 1 Human genes 0.000 description 4
- 102100027455 PH and SEC7 domain-containing protein 2 Human genes 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 101100407167 Arabidopsis thaliana PCAP2 gene Proteins 0.000 description 3
- 101000862089 Clarkia lewisii Glucose-6-phosphate isomerase, cytosolic 1A Proteins 0.000 description 3
- 229910005900 GeTe Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- KAQKFAOMNZTLHT-OZUDYXHBSA-N prostaglandin I2 Chemical compound O1\C(=C/CCCC(O)=O)C[C@@H]2[C@@H](/C=C/[C@@H](O)CCCCC)[C@H](O)C[C@@H]21 KAQKFAOMNZTLHT-OZUDYXHBSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 229910018321 SbTe Inorganic materials 0.000 description 2
- 229910005642 SnTe Inorganic materials 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910017255 AsSe Inorganic materials 0.000 description 1
- 229910017259 AsTe Inorganic materials 0.000 description 1
- 229910017289 AsTeGeS Inorganic materials 0.000 description 1
- 229910017293 AsTeGeSe Inorganic materials 0.000 description 1
- 229910017292 AsTeGeSeSb Inorganic materials 0.000 description 1
- 229910017291 AsTeGeSeSi Inorganic materials 0.000 description 1
- 229910017290 AsTeGeSi Inorganic materials 0.000 description 1
- 229910017297 AsTeGeSiIn Inorganic materials 0.000 description 1
- 229910017296 AsTeGeSiP Inorganic materials 0.000 description 1
- 229910017295 AsTeGeSiSbP Inorganic materials 0.000 description 1
- 229910017294 AsTeGeSiSbS Inorganic materials 0.000 description 1
- 101100136727 Caenorhabditis elegans psd-1 gene Proteins 0.000 description 1
- 229910019007 CoSiN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016553 CuOx Inorganic materials 0.000 description 1
- 229910005554 GaTeSe Inorganic materials 0.000 description 1
- 229910006033 GeAsBiSe Inorganic materials 0.000 description 1
- 229910006036 GeAsBiTe Inorganic materials 0.000 description 1
- 229910006039 GeAsSbSe Inorganic materials 0.000 description 1
- 229910006107 GeBiTe Inorganic materials 0.000 description 1
- 229910006096 GeBiTeSe Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005865 GeSbTeSe Inorganic materials 0.000 description 1
- 229910005866 GeSe Inorganic materials 0.000 description 1
- 229910005918 GeTeSe Inorganic materials 0.000 description 1
- 229910005923 GeTeTi Inorganic materials 0.000 description 1
- 229910017947 MgOx Inorganic materials 0.000 description 1
- 101100215778 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) ptr-1 gene Proteins 0.000 description 1
- 229910005855 NiOx Inorganic materials 0.000 description 1
- 229910018314 SbSeBi Inorganic materials 0.000 description 1
- 229910018045 SbTeSe Inorganic materials 0.000 description 1
- 229910018216 SeTeGeSi Inorganic materials 0.000 description 1
- 229910018213 SeTeSn Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 229910007667 ZnOx Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- VTMHSJONDPRVMJ-UHFFFAOYSA-N strontium barium(2+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Sr++].[Zr+4].[Ba++] VTMHSJONDPRVMJ-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- PDGYMUBNWUUWEI-UHFFFAOYSA-N strontium zirconium Chemical compound [Sr].[Zr] PDGYMUBNWUUWEI-UHFFFAOYSA-N 0.000 description 1
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- FCCTVDGKMTZSPU-UHFFFAOYSA-N strontium;dioxido(oxo)zirconium Chemical compound [Sr+2].[O-][Zr]([O-])=O FCCTVDGKMTZSPU-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
- G11C14/0045—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
半導体デバイスは、第1デバイス領域及び第2デバイス領域を含む基板と、前記第1デバイス領域上の第1メモリ部と、前記第2デバイス領域上に提供され、平面から見る時、前記第1メモリ部から横に離隔される第2メモリ部と、を含むことができる。前記第1メモリ部はキャパシター構造体を含むことができる。前記第2メモリ部は前記基板上に2次元又は3次元的に配列される可変抵抗素子、及び前記可変抵抗素子に各々直列に接続される選択素子を含むことができる。前記可変抵抗素子及び前記選択素子は前記基板から前記キャパシター構造体より高い高さに提供されることができる。
第1メモリ部10はDRAMセルアレイ構造を含み、第2メモリ部60は可変抵抗メモリセルアレイ構造を含む。一例として、第1メモリ部10及び第2メモリ部60は別個のメインメモリとして各々機能することができる。他の例として、第1メモリ部10及び第2メモリ部60のうち1つはメインメモリとして機能し、第1メモリ部10及び第2メモリ部60のうち他の1つはバッファメモリとして機能することができる。
20 第1周辺回路部
30 第1配線部
40 第2周辺回路部
50 第2配線部
60 第2メモリ部
100 基板
102 第1周辺コンタクト
104 第1周辺配線
106 第2周辺コンタクト
108 第2周辺配線
110 導電コンタクト
120 バリアーパターン
130 導電ライン
140 キャッピングパターン
150 スペーサーパターン
160 第1層間絶縁膜
162 第2層間絶縁膜
170 埋め込みコンタクト
180 下部電極
185 支持構造体
190 誘電膜
200 上部電極
210 第1配線パターン
212 第1配線コンタクト
220 第2配線パターン
222 第2配線コンタクト
1000 半導体デバイス
ACT セル活性領域
CAS キャパシター構造体
GE ゲート電極
GS ゲート構造体
MCA メモリセルスタック
PACT1 第1周辺活性領域
PACT2 第2周辺活性領域
PGE1 第1周辺ゲート電極
PGE2 第2周辺ゲート電極
PGSP1 第1周辺ゲートスペーサー
PGSP2 第2周辺ゲートスペーサー
PSD1 第1周辺ソース/ドレイン領域
PSD2 第2周辺ソース/ドレイン領域
PTR1 第1周辺トランジスタ
PTR2 第2周辺トランジスタ
SD1 第1不純物注入領域
SD2 第2不純物注入領域
ST 素子分離膜
Claims (24)
- 基板上に並べて配置される第1メモリ部、第1周辺回路部、及び第2周辺回路部と、
平面から見る時、前記第2周辺回路部の一側に提供され、前記第1メモリ部から横に離隔される第2メモリ部と、を含み、
前記第1メモリ部は、複数の第1メモリセルを含み、前記第1メモリセルの各々は、セルトランジスタ及び前記セルトランジスタの一端子に接続されるキャパシターを含み、
前記第2メモリ部は、複数の第2メモリセルを含み、前記第2メモリセルの各々は、互いに直列に接続される可変抵抗素子及び選択素子を含み、
前記第2メモリセルは、前記基板から前記キャパシターより高い高さに提供される、半導体デバイス。 - 前記第2メモリセルの各々の前記可変抵抗素子及び前記選択素子は、前記基板から前記キャパシターより高い高さに提供される、請求項1に記載の半導体デバイス。
- 前記第2メモリ部は、第1導電ライン、及び前記第1導電ラインを横切る第2導電ラインを含み、
前記第2メモリセルは、前記第1導電ラインと前記第2導電ラインとの間に提供され、前記第1導電ラインと前記第2導電ラインとの交差点に各々提供される、請求項2に記載の半導体デバイス。 - 前記可変抵抗素子は、結晶質と非晶質との間の可逆的相変化が可能である物質を含み、
前記選択素子は、非晶質のカルコゲナイド物質を含む、請求項2又は3に記載の半導体デバイス。 - 前記キャパシターは、
前記セルトランジスタの前記端子に接続される下部電極と、
前記下部電極を覆う上部電極と、
前記下部電極と前記上部電極との間の誘電膜と、を含む、請求項1乃至4のいずれか一項に記載の半導体デバイス。 - 前記第1メモリ部上の第1配線部と、
前記第2メモリ部上の第2配線部と、をさらに含み、
前記第1配線部の第1配線パターン、及び前記第2配線部の第2配線パターンは、前記基板から前記キャパシターより高い高さに提供される、請求項1乃至5のいずれか一項に記載の半導体デバイス。 - 前記第2配線パターンのうち少なくとも一部は、前記基板から前記第1配線パターンのうち少なくとも一部と同一な高さに提供される、請求項6に記載の半導体デバイス。
- 前記第2配線パターンのうち少なくとも一部は、前記基板から前記第2メモリセルより高い高さに提供される、請求項6又は7に記載の半導体デバイス。
- 前記第1周辺回路部は、第1周辺トランジスタを含み、前記第2周辺回路部は、第2周辺トランジスタを含み、
前記第2周辺トランジスタは、前記基板から前記第1周辺トランジスタと同一な高さに提供される、請求項1乃至8のいずれか一項に記載の半導体デバイス。 - 前記第1周辺トランジスタは、前記第1メモリセルを駆動するための第1周辺回路を構成し、
前記第2周辺トランジスタは、前記第2メモリセルを駆動するための第2周辺回路を構成する、請求項9に記載の半導体デバイス。 - 第1デバイス領域及び第2デバイス領域を含む基板と、
前記第1デバイス領域上の第1メモリ部と、
前記第2デバイス領域上に提供され、平面から見る時、前記第1メモリ部から横に離隔される第2メモリ部と、を含み、
前記第1メモリ部は、キャパシター構造体を含み、
前記第2メモリ部は、
前記基板上に2次元又は3次元的に配列される可変抵抗素子と、
前記可変抵抗素子に各々直列に接続される選択素子と、を含み、
前記可変抵抗素子及び前記選択素子は、前記基板から前記キャパシター構造体より高い高さに提供される、半導体デバイス。 - 前記キャパシター構造体は、
複数の下部電極と、
前記複数の下部電極を共通に覆う上部電極と、
前記複数の下部電極の各々と前記上部電極との間の誘電膜と、を含む、請求項11に記載の半導体デバイス。 - 前記第2メモリ部は、第1導電ライン、及び前記第1導電ラインを横切る第2導電ラインを含み、
前記可変抵抗素子の各々及び前記選択素子の各々は、前記第1導電ラインのうち対応する第1導電ラインと前記第2導電ラインのうち対応する第2導電ラインとの間で互いに直列に接続される、請求項11又は12に記載の半導体デバイス。 - 前記可変抵抗素子の各々及び前記選択素子の各々は、PRAMセルを構成する請求項13に記載の半導体デバイス。
- 前記第1デバイス領域上に提供され、前記第1メモリ部の少なくとも一側に配置される第1周辺回路部と、
前記第2デバイス領域上に提供され、平面から見る時、前記第2メモリ部の少なくとも一側に配置される第2周辺回路部と、をさらに含み、
前記第1周辺回路部の第1周辺トランジスタ、及び前記第2周辺回路部の第2周辺トランジスタは、前記基板から互いに同一な高さに提供される、請求項11乃至14のいずれか一項に記載の半導体デバイス。 - 前記第1デバイス領域及び前記第2デバイス領域上に各々提供される第1配線部及び第2配線部をさらに含み、
前記第1配線部の第1配線パターン、及び前記第2配線部の第2配線パターンは、前記基板から前記キャパシター構造体より高い高さに提供される、請求項15に記載の半導体デバイス。 - 前記第2配線パターンのうち少なくとも一部は、前記基板から前記可変抵抗素子及び前記選択素子より高い高さに提供される、請求項16に記載の半導体デバイス。
- 前記第1周辺トランジスタは、前記第1配線パターンのうち対応する第1配線パターンに電気的に接続され、前記第2周辺トランジスタは、前記第2配線パターンのうち対応する第2配線パターンに電気的に接続される、請求項16又は17に記載の半導体デバイス。
- 前記第1メモリ部は、前記基板と前記第1配線部との間に提供され、
前記第2メモリ部は、前記基板と前記第2配線部との間に提供される、請求項16乃至18のいずれか一項に記載の半導体デバイス。 - 前記可変抵抗素子は、結晶質と非晶質との間の可逆的相変化が可能である物質を含み、
前記選択素子は、非晶質のカルコゲナイド物質を含む、請求項11乃至19のいずれか一項に記載の半導体デバイス。 - 基板と、
前記基板上に、第1方向に沿って互いに横に配置される第1メモリ部及び第1周辺回路部と、
前記第1メモリ部及び前記第1周辺回路部上に配置される第1配線部と、
前記基板上に、前記第1方向に沿って互いに横に配置される第2メモリ部及び第2周辺回路部と、
前記第1方向に垂直な第2方向に沿って前記第2メモリ部上に配置される第2配線部と、を含む半導体デバイス。 - 前記第1周辺回路部の第1周辺トランジスタ、及び前記第2周辺回路部の第2周辺トランジスタは、前記基板に対して同一な高さに提供される、請求項21に記載の半導体デバイス。
- 前記第2メモリ部のメモリセルは、前記第1メモリ部のキャパシターより前記基板から高い高さにある、請求項21又は22に記載の半導体デバイス。
- 前記第2配線部のラインパターン及びラインコンタクトは、前記第1メモリ部のキャパシターより前記基板から高い高さにある、請求項21乃至23のいずれか一項に記載の半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0092880 | 2017-07-21 | ||
KR1020170092880A KR102368449B1 (ko) | 2017-07-21 | 2017-07-21 | 반도체 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019024082A true JP2019024082A (ja) | 2019-02-14 |
JP7096710B2 JP7096710B2 (ja) | 2022-07-06 |
Family
ID=64951480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018111098A Active JP7096710B2 (ja) | 2017-07-21 | 2018-06-11 | 半導体デバイス |
Country Status (5)
Country | Link |
---|---|
US (2) | US10395706B2 (ja) |
JP (1) | JP7096710B2 (ja) |
KR (1) | KR102368449B1 (ja) |
CN (1) | CN109285857B (ja) |
DE (1) | DE102018110980B4 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11495295B2 (en) | 2021-02-17 | 2022-11-08 | Kioxia Corporation | Variable resistance memory device |
JP2022181756A (ja) * | 2021-05-27 | 2022-12-08 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812502B2 (en) * | 2015-08-31 | 2017-11-07 | Toshiba Memory Corporation | Semiconductor memory device having variable resistance elements provided at intersections of wiring lines |
KR102293121B1 (ko) * | 2017-07-14 | 2021-08-26 | 삼성전자주식회사 | 반도체 소자 |
KR102368449B1 (ko) * | 2017-07-21 | 2022-03-02 | 삼성전자주식회사 | 반도체 소자 |
KR102293120B1 (ko) | 2017-07-21 | 2021-08-26 | 삼성전자주식회사 | 반도체 소자 |
CN110534146A (zh) * | 2019-08-02 | 2019-12-03 | 北京大学 | 阻变式存储器的操作电路及操作方法 |
CN116209279A (zh) * | 2021-11-30 | 2023-06-02 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243632A (ja) * | 2002-02-19 | 2003-08-29 | Seiko Epson Corp | 強誘電体メモリ装置およびその製造方法 |
JP2006295130A (ja) * | 2005-03-15 | 2006-10-26 | Elpida Memory Inc | メモリ装置及びその製造方法 |
JP2014082287A (ja) * | 2012-10-15 | 2014-05-08 | Panasonic Corp | 半導体記憶装置、その製造方法及びモバイル端末 |
US8995173B1 (en) * | 2011-09-29 | 2015-03-31 | Adesto Technologies Corporation | Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements |
JP2017085103A (ja) * | 2015-10-27 | 2017-05-18 | 三星電子株式会社Samsung Electronics Co.,Ltd. | メモリ素子及び半導体素子 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6259126B1 (en) * | 1999-11-23 | 2001-07-10 | International Business Machines Corporation | Low cost mixed memory integration with FERAM |
JP4005000B2 (ja) * | 2003-07-04 | 2007-11-07 | 株式会社東芝 | 半導体記憶装置及びデータ書き込み方法。 |
US8901704B2 (en) | 2006-04-21 | 2014-12-02 | SK Hynix Inc. | Integrated circuit and manufacturing method thereof |
KR20090110556A (ko) | 2008-04-18 | 2009-10-22 | 주식회사 하이닉스반도체 | 집적회로 및 그 형성 방법 |
KR101120676B1 (ko) | 2008-12-11 | 2012-03-23 | 이상윤 | 반도체 메모리 장치의 제조 방법 |
JP2010165803A (ja) * | 2009-01-14 | 2010-07-29 | Toshiba Corp | 半導体記憶装置の製造方法及び半導体記憶装置 |
KR101022580B1 (ko) | 2009-02-19 | 2011-03-16 | 이상윤 | 대용량 반도체 메모리 장치 및 그 제조 방법 |
JP5731341B2 (ja) | 2011-09-26 | 2015-06-10 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置、半導体装置及び半導体記憶装置の製造方法 |
US9619357B2 (en) | 2011-09-28 | 2017-04-11 | International Business Machines Corporation | Hybrid storage devices |
US8896096B2 (en) | 2012-07-19 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process-compatible decoupling capacitor and method for making the same |
JP2014082267A (ja) | 2012-10-15 | 2014-05-08 | Auto Network Gijutsu Kenkyusho:Kk | コイル |
US9246100B2 (en) * | 2013-07-24 | 2016-01-26 | Micron Technology, Inc. | Memory cell array structures and methods of forming the same |
KR102192539B1 (ko) * | 2014-05-21 | 2020-12-18 | 삼성전자주식회사 | 반도체 장치 및 이의 프로그램 방법 |
US10008265B2 (en) | 2014-09-06 | 2018-06-26 | NEO Semiconductor, Inc. | Method and apparatus for providing three-dimensional integrated nonvolatile memory (NVM) and dynamic random access memory (DRAM) memory device |
JP6466148B2 (ja) | 2014-11-19 | 2019-02-06 | 東芝メモリ株式会社 | 半導体記憶装置 |
KR101816817B1 (ko) | 2016-02-04 | 2018-01-11 | 아사아블로이코리아 주식회사 | 플로어 힌지 및 이를 위한 해지력 조절장치 |
US10468103B2 (en) * | 2016-12-01 | 2019-11-05 | Samsung Electronics Co., Ltd. | Integrated circuit devices including separate memory cells on separate regions of individual substrate |
KR102368449B1 (ko) * | 2017-07-21 | 2022-03-02 | 삼성전자주식회사 | 반도체 소자 |
-
2017
- 2017-07-21 KR KR1020170092880A patent/KR102368449B1/ko active IP Right Grant
-
2018
- 2018-05-08 DE DE102018110980.6A patent/DE102018110980B4/de active Active
- 2018-05-21 US US15/984,914 patent/US10395706B2/en active Active
- 2018-06-11 JP JP2018111098A patent/JP7096710B2/ja active Active
- 2018-06-28 CN CN201810691309.8A patent/CN109285857B/zh active Active
-
2019
- 2019-07-02 US US16/460,284 patent/US10580469B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243632A (ja) * | 2002-02-19 | 2003-08-29 | Seiko Epson Corp | 強誘電体メモリ装置およびその製造方法 |
JP2006295130A (ja) * | 2005-03-15 | 2006-10-26 | Elpida Memory Inc | メモリ装置及びその製造方法 |
US8995173B1 (en) * | 2011-09-29 | 2015-03-31 | Adesto Technologies Corporation | Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements |
JP2014082287A (ja) * | 2012-10-15 | 2014-05-08 | Panasonic Corp | 半導体記憶装置、その製造方法及びモバイル端末 |
JP2017085103A (ja) * | 2015-10-27 | 2017-05-18 | 三星電子株式会社Samsung Electronics Co.,Ltd. | メモリ素子及び半導体素子 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11495295B2 (en) | 2021-02-17 | 2022-11-08 | Kioxia Corporation | Variable resistance memory device |
US11756617B2 (en) | 2021-02-17 | 2023-09-12 | Kioxia Corporation | Variable resistance memory device |
JP2022181756A (ja) * | 2021-05-27 | 2022-12-08 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
DE102018110980A1 (de) | 2019-01-24 |
CN109285857A (zh) | 2019-01-29 |
JP7096710B2 (ja) | 2022-07-06 |
US20190325930A1 (en) | 2019-10-24 |
KR20190010806A (ko) | 2019-01-31 |
US10395706B2 (en) | 2019-08-27 |
CN109285857B (zh) | 2023-06-20 |
DE102018110980B4 (de) | 2021-09-16 |
US10580469B2 (en) | 2020-03-03 |
KR102368449B1 (ko) | 2022-03-02 |
US20190027200A1 (en) | 2019-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7096710B2 (ja) | 半導体デバイス | |
JP7321677B2 (ja) | 半導体素子 | |
USRE47506E1 (en) | Variable resistance memory device | |
US20240306400A1 (en) | Semiconductor memory device | |
US10720211B2 (en) | Semiconductor devices | |
CN109216402B (zh) | 可变电阻存储器件及形成可变电阻存储器件的方法 | |
US20130187119A1 (en) | Semiconductor Memory Devices Having Strapping Contacts | |
US20220271091A1 (en) | Variable resistance memory device | |
US11895850B2 (en) | Variable resistance memory device | |
US20220005869A1 (en) | Semiconductor memory device | |
US11362141B2 (en) | Variable resistance memory device | |
KR102659941B1 (ko) | 가변 저항 메모리 소자 및 그 제조 방법 | |
US11672132B2 (en) | Variable resistance memory device | |
KR20210155735A (ko) | 반도체 메모리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210412 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220310 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220609 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220621 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220624 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7096710 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |