JP2019021695A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP2019021695A JP2019021695A JP2017136953A JP2017136953A JP2019021695A JP 2019021695 A JP2019021695 A JP 2019021695A JP 2017136953 A JP2017136953 A JP 2017136953A JP 2017136953 A JP2017136953 A JP 2017136953A JP 2019021695 A JP2019021695 A JP 2019021695A
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- Prior art keywords
- wafer
- polishing pad
- gettering
- polishing
- fine particles
- Prior art date
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- Granted
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- 238000003672 processing method Methods 0.000 title claims description 10
- 238000005498 polishing Methods 0.000 claims abstract description 162
- 238000005247 gettering Methods 0.000 claims abstract description 86
- 239000010419 fine particle Substances 0.000 claims abstract description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000003746 solid phase reaction Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000004745 nonwoven fabric Substances 0.000 claims abstract description 7
- 239000012670 alkaline solution Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 9
- 239000011230 binding agent Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000006748 scratching Methods 0.000 claims description 2
- 230000002393 scratching effect Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 16
- 239000003513 alkali Substances 0.000 abstract description 3
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 239000008367 deionised water Substances 0.000 abstract 2
- 229910021641 deionized water Inorganic materials 0.000 abstract 2
- 238000007790 scraping Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 26
- 238000000227 grinding Methods 0.000 description 15
- 239000002585 base Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Abstract
Description
21 チャックテーブル
23 保持面
46 支持基台
47 研磨パッド
48 研磨工具
61 研磨用アルカリ溶液供給源
62 低温純水供給源
65、66 バルブ
81 固相反応微粒子
82 ゲッタリング用微粒子
T 保護テープ(保護部材)
W ウエーハ
W1 (ウエーハの)表面
W2 (ウエーハの)裏面
Claims (1)
- シリコン基板の表面にデバイスが形成されたウエーハの裏面に金属イオンの誘導を規制するゲッタリング層を形成するウエーハの加工方法であって、
ウエーハの表面に保護部材を貼着し、チャックテーブルの保持面に該保護部材側を保持するウエーハ保持工程と、
シリコンと固相反応を誘発する固相反応微粒子と、シリコンよりモース硬度が高くゲッタリング層を形成するゲッタリング用微粒子とを液状結合剤に混入して不織布に含浸させ乾燥してなる研磨パッドを回転するとともに、該チャックテーブルを回転させながら該研磨パッドにpH10以上12以下のアルカリ溶液を供給しつつ、ウエーハの裏面を研磨してウエーハの裏面の歪層を除去する歪層除去工程と、
該歪層除去工程を実施した後に、該アルカリ溶液の供給を停止して該研磨パッドに常温よりも低い水温の純水を供給しつつ該研磨パッドを回転するとともに該チャックテーブルを回転させながら、該不織布の硬度が増した該研磨パッドによってウエーハの裏面を研磨することにより裏面に傷を付けてゲッタリング層を形成するゲッタリング層形成工程と、を含むことを特徴とするウエーハの加工方法。
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JP2017136953A JP6960788B2 (ja) | 2017-07-13 | 2017-07-13 | ウエーハの加工方法 |
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JP2017136953A JP6960788B2 (ja) | 2017-07-13 | 2017-07-13 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2019021695A true JP2019021695A (ja) | 2019-02-07 |
JP6960788B2 JP6960788B2 (ja) | 2021-11-05 |
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JP2017136953A Active JP6960788B2 (ja) | 2017-07-13 | 2017-07-13 | ウエーハの加工方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009154285A (ja) * | 2007-12-03 | 2009-07-16 | Ebara Corp | 研磨装置および研磨方法 |
JP2013247132A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | 板状物の加工方法 |
JP2013244537A (ja) * | 2012-05-23 | 2013-12-09 | Disco Corp | 板状物の加工方法 |
JP2014076533A (ja) * | 2012-09-24 | 2014-05-01 | Ebara Corp | 研磨方法および研磨装置 |
JP2015046550A (ja) * | 2013-08-29 | 2015-03-12 | 株式会社ディスコ | 研磨パッドおよびウエーハの加工方法 |
-
2017
- 2017-07-13 JP JP2017136953A patent/JP6960788B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009154285A (ja) * | 2007-12-03 | 2009-07-16 | Ebara Corp | 研磨装置および研磨方法 |
JP2013247132A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | 板状物の加工方法 |
JP2013244537A (ja) * | 2012-05-23 | 2013-12-09 | Disco Corp | 板状物の加工方法 |
JP2014076533A (ja) * | 2012-09-24 | 2014-05-01 | Ebara Corp | 研磨方法および研磨装置 |
JP2015046550A (ja) * | 2013-08-29 | 2015-03-12 | 株式会社ディスコ | 研磨パッドおよびウエーハの加工方法 |
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