JP2018531776A - 微結晶性セルロース熱分解生成物吸着剤並びにこれを作製及び使用する方法 - Google Patents
微結晶性セルロース熱分解生成物吸着剤並びにこれを作製及び使用する方法 Download PDFInfo
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- JP2018531776A JP2018531776A JP2018509847A JP2018509847A JP2018531776A JP 2018531776 A JP2018531776 A JP 2018531776A JP 2018509847 A JP2018509847 A JP 2018509847A JP 2018509847 A JP2018509847 A JP 2018509847A JP 2018531776 A JP2018531776 A JP 2018531776A
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Landscapes
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Abstract
Description
「MICROCRYSTALLINE CELLULOSE PYROLYZATE ADSORBENT AND GAS SUPPLY PACKAGES COMPRISING SAME」について2016年8月22日にEdward A.Sturmらの名前で出願された米国特許仮出願第62/208663号の米国特許法第119条の利益が本明細書により主張される。米国特許仮出願第62/208663号の開示は、これにより全ての目的のために出典明示によりその全文が本明細書に援用される。
天然トウモロコシデンプンの供給を得、この供給物から採取したデンプンのサンプルを秤量し、実験室の空気炉で195℃に加熱して、そのような前駆体材料を乾燥させ、安定化させた。次に、乾燥したデンプンを600℃の管炉内で窒素流下で熱分解した。冷却後、トウモロコシデンプン由来の炭素熱分解生成物のN2 BET表面積を、Micromeritics ASAP 2420 Porosimeterを使用して、578m2/gと測定した。
工業用トウモロコシデンプン由来のマルトデキストリンの供給を得た。マルトデキストリンのサンプルを秤量し、実験室の空気炉で加熱して、235℃の温度でサンプルを乾燥させ、安定化させた。乾燥したマルトデキストリンを、次に600℃の温度の管路中、窒素気流下で熱分解した。冷却後、Micromeritics ASAP 2420 Porosimeterを使用して、トウモロコシデンプン由来のマルトデキストリン炭素をN2 BET表面積について分析した。465m2/グラムの表面積が決定された。
実施例2で考察されるトウモロコシデンプン由来のマルトデキストリンと混合した、実施例1で考察される天然のトウモロコシデンプンを様々な比で組み合わせる円筒形のタブレットを、28から338MPa(〜4050psiから49,000psi)の間の圧縮条件下で形成して、プリフォームタブレットを得た。タブレットを秤量し、測定し、いくつかの方法で強度及びその他の重要な物理的特性について評価した。
デンプン由来の炭素のサンプルを、三フッ化ホウ素吸着容量の試験のために数個選択した。この大型の平らな分子は微孔性炭素においてスリット状の多孔性の良好な評価を提供するためである。全てのデンプン由来の炭素サンプルを、600℃の温度の管路中、窒素気流下で熱分解した。次に、各々を600℃から1000℃の間の温度でCO2中で酸化的に活性化させ、表面積を増加させて1000平方メートル/グラムよりも大きくした。
セルロース系並びに非セルロース系前駆体材料を吸着剤として有用な炭素熱分解生成物材料の形成について評価した。微結晶性セルロースは、前駆体材料として糖類、デンプン、キチン、キトサン、ペクチン、及びマルトデキストリンと共に評価した。この試みで考えられる微結晶性セルロース材料には、Acros Organics(サーモフィッシャーサイエンティフィック、http://www.acros.com)、及び微結晶性セルロース−Ultra Pure Powder(アビセル(登録商標)PH−101、シグマ−アルドリッチ Co.,LLC)、から商業的に入手可能な、結晶の大きさが約50μmの無水セルロース微結晶性粉末が含まれた。
Claims (75)
- 半導体製品、フラットパネルディスプレイ、及びソーラーパネルからなる群から選択される製品の製造のためのガスをその上に可逆的に吸着させるセルロース系炭素熱分解生成物。
- 木材パルプ、おが屑、新聞印刷用紙、ヤシ殻、オリーブの種、モモの種、アンズ核、ビスコース、ビスコースレーヨン、コットン、コットンリンター、アルガンの殻、マカダミアナッツ殻、酢酸セルロース、バクテリアセルロース、リグニン、リンボクの種、クルミ殻、ナツメヤシの種、籾殻、コーヒーの実の皮、コーヒー滓、バガス、ソルガム雑穀藁、竹材、マンゴー核、アーモンド殻、トウモロコシ穂軸、サクランボの種、及びブドウ種子の1以上の熱分解生成物を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 微結晶性セルロースの熱分解生成物を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスが、水素化物、ハロゲン化物、有機金属、水素、CO2、CO、C2−C4炭化水素、及び前述の2以上の混合物からなる群から選択される1以上を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスが、エタン、エチレン、プロパン、プロピレン、ブタン、及びブチレンからなる群から選択される1以上を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスが、アルシン、ホスフィン、ゲルマン、ジボラン、シラン、ジシラン、トリメチルシラン、テトラメチルシラン、C2−C4炭化水素、アセチレン、水素、スチビン、三塩化ホウ素、三フッ化ホウ素、四フッ化二ホウ素、三フッ化窒素、四フッ化ゲルマニウム、四フッ化ケイ素、三フッ化ヒ素、五フッ化ヒ素、三フッ化ホスフィン、五フッ化リン、フッ素、塩素、フッ化水素、硫化水素、セレン化水素、テルル化水素、ハロゲン化メタン、ハロゲン化エタン、アレン、スタンナン、トリシラン、アンモニア、一酸化炭素、二酸化炭素、フッ化カルボニル、亜酸化窒素、前述の同位体が濃縮された変異体、及び前述の2以上の組合せからなる群から選択される1以上を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスが水素化物ガスを含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスがハロゲン化物ガスを含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスがガス状有機金属を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスが、(i)水素化物、(ii)ハロゲン化物、(iii)有機金属、(iv)水素、(v)二酸化炭素、(vi)一酸化炭素、(vii)メタン、(viii)天然ガス、(ix)エタン、(x)エチレン、(xi)プロパン、(xii)プロピレン、(xiii)ブタン、(xiv)ブチレン、及びこれらのガスの2以上の組合せからなる群から選択されるガスを含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記ガスが半導体製造ガスを含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記半導体製造ガスが、イオン注入用のドーパントガス、蒸着プロセスのための前駆体、エッチング剤、洗浄試薬、前述の2以上のガス混合物、並びに、共流ガス、キャリアガス、及び希釈剤の1以上と組み合わせた前述の1以上のガスを含むガス混合物からなる群から選択されるガスを含む、請求項11に記載のセルロース系炭素熱分解生成物。
- 以下の特性:ASTM D2866−11の手順によって測定して0.5%未満の全灰含有量を有する;片密度が0.55g/ccから1.35g/ccである;片密度が0.60g/ccから1.30g/ccである;嵩密度が0.5g/ccから1.3g/ccである;前記吸着剤が結合剤を含まない;N2 BET表面積が750から3000m2/グラムの範囲内である;0.3nmから2.0nmの範囲のサイズを有するマイクロ孔が細孔容積の少なくとも40%を有する;0.3nmから2.0nmの範囲のサイズを有するマイクロ孔が細孔容積の少なくとも70%を有する;0.3nmから2.0nmの範囲のサイズを有するマイクロ孔が細孔容積の40%から90%又はそれ以上を有する;メタン吸着容量が21℃及び35バールの圧力で110V/Vよりも大きい;メタン吸着容量が21℃及び35バールの圧力で125V/Vよりも大きい;メタン吸着容量が21℃及び35バールの圧力で140V/Vから220V/Vの範囲内である;且つ、35バールと1バールとの間のメタン吸着作業/デルタ容量が少なくとも75V/V、例えば、75から125V/Vの範囲内である特性の1以上を特徴とする、請求項1に記載のセルロース系炭素熱分解生成物。
- ASTM D2866−11の手順によって測定して1%未満の全灰含有量;0.50g/ccから1.40g/ccの範囲の片密度;750m2/グラムよりも大きいN2 BET表面積;及び21℃及び35バールの圧力で100V/Vよりも大きいメタン吸着容量を特徴とする、請求項1に記載のセルロース系炭素熱分解生成物。
- 35バール(508psig)及び21℃で少なくとも100V/Vのメタン吸着容量を特徴とする、請求項1に記載のセルロース系炭素熱分解生成物。
- モノリシックな形態の、請求項1に記載のセルロース系炭素熱分解生成物。
- 微粒子の形態の、請求項1に記載のセルロース系炭素熱分解生成物。
- メソ孔及び/又はマクロ孔の細孔容積の60%未満を含む多孔度を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 少なくとも1.1g/ccの密度、並びに圧力35バール及び温度21℃で少なくとも140V/Vのメタン容量を特徴とする、請求項1に記載のセルロース系炭素熱分解生成物。
- 750m2/gよりも大きい表面積、0.75g/ccよりも大きい片密度、及び0.5g/ccよりも大きい嵩密度を特徴とする、請求項1に記載のセルロース系炭素熱分解生成物。
- 少なくとも750m2/gのN2 BET表面積を特徴とする、請求項1に記載のセルロース系炭素熱分解生成物。
- 0.3nmから2.0nmの間の大きさの細孔で構成される細孔容積の少なくとも50%を含む多孔度を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- セルロース前駆体材料及び1以上の非セルロース前駆体材料の熱分解生成物を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記1以上の非セルロース前駆体材料が、合成高分子材料、石油系材料、石油由来材料、セルロース以外の炭水化物、並びに前述の組合せ、ブレンド、及び混合物からなる群から選択される、請求項23に記載のセルロース系炭素熱分解生成物。
- 前記1以上の非セルロース前駆体材料が、ポリ塩化ビニリデンポリマー及び共重合体、並びにポリフッ化ビニリデンポリマー及び共重合体からなる群から選択される、請求項24に記載のセルロース系炭素熱分解生成物。
- 前記1以上の非セルロース前駆体材料が、デンプン及びマルトデキストリンからなる群から選択される、請求項24に記載のセルロース系炭素熱分解生成物。
- 2以上の異なるセルロース材料を含むセルロース前駆体材料の熱分解生成物を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- セルロース前駆体材料の濃度が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて少なくとも50重量%である、請求項23に記載のセルロース系炭素熱分解生成物。
- 化学的及び/又は物理的活性化によって活性化される熱分解生成物を含む、請求項1に記載のセルロース系炭素熱分解生成物。
- 前記熱分解生成物が、600℃から1200℃の範囲の温度の、不活性ガスと混合しているか又は純粋なガス流れとしてのCO2、空気、又は蒸気に曝露させる際のバーンオフによって活性化された、請求項29に記載のセルロース系炭素熱分解生成物。
- 請求項1から30の何れか一項に記載のセルロース系炭素熱分解生成物を含有するガス貯蔵分配容器を含むガス供給パッケージ。
- 請求項31に記載のガス供給パッケージから前記製造のためのガスを供給することを含む、半導体製品、フラットパネルディスプレイ、及びソーラーパネルからなる群から選択される製品を製造する方法。
- 前記製品を製造するためのプロセスで用いるために、請求項31に記載のガス供給パッケージを提供することを含む、半導体製品、フラットパネルディスプレイ、及びソーラーパネルからなる群から選択される製品を製造するためのガスを供給する方法。
- 使用用にパッケージ化されたガスを供給する方法において、前記方法が請求項1から30の何れか一項に記載のガス供給パッケージにセルロース系炭素熱分解生成物をパッケージングすることを含む、方法。
- ガス精製装置であって、内部容積を規定し、その中を通るガスの流れに適合したハウジングと、前記ガスを吸着精製するために前記ハウジングの中を通る前記ガスと接触するように配置された、前記ハウジングの前記内部容積中の請求項1から30の何れか一項に記載のセルロース系炭素熱分解生成物吸着剤とを含む、ガス精製装置。
- 半導体製品、フラットパネルディスプレイ、及びソーラーパネルからなる群から選択される製品を製造するための精製ガスを供給する方法であって、請求項35に記載の1以上のガス精製装置の使用を含む、方法。
- 空気濾過装置及び/又は精製装置であって、空気中不純物の吸着除去のためにハウジングの中へ方向づけられた空気流と接触するように配置された、請求項1から30の何れか一項に記載のセルロース系炭素熱分解生成物吸着剤を含む濾過材料を保持する前記ハウジングを含む、空気濾過装置及び/又は精製装置。
- ガス供給パッケージにおいて、ガスをその上に吸着させた状態で可逆的に保持し、前記ガス供給パッケージの分配条件下で前記容器から放出するためにガスを脱着するための、請求項1から30の何れか一項に記載のセルロース系炭素熱分解生成物吸着剤を含有するガス貯蔵分配容器を含む、ガス供給パッケージ。
- セルロース前駆体材料及び1以上の非セルロース前駆体材料の熱分解生成物を含む、吸着剤。
- 前記1以上の非セルロース前駆体材料が、合成高分子材料、石油系材料、石油由来材料、セルロース以外の炭水化物、並びに前述の組合せ、ブレンド、及び混合物からなる群から選択される、請求項39に記載の吸着剤。
- 前記1以上の非セルロース前駆体材料が、ポリ塩化ビニリデンポリマー及び共重合体、並びにポリフッ化ビニリデンポリマー及び共重合体からなる群から選択される、請求項40に記載の吸着剤。
- 前記1以上の非セルロース前駆体材料が、デンプン及びマルトデキストリンからなる群から選択される、請求項40に記載の吸着剤。
- 前記セルロース前駆体材料が、微結晶性セルロースを含む、請求項39に記載の吸着剤。
- 2以上の異なるセルロース材料を含むセルロース前駆体材料の熱分解生成物を含む、請求項39に記載の吸着剤。
- セルロース前駆体材料の濃度が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて少なくとも50重量%である、請求項39に記載の吸着剤。
- 化学的及び/又は物理的活性化によって活性化される熱分解生成物を含む、請求項39に記載の吸着剤。
- 前記熱分解生成物が、600℃から1200℃の範囲の温度の、不活性ガスと混合しているか又は純粋なガス流れとしてのCO2、空気、又は蒸気に曝露させる際のバーンオフによって活性化された、請求項46に記載の吸着剤。
- 請求項39に記載の吸着剤であって、
(i)微結晶性セルロース熱分解生成物と;
(ii)(a)デンプン及び(b)マルトデキストリンのうちの少なくとも一つの熱分解生成物と
を含む、吸着剤。 - 微結晶性セルロース熱分解生成物とデンプンの熱分解生成物を含む、請求項48に記載の吸着剤。
- 微結晶性セルロース熱分解生成物とマルトデキストリンの熱分解生成物を含む、請求項48に記載の吸着剤。
- 微結晶性セルロース熱分解生成物、デンプン熱分解生成物、及びマルトデキストリンの熱分解生成物を含む、請求項48に記載の吸着剤。
- ガス供給パッケージにおいて、ガスをその上に吸着貯蔵し、前記ガス供給パッケージの分配条件下でガスをそれから脱着するための請求項39から51の何れか一項に記載の吸着剤を保持する容器を含む、ガス供給パッケージ。
- ガス濾過装置及び/又は精製装置において、濾過及び/又は精製のためにその中をガスが流れるハウジングを含むガス濾過及び/又は精製装置であって、前記ハウジングが、前記ガスとの接触のための請求項39から51の何れか一項に記載の吸着剤を保持する、ガス濾過装置及び/又は精製装置。
- 請求項53に記載のガス濾過装置。
- 請求項53に記載のガス精製装置。
- ガスをパッケージングする方法であって、前記ガスを請求項39から51の何れか一項に記載の吸着剤に吸着させることを含み、前記吸着剤がガス貯蔵分配容器にパッケージ化されている、方法。
- ガスを濾過及び/又は精製する方法において、前記ガスを、前記ガスの1以上の成分に吸着親和性を有する請求項39から51の何れか一項に記載の吸着剤と接触させることを含む、方法。
- 前記セルロース前駆体材料が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて、5から98重量%の濃度で存在する、請求項39に記載の吸着剤。
- 前記セルロース前駆体材料が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて、少なくとも50重量%の濃度で存在する、請求項39に記載の吸着剤。
- 前記セルロース前駆体材料が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて、55から98重量%の濃度で存在する、請求項39に記載の吸着剤。
- 前記セルロース前駆体材料が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて、60から80重量%の濃度で存在する、請求項39に記載の吸着剤。
- 前記セルロース前駆体材料が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて、65から95重量%の濃度で存在する、請求項39に記載の吸着剤。
- 前記セルロース前駆体材料が、前記セルロース前駆体材料及び非セルロース前駆体材料の総重量に基づいて、70から90重量%の濃度で存在する、請求項39に記載の吸着剤。
- 前記ガスが、その少なくとも一つの同位元素の天然存在度レベルを上回って同位体が濃縮された同位体が濃縮された変異体を含み、前記天然存在度レベルを上回る前記同位体が濃縮されたレベルが、前記同位体が濃縮された元素の前記ガス中の天然存在度レベルと100%同位体濃度の差の5%から100%の範囲内である、請求項6に記載のセルロース系炭素熱分解生成物。
- 前記ガスが、同位体が濃縮されたホウ素含有ガスを含む、請求項6に記載のセルロース系炭素熱分解生成物。
- 前記ガスが、同位体が濃縮されたケイ素含有ガスを含む、請求項6に記載のセルロース系炭素熱分解生成物。
- 前記ガスが、同位体が濃縮されたゲルマニウム含有ガスを含む、請求項6に記載のセルロース系炭素熱分解生成物。
- バーンオフガスが、不活性ガスと混合しているCO2を含む、請求項47に記載の吸着剤。
- CO2が、前記バーンオフガスの全体積に基づいて30%から98体積%の範囲の濃度で前記バーンオフガスに存在している、請求項68に記載の吸着剤。
- バーンオフガスが、不活性ガスと混合している空気を含む、請求項47に記載の吸着剤。
- 空気が、前記バーンオフガスの全体積に基づいて30%から98体積%の範囲の濃度で前記バーンオフガスに存在している、請求項70に記載の吸着剤。
- バーンオフガスが、不活性ガスと混合している蒸気を含む、請求項47に記載の吸着剤。
- 空気が、前記バーンオフガスの全体積に基づいて30%から98体積%の範囲の濃度で前記バーンオフガスに存在している、請求項72に記載の吸着剤。
- 前記ガスが、前述の2以上の混合物を含み、ガス混合物の各成分ガスの濃度が2から98体積%の範囲の濃度で存在し、前記ガス混合物の全ての成分ガスの体積百分率が合計して100体積パーセントになる、請求項4に記載のセルロース系炭素熱分解生成物。
- 前記半導体製造ガスが、前述の2以上のガス混合物、又は共流ガス、キャリアガス、及び希釈剤の1以上と組み合わせた前述の1以上を含むガス混合物を含み、前記ガス混合物の各成分ガスの濃度が2から98体積%の範囲内であり、前記ガス混合物の全ての成分ガスの体積百分率が合計して100体積パーセントになる、請求項12に記載のセルロース系炭素熱分解生成物。
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TW201726246A (zh) | 2017-08-01 |
CN108136365A (zh) | 2018-06-08 |
KR20180032664A (ko) | 2018-03-30 |
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