JP2018525776A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2018525776A5 JP2018525776A5 JP2017567693A JP2017567693A JP2018525776A5 JP 2018525776 A5 JP2018525776 A5 JP 2018525776A5 JP 2017567693 A JP2017567693 A JP 2017567693A JP 2017567693 A JP2017567693 A JP 2017567693A JP 2018525776 A5 JP2018525776 A5 JP 2018525776A5
- Authority
- JP
- Japan
- Prior art keywords
- perovskite
- metal
- oxide
- insulating
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 32
- 150000001768 cations Chemical group 0.000 claims 14
- 239000010408 film Substances 0.000 claims 14
- -1 preferably Chemical compound 0.000 claims 13
- 239000002243 precursor Substances 0.000 claims 12
- 239000011159 matrix material Substances 0.000 claims 11
- 150000004767 nitrides Chemical class 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 10
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 229910001507 metal halide Inorganic materials 0.000 claims 6
- 229910000000 metal hydroxide Inorganic materials 0.000 claims 5
- 150000004692 metal hydroxides Chemical class 0.000 claims 5
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000002159 nanocrystal Substances 0.000 claims 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 238000005424 photoluminescence Methods 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims 3
- 125000003118 aryl group Chemical group 0.000 claims 3
- 238000000231 atomic layer deposition Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000005538 encapsulation Methods 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims 2
- 239000003446 ligand Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 2
- 239000002096 quantum dot Substances 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical group [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 150000001450 anions Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 150000001805 chlorine compounds Chemical group 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 239000002070 nanowire Substances 0.000 claims 1
- 229910000480 nickel oxide Inorganic materials 0.000 claims 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052701 rubidium Inorganic materials 0.000 claims 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 238000005979 thermal decomposition reaction Methods 0.000 claims 1
- 238000007736 thin film deposition technique Methods 0.000 claims 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical group Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1511490.3A GB201511490D0 (en) | 2015-06-30 | 2015-06-30 | Photoluminescent device |
| GB1511490.3 | 2015-06-30 | ||
| GB1519269.3 | 2015-10-30 | ||
| GBGB1519269.3A GB201519269D0 (en) | 2015-10-30 | 2015-10-30 | Luminescent device |
| PCT/EP2016/065262 WO2017001542A1 (en) | 2015-06-30 | 2016-06-30 | Luminescent device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018525776A JP2018525776A (ja) | 2018-09-06 |
| JP2018525776A5 true JP2018525776A5 (enExample) | 2019-07-25 |
| JP6952610B2 JP6952610B2 (ja) | 2021-10-20 |
Family
ID=56292734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017567693A Active JP6952610B2 (ja) | 2015-06-30 | 2016-06-30 | ルミネセントデバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10908318B2 (enExample) |
| EP (1) | EP3317905A1 (enExample) |
| JP (1) | JP6952610B2 (enExample) |
| KR (1) | KR102640912B1 (enExample) |
| CN (2) | CN107949925A (enExample) |
| WO (1) | WO2017001542A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10276807B2 (en) | 2014-11-06 | 2019-04-30 | Postech Academy-Industry Foundation | Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same |
| WO2016072810A1 (ko) | 2014-11-06 | 2016-05-12 | 포항공과대학교 산학협력단 | 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법 |
| KR101643052B1 (ko) | 2014-11-06 | 2016-07-27 | 포항공과대학교 산학협력단 | 파장변환입자, 파장변환입자의 제조방법, 및 파장변환입자를 포함하는 발광 소자 |
| WO2016072806A2 (ko) | 2014-11-06 | 2016-05-12 | 포항공과대학교 산학협력단 | 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자 |
| CN106125398A (zh) * | 2016-07-25 | 2016-11-16 | 广东普加福光电科技有限公司 | 一种新型量子点液晶背光源 |
| JP6837995B2 (ja) * | 2016-11-14 | 2021-03-03 | 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． | 量子ドット発光ダイオードおよびその製造方法、並びに表示パネルおよび表示装置 |
| EP3339394B1 (en) * | 2016-12-22 | 2018-12-12 | Avantama AG | Luminescent composite materials |
| US10345688B2 (en) * | 2017-04-18 | 2019-07-09 | Unique Materials Co., Ltd. | Light emitting apparatus using composite material |
| WO2019046525A1 (en) * | 2017-08-30 | 2019-03-07 | Florida State University Research Foundation, Inc. | TUNABLE PROHIBITED BANDAGE PERVSKITE MATERIALS AND METHODS OF MAKING SAME |
| CN111418080A (zh) * | 2017-10-19 | 2020-07-14 | 多伦多大学管理委员会 | 准二维层状钙钛矿材料、相关器件及其制造方法 |
| US10741730B2 (en) | 2017-11-10 | 2020-08-11 | Cree, Inc. | Stabilized luminescent nanoparticles comprising a perovskite semiconductor and method of fabrication |
| GB201719878D0 (en) * | 2017-11-29 | 2018-01-10 | Cambridge Entpr Ltd | Passivating potassium halide in perovskite optolectronic devices |
| TWI773726B (zh) * | 2018-01-18 | 2022-08-11 | 達興材料股份有限公司 | 螢光物質及其製法 |
| SG10201803272YA (en) * | 2018-04-19 | 2019-11-28 | Nat Univ Singapore | Perovskite-based nanocrystal scintillators |
| EP3785020A4 (en) * | 2018-04-27 | 2022-01-19 | University of Washington | METAL HALIDE SEMICONDUCTOR OPTICAL AND ELECTRONIC DEVICES AND PROCESSES FOR THEIR MANUFACTURE |
| GB201811538D0 (en) | 2018-07-13 | 2018-08-29 | Univ Oxford Innovation Ltd | Stabilised a/m/x materials |
| JP7178215B2 (ja) * | 2018-08-30 | 2022-11-25 | エルジー ディスプレイ カンパニー リミテッド | 無機発光素子 |
| WO2020085174A1 (ja) * | 2018-10-23 | 2020-04-30 | 国立大学法人北海道大学 | ペロブスカイトナノ結晶薄膜、ペロブスカイトナノ結晶薄膜の製造方法、発光素子、光電変換素子、表示装置および電子機器 |
| JP2020066705A (ja) * | 2018-10-26 | 2020-04-30 | 株式会社小糸製作所 | 発光物および発光物製造方法 |
| TW202104544A (zh) * | 2019-05-21 | 2021-02-01 | 日商Ｄｉｃ股份有限公司 | 發光粒子之製造方法、發光粒子、發光粒子分散體、油墨組成物及發光元件 |
| CN110534631B (zh) * | 2019-09-05 | 2021-01-15 | 大连海事大学 | 一种led结合钙钛矿量子点微晶玻璃的显示用宽色域背光源 |
| GB201913835D0 (en) | 2019-09-25 | 2019-11-06 | Cambridge Entpr Ltd | Perovskite Semiconductor Devices |
| KR102374246B1 (ko) * | 2020-07-14 | 2022-03-14 | 명지대학교 산학협력단 | 원자층증착법 전구체를 이용한 양자점 패터닝 방법 및 이를 이용하여 제조된 디스플레이 장치 |
| CN112391163B (zh) * | 2020-09-30 | 2022-11-18 | 上海大学 | 氮掺杂的黄色碳量子点及其制备方法 |
| CN113155843A (zh) * | 2021-03-15 | 2021-07-23 | 浙江大学 | 缺陷检测装置、方法及发光信号的获得方法 |
| CN113105885B (zh) * | 2021-04-15 | 2023-06-23 | 河北工业大学 | 一种钙钛矿/氧化锌异质结构发光材料及其制备方法 |
| CN113480996B (zh) * | 2021-08-13 | 2023-01-13 | 河北工业大学 | 晶态氢氧化物包覆钙钛矿纳米晶及其制备方法、应用 |
| CN117625018B (zh) * | 2022-08-10 | 2025-12-02 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 一种辐射固化量子点粉末涂料及其制备方法、应用 |
| CN115466615A (zh) * | 2022-09-29 | 2022-12-13 | 五邑大学 | 一种基于钙钛矿量子点的发光薄膜及其制备方法与应用 |
| WO2024084613A1 (ja) * | 2022-10-19 | 2024-04-25 | シャープディスプレイテクノロジー株式会社 | 発光素子の製造方法、発光素子、及び表示装置 |
| US20260215074A1 (en) * | 2022-12-06 | 2026-07-23 | Sharp Display Technology Corporation | Quantum dot solution, light-emitting element, display device, and method for forming light-emitting layer |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2815469B1 (fr) * | 2000-10-13 | 2003-03-21 | St Microelectronics Sa | Procede de fabrication d'une structure monolithique comportant un condensateur a dielectrique perovskite |
| CN100584921C (zh) | 2002-09-05 | 2010-01-27 | 奈米系统股份有限公司 | 促进电荷转移至纳米结构或自纳米结构转移出电荷的有机物 |
| US7834319B2 (en) | 2005-12-21 | 2010-11-16 | Los Alamos National Security, Llc | Nanophosphor composite scintillators comprising a polymer matrix |
| JP2009530488A (ja) | 2006-03-21 | 2009-08-27 | ウルトラドッツ・インコーポレイテッド | 可視域又は近赤外域の光を放出する発光材料 |
| JP2008227330A (ja) | 2007-03-15 | 2008-09-25 | Canon Inc | 発光素子 |
| WO2009104595A1 (ja) * | 2008-02-19 | 2009-08-27 | 独立行政法人産業技術総合研究所 | 酸化物ぺロブスカイト薄膜el素子 |
| US8456082B2 (en) | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
| US8981305B2 (en) * | 2011-05-12 | 2015-03-17 | University Of Florida Research Foundation, Inc. | Index of refraction matched nanoparticles and methods of use |
| GB201208793D0 (en) | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
| US10069025B2 (en) | 2012-09-18 | 2018-09-04 | Oxford University Innovation Limited | Optoelectronic device |
| JP6103183B2 (ja) | 2012-10-10 | 2017-03-29 | ペクセル・テクノロジーズ株式会社 | ペロブスカイト化合物を用いた電界発光素子 |
| JP6099036B2 (ja) * | 2012-10-17 | 2017-03-22 | ペクセル・テクノロジーズ株式会社 | ペロブスカイト化合物を用いた有機ｅｌ素子 |
| US9012900B2 (en) * | 2012-12-26 | 2015-04-21 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
| GB201407606D0 (en) | 2014-04-30 | 2014-06-11 | Cambridge Entpr Ltd | Electroluminescent device |
| GB201410542D0 (en) * | 2014-06-12 | 2014-07-30 | Isis Innovation | Heterojunction device |
| CN104183697B (zh) * | 2014-08-25 | 2017-01-11 | 常州大学 | 一种钙钛矿结构的太阳能电池及其制备方法 |
| GB201421133D0 (en) * | 2014-11-28 | 2015-01-14 | Cambridge Entpr Ltd | Electroluminescent device |
| JP2017112186A (ja) | 2015-12-15 | 2017-06-22 | 三菱化学株式会社 | 半導体デバイス及びその製造方法、太陽電池、並びに半導体層形成用組成物 |
| WO2017160955A1 (en) | 2016-03-15 | 2017-09-21 | Nutech Ventures | Insulating tunneling contact for efficient and stable perovskite solar cells |
-
2016
- 2016-06-30 KR KR1020187002859A patent/KR102640912B1/ko active Active
- 2016-06-30 EP EP16733555.3A patent/EP3317905A1/en active Pending
- 2016-06-30 WO PCT/EP2016/065262 patent/WO2017001542A1/en not_active Ceased
- 2016-06-30 CN CN201680049989.2A patent/CN107949925A/zh active Pending
- 2016-06-30 CN CN202210477793.0A patent/CN115188903A/zh active Pending
- 2016-06-30 US US15/740,509 patent/US10908318B2/en active Active
- 2016-06-30 JP JP2017567693A patent/JP6952610B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jiang et al. | Highly luminescent and water-resistant CsPbBr3–CsPb2Br5 perovskite nanocrystals coordinated with partially hydrolyzed poly (methyl methacrylate) and polyethylenimine | |
| Wei et al. | An overview on enhancing the stability of lead halide perovskite quantum dots and their applications in phosphor-converted LEDs | |
| EP3406752B1 (en) | Method for preparing an electronic device | |
| JP6952610B2 (ja) | ルミネセントデバイス | |
| JP2012504867A5 (enExample) | ||
| JP2019524612A5 (ja) | 窒化ホウ素ナノ材料の製造方法 | |
| Jing et al. | Nanoscale encapsulation of perovskite nanocrystal luminescent films via plasma-enhanced SiO2 atomic layer deposition | |
| JP2017171934A5 (enExample) | ||
| JP2019085575A5 (enExample) | ||
| WO2017144401A1 (en) | Luminescent particles | |
| JP2020507801A (ja) | ポリマーと絶縁体コーティングとを有する半導体構造物、ならびにそれを形成するための組成物及び方法 | |
| CN105745353A (zh) | 有机/无机杂化薄膜及其制备方法 | |
| JP2022511773A5 (enExample) | ||
| Panzer et al. | Versatile tri (pyrazolyl) phosphanes as phosphorus precursors for the synthesis of highly emitting InP/ZnS quantum dots | |
| Zhang et al. | In situ gas/solid reaction for the formation of luminescent quantum confined CH3NH3PbBr3 perovskite planar film | |
| JP2013514290A (ja) | インジウムクロロジアルコキシドの製造方法 | |
| CN107921473A (zh) | 用于led照明和显示装置的经绝缘体涂覆的量子点 | |
| JP2007517381A5 (enExample) | ||
| Wang et al. | Organic polystyrene and inorganic silica double shell protected lead halide perovskite nanocrystals with high emission efficiency and superior stability | |
| JP6772280B2 (ja) | 保護層を有する発光粒子を製造するための方法、および保護層を有する発光粒子 | |
| CN106784406B (zh) | 一种oled器件的制备方法 | |
| JP6270183B2 (ja) | 有機無機層状ペロブスカイト型化合物及び有機無機層状ペロブスカイト型化合物の製造方法 | |
| JP2016515990A5 (enExample) | ||
| JPWO2023022093A5 (enExample) | ||
| WO2008111850A2 (en) | Synthesis of molecular metalorganic compounds |