JP6952610B2 - ルミネセントデバイス - Google Patents

ルミネセントデバイス Download PDF

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Publication number
JP6952610B2
JP6952610B2 JP2017567693A JP2017567693A JP6952610B2 JP 6952610 B2 JP6952610 B2 JP 6952610B2 JP 2017567693 A JP2017567693 A JP 2017567693A JP 2017567693 A JP2017567693 A JP 2017567693A JP 6952610 B2 JP6952610 B2 JP 6952610B2
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perovskite
metal
insulating
oxide
crystals
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JP2018525776A5 (enExample
JP2018525776A (ja
Inventor
リチャード・ヘンリー・フレンド
グワンル・リ
ダウェイ・ディ
レザ・サベリ・モハダム
ジ・クアン・タン
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Cambridge Enterprise Ltd
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Cambridge Enterprise Ltd
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Priority claimed from GBGB1511490.3A external-priority patent/GB201511490D0/en
Priority claimed from GBGB1519269.3A external-priority patent/GB201519269D0/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/06—Luminescent materials, e.g. electroluminescent or chemiluminescent containing organic luminescent materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/206—Filters comprising particles embedded in a solid matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1003—Carbocyclic compounds
    • C09K2211/1014—Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
JP2017567693A 2015-06-30 2016-06-30 ルミネセントデバイス Active JP6952610B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GBGB1511490.3A GB201511490D0 (en) 2015-06-30 2015-06-30 Photoluminescent device
GB1511490.3 2015-06-30
GB1519269.3 2015-10-30
GBGB1519269.3A GB201519269D0 (en) 2015-10-30 2015-10-30 Luminescent device
PCT/EP2016/065262 WO2017001542A1 (en) 2015-06-30 2016-06-30 Luminescent device

Publications (3)

Publication Number Publication Date
JP2018525776A JP2018525776A (ja) 2018-09-06
JP2018525776A5 JP2018525776A5 (enExample) 2019-07-25
JP6952610B2 true JP6952610B2 (ja) 2021-10-20

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Country Status (6)

Country Link
US (1) US10908318B2 (enExample)
EP (1) EP3317905A1 (enExample)
JP (1) JP6952610B2 (enExample)
KR (1) KR102640912B1 (enExample)
CN (2) CN107949925A (enExample)
WO (1) WO2017001542A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10276807B2 (en) 2014-11-06 2019-04-30 Postech Academy-Industry Foundation Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same
WO2016072810A1 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법
KR101643052B1 (ko) 2014-11-06 2016-07-27 포항공과대학교 산학협력단 파장변환입자, 파장변환입자의 제조방법, 및 파장변환입자를 포함하는 발광 소자
WO2016072806A2 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자
CN106125398A (zh) * 2016-07-25 2016-11-16 广东普加福光电科技有限公司 一种新型量子点液晶背光源
JP6837995B2 (ja) * 2016-11-14 2021-03-03 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. 量子ドット発光ダイオードおよびその製造方法、並びに表示パネルおよび表示装置
EP3339394B1 (en) * 2016-12-22 2018-12-12 Avantama AG Luminescent composite materials
US10345688B2 (en) * 2017-04-18 2019-07-09 Unique Materials Co., Ltd. Light emitting apparatus using composite material
WO2019046525A1 (en) * 2017-08-30 2019-03-07 Florida State University Research Foundation, Inc. TUNABLE PROHIBITED BANDAGE PERVSKITE MATERIALS AND METHODS OF MAKING SAME
CN111418080A (zh) * 2017-10-19 2020-07-14 多伦多大学管理委员会 准二维层状钙钛矿材料、相关器件及其制造方法
US10741730B2 (en) 2017-11-10 2020-08-11 Cree, Inc. Stabilized luminescent nanoparticles comprising a perovskite semiconductor and method of fabrication
GB201719878D0 (en) * 2017-11-29 2018-01-10 Cambridge Entpr Ltd Passivating potassium halide in perovskite optolectronic devices
TWI773726B (zh) * 2018-01-18 2022-08-11 達興材料股份有限公司 螢光物質及其製法
SG10201803272YA (en) * 2018-04-19 2019-11-28 Nat Univ Singapore Perovskite-based nanocrystal scintillators
EP3785020A4 (en) * 2018-04-27 2022-01-19 University of Washington METAL HALIDE SEMICONDUCTOR OPTICAL AND ELECTRONIC DEVICES AND PROCESSES FOR THEIR MANUFACTURE
GB201811538D0 (en) 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Stabilised a/m/x materials
JP7178215B2 (ja) * 2018-08-30 2022-11-25 エルジー ディスプレイ カンパニー リミテッド 無機発光素子
WO2020085174A1 (ja) * 2018-10-23 2020-04-30 国立大学法人北海道大学 ペロブスカイトナノ結晶薄膜、ペロブスカイトナノ結晶薄膜の製造方法、発光素子、光電変換素子、表示装置および電子機器
JP2020066705A (ja) * 2018-10-26 2020-04-30 株式会社小糸製作所 発光物および発光物製造方法
TW202104544A (zh) * 2019-05-21 2021-02-01 日商Dic股份有限公司 發光粒子之製造方法、發光粒子、發光粒子分散體、油墨組成物及發光元件
CN110534631B (zh) * 2019-09-05 2021-01-15 大连海事大学 一种led结合钙钛矿量子点微晶玻璃的显示用宽色域背光源
GB201913835D0 (en) 2019-09-25 2019-11-06 Cambridge Entpr Ltd Perovskite Semiconductor Devices
KR102374246B1 (ko) * 2020-07-14 2022-03-14 명지대학교 산학협력단 원자층증착법 전구체를 이용한 양자점 패터닝 방법 및 이를 이용하여 제조된 디스플레이 장치
CN112391163B (zh) * 2020-09-30 2022-11-18 上海大学 氮掺杂的黄色碳量子点及其制备方法
CN113155843A (zh) * 2021-03-15 2021-07-23 浙江大学 缺陷检测装置、方法及发光信号的获得方法
CN113105885B (zh) * 2021-04-15 2023-06-23 河北工业大学 一种钙钛矿/氧化锌异质结构发光材料及其制备方法
CN113480996B (zh) * 2021-08-13 2023-01-13 河北工业大学 晶态氢氧化物包覆钙钛矿纳米晶及其制备方法、应用
CN117625018B (zh) * 2022-08-10 2025-12-02 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种辐射固化量子点粉末涂料及其制备方法、应用
CN115466615A (zh) * 2022-09-29 2022-12-13 五邑大学 一种基于钙钛矿量子点的发光薄膜及其制备方法与应用
WO2024084613A1 (ja) * 2022-10-19 2024-04-25 シャープディスプレイテクノロジー株式会社 発光素子の製造方法、発光素子、及び表示装置
US20260215074A1 (en) * 2022-12-06 2026-07-23 Sharp Display Technology Corporation Quantum dot solution, light-emitting element, display device, and method for forming light-emitting layer

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2815469B1 (fr) * 2000-10-13 2003-03-21 St Microelectronics Sa Procede de fabrication d'une structure monolithique comportant un condensateur a dielectrique perovskite
CN100584921C (zh) 2002-09-05 2010-01-27 奈米系统股份有限公司 促进电荷转移至纳米结构或自纳米结构转移出电荷的有机物
US7834319B2 (en) 2005-12-21 2010-11-16 Los Alamos National Security, Llc Nanophosphor composite scintillators comprising a polymer matrix
JP2009530488A (ja) 2006-03-21 2009-08-27 ウルトラドッツ・インコーポレイテッド 可視域又は近赤外域の光を放出する発光材料
JP2008227330A (ja) 2007-03-15 2008-09-25 Canon Inc 発光素子
WO2009104595A1 (ja) * 2008-02-19 2009-08-27 独立行政法人産業技術総合研究所 酸化物ぺロブスカイト薄膜el素子
US8456082B2 (en) 2008-12-01 2013-06-04 Ifire Ip Corporation Surface-emission light source with uniform illumination
US8981305B2 (en) * 2011-05-12 2015-03-17 University Of Florida Research Foundation, Inc. Index of refraction matched nanoparticles and methods of use
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
US10069025B2 (en) 2012-09-18 2018-09-04 Oxford University Innovation Limited Optoelectronic device
JP6103183B2 (ja) 2012-10-10 2017-03-29 ペクセル・テクノロジーズ株式会社 ペロブスカイト化合物を用いた電界発光素子
JP6099036B2 (ja) * 2012-10-17 2017-03-22 ペクセル・テクノロジーズ株式会社 ペロブスカイト化合物を用いた有機el素子
US9012900B2 (en) * 2012-12-26 2015-04-21 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
GB201407606D0 (en) 2014-04-30 2014-06-11 Cambridge Entpr Ltd Electroluminescent device
GB201410542D0 (en) * 2014-06-12 2014-07-30 Isis Innovation Heterojunction device
CN104183697B (zh) * 2014-08-25 2017-01-11 常州大学 一种钙钛矿结构的太阳能电池及其制备方法
GB201421133D0 (en) * 2014-11-28 2015-01-14 Cambridge Entpr Ltd Electroluminescent device
JP2017112186A (ja) 2015-12-15 2017-06-22 三菱化学株式会社 半導体デバイス及びその製造方法、太陽電池、並びに半導体層形成用組成物
WO2017160955A1 (en) 2016-03-15 2017-09-21 Nutech Ventures Insulating tunneling contact for efficient and stable perovskite solar cells

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CN115188903A (zh) 2022-10-14
US10908318B2 (en) 2021-02-02
EP3317905A1 (en) 2018-05-09
WO2017001542A1 (en) 2017-01-05
US20180196164A1 (en) 2018-07-12
KR20180023975A (ko) 2018-03-07
CN107949925A (zh) 2018-04-20
JP2018525776A (ja) 2018-09-06
KR102640912B1 (ko) 2024-02-27

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