JP2018525305A - 単分散貴金属ナノ結晶の双角錐鋳型合成 - Google Patents

単分散貴金属ナノ結晶の双角錐鋳型合成 Download PDF

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JP2018525305A
JP2018525305A JP2017564023A JP2017564023A JP2018525305A JP 2018525305 A JP2018525305 A JP 2018525305A JP 2017564023 A JP2017564023 A JP 2017564023A JP 2017564023 A JP2017564023 A JP 2017564023A JP 2018525305 A JP2018525305 A JP 2018525305A
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metal
nanocrystals
solution
nanocrystal
bipyramidal
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JP2018525305A5 (https=
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ワイツマン ヨッシ
ワイツマン ヨッシ
ギブソン カイル
ギブソン カイル
チュン−フン リ
チュン−フン リ
チェグラコフ ゾーヤ
チェグラコフ ゾーヤ
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University of Chicago
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0553—Complex form nanoparticles, e.g. prism, pyramid, octahedron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Silicon Compounds (AREA)
JP2017564023A 2015-06-08 2016-05-09 単分散貴金属ナノ結晶の双角錐鋳型合成 Pending JP2018525305A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562172481P 2015-06-08 2015-06-08
US62/172,481 2015-06-08
PCT/US2016/031522 WO2016200525A1 (en) 2015-06-08 2016-05-09 Bipyramid-templated synthesis of monodisperse noble metal nanocrystals

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JP2018525305A true JP2018525305A (ja) 2018-09-06
JP2018525305A5 JP2018525305A5 (https=) 2019-06-13

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US (2) US11045874B2 (https=)
EP (1) EP3303662B1 (https=)
JP (2) JP2018525305A (https=)
CN (1) CN107849726B (https=)
AU (1) AU2016274238B2 (https=)
CA (1) CA2988553C (https=)
HK (1) HK1253414A1 (https=)
WO (1) WO2016200525A1 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2022534044A (ja) * 2019-05-22 2022-07-27 プロメガ コーポレイション 迅速な核酸増幅において光熱ナノ粒子を使用する方法および光熱ナノ粒子

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EP3303662B1 (en) 2015-06-08 2022-03-09 The University of Chicago Bipyramid-templated synthesis of monodisperse noble metal nanocrystals
KR20190091185A (ko) * 2018-01-26 2019-08-05 서울대학교산학협력단 모서리 첨예도 지수가 조절된 금속 나노큐브의 제조방법
CN108356278A (zh) * 2018-03-01 2018-08-03 东南大学 一种表面等离激元纳米钉结构的规模化可控制备方法
CN109128210A (zh) * 2018-08-02 2019-01-04 黄河科技学院 一种哑铃状金纳米双锥/银纳米复合材料及其制备方法
CN110193608B (zh) * 2019-06-06 2022-03-11 中国科学院合肥物质科学研究院 一种基于微刻蚀的从金纳米哑铃到金纳米颗粒的调控方法
CN113275555B (zh) * 2021-04-13 2022-04-19 南京航空航天大学 一种阵列结构的金属纳米框及其制备方法与应用
CN113369492B (zh) * 2021-06-09 2022-09-13 合肥工业大学 一种五重孪晶铂纳米棒及其制备方法
CN113984685B (zh) * 2021-09-30 2023-03-10 南京航空航天大学 一种银纳米结构生长机理的分析方法
WO2023123134A1 (zh) 2021-12-29 2023-07-06 长庚大学 核酸扩增方法及其装置暨核酸检测方法与其装置
CN114309592B (zh) * 2021-12-30 2025-01-10 杭州电子科技大学 一种在金纳米棒两端包覆二氧化硅的方法
CN115901630B (zh) * 2023-01-05 2023-06-06 武汉理工大学 一种氢敏反射膜片、制备方法及氢气浓度检测装置
CN116559120A (zh) * 2023-04-19 2023-08-08 大连海事大学 一种基于金双锥体纳米粒子的高灵敏度近红外lspr光纤生化传感器
CN117300118B (zh) * 2023-09-27 2026-03-31 浙江理工大学嵊州创新研究院有限公司 一种多组分复合异构纳米材料及其制备方法及应用

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AU2016274238B2 (en) 2020-04-30
JP2021052786A (ja) 2021-04-08
JP7142958B2 (ja) 2022-09-28
US11872635B2 (en) 2024-01-16
WO2016200525A1 (en) 2016-12-15
EP3303662A4 (en) 2018-12-05
EP3303662B1 (en) 2022-03-09
HK1253414A1 (zh) 2019-06-14
AU2016274238A1 (en) 2018-02-01
CN107849726A (zh) 2018-03-27
EP3303662A1 (en) 2018-04-11
CA2988553A1 (en) 2016-12-15
US20180297120A1 (en) 2018-10-18
CN107849726B (zh) 2021-07-13
US11045874B2 (en) 2021-06-29
US20210276095A1 (en) 2021-09-09
CA2988553C (en) 2022-02-15

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