JP2018522405A - オプトエレクトロニクス半導体装置を製造する方法およびオプトエレクトロニクス半導体装置 - Google Patents
オプトエレクトロニクス半導体装置を製造する方法およびオプトエレクトロニクス半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 214
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 66
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 26
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052738 indium Inorganic materials 0.000 claims abstract description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000031700 light absorption Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 344
- 150000004767 nitrides Chemical class 0.000 claims description 70
- 230000003647 oxidation Effects 0.000 claims description 43
- 238000007254 oxidation reaction Methods 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 229910003437 indium oxide Inorganic materials 0.000 claims description 11
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 11
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 10
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
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- 229910052697 platinum Inorganic materials 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- 230000000630 rising effect Effects 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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Abstract
Description
1a 上面
1a’ さらなる上面
11 第1の半導体層
12 活性領域
13 第2の半導体層
14 高ドープ半導体層
2 積層体
2a 中間面
20 酸化物層
21 第1の中間層
22 第2の中間層
200 島
201 窒化物層
202 窒化物中間層
3 コンタクト層
3’ さらなるコンタクト層
3a 放射通過面
31 代替境界領域
32 第1の境界領域
33 第2の境界領域
4 コンタクト部
51 酸素含有ガス
71 酸化前のスペクトル
72 酸化後のスペクトル
73 比較スペクトル
701 第1の極大
702 第2の極大
703 第3の極大
81 酸化物含有量
82 錫含有量
I XRD強度
θ XRD角
S 正規化EDX信号
z 積層方向
Claims (20)
- 半導体積層体(1)を設ける工程であって、前記半導体積層体(1)は、発光および/または吸光活性領域(12)と、前記半導体積層体(1)の延在主面に対して垂直に延びる積層方向(z)における前記活性領域(12)の下流に上面(1a)とを有する工程と、
前記上面(1a)に積層体(2)を載置する工程であって、前記積層体(2)はインジウムを含有する酸化物層(20)と、前記積層方向(z)における前記上面(1a)の下流に中間面(2a)とを有する工程と、
酸化インジウムスズで形成されるコンタクト層(3)を前記中間面(2a)に設ける工程とを含み、
前記積層体(2)は製造上の許容範囲内で錫を含有しない、オプトエレクトロニクス半導体装置を製造する方法。 - 前記酸化物層(20)の載置は、
インジウムを含有する窒化物層(201)を、特にエピタキシャルに堆積して設ける工程と、
酸化工程において少なくとも部分的に前記窒化物層(201)を酸化して前記酸化物層(20)を生じる工程とを含む、請求項1に記載の方法。 - 前記酸化工程は、前記コンタクト層(3)の載置後に行われる、請求項2に記載の方法。
- 少なくとも前記酸化工程は反応室で行われ、
前記酸化工程時に前記反応室での反応温度は460°C以上720°C以下である、請求項1から3の一項に記載の方法。 - 前記酸化物層(20)は酸化インジウムのエピタキシャル堆積によって載置される、請求項1から4の一項に記載の方法。
- 前記窒化物層(201)は、前記窒化物層(201)が互いにつながっていない多数の多層の島(200)を有するように、三次元成長条件下でエピタキシャルに堆積される、請求項1から5の一項に記載の方法。
- 前記酸化物層(20)が連なるように、エピタキシャル堆積が二次元成長条件下で進行する、請求項1から6の一項に記載の方法。
- 前記積層体(2)は、酸化インジウムガリウムで形成される第1の中間層(21)を含み、前記第1の中間層の載置は、
窒化インジウムガリウムで形成される窒化物中間層をエピタキシャルに堆積する工程と、
前記酸化工程において前記窒化物中間層を少なくとも部分的に酸化して前記第1の中間層(21)を生じる工程とを含む、請求項1から7の一項に記載の方法。 - 前記上面(1a)に直接載置する場合に前記コンタクト層(3)の結晶構造として(100)配向が得られるような成長条件下で前記コンタクト層(3)は前記中間面(2a)に載置され、前記コンタクト層(3)の結晶構造は(111)配向である、請求項1から8の一項に記載の方法。
- 半導体積層体(1)であって、発光および/または吸光活性領域(12)と、前記半導体積層体(1)の延在主面に対して垂直に延びる積層方向(z)における前記活性領域(12)の下流に上面(1a)とを有する半導体積層体(1)と、
前記上面(1a)に載置されている積層体(2)であって、インジウムを含有する酸化物層(20)と、前記積層方向(z)における前記上面(1a)の下流に中間面(2a)とを有する積層体(2)と、
酸化インジウムスズで形成されており、前記中間面(2a)に載置されているコンタクト層(3)とを備え、
前記積層体(2)は製造上の許容範囲内で錫を含有しない、オプトエレクトロニクス半導体装置。 - 前記酸化物層(20)は製造上の許容範囲内でガリウムを含有しない、請求項10に記載のオプトエレクトロニクス半導体装置。
- 前記積層体(2)は、さらに酸化インジウムガリウムで形成された第1の中間層(21)を含み、前記第1の中間層(21)は前記半導体積層体(1)と前記酸化物層(20)との間に配置されており、かつ前記酸化物層(20)に直接隣接している、請求項10または11に記載のオプトエレクトロニクス半導体装置。
- 前記積層体(2)は、さらに窒化インジウムガリウムで形成された第2の中間層(22)を含み、
前記第2の中間層(22)は、前記半導体積層体(1)と前記第1の中間層(21)との間に配置されており、かつ前記上面(1a)に直接隣接しており、
前記第2の中間層(22)は、製造上の許容範囲内で酸素を含有しない、請求項10から12の一項に記載のオプトエレクトロニクス半導体装置。 - 前記積層体(2)は窒化インジウムを含有する、請求項10から13の一項に記載のオプトエレクトロニクス半導体装置。
- 前記コンタクト層(3)の結晶構造が(111)配向である、請求項10から14の一項に記載のオプトエレクトロニクス半導体装置。
- 前記酸化物層(20)は、互いにつながっていない多数の多層の島(200)を有する、請求項10から15の一項に記載のオプトエレクトロニクス半導体装置。
- 前記酸化物層(20)は連なっている、請求項10から16の一項に記載のオプトエレクトロニクス半導体装置。
- 前記積層方向(z)に沿った前記酸化物層(20)の平均厚さは0.5以上3以下の単分子膜分である、請求項10から17の一項に記載のオプトエレクトロニクス半導体装置。
- 前記積層方向(z)に沿った前記島(200)の平均高さは50以上200以下の単分子膜分である、請求項10から18の一項に記載のオプトエレクトロニクス半導体装置。
- 前記半導体積層体(1)と前記積層体(2)との間の第1の境界領域(32)および/または前記積層体(2)と前記コンタクト層(3)との間の第2の境界領域(33)は、コンタクト層(3)が半導体積層体(1)に直接載置されている代替の半導体装置の半導体積層体(1)とコンタクト層(3)との間の代替境界領域(31)よりも欠陥密度が低い、請求項10から19の一項に記載のオプトエレクトロニクス半導体装置。
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PCT/EP2016/063891 WO2016202924A1 (de) | 2015-06-18 | 2016-06-16 | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements sowie optoelektronisches halbleiterbauelement |
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US20100052009A1 (en) * | 2008-09-01 | 2010-03-04 | Shim Sang Kyun | Light emitting device and method of manufacturing the same |
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US7645709B2 (en) * | 2007-07-30 | 2010-01-12 | Applied Materials, Inc. | Methods for low temperature oxidation of a semiconductor device |
KR101449030B1 (ko) * | 2008-04-05 | 2014-10-08 | 엘지이노텍 주식회사 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
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US8766293B2 (en) * | 2011-08-08 | 2014-07-01 | Genesis Photonics Inc. | Light-emitting device and method for manufacturing the same |
US20140124817A1 (en) * | 2012-11-05 | 2014-05-08 | Intermolecular, Inc. | Contact Layers |
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JP2001089846A (ja) * | 1999-07-16 | 2001-04-03 | Hoya Corp | 低抵抗ito薄膜及びその製造方法 |
JP2008506272A (ja) * | 2004-07-12 | 2008-02-28 | グァンジュ インスティチュート オブ サイエンス アンド テクノロジー | フリップチップ型窒化物系発光素子及びその製造方法 |
JP2007053383A (ja) * | 2005-08-19 | 2007-03-01 | Samsung Electronics Co Ltd | 上面発光型の発光素子およびその製造方法 |
JP2009054889A (ja) * | 2007-08-28 | 2009-03-12 | Yamaguchi Univ | Ito電極及びその作製方法、並びに窒化物半導体発光素子 |
US20100052009A1 (en) * | 2008-09-01 | 2010-03-04 | Shim Sang Kyun | Light emitting device and method of manufacturing the same |
JP2013115341A (ja) * | 2011-11-30 | 2013-06-10 | Stanley Electric Co Ltd | 半導体素子 |
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TW201705536A (zh) | 2017-02-01 |
KR102508721B1 (ko) | 2023-03-09 |
CN107810564B (zh) | 2020-03-06 |
DE112016002725A5 (de) | 2018-03-08 |
DE102015109786A1 (de) | 2016-12-22 |
CN107810564A (zh) | 2018-03-16 |
JP6731956B2 (ja) | 2020-07-29 |
TWI617054B (zh) | 2018-03-01 |
US20180190874A1 (en) | 2018-07-05 |
US10566501B2 (en) | 2020-02-18 |
WO2016202924A1 (de) | 2016-12-22 |
KR20180019661A (ko) | 2018-02-26 |
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