JP2018521504A5 - - Google Patents

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Publication number
JP2018521504A5
JP2018521504A5 JP2017564018A JP2017564018A JP2018521504A5 JP 2018521504 A5 JP2018521504 A5 JP 2018521504A5 JP 2017564018 A JP2017564018 A JP 2017564018A JP 2017564018 A JP2017564018 A JP 2017564018A JP 2018521504 A5 JP2018521504 A5 JP 2018521504A5
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JP
Japan
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nfet
pfet
gate
source
drain
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JP2017564018A
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English (en)
Japanese (ja)
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JP6437674B2 (ja
JP2018521504A (ja
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Priority claimed from US14/736,882 external-priority patent/US9438225B1/en
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Publication of JP2018521504A5 publication Critical patent/JP2018521504A5/ja
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Publication of JP6437674B2 publication Critical patent/JP6437674B2/ja
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JP2017564018A 2015-06-11 2015-07-30 高効率の半交差結合デカップリングキャパシタ Active JP6437674B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/736,882 2015-06-11
US14/736,882 US9438225B1 (en) 2015-06-11 2015-06-11 High efficiency half-cross-coupled decoupling capacitor
PCT/US2015/042798 WO2016200411A1 (en) 2015-06-11 2015-07-30 High efficiency half-cross-coupled decoupling capacitor

Publications (3)

Publication Number Publication Date
JP2018521504A JP2018521504A (ja) 2018-08-02
JP2018521504A5 true JP2018521504A5 (enExample) 2018-10-18
JP6437674B2 JP6437674B2 (ja) 2018-12-12

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ID=56878301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017564018A Active JP6437674B2 (ja) 2015-06-11 2015-07-30 高効率の半交差結合デカップリングキャパシタ

Country Status (5)

Country Link
US (1) US9438225B1 (enExample)
EP (2) EP3308464B1 (enExample)
JP (1) JP6437674B2 (enExample)
CN (1) CN108141214B (enExample)
WO (1) WO2016200411A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032763B2 (en) * 2016-06-02 2018-07-24 Qualcomm Incorporated Bulk cross-coupled high density power supply decoupling capacitor
US10892260B2 (en) * 2019-03-06 2021-01-12 Himax Technologies Limited Capacitor
US11244895B2 (en) 2020-06-01 2022-02-08 Qualcomm Incorporated Intertwined well connection and decoupling capacitor layout structure for integrated circuits
KR102861814B1 (ko) 2020-09-29 2025-09-17 삼성전자주식회사 비대칭 디커플링 셀을 포함하는 집적 회로 및 이를 설계하는 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100236876B1 (ko) * 1990-03-28 2000-01-15 가나이 쓰도무 신호의 스윙을 저감하는 cmos 회로
SE470415B (sv) 1992-07-06 1994-02-14 Ericsson Telefon Ab L M Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator
JPH08102652A (ja) 1994-10-03 1996-04-16 Seiko Epson Corp 半導体集積回路
JPH08307229A (ja) 1995-04-28 1996-11-22 Fuji Electric Co Ltd 負荷駆動回路
JPH0993111A (ja) 1995-09-28 1997-04-04 Toshiba Microelectron Corp スルーレート型バッファ回路
JPH09148909A (ja) 1995-11-17 1997-06-06 Hitachi Ltd 半導体集積回路装置
US5883423A (en) * 1996-02-23 1999-03-16 National Semiconductor Corporation Decoupling capacitor for integrated circuit signal driver
JPH11186497A (ja) * 1997-12-17 1999-07-09 Toshiba Corp 半導体集積回路装置
JP3838769B2 (ja) 1997-12-25 2006-10-25 川崎マイクロエレクトロニクス株式会社 出力バッファ回路
JP2000286388A (ja) * 1999-03-30 2000-10-13 Advantest Corp 半導体デバイス
US6936917B2 (en) 2001-09-26 2005-08-30 Molex Incorporated Power delivery connector for integrated circuits utilizing integrated capacitors
JP4342833B2 (ja) * 2003-05-16 2009-10-14 Ｎｅｃエレクトロニクス株式会社 容量セルと半導体装置及びその製造方法
KR100592787B1 (ko) 2004-11-09 2006-06-26 삼성전자주식회사 링 형태의 실리콘 디커플링 커패시터를 가지는 집적회로칩 패키지
JP2006203801A (ja) * 2005-01-24 2006-08-03 Fujitsu Ltd バッファ回路及び集積回路
US8160824B2 (en) 2005-01-27 2012-04-17 Electro Industries/Gauge Tech Intelligent electronic device with enhanced power quality monitoring and communication capabilities
JP4841204B2 (ja) * 2005-08-31 2011-12-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5092263B2 (ja) * 2006-03-31 2012-12-05 富士通セミコンダクター株式会社 デカップリングコンデンサ及び半導体集積回路装置
US7903679B1 (en) 2006-04-11 2011-03-08 Altera Corporation Power supply filtering for programmable logic device having heterogeneous serial interface architecture
US8134824B2 (en) * 2008-02-19 2012-03-13 Arm Limited Decoupling capacitors
JP2009246062A (ja) * 2008-03-31 2009-10-22 Hitachi Ltd 半導体集積回路装置、および、その製造方法
US8345396B2 (en) * 2010-03-08 2013-01-01 Macronix International Co., Ltd. Electrostatic discharge protectors having increased RC delays
US8539422B2 (en) 2011-02-24 2013-09-17 Cadence Design Systems, Inc. Method and system for power delivery network analysis
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9166560B2 (en) * 2011-11-14 2015-10-20 Nec Corporation Decoupling circuit and semiconductor integrated circuit
US8963575B2 (en) * 2012-09-26 2015-02-24 Sandisk Technologies Inc. Analog majority vote circuit

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