JP2018511938A - 半導体レーザの発振波長及び出力パワーの独立制御 - Google Patents
半導体レーザの発振波長及び出力パワーの独立制御 Download PDFInfo
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Abstract
Description
本出願は、2015年3月6日に出願された米国仮特許出願第62/129,607号の利益を主張し、その開示の全体が、あらゆる目的のために参照により本明細書に組み込まれる。
本件は一般に、半導体レーザを駆動するための方法に、より詳細には、このレーザの発振波長及び出力パワーを独立的に制御することに関する。
Claims (22)
- 調整要素及び導波路を有するレーザを駆動する方法であって、
前記レーザの前記調整要素に第1の波形を適用することと、
前記レーザの前記導波路に第2の波形を適用することと、
前記第2の波形を変調するのと同時に前記第1の波形を変調することであって、前記レーザの発振波長及び出力パワーが独立的に制御可能である、ことと、
を含む方法。 - 前記第1の波形が前記第2の波形とは異なっている、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形を非調和的な周波数で変調することを更に含む、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形の少なくとも一方が正弦波的である、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形の少なくとも一方が非正弦波的である、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形を、前記発振波長を正弦波的に変動させるように変調することを更に含む、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形を、前記出力パワーを一定値に維持するように変調することを更に含む、請求項6に記載の方法。
- 前記レーザが光学パワー要件を伴うシステム内に含まれている場合、前記第1の波形及び前記第2の波形を、前記システムが前記光学パワー要件で動作しているように変調することを更に含む、請求項6に記載の方法。
- 前記第1の波形及び前記第2の波形を、注入電流に対する前記出力パワーの導関数がゼロになるように変調することを更に含む、請求項6に記載の方法。
- 前記第1の波形及び前記第2の波形を、前記出力パワーが少なくとも部分的に正弦波的に変動するように変調することを更に含む、請求項6に記載の方法。
- 前記第2の波形が前記発振波長からの0°又は180°の位相シフトを含む、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形を、前記発振波長が一定となるか又は線形に変動するように変調することを更に含む、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形を、注入電流に対する前記出力パワーの導関数がゼロになるように変調することを更に含む、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形を、前記発振波長が線形に変動しかつ前記出力パワーが一定となるように変調することを更に含む、請求項1に記載の方法。
- 前記第1の波形及び前記第2の波形を、前記発振波長が一定となりかつ前記出力パワーが正弦波的に変動するように変調することを更に含む、請求項1に記載の方法。
- 前記発振波長を検出することと、
前記出力パワーを検出することと、
前記検出された発振波長と目標とする波長との間の第1の差異を判定することと、
前記出力パワーと目標とするパワーとの間の第2の差異を判定することと、
前記第1の波形及び前記第2の波形の少なくとも一方を、前記第1の差異及び前記第2の差異の少なくとも一方を低減するように調節することと、
を更に含む、請求項1に記載の方法。 - 1つ以上のプログラムを保存している非一時的コンピュータ可読記憶媒体であって、前記1つ以上のプログラムが、デバイスによって実行されると前記デバイスに、
第1の波形をレーザの第1の電極に適用することであって、前記第1の電極が前記レーザの調整要素に結合されている、適用することと、
第2の波形を前記レーザの第2の電極に適用することであって、前記第2の電極が前記レーザの導波路に結合されている、適用することと、
前記第2の波形を変調するのと同時に前記第1の波形を変調することと、
を含む方法を実行させる命令を含む、非一時的コンピュータ可読記憶媒体。 - 第1の電極及び第2の電極を含むレーザであって、前記第1の電極が第1の波形によって駆動され、前記第2の電極が第2の波形によって駆動される、レーザと、
前記第1の波形及び前記第2の波形を同時変調を実行するよう構成されているロジックであって、前記レーザの発振波長及び出力パワーの少なくとも一方が前記第1の波形及び前記第2の波形の前記同時変調に基づく、ロジックと、
を備えたデバイス。 - 前記レーザの調整範囲が前記レーザの公称波長から少なくとも0.2%である、請求項18に記載のデバイス。
- 前記レーザが分布フィードバック(DFB)又は分布ブラッグ反射器(DBR)レーザである、請求項18に記載のデバイス。
- 前記レーザが、量子カスケードレーザ(QCL)、バンド間カスケードレーザ(ICL)、又はタイプ−Iレーザである、請求項18に記載のデバイス。
- 前記第1の電極が調整要素の一部を形成しており、前記第2の電極がレーザ構造の一部を形成しており、前記調整要素が前記レーザ構造に熱的に結合されている、請求項18に記載のデバイス。
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PCT/US2016/021075 WO2016144831A1 (en) | 2015-03-06 | 2016-03-04 | Independent control of emission wavelength and output power of a semiconductor laser |
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US20200153202A1 (en) | 2020-05-14 |
JP6522772B2 (ja) | 2019-05-29 |
AU2016230025B2 (en) | 2018-05-10 |
US20190190233A1 (en) | 2019-06-20 |
US10535979B2 (en) | 2020-01-14 |
CN112838472B (zh) | 2023-12-26 |
AU2016230025A1 (en) | 2017-09-21 |
CN107408792A (zh) | 2017-11-28 |
EP3251185A1 (en) | 2017-12-06 |
WO2016144831A1 (en) | 2016-09-15 |
US11469570B2 (en) | 2022-10-11 |
CN107408792B (zh) | 2021-01-08 |
US20180083421A1 (en) | 2018-03-22 |
CN112838472A (zh) | 2021-05-25 |
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