US20180083421A1 - Independent control of emission wavelength and output power of a semiconductor laser - Google Patents

Independent control of emission wavelength and output power of a semiconductor laser Download PDF

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US20180083421A1
US20180083421A1 US15/555,049 US201615555049A US2018083421A1 US 20180083421 A1 US20180083421 A1 US 20180083421A1 US 201615555049 A US201615555049 A US 201615555049A US 2018083421 A1 US2018083421 A1 US 2018083421A1
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laser
output power
examples
waveforms
emission wavelength
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Ross M. Audet
Mark Alan ARBORE
Alfredo BISMUTO
Yves BIDAUX
Antoine Jean André MÜLLER
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Apple Inc
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Apple Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/0224—
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06832—Stabilising during amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Definitions

  • This relates generally to methods for driving a semiconductor laser, and more particularly to independently controlling emission wavelength and output power of the laser.
  • Semiconductor lasers may be useful for a range of applications, and in some instances, it may be desirable to have a tunable laser with narrow line widths and single frequency emission. These applications can benefit from tunable lasers with extremely narrow linewidths and single frequency emission.
  • ECL external cavity laser
  • Distributed Bragg Reflector lasers Distributed Feedback lasers with integrated tuning elements
  • the performance of these systems and lasers can be limited by unwanted mechanical moving parts, slow response times, narrow tuning ranges, and nonlinear distortions in the laser output.
  • the methods can include modulating the tuning current and laser injection current such that the laser emission wavelength and output power are independently controllable.
  • the tuning current and laser injection current are modulated simultaneously.
  • one of these currents or both is sinusoidally modulated.
  • a constant output power can be achieved while tuning the emission wavelength.
  • a larger tuning range can be achieved by examples of the disclosure compared to lasers whose tuning current and injection current are not modulated simultaneously.
  • the output power and tuning can follow a linear relationship.
  • injection current and tuning element drive waveforms necessary to achieve targeted output power and tuning waveforms can be achieved through optimization based on goodness of fit between the targeted and actual output power and tuning waveforms.
  • FIG. 1 illustrates an exemplary system in which examples of the disclosure can be implemented.
  • FIG. 2A illustrates a drawing of an external cavity laser system according to examples of the disclosure.
  • FIG. 2B illustrates a longitudinal view of an exemplary Distributed Bragg Reflector laser according to examples of the disclosure.
  • FIG. 2C illustrates a longitudinal view of an exemplary Distributed Feedback Laser according to examples of the disclosure.
  • FIG. 3 illustrates a cross-sectional view of a laser according to examples of the disclosure.
  • FIG. 4A illustrates an exemplary laser with an integrated tuning element according to examples of the disclosure.
  • FIG. 4B illustrates exemplary heat-related time delays for a laser with an integrated tuning element according to examples of the disclosure.
  • FIG. 4C illustrates an exemplary plot of the optical output power in response to a square wave driven on the tuning element electrode, with asymmetry in rise and fall times due to the differences in heat-related time delays according to examples of the disclosure.
  • FIG. 5A illustrates an exemplary relationship between laser injection current and laser output power according to examples of the disclosure.
  • FIG. 5B illustrates an exemplary relationship between laser drive power and emission wavelength or wavenumber according to examples of the disclosure.
  • FIG. 5C illustrates an exemplary relationship between injection current and laser voltage according to examples of the disclosure.
  • FIG. 5D illustrates an exemplary relationship between the temperature of the active region and the thermal rollover power according to examples of the disclosure.
  • FIG. 5E illustrates an exemplary relationship between tuning element power and laser output power according to examples of the disclosure.
  • FIG. 5F illustrates an exemplary relationship between tuning element power and emission wavelength or wavenumber according to examples of the disclosure.
  • FIG. 5G illustrates an exemplary relationship between tuning element drive current and tuning element voltage according to examples of the disclosure.
  • FIG. 6 illustrates an exemplary setup for simultaneous modulation and dynamic adjustment of the emission wavelength and output power from a laser according to examples of the disclosure.
  • FIG. 7A illustrates an exemplary sinusoidally modulated drive waveform applied to the tuning element and a constant drive waveform applied to the waveguide of a laser according to examples of the disclosure.
  • FIG. 7B illustrates exemplary sinusoidally modulated drive waveforms applied to the electrodes of a laser according to examples of the disclosure.
  • FIG. 7C illustrates exemplary sinusoidally varying wavelength shift and constant output power below a thermal rollover power from a laser according to examples of the disclosure.
  • FIG. 7D illustrates exemplary sinusoidally varying wavelength shift and output power at or near a thermal rollover power from a laser according to examples of the disclosure.
  • FIG. 7E illustrates exemplary sinusoidally varying wavelength shift and constant output power equal to a system requirement value according to examples of the disclosure.
  • FIG. 7F illustrates exemplary non-sinusoidally modulated drive waveforms applied to the electrodes of the laser according to examples of the disclosure.
  • FIG. 7G illustrates an exemplary linear ramp of the emission wavelength with a constant output power below a thermal rollover power from a laser according to examples of the disclosure.
  • FIG. 7H illustrates an exemplary linear ramp of the emission wavelength and an output power at or near the thermal rollover power according to the examples of the disclosure.
  • FIG. 7I illustrates exemplary variable wavelength shift and variable output power from a laser according to examples of the disclosure.
  • FIGS. 8A-8B illustrate exemplary process flows for optimizing the injection current and tuning element current according to examples of the disclosure.
  • any sequence or order of steps that can be described in the disclosure does not, in and of itself, indicate a requirement that the steps be performed in that order. Further, some steps may be performed simultaneously despite being described or implied as occurring non-simultaneously (e.g., because one step is described after the other step).
  • the illustration of a process by its depiction in a drawing does not imply that the illustrated process is exclusive of other variations and modification thereto, does not imply that the illustrated process or any of its steps are necessary to one or more of the examples, and does not imply that the illustrated process is preferred.
  • This disclosure relates to methods for driving a tunable laser with integrated tuning elements.
  • the tuning current and laser injection current can be modulated such that the laser emission wavelength and output power are independently controllable.
  • a wider tuning range compared to a laser whose tuning current and injection current are not modulated simultaneously
  • the laser can emit a substantially constant output power while the emission wavelength is tuned.
  • unwanted mechanical moving parts and compromise in the performance of the laser such as slow response times and nonlinear distortions, can be avoided or reduced.
  • FIG. 1 illustrates an exemplary system in which examples of the disclosure can be implemented.
  • Trace gas detection system 110 can include a display 112 , laser 114 , and detector 116 .
  • Laser 114 can be configurably operable using any of the methods and waveforms as will be disclosed.
  • Tunable semiconductor lasers are needed for many applications, such as trace gas detection, environmental monitoring, biomedical diagnostics, telecommunications, and industrial process controls. These applications, in particular, can benefit from tunable lasers with narrow or extremely narrow linewidths and single frequency emission.
  • wall-mountable trace gas detection system 110 can be located in a user's garage and can be used to detect if the exhaust from an automobile parked in the garage exceeds a safe level.
  • the wall-mountable trace gas detection system 110 can provide a warning on display 112 and additionally transmit the information to a mobile telephone.
  • the mobile telephone can warn the user of the hazard and can prevent the user from entering the garage.
  • FIG. 2A illustrates a drawing of an external cavity laser system according to examples of the disclosure.
  • the ECL system 208 can include a gain medium 200 , lens 202 , and diffraction grating 204 .
  • the emission wavelength of the ECL system 208 can be tuned by rotating the diffraction grating 204 .
  • the ECL system 208 can achieve a wide tuning range, the system can include macroscopic mechanical moving parts and thus can have limited tuning speed, can require precision alignment, can be susceptible to mechanical vibrations, and can have a tendency to exhibit mode hops.
  • the external cavity laser architecture can be impractical for many of the applications discussed earlier, especially when used in portable electronic devices.
  • DBR Distributed Bragg Reflector
  • DFB Distributed Feedback
  • FIG. 2B illustrates a longitudinal view of an exemplary DBR laser according to examples of the disclosure.
  • DBR laser 210 can comprise one or more diffraction gratings located in a grating section 212 that can be separate from the gain section 214 .
  • DBR laser 210 can include grating sections, such as grating section 212 , located at both ends of the device (not shown).
  • the diffraction grating can be located on or above the active region 216 and can be employed to provide optical feedback to reflect light back into the cavity to form a resonator.
  • the grating can be configured to reflect only narrow bands of wavelengths to produce a single longitudinal mode wavelength, and the period of the grating can be adjusted to achieve specific laser emission wavelengths.
  • FIG. 2C illustrates a longitudinal view of an exemplary DFB laser according to examples of the disclosure.
  • DFB laser 220 can comprise a diffraction grating located in grating section 222 , which can be integrated into or located on the active region 226 .
  • the structure and functionality of the diffraction grating of a DFB laser can be similar to that of a DBR laser.
  • the DFB laser can have a gain section that coincides with the grating section. Since the gain section of the DFB laser can be located in the same region as the grating section 222 , DFB lasers can have shorter cavity lengths. Additionally, DFB lasers can be less susceptible to mode hops.
  • FIG. 3 illustrates a cross-sectional view of a laser according to examples of the disclosure.
  • Laser 300 can comprise a substrate 310 , cladding layers 312 , insulating cladding 318 , active region 314 , and electrodes 316 .
  • Laser 300 can be mounted to or touching submount 320 .
  • Laser 300 can be driven by a source 324 that supplies an injection current I L , for example.
  • I L injection current
  • the temperature of the active region 314 or the injection current I L can be adjusted. In some examples, the temperature can be adjusted to coarsely tune the emission wavelength, and the injection current I L can be adjusted for more precise tuning.
  • a thermo-electric cooler (TEC) 322 can apply heat to submount 320 .
  • the heat can pass through the electrode 316 , substrate 310 , and cladding layer 312 to active region 314 , which can cause a change in the refractive index of the grating (located on or above active region 314 ).
  • the change in refractive index can lead to a change in the emission wavelength. Therefore, the emission wavelength of laser 300 can be tuned by changing the heat applied through TEC 322 .
  • Heating the laser may require a lot of power from TEC 322 .
  • TEC 322 can lead to a slow response resulting in slow tuning speeds, as TEC 322 may need to cool and heat the laser 300 , submount 320 , and heat sink (not shown). Accordingly, the time delay between applying the heat and achieving the targeted emission wavelength can be on the order of seconds, and many applications may need quicker adjustment of the laser emission wavelength.
  • Another method of tuning laser 300 can be through the injection current I L .
  • Injection current I L can be used to drive the laser through electrodes 316 . Similar to using heater 322 , the injection current I L can heat up the active region 314 resulting in a change in the emission wavelength.
  • the tuning range can be limited when using this method because the laser efficiency may decrease at the high injection currents necessary to substantially increase the temperature.
  • the tuning range can be on the order of about 0.2% from the nominal wavelength. For a 9 ⁇ m laser, this can lead to a tuning range of only 0.036 ⁇ m, which may be insufficient for applications such as spectroscopy.
  • independent control of the laser output power and the emission wavelength may not be possible, since both the output power and emission wavelength can be influenced by the injection current.
  • FIG. 4A illustrates an exemplary laser with an integrated tuning element according to examples of the disclosure.
  • Laser 450 can comprise a substrate 460 , cladding layers 462 , insulated cladding 463 , active region 464 , electrodes 456 , 466 , and 468 , and resistive cladding 461 .
  • Laser 450 can comprise two separate structures 480 and 482 .
  • Structure 480 can be a tuning element
  • structure 482 can be a laser structure, for example.
  • a source 474 can be connected to the top and bottom electrodes 456 and 468 of the laser structure 482 to provide an injection current I L to drive the laser 450 .
  • Tuning element or structure 480 can be an electrically contacted structure that is in close proximity to structure 482 .
  • Source 476 can be connected to the top electrode 466 to provide tuning current I T to drive the tuning element or structure 480 .
  • trench 478 forms an electrical resistor that generates heat when current is provided by source 476 . While FIG. 4A shows sources 474 and 476 as current sources, one skilled in the art would understand that any type of source can be connected. Examples of the disclosure can include, but are not limited to, source 476 altering the modal refractive index of the laser waveguide through heating, plasma dispersion effects, electro-optic effects, or a combination.
  • Source 474 can drive the laser through injection current I L to achieve a targeted output power, and source 476 can adjust the temperature of the active region 464 through tuning current I T to achieve a targeted emission wavelength.
  • adjusting the injection current I L can affect the temperature of the active region 464
  • adjusting the tuning current I L can affect the gain of the laser 450 . Since the injection current I L and the tuning current I T are not entirely decoupled, adjusting the injection current I L and adjusting the tuning current I T can have limited flexibility in optimizing the emission wavelength without negatively affecting the optical losses or electrical properties of the laser.
  • the laser can also include multiple heat-related time delays, as shown in FIG. 4B .
  • Path 490 and 496 can be associated with heat induced by the tuning element current or source 476 .
  • Paths 492 and 494 can be associated with heating or cooling induced by TEC 422 .
  • Heat along path 490 can diffuse from the tuning element to the active region 464 in the laser structure, leading to a time delay that can be on the order of hundreds of ⁇ s.
  • Heat along path 496 can diffuse through insulating cladding 463 , substrate 460 , and electrode 468 to TEC 422 .
  • Heat along path 494 can diffuse from the submount (not shown) and substrate 460 to the active region 464 to heat the laser ridge, and heat along path 492 can diffuse from the laser ridge to the substrate 460 and submount to cool the laser ridge.
  • the time delays from paths 492 and 494 can be about 1-100 ms. Due to the large difference between the time delays of path 490 and path 492 / 494 , the use of source 476 and 474 along with TEC 422 can lead to nonlinear distortions and long response times.
  • FIG. 4C illustrates an exemplary plot of the output power response to a square wave modulation of the tuning element source 476 due to the differences in heat-related time delays according to examples of the disclosure.
  • FIGS. 5A-5C illustrate exemplary effects of altering the injection current applied to the laser according to examples of the disclosure.
  • FIG. 5A illustrates an exemplary relationship between laser injection current and laser output power according to examples of the disclosure.
  • the laser output power can be linearly dependent on the injection current above the laser threshold current.
  • the slope efficiency of the laser can be determined based on this linear dependency.
  • this linear dependence can break down due to an increase in the temperature of the active region causing a decrease in internal quantum efficiency, which in turn can cause the output power to saturate (i.e., thermal rollover).
  • FIG. 5B illustrates an exemplary relationship between laser drive power and emission wavelength or wavenumber according to examples of the disclosure.
  • the emission wavelength or wavenumber can be linearly dependent on the laser drive power.
  • the emission wavelength can redshift with increased drive power.
  • a change in temperature of the active region can lead to a change in the refractive index, and therefore a change in the emission wavelength.
  • FIG. 5C illustrates an exemplary relationship between injection current and laser voltage according to examples of the disclosure.
  • the shift in emission wavelength that results from thermal tuning can be proportional to the power dissipation inside the laser, which can be related to the product of the voltage and current. Due to the relationship between injection current and laser voltage illustrated in the figure, the emission wavelength may not be directly proportional to the injection current.
  • FIG. 5D illustrates an exemplary relationship between the temperature of the active region and the thermal rollover power according to examples of the disclosure.
  • the temperature of the active region can increase. Above a certain injection current, the temperature of the active region can be so high that a reduction in the efficiency of the laser and a deviation from the linear dependency (or slope of the plot illustrated in FIG. 5A ) can result.
  • the output power can saturate to a maximum output power (i.e., thermal rollover power or where the derivative of power to injection current is zero) within the safe operating range of the laser.
  • the maximum output power or thermal rollover power can depend on many factors including, but not limited to, the heatsink or substrate temperature, the tuning or heater current, device length, and device design.
  • the thermal rollover power can decrease as the temperature of the active region increases, as shown in the figure. As a result, the thermal rollover power can vary for the same laser device depending on operating conditions.
  • FIGS. 5E-5G illustrate exemplary effects of altering the tuning element of the laser according to examples of the disclosure.
  • FIG. 5E illustrates an exemplary relationship between tuning element power and laser output power according to examples of the disclosure.
  • the laser output power can be linearly dependent on the tuning element power. As shown in the figure, the laser output power can decrease as tuning power is increased.
  • FIG. 5F illustrates an exemplary relationship between tuning element power and emission wavelength or wavenumber according to examples of the disclosure.
  • the emission wavelength can be nearly linear dependent on the tuning element drive power.
  • the laser output power can decrease as tuning element drive power increases.
  • FIG. 5G illustrates an exemplary relationship between tuning element drive current and tuning element voltage according to examples of the disclosure.
  • the IV curve of the tuning element may become nonlinear at high tuning element currents. This nonlinear relationship can cause the laser output power and emission wavelength to diverge from having a known relationship (e.g., quadratic dependence) with respect to the tuning element current. Due to divergence from a known relationship and because of the coupling between the injection current and tuning element current with emission wavelength and output power, simultaneous optimization of the emission wavelength and output power can become a challenge. Additionally, the performance of the laser (e.g., tuning range and output power) can be limited.
  • FIG. 6 illustrates a setup for simultaneous modulation and dynamic adjustment of the emission wavelength and output power of a laser according to examples of the disclosure.
  • the setup can include a laser 600 .
  • Laser 600 can include, but is not limited to, a DFB or DBR semiconductor laser, such as a quantum cascade laser (QCL), interband cascade laser (ICL), or type-I laser. In some examples, the laser can operate in several wavelength ranges including the near- and mid-infrared.
  • Laser 600 can include two separate electrodes 664 and 666 . One electrode, such as electrode 664 , can be coupled to the tuning element (such as structure 480 illustrated in FIG. 4A ). The other electrode, such as electrode 666 , can be coupled to the laser structure (such as structure 482 illustrated in FIG. 4A ).
  • Two sources can be coupled to the electrodes to independently drive the electrodes.
  • source 676 can be coupled to electrode 666 of the tuning element, and source 674 can be coupled to electrode 664 of the laser.
  • the output 672 of laser 600 can be directed at lens 630 , which can reflect off mirror 632 .
  • Beamsplitter 634 can split the optical beam into two different paths 640 and 642 .
  • Path 640 can be directed at detector 644 .
  • Path 642 can be directed at mirror 636 , which can reflect the light to detector 646 .
  • Detector 644 can measure the laser output power, and detector 646 can measure emission wavelength.
  • an etalon can be included in path 642 between mirror 636 and detector 646 .
  • an optical spectrometer can be used to measure emission wavelength.
  • the detected signals from detectors 644 and 646 can be input to a computer or controller 650 .
  • the controller 650 can monitor deviations between the detected signals and the targeted signals or response waveform. Based on the deviations, the controller 650 can generate drive waveforms 613 and 615 . Drive waveforms 613 and 615 can be new waveforms or adjusted waveforms used to minimize or reduce the deviations. Digital-to-analog converters (DACs) 652 and 654 can be coupled to controller 650 and sources 674 and 676 to convert the signals or waveforms generated by controller 650 from digital to analog signals.
  • DACs Digital-to-analog converters
  • FIGS. 7A-7B and 7F illustrate exemplary drive waveforms applied to the electrodes of a laser according to examples of the disclosure.
  • FIGS. 7C-7E, 7G-7I illustrate exemplary output waveforms of the laser according to examples of the disclosure.
  • the tuning current 702 can be sinusoidally modulated, while the laser injection current 704 can be constant.
  • both the tuning current 702 and laser injection current 704 can be sinusoidally modulated (as shown in FIG. 7B ).
  • the laser injection current 704 can be proportional to the square root of the sine of the modulating tuning current 702 .
  • Exemplary resulting output waveforms are shown in FIG. 7C , where the wavelength shift 706 of the laser can vary sinusoidally. Additionally, the laser can emit a constant or substantially constant output power 708 .
  • This example shows that a substantially constant output power can be achieved while tuning the wavelength. With the injection current greater than the threshold current, the output power can be less than the thermal rollover power for a given tuning range or range of wavelength shift. As a result, the output power can be varied (increased or decreased) to achieve a desired tuning range. Achieving a constant output power while tuning the wavelength can be useful for applications such as wavelength modulation spectroscopy.
  • FIG. 7D illustrates exemplary waveforms where the laser can be operated such that the output power is close to the thermal rollover power according to examples of the disclosure.
  • the laser can be operated with an output power where the output power to current slope begins to deviate from a linear relationship (i.e., close to the thermal rollover power).
  • the laser can be operated such that the output power is substantially equal to the thermal rollover power, leading to a decreased tuning range compared to when the output power 708 is substantially less than the thermal rollover power 710 .
  • the laser can be operated with an output power between deviation from the linear relationship and the thermal rollover power (i.e., power where the derivative of the output power to current is zero).
  • Examples of the disclosure include adjusting the operating conditions of the laser such that derivative of the output power to current is zero given the active region temperature. Operating the laser such that the output power 708 is substantially equal or close to the thermal rollover power 710 can be useful for applications such as wavelength modulation spectroscopy measurements that are normalized to a reference detector.
  • a larger tuning range can be achieved by decreasing the output power.
  • the laser can be operated such that the output power is can be based on the requirements needed for the system or application in which the laser is employed. As illustrated in FIG. 7E , by operating the laser with conditions such that the system optical power requirement 711 is met but the requirements are not substantially exceeded, a larger tuning range or wavelength shift can be achieved compared to the tuning range when operating the laser above system requirements.
  • trace gas detection system discussed above and illustrated in FIG. 1
  • located in a user's garage can be configured such that a detected carbon monoxide level less than 400 ppm is within a safe level.
  • the system requirement can be defined by the operating conditions which 400 ppm of carbon monoxide is detected.
  • the laser associated with the trace gas detection system (such as laser 114 illustrated in FIG. 1 ) can then operate at a value such that the system requirement is met, 400 ppm of carbon monoxide is detected, and a wider tuning range is achieved (than operating the laser such that the system requirements are exceeded).
  • the value can be equal to system operation at 1-10% above system requirements.
  • the amount of phase that differs between tuning current 702 , laser injection current 704 , and wavelength shift 706 can depend on the frequency of modulation. In some examples, the phase difference between the laser injection current 704 and the wavelength shift 706 can be 0° or 180°.
  • the disclosure includes thermal heating as a tuning mechanism, examples of the disclosure can include, and are not limited to, other tuning mechanisms such as carrier concentration modulation.
  • FIG. 7F illustrates exemplary non-sinusoidally modulated drive waveforms applied to the electrodes of the laser according to examples of the disclosure.
  • the tuning current 712 can be modulated, but unlike the tuning current 702 of FIG. 7A , tuning current 712 can be non-sinusoidal in order to correct for nonlinearities and thermal time constants, such as the nonlinearities and thermal time constants discussed above.
  • laser injection current 714 can be non-sinusoidal. The results can be a sinusoidally varying output wavelength and an output power that is constant.
  • FIG. 7G illustrates an exemplary linear ramp of the emission wavelength with a constant output power below a thermal rollover power from a laser according to examples of the disclosure. This example also shows that the emission wavelength can be tuned without affecting the output power of the laser. Linearly tuning the laser while achieving a constant output power that is less than the thermal rollover power 730 can be useful for applications such as direct absorption spectroscopy.
  • the laser can be operated such that the output power waveform has the same shape as the thermal rollover power, as illustrated in FIG. 7H .
  • FIG. 7H illustrates an exemplary linear ramp of the emission wavelength with an output power close to the thermal rollover power according to the examples of the disclosure.
  • the laser can be operated at conditions such that the output power 728 is substantially equal to the thermal rollover power 730 while linearly changing the wavelength shift 726 .
  • Such a linear change in emission wavelength can be useful for applications such as direct absorption spectroscopy with normalization to a reference detector.
  • FIG. 7I illustrates exemplary variable wavelength shift and variable output power over time from a laser according to examples of the disclosure.
  • both output power 748 and wavelength shift 746 can vary sinusoidally.
  • output power 748 and wavelength shift 746 can both vary at non-harmonically related frequencies. Simultaneous sinusoidal modulation of both output power and emission wavelength can be useful for applications such as wavelength modulation spectroscopy.
  • the exemplary figures described above can represent targeted waveforms.
  • the resulting output waveforms can differ from the targeted waveforms due to nonlinearities (not shown).
  • FIGS. 8A-8B illustrate exemplary process flows for optimizing the injection current and tuning element current according to examples of the disclosure.
  • Process 800 can begin with dividing a time interval into a series of sample points (step 802 ).
  • process 800 can be performed by a processor or controller (such as controller 650 of FIG. 6 ).
  • the time interval can be based on a repetition period of the desired power and wavelength response waveforms.
  • the controller can determine the target output power and emission wavelength at each sample point (step 804 ) and from this, can calculate the expected photodiode signals (step 806 ).
  • the expected photodiode signals can be based on factors such as the response curves of the photodiode, the length of the etalon, the optical properties of the etalon, the response of the spectrometer, or any combination.
  • the controller can set the tuning element current and laser drive current to initial values (step 808 ).
  • the tuning element can be set to zero, and the laser drive current can be set to a constant value above threshold (i.e., value that the laser is turned on).
  • the laser can be driven using pre-determined waveforms.
  • the pre-determined waveforms can be based on previous characterization data from the laser.
  • the pre-determined waveforms can include, but are not limited to, light IV curves for different injection currents and tuning element currents and step responses of injection current perturbations.
  • the controller or a signal acquisition system can detect the output signals and digitize over the time interval (step 810 ).
  • the time interval can be one time interval.
  • the output signals can be signals measured from the detectors, such as detectors 644 and 646 of FIG. 6 .
  • the goodness of fit can be calculated (step 812 ).
  • the goodness of fit can be a figure of merit to quantify the difference between the targeted and measured laser outputs or waveforms, including the output powers and emission wavelengths.
  • the GOF can be defined as:
  • W(t) is the measured wavelength at time t
  • W T (t) is the targeted wavelength at time t
  • P(t) is the measured output power at time t
  • P T (t) is the targeted output power at time t
  • w 1 and w 2 are weighted values
  • P is the number of sample points in the time interval.
  • the controller can optimize the drive injection current or tuning element current or both (step 814 ).
  • Process 850 of FIG. 8B illustrates an exemplary flow diagram of optimizing the drive injection current or tuning element current.
  • the controller can begin with the first sample point in the time interval (step 852 ).
  • the controller can change the laser injection current or tuning element current or both in a first direction (step 854 ), and then detect the output waveform (step 856 ) and calculate the first GOF (step 856 ) from the change in the first direction.
  • the controller can also change the laser injection current or tuning element current or both in a second direction (step 860 ), and then detect the output waveform (step 862 ) and calculate the second GOF (step 864 ) from the change in the second direction.
  • the first direction can be opposite the second direction.
  • the first direction can be one step size higher in value and the second direction can be one step size lower in value than the injection current set in step 808 of FIG. 8A .
  • the first GOF and second GOF can be compared. Based on which GOF has the lowest value (compared to the other GOF) or deviation from a pre-determined or targeted GOF, the drive waveforms can be adjusted.
  • the controller can determine if all of the sample points have been tested (step 870 ). If not, the controller can move to the next sample point (step 872 ) and repeat the adjustment process for that next sample point. If all sample points have been tested, the drive waveforms can be stored in memory (step 874 ).
  • processes 800 and 850 can be repeated until a certain GOF value is achieved. In some examples, processes 800 and 850 can run continuously or at incremental periods while the laser is operating to actively correct for any drift in the source properties over time.
  • firmware stored in memory and executed by a processor or controller (such as controller 650 of FIG. 6 ).
  • the firmware can also be stored and/or transported within any non-transitory computer-readable storage medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions.
  • a “non-transitory computer-readable storage medium” can be any medium (excluding a signal) that can contain or store the program for use by or in connection with the instruction execution system, apparatus, or device.
  • the non-transitory computer readable storage medium can include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, a portable computer diskette (magnetic), a random access memory (RAM) (magnetic), a read-only memory (ROM) (magnetic), an erasable programmable read-only memory (EPROM) (magnetic), a portable optical disc such as a CD, CD-R, CD-RW, DVD, DVD-R, or DVD-RW, or flash memory such as compact flash cards, secured digital cards, USB memory devices, memory sticks and the like.
  • a “transport medium” can be any medium that can communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device.
  • the transport readable medium can include, but is not limited to, an electronic, magnetic, optical, electromagnetic, or infrared wired or wireless propagation medium.
  • a method of driving a laser having a tuning element and a waveguide may comprise: applying a first waveform to the tuning element of the laser; applying a second waveform to the waveguide of the laser; modulating the first waveform simultaneously with modulating the second waveform, wherein an emission wavelength and an output power of the laser are independently controllable. Additionally or alternatively to one or more examples disclosed above, in other examples, the first waveform is different from the second waveform. Additionally or alternatively to one or more examples disclosed above, in other examples, the method further comprises modulating first and second waveforms at non-harmonic frequencies. Additionally or alternatively to one or more examples disclosed above, in other examples, at least one of the first waveform and the second waveform is sinusoidal.
  • the method further comprises modulating the first and second waveforms to vary the emission wavelength sinusoidally. Additionally or alternatively to one or more examples disclosed above, in other examples, the method further comprises modulating the first and second waveforms to maintain the output power at a constant value. Additionally or alternatively to one or more examples disclosed above, in other examples, wherein the laser is included in a system with a requirement the method further comprises modulating the second waveform such that the system is operating at the requirement.
  • the method further comprises modulating the second waveform such that a derivative of the output power to an injection current is zero. Additionally or alternatively to one or more examples disclosed above, in other examples, the method further comprises modulating the first and second waveforms such that the output power varies at least in part sinusoidally. Additionally or alternatively to one or more examples disclosed above, in other examples, the second waveform includes a 0° or 180° phase shift from the emission wavelength. Additionally or alternatively to one or more examples disclosed above, in other examples, the method further comprises modulating the first and second waveforms such that the emission wavelength is constant or varies linearly.
  • the method further comprises modulating the first and second waveforms such that a derivative of the output power to injection current is zero. Additionally or alternatively to one or more examples disclosed above, in other examples, the method further comprises modulating the first and second waveforms such that the emission wavelength varies linearly and the output power is constant. Additionally or alternatively to one or more examples disclosed above, in other examples, the method further comprises modulating the first and second waveforms such that the emission wavelength is constant and the output power varies sinusoidally.
  • the method further comprises: detecting the emission wavelength; detecting the output power; determining a first difference between the detected emission wavelength and a targeted wavelength; determining a second difference between the output power and a targeted power; and adjusting at least one of the first and second waveforms to reduce at least one of the first difference and the second difference.
  • a non-transitory computer readable storage medium may store one or more programs, the one or more programs comprising instructions, which when executed by a device, cause the device to perform a method comprising: applying a first waveform to a first electrode of a laser, wherein the first electrode is coupled to a tuning element of the laser; applying a second waveform to a second electrode of the laser, wherein the second electrode is coupled to a waveguide of the laser; and modulating the first waveform simultaneously with modulating the second waveform.
  • a device may comprise: a laser including a first electrode and a second electrode, wherein the first electrode is driven by a first waveform and the second electrode is driven by a second waveform; and logic configured to modulate the first and second waveforms simultaneously, wherein at least one of an emission wavelength and an output power of the laser are based on the simultaneous modulation of the first and second waveforms.
  • a tuning range of the laser is at least 0.2% of a center wavelength of the laser.
  • the laser is a Distributed Feedback (DFB) or a Distributed Bragg Reflector (DBR) laser.
  • DFB Distributed Feedback
  • DBR Distributed Bragg Reflector
  • the laser is a quantum cascade laser (QCL), interband cascade laser (ICL), or type-I laser.
  • QCL quantum cascade laser
  • ICL interband cascade laser
  • type-I laser type-I laser
  • the first electrode forms a portion of a tuning element and the second electrode forms a portion of a laser structure, the tuning element thermally coupled to the laser structure.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11437779B2 (en) 2015-04-30 2022-09-06 Apple Inc. Vernier effect DBR lasers incorporating integrated tuning elements
US11469570B2 (en) 2015-03-06 2022-10-11 Apple Inc. Independent control of emission wavelength and output power of a semiconductor laser
US11552454B1 (en) 2017-09-28 2023-01-10 Apple Inc. Integrated laser source
US11777279B2 (en) 2017-09-28 2023-10-03 Apple Inc. Laser architectures using quantum well intermixing techniques
US11804693B2 (en) 2020-03-18 2023-10-31 Northrop Grumman Systems Corporation Method and device for ultraviolet to long wave infrared multiband semiconducting single emitter
US11923654B2 (en) 2018-12-14 2024-03-05 Apple Inc. Laser integration techniques

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107910749A (zh) * 2017-11-20 2018-04-13 烽火通信科技股份有限公司 无啁啾的增益调制半导体激光器装置及激光强度调制方法
CN111344917B (zh) * 2017-12-15 2023-09-12 株式会社堀场制作所 半导体激光器、驱动控制装置和半导体激光器的控制方法
DE102018118694A1 (de) * 2018-08-01 2020-02-06 Osram Opto Semiconductors Gmbh Laserdiodenchip
CN114990650B (zh) * 2022-05-30 2024-01-05 江苏大学 一种激光调谐电流波形制备功能性梯度镀层的方法及装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080159341A1 (en) * 2006-06-23 2008-07-03 Patel C Kumar N Tunable quantum cascade lasers and photoacoustic detection of trace gases, TNT, TATP and precursors acetone and hydrogen peroxide
US20130223461A1 (en) * 2012-01-19 2013-08-29 Insight Photonic Solutions, Inc. System and method for generating an optimum side-mode suppression ratio continuous tuning path for a semiconductor tunable laser

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4896325A (en) 1988-08-23 1990-01-23 The Regents Of The University Of California Multi-section tunable laser with differing multi-element mirrors
JPH04116878A (ja) * 1990-09-07 1992-04-17 Ricoh Co Ltd ヒータ付半導体レーザ素子
US5483261A (en) 1992-02-14 1996-01-09 Itu Research, Inc. Graphical input controller and method with rear screen image detection
US5325392A (en) 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
JPH05315706A (ja) * 1992-05-11 1993-11-26 Mitsubishi Electric Corp 半導体レーザ
US5880411A (en) 1992-06-08 1999-03-09 Synaptics, Incorporated Object position detector with edge motion feature and gesture recognition
US5488204A (en) 1992-06-08 1996-01-30 Synaptics, Incorporated Paintbrush stylus for capacitive touch sensor pad
US5473625A (en) * 1994-09-26 1995-12-05 At&T Corp. Tunable distributed Bragg reflector laser for wavelength dithering
FR2725527B1 (fr) 1994-10-10 1996-12-20 Talneau Anne Filtre optique pour plusieurs longueurs d'ondes guidees
US5825352A (en) 1996-01-04 1998-10-20 Logitech, Inc. Multiple fingers contact sensing method for emulating mouse buttons and mouse operations on a touch sensor pad
JP3405046B2 (ja) * 1996-02-22 2003-05-12 Ｋｄｄｉ株式会社 レーザ光発生装置
US5835079A (en) 1996-06-13 1998-11-10 International Business Machines Corporation Virtual pointing device for touchscreens
US5991061A (en) * 1997-10-20 1999-11-23 Lucent Technologies Inc. Laser transmitter for reduced SBS
US6310610B1 (en) 1997-12-04 2001-10-30 Nortel Networks Limited Intelligent touch display
KR100595924B1 (ko) 1998-01-26 2006-07-05 웨인 웨스터만 수동 입력 통합 방법 및 장치
US7663607B2 (en) 2004-05-06 2010-02-16 Apple Inc. Multipoint touchscreen
US8479122B2 (en) 2004-07-30 2013-07-02 Apple Inc. Gestures for touch sensitive input devices
GB9809583D0 (en) 1998-05-06 1998-07-01 Marconi Gec Ltd Optical devices
US6188391B1 (en) 1998-07-09 2001-02-13 Synaptics, Inc. Two-layer capacitive touchpad and method of making same
JP4542637B2 (ja) 1998-11-25 2010-09-15 セイコーエプソン株式会社 携帯情報機器及び情報記憶媒体
US6690693B1 (en) * 2000-05-04 2004-02-10 Agility Communications, Inc. Power and wavelength control of sampled grating distributed Bragg reflector lasers
US20020181521A1 (en) * 2000-05-04 2002-12-05 Crowder Paul F. Gain voltage control of sampled grating distributed bragg reflector lasers
US6788719B2 (en) 2000-05-04 2004-09-07 Agility Communications, Inc. Open loop control of SGDBR lasers
IL137732A (en) * 2000-08-07 2006-12-31 Crosslight Photonics Ltd Characterization of a semiconductor laser with several parts
JP2002164615A (ja) * 2000-11-24 2002-06-07 Fujitsu Ltd 光半導体装置及び光半導体モジュール
AU2002251176A1 (en) 2001-03-19 2002-10-03 Bookham Technology Tuneable laser
JP3800984B2 (ja) 2001-05-21 2006-07-26 ソニー株式会社 ユーザ入力装置
GB2380058A (en) 2001-09-21 2003-03-26 Marconi Caswell Ltd Telecommunication laser transmitter systems and methods of operating such systems
JP2003173237A (ja) 2001-09-28 2003-06-20 Ricoh Co Ltd 情報入出力システム、プログラム及び記憶媒体
US6690387B2 (en) 2001-12-28 2004-02-10 Koninklijke Philips Electronics N.V. Touch-screen image scrolling system and method
US6647032B1 (en) 2002-01-31 2003-11-11 Intel Corporation Thermally wavelength tunable laser having selectively activated gratings
US11275405B2 (en) 2005-03-04 2022-03-15 Apple Inc. Multi-functional hand-held device
US20040174915A1 (en) 2002-09-18 2004-09-09 Adc Telecommunications, Inc. Method for characterizing tunable lasers
EP1432087A1 (en) 2002-12-20 2004-06-23 Intune Technologies Limited Multisection laser diode system and frequency sweeping method
KR100541913B1 (ko) 2003-05-02 2006-01-10 한국전자통신연구원 추출 격자 브래그 반사기와 결합된 추출 격자 분포궤환파장가변 반도체 레이저
JP4290541B2 (ja) * 2003-12-08 2009-07-08 日本電信電話株式会社 波長可変光源および光送信器
US20060088068A1 (en) * 2004-10-13 2006-04-27 Intune Technologies Low noise swept wavelength laser system and method
JP4231854B2 (ja) 2005-03-17 2009-03-04 アンリツ株式会社 半導体レーザ素子及びガス検知装置
JP4657853B2 (ja) 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法
GB2430760A (en) 2005-09-29 2007-04-04 Bookham Technology Plc Chirped Bragg grating structure
US20070116076A1 (en) * 2005-11-21 2007-05-24 Frank Wang Controlling optical power and extincation ratio of a semiconductor laser
US20080063016A1 (en) 2006-09-13 2008-03-13 Vikram Bhatia Thermal compensation in semiconductor lasers
US8184671B2 (en) 2006-10-31 2012-05-22 Anritsu Corporation Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser
JP4850757B2 (ja) 2007-03-08 2012-01-11 日本電信電話株式会社 波長可変半導体レーザ素子及びその制御装置、制御方法
KR101381235B1 (ko) 2010-08-31 2014-04-04 한국전자통신연구원 이중 모드 반도체 레이저 및 이를 이용한 테라헤르츠파 장치
WO2013016249A2 (en) 2011-07-22 2013-01-31 Insight Photonic Solutions, Inc. System and method of dynamic and adaptive creation of a wavelength-continuous and prescribed wavelength versus time sweep from a laser
US8995483B2 (en) * 2011-12-16 2015-03-31 Eos Photonics, Inc. Methods and apparatus for temperature tuning of semiconductor lasers
CN102522697A (zh) * 2012-01-09 2012-06-27 桂林优西科学仪器有限责任公司 Dbr可调谐激光光源系统及其控制方法
EP2849294B1 (en) 2013-09-13 2019-07-31 Alpes Lasers S.A. A Tunable Laser
JP2015115411A (ja) * 2013-12-10 2015-06-22 日本電信電話株式会社 高速波長掃引光源
CN104393482A (zh) * 2014-12-08 2015-03-04 浙江大学 基于半波耦合半导体激光器的准连续调谐系统及调谐方法
AU2016230025B2 (en) 2015-03-06 2018-05-10 Apple Inc. Independent control of emission wavelength and output power of a semiconductor laser
WO2016176364A1 (en) 2015-04-30 2016-11-03 Apple Inc. Vernier effect dbr lasers incorporating integrated tuning elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080159341A1 (en) * 2006-06-23 2008-07-03 Patel C Kumar N Tunable quantum cascade lasers and photoacoustic detection of trace gases, TNT, TATP and precursors acetone and hydrogen peroxide
US20130223461A1 (en) * 2012-01-19 2013-08-29 Insight Photonic Solutions, Inc. System and method for generating an optimum side-mode suppression ratio continuous tuning path for a semiconductor tunable laser

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US11437779B2 (en) 2015-04-30 2022-09-06 Apple Inc. Vernier effect DBR lasers incorporating integrated tuning elements
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US11804693B2 (en) 2020-03-18 2023-10-31 Northrop Grumman Systems Corporation Method and device for ultraviolet to long wave infrared multiband semiconducting single emitter

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US20190190233A1 (en) 2019-06-20
US10535979B2 (en) 2020-01-14
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AU2016230025A1 (en) 2017-09-21
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EP3251185A1 (en) 2017-12-06
WO2016144831A1 (en) 2016-09-15
US11469570B2 (en) 2022-10-11
CN107408792B (zh) 2021-01-08
JP2018511938A (ja) 2018-04-26
CN112838472A (zh) 2021-05-25

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