JP2018508122A - 光センシング応用のための安全なレーザデバイス - Google Patents
光センシング応用のための安全なレーザデバイス Download PDFInfo
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Abstract
Description
1の半導体チップ上に2から6のメサを設けるステップ;
規定入力電力がメサへ供給される場合に、メサが同時にレーザ光を発するようにメサを電気的に並列に接続するステップと;
少なくとも1のメサの劣化が、規定入力電力で駆動されるときにレーザデバイスにより発せられるレーザパワーの減少をもたらすようにレーザデバイスを適応させるステップ。
110 半導体チップ
120 メサ
125 レーザファセット
131 第1のコンタクトエリア
132 第2のコンタクトエリア
135 絶縁層
140 トレンチ
160 ボンディングエリア
210 ボトム電極
220 リング電極
230 ボトムDBR
240 トップDBR
250 閉じ込め層
260 アクティブ層
270 基板
280 保護コーティング
300 光学センサ
310 透過窓
315 放射レーザ光
317 反射レーザ光
319 制御信号
320 駆動回路
350 光検出器
360 評価器
400 モバイル通信デバイス
510 メサを設けるステップ
520 メサを電気的に接続するステップ
530 レーザデバイスを適応させるステップ
Claims (12)
- 1の半導体チップ上に設けられる2から6のメサを有するレーザデバイスであって、前記メサの各々は、規定入力電力で駆動されるときに発光波長のレーザ光を発するように構成される垂直キャビティ面発光レーザの光学共振器を埋め込み、前記メサは電気的に並列に接続され、前記レーザデバイスは、前記レーザデバイスの目の安全性が維持されるよう、少なくとも1のメサの劣化が、前記規定入力電力で駆動されるときに規定立体角において前記レーザデバイスにより発せられるレーザパワーの減少をもたらすように適応され、各メサは半導体空気界面を有し、前記レーザデバイスは、少なくとも1の半導体空気界面の劣化が、前記規定入力電力で駆動されるときに前記レーザデバイスにより発せられるレーザパワーの減少をもたらすように適応されることを特徴とし、前記半導体空気界面は、前記少なくとも1の半導体空気界面の劣化が、前記レーザデバイスの反射性を増加することにより前記規定入力電力で駆動されるときのレーザ光のアウトカップリングを低減させるよう、前記規定入力電力で駆動されるときにレーザキャビティにおける光学場の定常波パターンの波腹から離れて配置される、レーザ装置。
- 各メサが保護コーティングを有し、前記保護コーティングは、少なくとも1の保護コーティングの劣化が、前記規定入力電力で駆動されるときに前記レーザデバイスにより発せられるレーザパワーの減少をもたらすように適応される、請求項1に記載のレーザデバイス。
- 前記半導体空気界面が、前記規定入力電力で駆動されるときに定常波パターンの波節に配置される、請求項1に記載のレーザデバイス。
- 前記メサは、前記規定入力電力で駆動されるときにリング状レーザモードがサポートされるように構成される、請求項1に記載のレーザデバイス。
- 前記メサの半導体層構造は、前記規定入力電力で駆動されるときにリング状電流注入があるように構成される、請求項4に記載のレーザデバイス。
- 各メサが空間的に構造化される保護コーティングを有し、前記空間的に構造化される保護コーティングは、前記規定入力電力で駆動されるときにリング状レーザモードをサポートする、請求項4又は5に記載のレーザデバイス。
- 各メサは、トレンチを超える前記半導体チップのレベルが少なくとも前記メサのレーザ射出窓と同じ高さになるようなトレンチにより囲まれる、請求項1に記載のレーザデバイス。
- 前記レーザデバイスが前記メサを電気的に駆動するための駆動回路をさらに有し、前記駆動回路が前記メサへ前記規定入力電力を供給するように適応される、請求項1から6のいずれか一項に記載のレーザデバイスを有するレーザモジュール。
- 請求項8に記載のレーザモジュールを有する光学センサ。
- 前記レーザデバイスにより発せられる対応するレーザパルスの反射レーザ光を受光するように適応される少なくとも1の光検出器を有する、請求項9に記載の光学センサであって、前記光学センサが、前記対応するレーザパルスの反射レーザ光を識別するように適応される評価器をさらに有し、前記評価器がさらに、前記反射レーザ光の受光時間と前記対応するレーザパルスの放出時間の間の飛行時間を決定するように適応される、光学センサ。
- 請求項9又は10に記載の少なくとも1の光学センサを有するモバイル通信デバイス。
- レーザデバイスを製造する方法であって、
1の半導体チップ上に2から6のメサを設けるステップと、
前記メサを電気的に並列に接続するステップであって、前記メサの各々は、規定入力電力で駆動されるときに発光波長のレーザ光を発するように構成される垂直キャビティ面発光レーザの光学共振器を埋め込み、各メサが半導体空気界面を有する、ステップと、
前記レーザデバイスの目の安全性が維持されるよう、少なくとも1のメサの劣化が、前記規定入力電力で駆動されるときに前記レーザデバイスにより発せられるレーザパワーの減少をもたらすように、前記レーザデバイスを適応させるステップと
を有し、
少なくとも1の前記半導体空気界面の劣化が、前記レーザデバイスの反射性を増加することにより前記規定入力電力で駆動されるときのレーザ光のアウトカップリングを低減させるよう、前記規定入力電力で駆動されるときにレーザキャビティにおける光学場の定常波パターンの波腹から離して前記半導体空気界面を配置するステップを特徴とする、
方法。
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PCT/EP2016/056752 WO2016162236A1 (en) | 2015-04-10 | 2016-03-29 | Safe laser device for optical sensing applications |
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WO2016162236A1 (en) | 2016-10-13 |
US10181701B2 (en) | 2019-01-15 |
RU2017134125A3 (ja) | 2019-08-01 |
RU2017134125A (ru) | 2019-04-03 |
EP3281262A1 (en) | 2018-02-14 |
JP6461367B2 (ja) | 2019-01-30 |
RU2712939C2 (ru) | 2020-02-03 |
BR112017021395A2 (pt) | 2018-07-03 |
US20180076598A1 (en) | 2018-03-15 |
CN107466431B (zh) | 2020-07-14 |
CN107466431A (zh) | 2017-12-12 |
EP3281262B1 (en) | 2019-06-26 |
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