JP2018507933A5 - - Google Patents

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JP2018507933A5
JP2018507933A5 JP2017542066A JP2017542066A JP2018507933A5 JP 2018507933 A5 JP2018507933 A5 JP 2018507933A5 JP 2017542066 A JP2017542066 A JP 2017542066A JP 2017542066 A JP2017542066 A JP 2017542066A JP 2018507933 A5 JP2018507933 A5 JP 2018507933A5
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moiety
aryl
alkyl
alkylene
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JP6810696B2 (ja
JP2018507933A (ja
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JP2017542066A 2015-02-11 2016-02-02 ハードマスク組成物および半導体基板上での微細パターンの形成方法 Active JP6810696B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/619,603 US9499698B2 (en) 2015-02-11 2015-02-11 Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
US14/619,603 2015-02-11
PCT/EP2016/052167 WO2016128252A1 (en) 2015-02-11 2016-02-02 Metal hardmask composition and processes for forming fine patterns on semiconductor substrates

Publications (3)

Publication Number Publication Date
JP2018507933A JP2018507933A (ja) 2018-03-22
JP2018507933A5 true JP2018507933A5 (enExample) 2019-01-24
JP6810696B2 JP6810696B2 (ja) 2021-01-06

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JP2017542066A Active JP6810696B2 (ja) 2015-02-11 2016-02-02 ハードマスク組成物および半導体基板上での微細パターンの形成方法

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US (1) US9499698B2 (enExample)
EP (1) EP3257069B1 (enExample)
JP (1) JP6810696B2 (enExample)
KR (1) KR102367238B1 (enExample)
CN (1) CN107251203B (enExample)
SG (1) SG11201705487QA (enExample)
TW (1) TWI669353B (enExample)
WO (1) WO2016128252A1 (enExample)

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