JP2018502542A5 - - Google Patents

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JP2018502542A5
JP2018502542A5 JP2017524461A JP2017524461A JP2018502542A5 JP 2018502542 A5 JP2018502542 A5 JP 2018502542A5 JP 2017524461 A JP2017524461 A JP 2017524461A JP 2017524461 A JP2017524461 A JP 2017524461A JP 2018502542 A5 JP2018502542 A5 JP 2018502542A5
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JP6659685B2 (ja
JP2018502542A (ja
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JP2017524461A 2014-11-06 2015-11-06 ダブルベースバイポーラジャンクショントランジスタの最適化された動作を有する回路、方法、及びシステム、並びに、可変電圧自己同期整流器回路、方法、及びシステム、並びに、ダブルベースコンタクト双方向バイポーラジャンクショントランジスタ回路による動作ポイント最適化、方法、及びシステム。 Active JP6659685B2 (ja)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US201462076320P 2014-11-06 2014-11-06
US62/076,320 2014-11-06
US201562100301P 2015-01-06 2015-01-06
US62/100,301 2015-01-06
US201562130470P 2015-03-09 2015-03-09
US62/130,470 2015-03-09
US201562162907P 2015-05-18 2015-05-18
US62/162,907 2015-05-18
US201562182878P 2015-06-22 2015-06-22
US62/182,878 2015-06-22
US201562185543P 2015-06-26 2015-06-26
US62/185,543 2015-06-26
US201562194167P 2015-07-17 2015-07-17
US62/194,167 2015-07-17
PCT/US2015/059623 WO2016073957A1 (en) 2014-11-06 2015-11-06 Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors

Publications (3)

Publication Number Publication Date
JP2018502542A JP2018502542A (ja) 2018-01-25
JP2018502542A5 true JP2018502542A5 (https=) 2018-11-22
JP6659685B2 JP6659685B2 (ja) 2020-03-04

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JP2017524461A Active JP6659685B2 (ja) 2014-11-06 2015-11-06 ダブルベースバイポーラジャンクショントランジスタの最適化された動作を有する回路、方法、及びシステム、並びに、可変電圧自己同期整流器回路、方法、及びシステム、並びに、ダブルベースコンタクト双方向バイポーラジャンクショントランジスタ回路による動作ポイント最適化、方法、及びシステム。

Country Status (7)

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US (4) US9444449B2 (https=)
EP (1) EP3186888B1 (https=)
JP (1) JP6659685B2 (https=)
KR (1) KR102450784B1 (https=)
CN (1) CN107371382B (https=)
GB (1) GB2536586B (https=)
WO (1) WO2016073957A1 (https=)

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US11430881B2 (en) * 2020-03-05 2022-08-30 Globalfoundries U.S. Inc. Diode triggered compact silicon controlled rectifier
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US11496129B2 (en) 2020-06-08 2022-11-08 Ideal Power Inc. Method and system of current sharing among bidirectional double-base bipolar junction transistors
US11777018B2 (en) 2020-11-19 2023-10-03 Ideal Power Inc. Layout to reduce current crowding at endpoints
CN116686095A (zh) 2020-12-10 2023-09-01 理想能量有限公司 操作双向双基极双极结型晶体管(b-tran)的方法及系统
US11881525B2 (en) 2021-08-10 2024-01-23 Ideal Power Inc. Semiconductor device with bi-directional double-base trench power switches
US12507486B2 (en) 2022-09-15 2025-12-23 Globalfoundries U.S. Inc. Vertically integrated SCR structure with SOI-based raised trigger element
WO2024123521A1 (en) * 2022-12-08 2024-06-13 Ideal Power Inc. Bidirectional bipolar junction transistor devices from bonded wide and thick wafers
WO2025022733A1 (ja) * 2023-07-25 2025-01-30 パナソニックＩｐマネジメント株式会社 駆動回路および動作方法
US12506475B2 (en) 2023-08-30 2025-12-23 Ideal Power Inc. Hybrid switch circuit with bidirectional double-base bipolar junction transistors
US12388442B2 (en) 2023-12-06 2025-08-12 Ideal Power Inc. Unidirectional hybrid switch circuit
US12506476B2 (en) 2024-02-21 2025-12-23 Ideal Power Inc. Methods and systems of operating a double-sided double-base bipolar junction transistor

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